• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.63-66
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• 2000

In this paper, we present the simulation of the heterojunction bipolar transistor with different Emitter-Base junction structures. Our simulation results include effect of setback and graded layer. We prove the emitter efficiency's improvement through setback and graded layer. In 1995, the analytical equations of electric field, electrostatic potential, and junction capacitance for abrupt and linearly graded heterojunctions with or without a setback layer was derived. But setback layer and linearly graded layer's recombination current was considered numerically. Later, recombination current model included setback layer and graded layer will be proposed. New recombination current model also wile include abrupt heterojunction's recombination current model. In this paper, the material parameters of the heterojunction bipolar transistor with different Emitter-Base junction structures is introduced.

• Transactions of Materials Processing
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• v.21 no.8
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• pp.499-505
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• 2012

The fuel cell is a very promising power generation system combining the benefits of extremely low emissions, high efficiency, ease of maintenance and durability. In order to promote the commercialization of fuel cells, a flexible forming process, in which a hyper-elastic rubber is adopted as a medium to transmit forming pressure, is suggested as an efficient and cost effective manufacturing method for fuel cell bipolar plates. In this study, the ability of this flexible forming process to produce the micro channel arrays on metallic bipolar plates was first demonstrated experimentally. Then, a finite element (FE) model was built and validated through comparisons between simulated and experimental results. The effects of key process parameters on the forming performance such as applied load and punch velocity were investigated. As a result, appropriate process parameter values allowing high dimensional accuracy without failure were suggested.

• Journal of the Korea Society for Simulation
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• v.4 no.2
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• pp.41-60
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• 1995

The IGBT(Insulated Gate Bipolar Transistor) is a power semiconductor device that has gained acceptance among circuit design engineers for motor drive and power converter applications. IGBT devices(International Rectifier, Proposed proposed model etc) have the best features of both power MOSFETs and power bipolar transistors, i.e., efficient voltage gate drive requirememts and high current density capability. When designing circuit and systems that utilize IGBTs or other power semiconductor devices, circuit simulations are needed to examine how the devices affect the behavior of the circuit. The interaction of the IGBT with the load circuit can be described using the device model and the state equation of the load circuit. The voltage rise rate at turn-off for inductive loads varies significantly for IGBTs with different base life times, and this rate of rise is important in determing the voltage overshoot for a given series resistor-inductor load circuit. Excessive voltage overshoot is potentially destructive, so a snubber protection circuit may be required. The protection circuit requirements are unique for the IGBT and can be examined using the model. The IGBT model in this paper is verified by comparing the results of the model with experimented results for various circuit operating conditions. The model performs well and describes experimented results accurately for the range of static and dynamic condition in which the device is intended to be operated.

• Particle and aerosol research
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• v.10 no.1
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• pp.27-31
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• 2014

A simple bimodal model has been developed to analyze charged particle coagulation by modifying previously suggested bimdal model for evolution of particle generation and growth. In the present model, two monodisperse modes are used and 40 charge nodes are assigned to each mode to account both change of the particle size and charge distribution. In addition, we also implemented the effect of electrostatic dispersion loss in the present model. Based on the developed model, we analyzed coagulation of asymmetric bipolar charged particles by computing evolutions of particle number concentration, geometric mean diameter of particles, charge asymmetric ratio and geometric standard deviation of particle size distribution for various initial charge asymmetric ratios. The number concentration of asymmetric bipolar charged particles decreases faster than that of neutral particles but that does not give faster growth of particles since the electrostatic dispersion loss overwhelms particle growth by coagulation.

• Journal of the Institute of Convergence Signal Processing
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• v.14 no.4
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• pp.222-230
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• 2013

Retinal bipolar cells according to the light stimulus respond to potential slowly, emit neurotransmitter release(glutamine acid) to depend on membrane potential. In this paper, the several physiological information on neurotransmitter release mechanism in the presynaptic terminal of the ON-type bipolar cells are incorporated into the formula model. The source of fast components and slow components of neurotransmitter release was arranged in parallel, this model was able to reproduce the membrane potential and intracellular $Ca^{2+}$ concentration dependence of neurotransmitter release faithfully. In addition, because the fast releasable components of neurotransmitter was represented by the membrane potential dependence of trapezoid type, whereas the slow releasable components was represented by the membrane potential dependence of a bell type, $Ca^{2+}$ concentration rise in intracellular is suppressed by $Ca^{2+}$ buffer to reduce slow releasable components, it was confirmed that the membrane potential dependence of neurotransmitter release was characteristics of a trapezoid type. And, in the light response of ON type bipolar cell, the result of the simulation of the neurotransmitter release caused by the components of transient and persistent was that the start of light response occurred the fast release of neurotransmitter, it was confirmed that the transient component and persistent component of the light response occurred the slow release. It was confirmed that the later of persistent component of the light response occurred due to the continuous release by synaptic vesicle supplemented from the storage pool.

• ETRI Journal
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• v.15 no.3
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• pp.61-69
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• 1994

A new analytical model for the base current of Si/SiGe/Si heterojunction bipolar transistors(HBTs) has been developed. This model includes the hole injection current from the base to the emitter, and the recombination components in the space charge region(SCR) and the neutral base. Distinctly different from other models, this model includes the following effects on each base current component by using the boundary condition of the excess minority carrier concentration at SCR boundaries: the first is the effect of the parasitic potential barrier which is formed at the Si/SiGe collector-base heterojunction due to the dopant outdiffusion from the SiGe base to the adjacent Si collector, and the second is the Ge composition grading effect. The effectiveness of this model is confirmed by comparing the calculated result with the measured plot of the base current vs. the collector-base bias voltage for the ungraded HBT. The decreasing base current with the increasing the collector-base reverse bias voltage is successfully explained by this model without assuming the short-lifetime region close to the SiGe/Si collector-base junction, where a complete absence of dislocations is confirmed by transmission electron microscopy (TEM)[1].The recombination component in the neutral base region is shown to dominate other components even for HBTs with a thin base, due to the increased carrier storage in the vicinity of the parasitic potential barrier at collector-base heterojunction.

• Proceedings of the KIEE Conference
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• 2008.10b
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• pp.165-168
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• 2008

The experimental results of exposing IGBT (Insulated Gate Bipolar Transistor) samples to gamma radiation source show shifting of threshold voltages in the MOSFET and degradation of carrier mobility and current gains. At low total dose rate, the shift of threshold voltage is the major contribution of current increases, but for more than some total dose, the current is increased because of the current gain degradation occurred in the vertical PNP at the output of the IGBTs. In the paper, the collector current characteristics as a function of gate emitter voltage (VGE) curves are tested and analyzed with the model considering the radiation damage on the devices for gate bias and different dose. In addition, the model parameters between simulations and experiments are found and studied.

• Proceedings of the IEEK Conference
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• 2000.11b
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• pp.47-50
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• 2000

DC Gummel-Poon SPICE model parameter extraction program has been implemented. This program extracts the parameters from measured data using Levenberg-Marquardt algorithm. Measured data consist of forward and reverse Gummel plot, forward and reverse output characteristics and RE and RC measurements.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.12
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• pp.2001-2009
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• 1989

This study suggests the use of fuzzy model in the semiconductor devices modeling as a black box approach. When membership functions of fuzzy sets used in a fuzzy model are simple piecewise-linear functions, the fuzzy model can be reresented in a simple equation. To show that the fuzzy model can be very realistic and simple when used in semiconductor devices modeling, we construct fuzzy models for bipolar transistor, MOSFET and GaAs FET, and compare those with canonical piecewise-linear models.

• The Korean Journal of Physiology and Pharmacology
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• v.20 no.5
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• pp.507-514
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• 2016

Although 3D-complex fractionated atrial electrogram (CFAE) mapping is useful in radiofrequency catheter ablation for persistent atrial fibrillation (AF), the directions and configuration of the bipolar electrodes may affect the electrogram. This study aimed to compare the spatial reproducibility of CFAE by changing the catheter orientations and electrode distance in an in -silico left atrium (LA). We conducted this study by importing the heart CT image of a patient with AF into a 3D-homogeneous human LA model. Electrogram morphology, CFAE-cycle lengths (CLs) were compared for 16 different orientations of a virtual bipolar conventional catheter (conv-cath: size 3.5 mm, inter-electrode distance 4.75 mm). Additionally, the spatial correlations of CFAE-CLs and the percentage of consistent sites with CFAE-CL<120 ms were analyzed. The results from the conv-cath were compared with that obtained using a mini catheter (mini-cath: size 1 mm, inter-electrode distance 2.5 mm). Depending on the catheter orientation, the electrogram morphology and CFAE-CLs varied (conv-cath: $11.5{\pm}0.7%$ variation, mini-cath: $7.1{\pm}1.2%$ variation), however the mini-cath produced less variation of CFAE-CL than conv-cath (p<0.001). There were moderate spatial correlations among CFAE-CL measured at 16 orientations (conv-cath: $r=0.3055{\pm}0.2194$ vs. mini-cath: $0.6074{\pm}0.0733$, p<0.001). Additionally, the ratio of consistent CFAE sites was higher for mini catheter than conventional one ($38.3{\pm}4.6%$ vs. $22.3{\pm}1.4%$, p<0.05). Electrograms and CFAE distribution are affected by catheter orientation and electrode configuration in the in-silico LA model. However, there was moderate spatial consistency of CFAE areas, and narrowly spaced bipolar catheters were less influenced by catheter direction than conventional catheters.