• Bulletin of the Korean Chemical Society
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• v.15 no.11
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• pp.980-984
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• 1994

Monomeric rhodium and iridium diimine complexes $Cp^*M(HNRNH)(Cp^*$ = 1,2,3,4,5-pentamethylcyclopentadienyl : (M=lr; R=o-$C_6H_4 (1a), 4,5-(CH_3)_2-C_6H_2-1,2 (1b), 4,5-(Cl)_2-C_6H_2-1,2$ (1c), NCC=CCN-1,2 (1d): M=Rh; R=NCC=CCN-1,2 (1e)) have been synthesized from $[CP^*MCl_2]_2$ and 2 equiv. of diamine in the presence of $NEt_3$. The Crystal structure of 1a was determined by X-ray diffraction method : 1a was crystallized in the monoclinic system, space group $P2_{1/c}$, with lattice constants a=9.543 (1) ${\AA}$, b=16.286 (1) ${\AA}$, c=10.068 (1) ${\AA}$ and ${\beta}$=99.25 (1), with Z= 4. Least-squares refinement of the structure led to R factor of 0.049. The coordination sphere of rhodium and iridium can be described as a 2-legged piano-stool. All complexes are highly colored. Electrochemical studies show that 1d and 1e display quasi-reversible reduction and 1a-1c display irreversible reductions, suggesting that the acceptor orbital might be localized on the diimine ring.

• Korean Journal of Materials Research
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• v.29 no.9
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• pp.547-552
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• 2019

In the present study, the thermal conductivity of a silicon nitride($Si_3N_4$) thin-film is evaluated using the dual-wavelength pump-probe technique. A 100-nm thick $Si_3N_4$ film is deposited on a silicon (100) wafer using the radio frequency plasma enhanced chemical vapor deposition technique and film structural characteristics are observed using the X-ray reflectivity technique. The film's thermal conductivity is measured using a pump-probe setup powered by a femtosecond laser system of which pump-beam wavelength is frequency-doubled using a beta barium borate crystal. A multilayer transient heat conduction equation is numerically solved to quantify the film property. A finite difference method based on the Crank-Nicolson scheme is employed for the computation so that the experimental data can be curve-fitted. Results show that the thermal conductivity value of the film is lower than that of its bulk status by an order of magnitude. This investigation offers an effective way to evaluate thermophysical properties of nanoscale ceramic and dielectric materials with high temporal and spatial resolutions.

• Journal of the Korean Chemical Society
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• v.20 no.1
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• pp.19-34
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• 1976

The crystal structure of sodium sulfisoxazole hexahydrate, $C_{11}H_{12}N_3O_3SNa{\cdot}6H_2O$,has been determined by X-ray diffraction method. The compound crystallizes in the monoclinic space group $$P2_1}c$$ with a = 15.68(3), b = 7.70(2), c = 17.94(4)${\AA}$, ${\beta}$ = $118(2)^{\circ}$ and Z = 4. A total of 1717 observed reflections were collected by the Weissenberg method with $CuK{\alpha}$ radiation. Structure was solved by heavy atom method and refined by block-diagonal least-squares methods to the R value of 0.14. The conformational angle formed by the S-C(l) bond with that of N(2)-C(7), when the projection in taken along the S-N(2), is $73^{\circ}.$ The benzene ring is planar and makes an angle of $60^{\circ}$ with the plane of the isoxazole ring, which is also planar. The sodium atom has a distorted octahedral coordination of N(l) and five oxygen atoms from hydrate molecules. Sodium sulfisoxazole hexahydrate shows fourteen different hydrogen bondings in the crystal. These are six $O-H{\cdots}O-H bonds, three $O-H{\cdots}O$ bonds, two $O-N{\cdots}N,$ one $N-H{\cdots}O,O-H{\cdots}N,N-H{\cdots}O-H$ bond, with the distances in the range of 2.71 to $3.04{\AA}.$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.21 no.3
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• pp.99-104
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• 2011

A stoichiometric mixture of evaporating materials for $MgGa_2Se_4$ single crystal thin films was prepared from horizontal electric furnace. The crystal structure of these compounds has a rhombohedral structure with lattice constants $a_0=3.953\;{\AA}$, $c_0=38.890\;{\AA}$. To obtain the single crystal thin films, $MgGa_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $610^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the double crystal X-ray rocking curve and X-ray diffraction ${\omega}-2{\theta}$ scans. The carrier density and mobility of $MgGa_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method were $6.21{\times}10^{18}\;cm^{-3}$ and 248 $cm^2/v{\cdot}s$ at 293 K, respectively. The optical absorption of $MgGa_2Se_4$ single crystal thin films was investigated in the temperature range from 10 K to 293 K. The temperature dependence of the optical energy gap of the $MgGa_2Se_4$ obtained from the absorption spectra was well described by the Varshni's equation, $E_g(T)=E_g(0)-({\alpha}T^2/T+{\beta})$. The constants of Varshni's equation had the values of $E_g(0)=2.34\;eV$, ${\alpha}=8.81{\times}10^{-4}\;eV/K$ and ${\beta}=251\;K$, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.08a
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• pp.84-91
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• 2002

The stochiometric composition of $AgGaS_2$/GaAs polycrystal source materials for the $AgGaS_2$/GaAs epilayer was prepared from horizontal furnace. From the extrapolation method of X-ray diffraction patterns it was found that the polycrystal $AgGaS_2$/GaAs has tetragonal structure of which lattice constant an and Co were 5.756 $\AA$ and 10.305 $\AA$, respectively. $AgGaS_2$/GaAs epilayer was deposited on throughly etched GaAs(100) substrate from mixed crystal $AgGaS_2$/GaAs by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $590^{\circ}C$ and $440^{\circ}C$ respectively. The crystallinity of the grown $AgGaS_2$/GaAs epilayer was investigated by the DCRC (double crystal X-ray diffraction rocking curve). The optical energy gaps were found to be 2.61 eV for $AgGaS_2$/GaAs epilayer at room temperature. The temperature dependence of the photocurrent peak energy is well explained by the Varshni equation, then the constants in the Varshni equation are given by $\alpha=8.695{\times}10^{-4}$ eV/K, and $\beta=332K$. From the photocurrent spectra by illumination of polarized light of the $AgGaS_2$/GaAs epilayer, we have found that crystal field splitting ${\Delta}Cr$ was 0.28 eV at 20 K. From the PL spectra at 20 K, the peaks corresponding to free and bound excitons and a broad emission band due to D-A pairs are identified. The binding energy of the free excitons are determined to be 0.2676 eV and 0.2430 eV and the dissociation energy of the bound excitons to be 0.4695 eV.

• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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• v.3 no.3
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• pp.159-165
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• 2005

The characterization of radiological contamination inside pipes generated during the decommission of a nuclear facility is necessary before pipes can be recycled or disposed. But, existing direct measurements of radioactive contamination level using the survey-meter can not estimate the characteristic of contamination on a local area such as the pipe inside. Moreover, the measurement of surface contamination level using the indirect methods has many problems of an application because of the difficulty of collecting sample and contamination possibility of a worker when collecting sample. In this work, plastic scintillator was simulated by using Monte Carlo simulation method for detection of beta radiation emitted from internal surfaces of small diameter pipe. Simulation results predicted the optimum thickness and geometry of plastic scintillator at which energy absorption for beta radiation was maximized. In addition, the problem of scintillator processing and transferring the detector into the pipe inside was considered when fabricating the plastic detector on the basis of simulation results. The characteristic of detector fabricated was also estimated. As a result, it was confirmed that detector capability was suitable for the measurement of contamination level. Also, the development of a detector for estimating the radiological characteristic of contamination on a local area such as the pipe inside was proven to be feasible.

• Asian Pacific Journal of Cancer Prevention
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• v.15 no.10
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• pp.4153-4158
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• 2014

Background: This study was aimed to establish a novel method to simultaneously detect expression of four genes, ribonucleotide reductase subunit M1(RRM1), X-ray repair cross-complementing gene 1 (XRCC1), thymidylate synthase (TS) and class III ${\beta}$-tubulin (TUBB3), and to assess their application in the clinic for prediction of response of non-small cell lung cancer (NSCLC) to chemoradiotherapy. Materials and Methods: We have designed four gene molecular beacon (MB) probes for multiplex quantitative real-time polymerase chain reactions to examine RRM1, XRCC1, TUBB3 and TS mRNA expression in paraffin-embedded specimens from 50 patients with advanced or metastatic carcinomas. Twenty one NSCLC patients receiving cisplatin-based first-line treatment were analyzed. Results: These molecular beacon probes could specially bind to their target genes in homogeneous solutions. Patients with low RRM1 and XRCC1 mRNA levels were found to have apparently higher response rates to chemoradiotherapy compared with those with high levels of RRM1 and XRCC1 expression (p<0.05). The TS gene expression level was not significantly associated with chemotherapy response (p>0.05). Conclusions: A method of simultaneously detecting four molecular markers was successfully established and applied for evaluation of chemoradiotherapy response. It may be a useful tool in personalized cancer therapy.

• Journal of the Korean Ceramic Society
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• v.33 no.1
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• pp.1-6
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• 1996

A single phase Ba2(Ti8,472Zr0.528)O20 was prepared by the oxalate method from aqueous solution of BaCl2 TiCl4 and ZrOCl2. The structure ananlysis has been carried out by Rietveld analysis method at room temperature. Powder X-ray data of Ba2(Ti8,472Zr0.528)O20 was indexed with the triclinic lattice(a=7.4587 $\AA$ b=14.0672 $\AA$, c=13.3327 $\AA$, $\alpha$=89.87, $\beta$=79.45 ${\gamma}$=84.46) The R (Residual) values of structure refinement were in a range between 10.00 and 8.00 This analysis proved that the added Zr occupied Ti sites in th structure of Ba2Ti9O20. Ba2(Ti8,472Zr0.528)O20 has excellent dielectric properties(dielectric constant K=40.49 at 5.42 GHz Q=4621) so that it can be used as good microwave dielectric materials.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.81-81
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• 2003

The stochiometric mixture of evaporating materials for the CuGaSe$_2$ single crystal thin films were prepared from horizontal furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal CuGaSe$_2$, it was found tetragonal structure whose lattice constant no and co were 5.615$\AA$ and 11.025$\AA$, respectively. To obtains the single crystal thin films, CuGaSe$_2$ mixed crystal was deposited on throughly etched GaAs(100) by the Hot Wall Epitaxy(HWE) system. The source and substrate temperature were 61$0^{\circ}C$ and 45$0^{\circ}C$ respectively, and the growth rate of the single crystal thin films was about 0.5${\mu}{\textrm}{m}$/h. The crystalline structure of single crystal thin films was investigated by the double crystal X-ray diffraction(DCXD). Hall effect on this sample was measured by the method of van der pauw and studied on carrier density and mobility depending on temperature. From Hall data, the mobility was likely to be decreased by pizoelectric scattering in the temperature range 30K to 150K and by polar optical scattering in the temperature range 150K to 293K. The optical energy gaps were found to be 1.68eV for CuGaSe$_2$ single crystal thin films at room temperature. The temperature dependence of the photocurrent peak energy is well explained by the Varshni equation then the constants in the Varshni equation are given by a=9.615$\times$ 10$^{-4}$ eV/K, and $\beta$=335K. From the photocurrent spectra by illumination of polarized light of the CuGaSe$_2$ single crystal thin films. We have found that values of spin orbit coupling ΔSo and crystal field splitting ΔCr was 0.0900eV and 0.2498eV, respectively. From the PL spectra at 20K, the peaks corresponding to free bound excitons and D-A pair and a broad emission band due to SA is identified. The binding energy of the free excitons are determined to be 0.0626eV and the dissipation energy of the acceptor-bound exciton and donor-bound exciton to be 0.0352eV, 0.0932eV, respectively.

• Journal of the Korean Chemical Society
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• v.21 no.5
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• pp.307-319
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• 1977

The crystal structure of $N-({\alpha}-dimethyl\;{\beta}-hydroxy)ethyl\;N'-cyclohexyl\;thiourea,\;C_{ll}H_{22}N_2OS)$, has been determined by X-ray diffraction method. The compound crystallizes in the orthorhombic space group Pbca with a = 10.33(3), b = 11.82(3), c = 22.57(4)${\AA}$ and Z = 8. A total of 1414 observed reflections collected by the Weissenberg photographs and was solved by heavy atom method and refined by block diagonal least-squares methods to the R value of 0.13. The cyclohexane ring has a normal chair conformation and the thiourea unit is planar. The primary alcoholic group O-H bonded to C(l) makes an intramolecular hydrogen bond with N(2), which leads to stablize the molecule. There are two independent hydrogen bonds in the structure. One of them is of the type N-H${\cdot}{\cdot}{\cdot}$O intramolecular hydrogen bond with the length 2.71${\AA}$, another is of the type O-H${\cdot}{\cdot}{\cdot}$S intermolecular hydrogen bond with the length 3.21${\AA}$ parallel to the b axis. Apart from the hydrogen bonding system the molecules are held together by van der Waals forces in the crystal.