• Economic and Environmental Geology
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• v.38 no.2 s.171
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• pp.155-163
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• 2005

For an unbiased TF (Tansfer Function) estimations we investigate geomagnetic TF derived from ICHEON and YONGIN sites, employing RR (Remote Reference) and SNS (Signal Noise Separation) techniques. The Rh technique, which requires synchronized field variations recorded at a clean remote site, is a reliable method to minimize the bias of TF by uncorrelated noises in magnetic channels. Meanwhile, SNS technique based on the assumption of noise-free remote data can improve the signal-noise level by separating signal TF and noise TF, which is successfully applied to the environments with strong correlated noises. In this study, TF at YONGIN is analyzed using geomagnetic data from ICHEON site as a remote reference, which seem to have somewhat better data quality. The application of Rh technique reduces the bias of TF, which appears in single site robust estimation, and makes curves in the amplitude and phase of TF more smooth as frequency. Futhermore, in order to investigate noise source quantitatively, SNS technique is applied. The results of SNS suggest that dominant noise source seems to be located at western region of YONGIN. This noise source is considered to originate from railway system such as KTX and national subway. which passes through the west regions of YONGIN.

• Journal of the Korean Magnetics Society
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• v.26 no.4
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• pp.137-141
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• 2016

There is a growing demand for non-contact current measurements for efficient use of electrical power and energy saving. In this study, I propose a non-contact current sensor using LC resonance by a resonance circuit composed of a sensor coil and 2 coupling coils for enabling a wireless measurement. The inductance of the sensor coil, which could be changed by applied current, causes the change of resonance frequency of the resonance circuit. A pair of magnet was attached to the ferrite core to apply a bias magnetic field that enabled the determination of the current direction. We obtained an output voltage change of 18 V with the current of -3~3 A. But, the output was nonlinear. In order to realize the non-contact current measuring method proposed in the present study, there is a need for a strict investigation of linearity and resolution for the future study.

• Proceedings of the Korean Magnestics Society Conference
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• 2011.12a
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• pp.7-8
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• 2011

Although yttrium iron garnet (YIG) has provided a great vehicle for the study of spin waves in the past, associated difficulties in film deposition and device fabrication using YIG had limited the applicability of spin waves to practical devices. However, microfabrication techniques have made it possible to characterize both the resonant as well as the travelling characteristics of spin waves in permalloy (Py). A variety of methods have been used for measuring spin waves, including Brillouin light scattering (BLS), magneto-optic Kerr effect (MOKE), vector network analyzer ferromagnetic resonance (VNA-FMR), and pulse inductive microwave magnetometry (PIMM). PIMM is one of the most preferred methodologies of measuring travelling spin waves. In this method, an electrical impulse is applied at one of two coplanar waveguides patterned on top of oxide-insulated Py, producing a local disturbance in the magnetization of the Py. The resulting disturbance travels down the Py in the form of waves, and is inductively picked up by the other coplanar waveguide. We investigate the effect of the pulse width of excitation pulses on the generated spin wave packets using both experimental results and micromagnetic simulations. We show that spin wave packets generated from electrical pulses are a superposition of two separate spin wave packets, one generated from the rising edge and the other from the falling edge, which interfere either constructively or destructively with one another, depending upon the magnitude and direction of the field bias conditions. A method of spin wave amplitude modulation is also presented by the linear superposition of spin waves. We use interfering spin waves resulting from two closely spaced voltage impulses for the modulation of the magnitude of the resultant spin wave packets.

• Journal of Advanced Navigation Technology
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• v.21 no.2
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• pp.171-178
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• 2017

In this paper, in order to verify the performance of a localization algorithm using GPS as an auxiliary sensor, the algorithm was applied to a hovering-type autonomous underwater vehicle (AUV) to perform a field test. The applied algorithm is an algorithm to improve the accumulated positional error of dead reckoning using doppler velocity logger(DVL) and tilt-compensated compass module (TCM) mounted on the AUV. GPS when surfaced helps the algorithm to estimate the position and the heading bias error of TCM for geodetic north, which makes it possible to perform dead reckoning on north-east-down (NED) coordinates. As a result of field test performing heading control, it was judged that the algorithm could improve the positional error, enhance the operational capability of AUV and contribute to the research of underwater navigation depending on a magnetic compass.

• Journal of the Korean Magnetics Society
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• v.27 no.4
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• pp.115-122
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• 2017

The antiferromagnet IrMn based four different GMR-SV multilayers on Corning glass were prepared by using ion beam deposition and DC magnetron sputtering system. The magnetoresistance (MR) properties for single-type and dual-type GMR-SV multilayer films were investigated through the measured major and minor MR curves. The exchange bias coupling field ($H_{ex}$) and coercivity ($H_c$) of pinned layer, the $H_c$ and interlayer exchange coupling field ($H_{int}$) of free layer for the dual-type structure GMR-SV multilayer films consisted of top IrMn layer were 410 Oe, 60 Oe, 1.6 Oe, and 7.0 Oe, respectively. The minor MR curve of two free layers was performed the squarelike feature having a MR ratio of 8.7 % as the sum of 3.7 % and 5.0 %. The value of average magnetic field sensitivity (MS) was maintained at 2.0 %/Oe. Also, the magnetoresistance properties of the single-type and dual-type structure GMR-SV multilayer films consisted of bottom IrMn layer were decreased more than those of top IrMn layer. Two antiparallel states of magnetization spin arrays of the pinned and free layers in the dual-type GMR-SV multilayer films occurred the maximum MR value by the effect of spin dependence scattering.

• Journal of the Korean Magnetics Society
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• v.15 no.5
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• pp.270-275
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• 2005

Dust cores (compressed powder cores) of $Fe-6.0wt\%Si$ alloy with a size of $35\~180\;{\mu}m$ in diameter have been prepared by phosphate coatings and annealings at $600\~900^{\circ}C$ for 1 h in nitrogen atmosphere. Further the magnetic and mechanical properties of the powder cores were investigated. As a general trends, the compressive strength and core loss decreased with the increase in annealing temperature. When annealed at $800^{\circ}C$, the compressive strength was 15 kgf, the permeability and quality factor were 74 and 26, respectively. Moreover the core loss at 50 kHz and 0.1 T induction was $750\;mW/cm^3$, and the percent permeability under the static field of 50 Oe was estimated to be about 78. In addition, the cut-off frequency in the cure representing the frequency dependence of effective permeability was measured to be around 200 kHz. These properties of the $Fe-6.0wt\%Si$ alloy dust cores could be considered to be due to the good insulation effect of iron-phosphate coats, the decrease in magnetocrystalline anisotropy and saturation magnetostriction and the increase in electric resistivity.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.100-101
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• 2012

The plasma damage free and room temperature processedthin film deposition technology is essential for realization of various next generation organic microelectronic devices such as flexible AMOLED display, flexible OLED lighting, and organic photovoltaic cells because characteristics of fragile organic materials in the plasma process and low glass transition temperatures (Tg) of polymer substrate. In case of directly deposition of metal oxide thin films (including transparent conductive oxide (TCO) and amorphous oxide semiconductor (AOS)) on the organic layers, plasma damages against to the organic materials is fatal. This damage is believed to be originated mainly from high energy energetic particles during the sputtering process such as negative oxygen ions, reflected neutrals by reflection of plasma background gas at the target surface, sputtered atoms, bulk plasma ions, and secondary electrons. To solve this problem, we developed the NBAS (Neutral Beam Assisted Sputtering) process as a plasma damage free and room temperature processed sputtering technology. As a result, electro-optical properties of NBAS processed ITO thin film showed resistivity of $4.0{\times}10^{-4}{\Omega}{\cdot}m$ and high transmittance (>90% at 550 nm) with nano- crystalline structure at room temperature process. Furthermore, in the experiment result of directly deposition of TCO top anode on the inverted structure OLED cell, it is verified that NBAS TCO deposition process does not damages to the underlying organic layers. In case of deposition of transparent conductive oxide (TCO) thin film on the plastic polymer substrate, the room temperature processed sputtering coating of high quality TCO thin film is required. During the sputtering process with higher density plasma, the energetic particles contribute self supplying of activation & crystallization energy without any additional heating and post-annealing and forminga high quality TCO thin film. However, negative oxygen ions which generated from sputteringtarget surface by electron attachment are accelerated to high energy by induced cathode self-bias. Thus the high energy negative oxygen ions can lead to critical physical bombardment damages to forming oxide thin film and this effect does not recover in room temperature process without post thermal annealing. To salve the inherent limitation of plasma sputtering, we have been developed the Magnetic Field Shielded Sputtering (MFSS) process as the high quality oxide thin film deposition process at room temperature. The MFSS process is effectively eliminate or suppress the negative oxygen ions bombardment damage by the plasma limiter which composed permanent magnet array. As a result, electro-optical properties of MFSS processed ITO thin film (resistivity $3.9{\times}10^{-4}{\Omega}{\cdot}cm$, transmittance 95% at 550 nm) have approachedthose of a high temperature DC magnetron sputtering (DMS) ITO thin film were. Also, AOS (a-IGZO) TFTs fabricated by MFSS process without higher temperature post annealing showed very comparable electrical performance with those by DMS process with $400^{\circ}C$ post annealing. They are important to note that the bombardment of a negative oxygen ion which is accelerated by dc self-bias during rf sputtering could degrade the electrical performance of ITO electrodes and a-IGZO TFTs. Finally, we found that reduction of damage from the high energy negative oxygen ions bombardment drives improvement of crystalline structure in the ITO thin film and suppression of the sub-gab states in a-IGZO semiconductor thin film. For realization of organic flexible electronic devices based on plastic substrates, gas barrier coatings are required to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency flexible AMOLEDs needs an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}gm^{-2}day^{-1}$. The key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required (under ${\sim}10^{-6}gm^{-2}day^{-1}$) is the suppression of nano-sized defect sites and gas diffusion pathways among the grain boundaries. For formation of high quality single inorganic gas barrier layer, we developed high density nano-structured Al2O3 single gas barrier layer usinga NBAS process. The NBAS process can continuously change crystalline structures from an amorphous phase to a nano- crystalline phase with various grain sizes in a single inorganic thin film. As a result, the water vapor transmission rates (WVTR) of the NBAS processed $Al_2O_3$ gas barrier film have improved order of magnitude compared with that of conventional $Al_2O_3$ layers made by the RF magnetron sputteringprocess under the same sputtering conditions; the WVTR of the NBAS processed $Al_2O_3$ gas barrier film was about $5{\times}10^{-6}g/m^2/day$ by just single layer.