• 한국전기전자재료학회논문지
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• 제29권4호
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• pp.247-249
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• 2016

In this study, we investigated the color change of the normal light gray granite as the high value color granite. By coating the metal catalyst liquid on the surface of granite stone, the metal particles were penetrated into the granite and the color of granite was changed permanently through the annealing treatment. To increase penetration depth into the granite, we used DC (direct current) bias. Two kinds of bias were used such as DC bias and pulse DC bias. And the penetration time was changed as 30 and 60 min. In all cases, the color granite were successfully obtained. Regardless of the catalyst reaction time, the penetration depth was increased by using the bias treatment. We obtained a penetration depth of 21 mm with the DC pulse bias during 60 min.

• 한국전기전자재료학회논문지
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• 제17권3호
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• pp.278-282
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• 2004

The Hydrogenated amorphous carbon(a-C:H) thin films are deposited on silicon with a close field unbalanced magnetron(CFUBM) sputtering systems. The experimental data are obtained on the depositon rate and physical properties of a-C:H films using DC bias voltage and Ar/C$_2$H$_2$ pressure. The depostion rate and the surface roughness decrease with DC bias voltage, but the hardness of the thin films increases with DC bias voltage. And the position of G-peak moves to lower wavenumber indicating an increase in diamond-like carbon characteristics with the lower Ar/C$_2$H$_2$ pressure.

• Journal of Magnetics
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• 제15권3호
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• pp.132-137
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• 2010

Plasma etching of $SiO_2$ contact holes was statistically analyzed by a fractional factorial experimental design. The analysis revealed the dependence of the etch rate and DC self-bias voltage on the input factors of the magnetically enhanced reactive ion etching reactor, including gas pressure, magnetic field, and the gas flow rates of $CHF_3$, $CF_4$, and Ar. Empirical models of the DC self-bias voltage and etch rate were obtained. The DC self-bias voltage was found to be determined mainly by the operating pressure and the magnetic field, and the etch rate was related mainly to the pressure and the flow rates of Ar and $CHF_3$.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2005년도 동계학술연구발표회 및 2차 아시안포럼
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• pp.80-81
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• 2005

The resilience of the exchange bias ($H_{EX}$) in ferromagnet / antiferromagnet bilayers is generally studied in terms of repeated hysteresis loop cycling or by protracted annealing under reversed field (training and long-term relaxation respectively). The stability of $H_{EX}$ is fundamental for practical application of exchange bias systems. In this paper we report measurements of training and relaxation in FeNi films coupled with the antiferromagnet FeMn. We show that $H_{EX}$ suppressed both by training and relaxation was partially recovered as soon as a field cycling for consecutive hysteresis loop measurement was stopped or the magnetization of the ferromagnet was switched back to the biased direction.

• 한국광학회:학술대회논문집
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• 한국광학회 1989년도 제4회 파동 및 레이저 학술발표회 4th Conference on Waves and lasers 논문집 - 한국광학회
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• pp.235-241
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• 1989

Static according tests were carried out on a series of amorphous TbFe thin films of various composition under a constant laser irradiation condition. Examination of recorded domain configurations by using polarizing microscope led to the categorization of domain characteristics into 3 distinctly different types; i.c., type A: circular domains with smooth boundaries, the size not sensitive to variation of bias field, type B: domains of irregular shape at low bias, the size increasing and the boundaries getting smoother and more circular with increasing bias field and type C: not recordable. Critical factor which distinguishes among each types was fond to be the relative magnitude of H and H of the film near T, regardless of constituent atomic species. Micromagnetical process of thermomagnetic recording cycle was analyzed scheniatically for each type.

• Journal of information and communication convergence engineering
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• 제8권1호
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• pp.107-111
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• 2010

This paper has presented the dependence of the threshold voltage on back gate bias and drain voltage for FinFET. The FinFET has three gates such as the front gate, side and back gate. Threshold voltage is defined as the front gate bias when drain current is 1 micro ampere as the onset of the turn-on condition. In this paper threshold voltage is investigated into the analytical potential model derived from three dimensional Poisson's equation with the variation of the back gate bias and drain voltage. The threshold voltage of a transistor is one of the key parameters in the design of CMOS circuits. The threshold voltage, which described the degree of short channel effects, has been extensively investigated. As known from the down scaling rules, the threshold voltage has been presented in the case that drain voltage is the 1.0V above, which is set as the maximum supply voltage, and the drain induced barrier lowing(DIBL), drain bias dependent threshold voltage, is obtained using this model.

• 한국표면공학회지
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• 제41권6호
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• pp.287-291
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• 2008

Reactively magnetron sputtered TiN films were deposited on Si wafers under varying bias voltage and characterized by X-ray diffraction, field-emission scanning electron microscopy and Nanoindentation. The films deposited under an Ar + $N_2$ atmosphere exhibited a mixed (200)-(111) orientation with a strong (200) texture, which subsequently changed to a strong (111) texture with increasing bias voltage. The changes in texture and grain size of the TiN thin films are due to one or a combination of factors such as strain energy, surface free energy, surface diffusivity and adatom mobility. The influence of each factor depends on the processing conditions. The average deposition rate and grain size were calculated from FE-SEM images of the films indicating that the deposition rate was lower at the films deposited under bias voltage.

• 한국정보통신학회:학술대회논문집
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• 한국정보통신학회 2015년도 추계학술대회
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• pp.1109-1112
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• 2015

소자장치가 없는 함정의 경우 탈자 시에 지구자계와 반대방향으로 수직자화를 부여하여 수중에서 수직방향의 자계가 발생하지 않도록 한다. 탈자 시에 수직자화를 부여하는 탈자방법으로는 Flash D가 있어나 수직자화의 예측이 어렵다. 본 논문에서는 Flash D와는 달리 바이어스 자계를 인가하여 수직방향으로 자화를 형성하는 것에 대해 검토하였다. 이용된 시편은 두께 0.15mm의 아연도금 강판을 이용하여 함정의 선수에서 선미까지의 형상을 고려하여 원형, 삼각, 사각형의 형태를 가진다. FEM해석을 통해 시편형상에 따른 자계신호의 차이를 구하였고 인가자계에 의한 잔류자화특성곡선을 실험을 통해 구하였다. 바이어스자계를 수평 및 수직으로 각각 인가하여 잔류자화에 의한 자계신호를 측정하였다. 시편에 인가하는 자계는 파형발생기를 이용하여 솔레노이드 코일에 전류를 흘려 발생시켰으며 수직바이어스자계는 솔레노이드 코일 아래에 사각 코일을 설치하여 발생시켰다. 신호측정은 자계센서를 이용하였다. 이 실험을 통해 수직 및 수평 바이어스 자계는 시편에 수직 및 수평자화를 각각 형성시켰으며 수직자화는 수직바이어스 자계와 선형적인 관계를 가져 함정에 형성되는 수직자화를 예측할 수 있음을 알았다.

• 한국진공학회지
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• 제8권4A호
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• pp.417-424
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• 1999

In order to investigate field emission mechanism of undoped polycrystalline diamond films, diamond films with different structural properties were deposited by varying positive substrate bias and/or $CH_4$ concentration. When increasing $CH_4$ concentration and positive substrate bias voltage, nondiamond carbon content in diamond films increased. Increase of nondiamond carbon content with increasing substrate voltage is ascribed to increase of substrate and excess generation of $CH_n$ radicals. Field emission properties of undoped polycrystalline diamond films ere significantly enhanced with increasing nondiamond carbon content. For diamond films with a small amount of nondiamond carbon, electrons are emitted through diamond surface while for the films with a large amount of nondiamond carbon, electron emission occurs through diamond bulk as well as surface. From this study, depending on nondiamond carbon content two field emission mechanisms were suggested.

• Journal of Magnetics
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• 제16권2호
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• pp.97-100
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• 2011

Bilayers of soft NiFe (150 nm-420 nm) on hard Ni (150 nm) were prepared by electrodeposition. The process of magnetization reversal in the NiFe/Ni bilayers was then investigated. The hysteresis loop generated by a magnetization reversal of soft NiFe under a positive saturation state of a hard Ni layer shows a shift along the negative field axis, which is clear evidence for the exchange spring effect in the NiFe/Ni bilayers. The dependence of the coercive field $H_c$ and exchange bias field Hex on the thickness of the NiFe layer was also investigated. As the NiFe thickness increases from 150 nm to 420 nm, both $H_c$ and $H_{ex}$ decrease rapidly from $H_c$= 51.7 Oe and $H_{ex}$ = 12.2 Oe, and saturate to $H_c$ = 5.8 Oe and $H_{ex}$ = 3.5 Oe.