• Journal of the Korean Physical Society
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• v.73 no.9
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• pp.1279-1282
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• 2018

This paper reports the deposition of a metal line using a multilayer stack and laser-induced forward transfer (LIFT) using a low cost continuous wave blue laser with a wavelength of 450 nm. The donor structure was composed of a light-to-heat (LTH) layer, a release layer, and a transfer layer in series. Amorphous silicon as the LTH layer absorbs photon energy and converts it to heat. A release layer was melted so that a silver transfer layer would be transferred to the receiver substrate. The transferred silver layer showed reasonable physical and electrical characteristics. A low cost fine linewidth metal layer could be achieved using this modified LIFT technique and blue laser.

• 한국가시화정보학회:학술대회논문집
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• 2004.12a
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• pp.65-74
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• 2004

Measurement of concentration distributions of suspended particles in a micro-channel is out of the most crucial necessities in the area of Lab-on-a-chip to be used for various bio-chemical applications. One most feasible way to measure the concentration field in the micro-channel is using micro-LIF(Laser Induced Fluorescence) method. However, an accurate concentration field at a given cross plane in a micro-channel has not been successfully achieved so far due to various limitations in the light illumination and fluorescence signal detection. The present study demonstrates a novel method to provide an ultra thin laser sheet beam having five(5) microns thickness by use of a micro focus laser line generator. The laser sheet beam illuminates an exact plane of concentration measurement field to increase the signal to noise ratio and considerably reduce the depth uncertainty. Nile Blue A was used as fluorescent dye for the present LIF measurement. The enhancement of the fluorescent intensity signals was performed by a solvent mixture of water $(95\%)$ and ethanol (EtOH)/methanol (MeOH) $(5\%)$ mixture. To reduce the rms errors resulted from the CCD electronic noise and other sources, an expansion of grid size was attempted from $1\times1\;to\;3\times3\;or\;5\times5$ pixel data windows and the pertinent signal-to-noise level has been noticeably increased accordingly.

• 정보저장시스템학회:학술대회논문집
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• 2005.10a
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• pp.42-43
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• 2005

Higher density in the holographic storage can be obtained by using shorter wavelength laser and higher numerical aperture (NA). In this paper, we adopted a blue laser diode with a wavelength of 405nm and high NA object lens. And the phase conjugation method is applied to prevent image distortion due to high NA. The performance of the system has been shown experimentally.

• Journal of the Optical Society of Korea
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• v.10 no.2
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• pp.86-90
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• 2006

The external feedback effect on the relative intensity noise (RIN) characteristics of blue InAlGaN laser diode has been analyzed taking into account the spontaneous emission noise and the injection current for the high frequency modulation. A Langevin diffusion model was exploited to characterize its relative intensity noise. The simulation parameters were quantitatively evaluated from the optical gain properties of the InAlGaN multiple quantum well active regions by using the multiband Hamiltonian for the strained wurtzite crystals. The extracted parameters were then applied to the rate equations taking into account the external feedback and the high frequency modulation current. The RIN characteristics were investigated to optimize the low frequency laser diode noise characteristics.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.7
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• pp.764-769
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• 2004

In order to reduce operating voltage of the GaN based blue-violet laser diodes, the effect of highly Mg doped GaN layer, which was grown below ohmic contact metals, on contact resistivity as well as operating voltage has been investigated. The addition of the highly Mg doped GaN layer greatly reduced contact resistivity of Pd/Pt/Au ohmic contacts from $5.2 \times {10}^-2 \Omegaㆍ$\textrm{cm}^2$ to 7.5 \times {10}^-4 \Omegaㆍ$\textrm{cm}^2$$. In addition, it also decreased device voltage at 20 mA by more than 3 V. Temperature- dependent sheet resistivity of the highly Mg doped GaN layer suggested that the reduction of the contact resistivity could be attributed to predominant current flow at the interface between the Pd/Pt/Au contacts and p-GaN through a deep level defect band, rather than the valence band.

• Applied Chemistry for Engineering
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• v.20 no.6
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• pp.681-684
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• 2009

The turbidity of flow type samples has a nonlinear relation to brightness of laser scattered light, but the shape of images in laser scattered light is different from each turbidity samples. The turbidity measurement will be easy if it uses a pattern of images in laser scattered light. But the excessive analysis load comes from the turbidity measured by red, green, blue intensity (intensity) of all pixels of images in laser scattered light. Therefore the images in laser scattered light were divided by appropriate block to decrease excessive analysis load. The shape of divided images in laser scattered light was different from each turbidity sample. The real turbidity has a linear relation to turbidity measured by the artificial neural network learned with the intensity of divided images in laser scattered light and turbidity.

• 정보저장시스템학회:학술대회논문집
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• 2005.10a
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• pp.119-123
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• 2005

We report the random pattern characteristics of the super resolution near field structure(Super-RENS) write once read-many(WORM) disc at a blue laser optical system(laser wavelength 405nm, numerical aperture 0.85) and the Super-RENS read only memory(ROM) disc at a blue laser optical system(laser wavelength 659nm, numerical aperture 0.65). We used the WORM disc of which carrier-to-noise ratio (CNR) of 75nm is 47dB and ROM disc of which carrier-to-noise ratio (CNR) of 173nm is 45dB. We controlled the equalization (EQ) characteristics and used advanced partial-response maximum likelihood (PRML) technique. We obtained bit error rate (bER) of 10-3 level at 50GB WORM disc and bite error rate of 10-4 level at 50GB level ROM disc. This result shows high feasibility of Super-RENS technology for practical use.

• Journal of the Korean Ceramic Society
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• v.43 no.12 s.295
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• pp.852-858
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• 2006

It is well known that $BaMgAl_{10}O_{17}:Eu^{2+}$ (BAM) and $CaMgSi_2O_6:Eu^{2+}$ (CMS) are a highly efficient blue phosphor. However, these phosphors in the form of thin films have not yet been realized clue to technical difficulties. We prepared thin film type BAM and CMS phosphors on quartz glass substrate using a pulsed laser deposition technique. The luminescent and structural properties of thin film phosphors were monitored as a function of key processing parameters such as oxygen partial pressure inside the deposition chamber, deposition time, laser energy density and the type of post-deposition treatments used. Even though we could not obtain single homogenous phases, thin films with large homogenous areas and a high photoluminescence could be produced by optimizing these processing parameters.

• Transactions of the Society of Information Storage Systems
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• v.2 no.1
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• pp.38-42
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• 2006

We report the random pattern characteristics of the super resolution near field structure(Super-RENS) write once read-many(WORM) disc at a blue laser optical system(laser wavelength 405nm, numerical aperture 0.85) and the Super-RENS read only memory(ROM) disc at a blue laser optical system(laser wavelength 659nm, numerical aperture 0.65). We used the WORM disc of which carrier-to-noise ratio(CNR) of 75nm is 47dB and ROM disc of which carrier-to-noise ratio(CNR) of 173nm is 45dB. We controlled the equalization(EQ) characteristics and used advanced partial-response maximum likelihood(PRML) technique. We obtained bit error rate(bER) of 10-3 level at 50GB WORM disc and bite error rate of 10-4 level at 50GB level ROM disc. This result shows high feasibility of Super-RENS technology for practical use.

• Proceedings of the Korean Society of Potoscience Conference
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• 2005.06a
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• pp.141-141
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• 2005