• Journal of the Korea institute for structural maintenance and inspection
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• v.2 no.4
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• pp.159-171
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• 1998

This study attempts to develop a rational approach to flexural concrete beam analysis with crack growth. In order to develope analytical solutions, several simplification and assumption are made and the Hillerborg fictitious crack model is adapted for new rational approach to the flexural concrete beam. To provide desired results, the concrete beams with various conditions(more than 126 beam conditions) are analyzed. Before producing the results, these assumptions are founded to be justified by comparison with a FE analysis. The results for each condition of the beams are presented in terms of crack lengths, the strength and cracking stability of concrete beams. And also size effects in a flexural concrete beam is studied using a new flexural cracking model.

• Korean Journal of Materials Research
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• v.21 no.11
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• pp.634-638
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• 2011

We report growth of epitaxial AlN thin films on c-plane sapphire substrates by plasma-assisted molecular beam epitaxy. To achieve two-dimensional growth the substrates were nitrided by nitrogen plasma prior to the AlN growth, which resulted in the formation of a two-dimensional single crystalline AlN layer. The formation of the two-dimensional AlN layer by the nitridation process was confirmed by the observation of streaky reflection high energy electron diffraction (RHEED) patterns. The growth of AlN thin films was performed on the nitrided AlN layer by changing the Al beam flux with the fixed nitrogen flux at 860$^{\circ}C$. The growth mode of AlN films was also affected by the beam flux. By increasing the Al beam flux, two-dimensional growth of AlN films was favored, and a very flat surface with a root mean square roughness of 0.196 nm (for the 2 ${\mu}m$ ${\times}$ 2 ${\mu}m$ area) was obtained. Interestingly, additional diffraction lines were observed for the two-dimensionally grown AlN films, which were probably caused by the Al adlayer, which was similar to a report of Ga adlayer in the two-dimensional growth of GaN. Al droplets were observed in the sample grown with a higher Al beam flux after cooling to room temperature, which resulted from the excessive Al flux.

• Journal of Applied Biological Chemistry
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• v.49 no.4
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• pp.176-179
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• 2006

Electron beam irradiation was applied to examine the microbial growth and qualities of vacuum-packaged Astragalus membranaceus, a Korean medicinal herb. Samples were irradiated at dose of 2, 4, 8, 12, and 16 kGy, respectively. Microbiological data on A. membranaceus showed that populations of total bacteria, yeast and mold, total coliforms were significantly reduced with increase of irradiation dose. Populations of microorganisms in A. membranaceus were decreased by 2-3 log cycles at 8 kGy irradiation. Color measurements showed that electron beam treatment caused negligible changes in Hunter color L, a, and b values of A. membranaceus. Sensory evaluations showed that there were no significant changes among the samples. These results suggest that electron beam irradiated A. membranaceus have better microbial safety and qualities, compared with the non-irradiated control.

• Steel and Composite Structures
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• v.18 no.3
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• pp.641-657
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• 2015

Application of reduced web beam section (RWBS) as a sacrificial fuse element has become a popular research field in recent years. Weakening of beam web in these connections may cause local web buckling around the opening area which can affect cyclic behavior of connection including: maximum load carrying capacity, strength degradation rate, dissipated energy, rotation capacity, etc. In this research, effect of local web buckling on the cyclic behavior of RWBS connections is investigated using finite element modeling (FEM). For this purpose, a T-shaped moment connection which has been tested under cyclic loading by another author is used as the reference model. Fracture initiation in models is simulated using Cyclic Void Growth Model (CVGM) which is based on micro-void growth and coalescence. Included in the results are: effect of opening corner radii, opening dimensions, beam web thickness and opening reinforcement. Based on the results, local web buckling around the opening area plays a significant role on the cyclic behavior of connection and hence any parameter affecting the local web buckling will affect entire connection behavior.

• Journal of Radiation Industry
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• v.8 no.1
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• pp.1-5
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• 2014

This study investigated the reduction of microbial population and sensory properties in red pepper powders irradiated by gamma ray, electron beam, and X-ray. Populations of total aerobic bacteria and yeast & molds in red pepper powders were decreased by irradiation treatment in a dose-dependent manner. Gamma ray, electron beam, and X-ray at doses above 8 kGy caused 100% inhibition on growth of aerobic bacteria in red pepper powders. Inhibitory activity of X-ray on sterilization of red pepper powders was significantly equal to or higher compared to gamma ray and electron beam. Color and off flavor in red pepper powders were no significant difference among the control and samples irradiated with gamma ray, electron beam, and X-ray. As a result, the gamma ray, electron beam, and X-ray irradiation can be used to sterilize the microbial growth in red pepper powders without quality loss.

• Proceedings of the Korean Magnestics Society Conference
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• 2009.12a
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• pp.190-190
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• 2009

We report the epitaxial growth of MgO and CoFe/MgO on Ge (001) substrates using molecular beam epitaxy. It was found that the epitaxial growth of a MgO film on Ge could be realized at a low growth temperature of $125{\pm}5^{\circ}C$ and the MgO matches the Ge with a cell ratio of $\sqrt{2}$:1 which renders MgO rotated by $45^{\circ}$ relative to Ge. In-situ and ex-situ structural characterizations reveal the epitaxial crystal growth of bcc CoFe/MgO on Ge with the in-plane crystallographic relationship of CoFe(001)[100] || MgO(001)[110] || Ge(001)[100], exhibiting sharp interfaces in the (001) matching planes. The saturation magnetization of the sample is $1430{\pm}20$ emu/cc, which is comparable to the value of bulk CoFe.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 1998.03a
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• pp.178-183
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• 1998

This paper examines the crack growth behavior of 7075-T651 and 5052-H32 aluminum alloys for variable load within tensile load range condition. The cantilever beam type specimen with a chevron notch is used in this study. The crack growth and closure are investgated by compliance method. The applied initial stress ratio is R=0.3 and variable load are R=0.65, 0.46. Crack length, stress intensity factor range, ratio of effective stress intensity factor range and crack growth rate etc. are inspected with fracture mechanics estimate.

• Transactions on Electrical and Electronic Materials
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• v.1 no.3
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• pp.18-22
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• 2000

In this work, we reported the sulfur compositional variation of ZnS$\_$x/Se$\_$1-x/ epitaxial layers with growth temperature and BEP ration of ZnX/Se/)P$\_$ZnS//P$\_$Se/) grown on GaAs substrates by molecular beam epitaxy. The sulfur composition of ZnSSe epitaxial layers was varied sensitively on the growth temperature and show different linear relationship with growth temperature and BEP ration of ZnS/Se(P$\_$ZnS//P$\_$Se/), which revealed -0.107 %$\^{C}$ at (P$\_$ZnS//P$\_$Se/)=0.30 and -0.052 %$\^{C}$ at (P$\_$ZnS//P$\_$Se/)=0.158 rspectively. A reference data for the accurate control of the sulfur composition and the growth of high quality ZnSSe/GaAs epitaxial layers was provided.

• Journal of Korean Vacuum Science & Technology
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• v.3 no.2
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• pp.139-144
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• 1999

Hydrogen concentration depth profiles in homoepitaxial Si(001) films grown from hyper-thermal Si beams generated by ultrahigh vacuum (UHV) ion-beam sputtering have been measured by nuclear reaction analyses as a function of film growth temperature and deposition rate. Bulk H concentrations CH in the crystalline Si layers were found tio be below detection limits, 1${\times}$1019cm-3, with no indication of significant H surface segregation at the crystalline/amorphous interface region. This is quite different than the case for growth by molecular-beam epitaxy (MBE) where strong surface segregation was observed for similar deposition conditions with average CH values of 1${\times}$1020cm-3 in the amorphous overlayer. The markedly decreased H concentrations in the present experiments are due primarily to hydrogen desorption by incident hyperthermal Si atoms. Reduced H surface coverages during growth combined with collisionally-induced filling of interisland trenches and enhanced interlayer mass transport provide an increase in critical epitaxial thicknesses by up to an order of magnitude over previous MBE results.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.8
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• pp.81-87
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• 1993

The growth thickness uniformity of epitaxial layers deposited using a moiecular beam epitaxy system is calculated from the arrangement of molecular beam source and the substrate and the geometric dimensions of the crucible in order to predict the optimum design conditions of the prototype MBE system. The thickness uniformity better than 5% over a 3-inch wafer can be obtained by keeping the distance between the substrate and the crucible's orifice longer than 20cm, the tapering angle of the crucible larger than 6$^{\circ}$, and the angle between the normal to the substrate at the center and the crucible axis as larger as possible. In addition, the growth yield decreases to below 51% as the distance between the substrate and the orifice becomes longer than 25cm.