• Macromolecular Research
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• v.13 no.5
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• pp.435-440
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• 2005

This study describes a method where the match of two different length scales, i.e., the patterns from self-assembled block copolymer (<50 nm) and electron beam writing (>50 nm), allow the nanometer scale pattern mask. The method is based on using block copolymers containing a poly(methyl methacrylate) (PMMA) block, which is subject to be decomposed under an electron beam, as a pattern resist for electron beam lithography. Electron beam on self assembled block copolymer thin film selectively etches PMMA microdomains, giving rise to a polymeric nano-pattern mask on which subsequent evaporation of chromium produces the arrays of Cr nanoparticles followed by lifting off the mask. Furthermore, electron beam lithography was performed on the micropatterned block copolymer film fabricated by micro-imprinting, leading to a hierarchical self assembled pattern where a broad range of length scales was effectively assembled, ranging from several tens of nanometers, through submicrons, to a few microns.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.11a
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• pp.33.2-33.2
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• 2009

Block copolymer lithography has attracted great attention for emerging nanolithography since nanoscaleperiodic patterns can be easily obtained through self-assembly process without conventional top-down patterning process. Since the morphologies of self-assembled block copolymer patterns are strongly dependent on surface energy of a substrate, suitable surface modification is required. Until now, the surface modification has been studied by using random copolymer or self-assembled mono layers (SAMs). However, the research on surface modifications has been limited within several substrates such as Si-based materials. In present study, we investigated the formation of block copolymer on Au substrate by $O_2$ plasma treatment with the SAM of 3-(p-methoxy-phenyl)propyltrichloro-silane [MPTS, $CH_3OPh(CH_2)_3SiCl_3$]. After $O_2$ plasma treatment, the chemical bonding states of the surface were analyzed by X-ray photoelectron spectroscopy (XPS). The static contact angle measurement was performed to study the effects of $O_2$ plasma treatment on the formation of MPTS monolayer. The block copolymer nanotemplates formed on Au surface were analyzed by scanning electron microscopy. The results showed that the ordering of self-assembled block copolymer pattern and the formation of cylindrical nano hole arrays were enhanced dramatically by oxygen plasma treatment. Thus, the oxidation of gold surface by $O_2$ plasma treatment enables the MPTS to form the monolayer assembly leading to surface neutralization of gold substrates.

• Proceedings of the Materials Research Society of Korea Conference
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• 2005.05a
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• pp.43-43
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• 2005

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2015.11a
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• pp.332-332
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• 2015

Block Copolymer lithography는 deep nano-scale device 제작을 위한 기존의 top-down방식의 photo-lithography를 대체할만한 기술로 많은 연구가 진행되고 있다. polystyrene(PS)/poly-methyl methacrylate (PMMA)로 구성된 BCP의 nano-scale PS mask는 일반적인 플라즈마 공정에 쉽게 damage를 입는다. 중성빔 식각을 이용하여 식각 공정 중 발생하는 BCP의 degradation을 감소시키고, 비등방성 식각 profile을 얻을 수 있으며 sidewall roughness(SWR)와 sidewall angle(SWA)가 향상되는 것을 알 수 있었다.

• Proceedings of the Materials Research Society of Korea Conference
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• 2008.11a
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• pp.30.2-30.2
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• 2008

• Journal of the Korea Academia-Industrial cooperation Society
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• v.18 no.11
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• pp.88-93
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• 2017

It is important to develop a simple method oftuning localized surface plasmon resonance(LSPR) properties, due to their numerous applications. In addition, the careful examination of the shape, size and combination of metal nanoparticles is useful for understanding the relation between the LSPR properties and metal nanostructures. This article describes the dependence of theLSPR properties on the arrays of metal nanoparticles obtained from a block copolymer(BCP) micellar thin film. Firstly, two different Au nanostructures, having a dot and ring shape, were fabricated using conventional block copolymer micelle lithography. Then, Ag was plated on the Au nanostructures through the silver mirror reaction technique to obtain Au/Ag bimetallic nanostructures. During the production of these metallic nanostructures, the processing factors, such as the pre-treatment by ethanol, silver mirror reaction time and removal or not of the BCP, were varied. Once the Au nanoparticles were synthesized, Ag was properly plated on the Au, providing two distinguishable characteristic plasmonic bands at around 525nm for Au and around 420nm for Ag, as confirmed bythe UV-vis measurements. However, when a small amount of Au seed nanoparticles, which accelerate the Ag plating speed,was formed by usinga block copolymer with a relatively highmolecular weight, all of the Au surfaces were fully covered by Ag during the silver mirror reaction, showing only the characteristic peak for Ag at around 420nm. The Ag plating technique on Au nanoparticles pre-synthesized from a block copolymer is useful to study the LSPR properties carefully.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.189-189
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• 2015

Plasmonics, sensor, field effect transistors, solar cells 등 다양한 적용분야를 가지는 실리콘 구조체는 제작공정에 의해 전기적 및 광학적 특성이 달라지기 때문에 적합한 나노구조 제작방법이 요구되고 있다. 나노구조체 제작방법으로는 Photo lithography, Extreme ultraviolet lithography (EUV), Nano imprinting lithography (NIL), Block copolymer (BCP) 방식의 방법들이 연구되고 있으며, 특히 BCP는 direct self-assembly 특성을 가지고 있으며 가격적인 면에서도 큰 장점을 가진다. 하지만 BCP를 mask로 사용하여 식각공정을 진행할 경우 BCP가 버티지 못하고 변형되어 mask로서의 역할을 하지 못한다. 이러한 문제를 해결하기 위하여 본 논문에서는 BCP와 질화막을 이용한 double mask 방법을 사용하였다. 기판 위에 BCP를 self-assembly 시키고 mask로 사용하여 hole 부분으로 노출된 기판을 Ion gun을 통해 질화 시킨 후에 BCP를 제거한다. 기판 위에 hole 모양의 질화막 표면은 BCP와 다르게 etching 공정 중 변형되지 않는다. 이러한 질화막 표면을 mask로 사용하여 pillar pattern의 실리콘 나노구조체를 제작하였다. 질화막 mask로 사용되는 template은 PS와 PMMA로 구성된 BCP를 사용하였다. 140kg/mol의 polystyrene과 65kg/mol의 PMMA를 톨루엔으로 용해시키고 실리콘 표면 위에 spin coating으로 도포하였다. Spin coat 후 230도에서 40시간 동안 열처리를 진행하여 40nm의 직경을 가진 PS-b-PMMA self-assembled hole morphology를 형성하였다. 질화막 형성 및 etching을 위한 장비로 low-energy Ion beam system을 사용하였다. Reactive Ion beam은 ICP와 3-grid system으로 구성된 Ion gun으로부터 형성된다. Ion gun에 13.56 MHz의 frequency를 갖는 200W 전력을 인가하였다. Plasma로부터 나오는 Ion은 $2{\Phi}$의 직경의 hole을 가지는 3-grid hole로 추출된다. 10~70 voltage 범위의 전위를 plasma source 바로 아래의 1st gird에 인가하고, 플럭스 조절을 위해 -150V의 전위를 2nd grid에 인가한다. 그리고 3rd grid는 접지를 시켰다. chamber내의 질화 및 식각가스 공급은 2mTorr로 유지시켰다. 그리고 기판의 온도는 냉각칠러를 이용하여 -20도로 냉각을 진행하였다. 이와 같은 공정 결과로 100 nm 이상의 높이를 갖는 40 nm직경의 균일한 Silicon pillar pattern을 형성 할 수 있었다.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.6.1-6.1
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• 2011

Nanoscale block copolymer (BCP) patterns have been pursued for applications in sub-30 nm nanolithography. BCP self-assembly processing is scalable and low cost, and is well-suited for integration with existing semiconductor fabrication techniques. However, one of the major technical challenges for BCP self-assembly is limited tunability in pattern geometry, dimension, and functionality. We suggest methods for extending the degree of tunability by choosing highly incompatible polymer blocks and utilizing solvent vapor treatment techniques. Siloxane BCPs have been developed as self-assembling resists due to many advantages such as high etch-selectivity, good etch-resistance, long-range ordering, and reduced line-edge roughness. The large incompatibility leads to extensive degree of pattern tunability since the effective volume fraction can be easily manipulated by solvent-based treatment techniques. Thus, control of the microdomain size, periodicity, and morphology is possible by changing the vapor pressure and the mixing ratio of selective solvents. This allows a range of different pattern geometry such as dots, lines and holes and critical dimension simply by changing the processing conditions of a given block copolymer without changing a polymer chain length. We demonstrate highly extensive tunability (critical dimension ~6~30 nm) of self-assembled patterns prepared by a siloxane BCP with extreme incompatibility.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.59-59
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• 2010

상변화 메모리 소자의 고집적화를 위한 새로운 패터닝 공정을 위하여 블락 공중합체의 자가 조립 특성을 적용한 고분자 패턴을 TiN기판 위에 적용화기 위한 연구를 진행하였다. 블락 공중합체의 자기 조립에 의한 패턴의 모양은 각 기판과 블락 공중합체간의 상호작용에 따라 sphere, cylinder, lamellar 형태의 모양을 띄게 된다. 표면처리가 안된 TiN기판 위의 PS-b-PMMA 블락 공중합체의 패턴의 형태는 cylinder와 lamellar 구조가 섞여 있는 구조로써 PS-r-PMMA 랜덤 공중합체로 기판 표면을 처리해 줄 경우 좀 더 균일한 cylinder 패턴 구조를 얻을 수 있었다. PS-r-PMMA로 기판 표면 처리 전 후의 상호 작용의 변화를 알아보기 위하여 물방울 접촉각 테스트를 하였으며 랜덤 공중합체와 블락 공중합체의 표면 처리 열처리 조건에 따른 패턴 행태의 변화를 관찰하기 위하여 모두 24,48,72시간으로 변화시켜 열처리 하였다. 최종 열처리 후 블락 공중합체의 패턴 형태의 주사 전자 현미경 관찰을 위하여 acetic acid에 60분 동안 침지시켜 PMMA를 제거 후 괄찰하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.108-109
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• 2012

This talk will begin with the demonstration of facile synthesis of silicon nanostructures using the magnesiothermic reduction on silica nanostructures prepared via self-assembly, which will be followed by the characterization results of their performance for energy storage. This talk will also report the fabrication and characterization of highly porous, stretchable, and conductive polymer nanocomposites embedded with carbon nanotubes (CNTs) for application in flexible lithium-ion batteries. It will be presented that the porous CNT-embedded PDMS nanocomposites are capable of good electrochemical performance with mechanical flexibility, suggesting these nanocomposites could be outstanding anode candidates for use in flexible lithium-ion batteries. Directed self-assembly (DSA) of block copolymers (BCPs) can generate uniform and periodic patterns within guiding templates, and has been one of the promising nanofabrication methodologies for resolving the resolution limit of optical lithography. BCP self-assembly processing is scalable and of low cost, and is well-suited for integration with existing semiconductor manufacturing techniques. This talk will introduce recent research results (of my research group) on the self-assembly of Si-containing block copolymers for the achievement of sub-10 nm resolution, fast pattern generation, transfer-printing capability onto nonplanar substrates, and device applications for nonvolatile memories. An extraordinarily facile nanofabrication approach that enables sub-10 nm resolutions through the synergic combination of nanotransfer printing (nTP) and DSA of block copolymers is also introduced. This simple printing method can be applied on oxides, metals, polymers, and non-planar substrates without pretreatments. This talk will also report the direct formation of ordered memristor nanostructures on metal and graphene electrodes by the self-assembly of Si-containing BCPs. This approach offers a practical pathway to fabricate high-density resistive memory devices without using high-cost lithography and pattern-transfer processes. Finally, this talk will present a novel approach that can relieve the power consumption issue of phase-change memories by incorporating a thin $SiO_x$ layer formed by BCP self-assembly, which locally blocks the contact between a heater electrode and a phase-change material and reduces the phase-change volume. The writing current decreases by 5 times (corresponding to a power reduction of 1/20) as the occupying area fraction of $SiO_x$ nanostructures varies.