• Bulletin of the Korean Chemical Society
• /
• v.35 no.12
• /
• pp.3482-3488
• /
• 2014

Matrix-induced mass bias and its effect on the accuracy of isotope ratio measurements have been examined for a quadrupole-based inductively coupled plasma-mass spectrometer (Q ICP-MS). Matrix-induced mass bias effect was directly proportional to % mass difference, and its magnitude varied for element and nebulizer flow rate. For a given element and conditions in a day, the effect was consistent. The isotope ratio of Cd106/Cd114 under $200{\mu}g\;g^{-1}$ U matrix deviated from the natural value significantly by 3.5%. When Cd 111 and Cd114 were used for the quantification of Cd with isotope dilution (ID) method, the average of differences between the calculated and measured concentrations was -0.034% for samples without matrix ($0.076{\mu}g\;g^{-1}$ to $0.21{\mu}g\;g^{-1}$ for the period of 6 months). However, the error was as large as 1.5% for samples with $200{\mu}g\;g^{-1}$ U. The error in ID caused by matrix could be larger when larger mass difference isotopes are used.

• The Journal of Information Systems
• /
• v.27 no.2
• /
• pp.221-245
• /
• 2018

Purpose This study aims to investigate the factors that influence switching intention of Smart Appliances. We focuses on Push-Pull-Mooring theory and status quo bias as factors related to switching behavior. Design/methodology/approach This study developed an model to explain the switching intention of Smart Appliances and conducted structural equation modeling with AMOS22.0. To test the proposed hypotheses, we collected 319 survey responses from smart appliances's users. Findings The results indicated that low usefulness and low ease of use had an effect on the switching intention of smart appliances. The results also indicated that attractiveness of the alternative and social norms had an effect on the switching intention of smart appliances. Lastly, The difference between the relation of push effect and switching intention and the relation of pull effect and switching intention was found to be due to the level of status quo bias. The academic and managerial implications were discussed based on the results of empirical analysis.

• Journal of the Korean Society of Clothing and Textiles
• /
• v.28 no.6
• /
• pp.776-783
• /
• 2004

The purpose of this study was to identify the reasonable gathering conditions as consider of effect of gathering and variation of silhouette made by gathering conditions. The experimental design consists of four factorial design: (1) three kinds of different weight and different thickness fabrics (2) three kinds of different stitch densities (3) five kinds of different ratio of gathers (4) three kinds of different angles. Therefore one hundred thirty five (135) samples were made. Data analysis utilize SPSS WIN 10.0 Package. The results of this study were as follows: 1. In the aspect of fabrics, it is shown the visual propriety that it is as thin as the small stitch, and as thick as the big stitch. 2. As stitch densities, it shows the different stabilized nodes. 3. In the aspect of ratio of gathers, it is shown the visual propriety that a few was small stitches, which help formations of nodes, and a lot were big stitches, which help increased the effect of gather. 4. In the aspect of angle of bias, the drape appearance was excellent as a sample of cutting by 0 angle(0$^{\circ}$) of bias. The big stitches that help formations of stabilized nodes, and a case of cutting by 45 angle(45$^{\circ}$) of bias was small stitch.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1998.11a
• /
• pp.141-144
• /
• 1998

The electrical characteristics of poly-Si TFT's with offset structure by negative bias stress are systematically investigated as a function of offset length. The changes of electrical characteristics, V$\_$th/, off-current, on/off ratio, in the offset structured poly-Si TFT's are smaller than that of the conventional structured poly-Si TFT's under the stress condition (V$\_$ds/=20V, V$\_$gs/=-20V). It is found that the hot carrier effect by negative bias stress is suppressed by the offset structured poly-Si TFT's because the local electric field near the drain region is decreased by offset region.

• Korean Journal of Materials Research
• /
• v.13 no.7
• /
• pp.415-419
• /
• 2003

Carbon nanotubes were formed on silicon substrate using microwave plasma-enhanced chemical vapor deposition method. The possibility of carbon nanotubes formation was related to the thickness of nickel catalyst. The growth behavior of carbon nanotubes under the identical thickness of nickel catalyst was strongly dependent on the magnitude of the applied bias voltage. High negative bias voltage (-400 V) gave the vertically well-aligned carbon nanotubes. The vertically well-aligned carbon nanotubes have the multi-walled structure with nickel catalyst at the end position of the nanotubes.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.11a
• /
• pp.302-303
• /
• 2008

Nominally undoped (intrinsic) ZnO thin films were deposited by magnetron sputtering system with utilization of substrate bias on silicon at $450^{\circ}C$. Oxygen gas was selected as sputtering gas. The deposited thins were evaluated with X-ray diffraction (XRD) for their microstructure analysis and Hall effect in Van der Pauw configuration for their electrical property. The XRD shows that the magnitude and polarity of substrate bias significantly influence the microstructure and electrical properties.

• Journal of Magnetics
• /
• v.10 no.4
• /
• pp.133-136
• /
• 2005

The NiMn/NiFe bilayer structure which was short time annealed in order to induce unidirectional anisotropy were studied as a function of annealing temperature. The maximum exchange bias field of NiMn/NiFe bilayer was presented at $250^{\circ}C$ after short time annealing process with no external field. The appearance of exchange bias was due to phase transformation of NiMn layer. In plane angular dependence of a resonance field distribution which measured by FMR was analysed as a combined effect of unidirectional anisotropy and uniaxial anisotropy. The resonance field and the line width from FMR measurement were also analysed with annealing temperature.

• The Journal of Asian Finance, Economics and Business
• /
• v.9 no.10
• /
• pp.97-104
• /
• 2022

The purpose of the existing work is to inspect the impact of knowledge management on organizational performance. Business experts now appreciate how important knowledge management is for organizational performance. Earlier studies have investigated the research model with causal linkages, however, only a few of them have considered sample-selecting bias problems when analyzing the model of knowledge management on organizational performance. The number of 312 executives related to knowledge management from 312 enterprises that have been approved with quality management systems offered suitable responses for analyses. The data was employed to investigate the effect of knowledge management on organizational performance, considering sample-selecting bias. The empirical outcomes indicate that sample-selecting bias exists in the causal impact of knowledge management on organizational performance. The empirical findings are helpful to scholars of knowledge management as well as business executives by giving an insight into the casual effect of knowledge management on organizational performance with the intervention of sample-selecting bias. The acceptance of knowledge management should be tailored to improve competitive advantages that will lead to better organizational performance.

• Journal of the Korean Vacuum Society
• /
• v.7 no.2
• /
• pp.94-103
• /
• 1998

We investigated a bias effect for diamond films deposited by a HFCVD(Hot Filament Chemical Vapor Deposition) method using a methane-hydrogen gas mixture. During deposition total chamber pressure, methane concentration, filament temperature and substrate temperature was 20 torr, 1.0%, $2100^{\circ}C$ and $980^{\circ}C$ respectively. Also DC bias was applied during both the nucleation stage and the growth stage systematically. We found that negative bias enhanced the nucleation density at the nucleation stage, but it made a bad influence on the morpholohy of films at the growth stage. Positive bias enhanced the growth rate and resulted in a good morpholohy of films. Therefore we concluded that it was effective to apply the negative bias during the nucleation stage and then to switch into the positive bias during the growth stage in the fabrication of diamond films.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 1999.10a
• /
• pp.73-75
• /
• 1999