• Proceedings of the Korean Vacuum Society Conference
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• 1994.06a
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• pp.98-99
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• 1994

• Proceedings of the Korean Vacuum Society Conference
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• 2008.08a
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• pp.101-101
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• 2008

• Proceedings of the Korean Vacuum Society Conference
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• 2008.08a
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• pp.126-126
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• 2008

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.08a
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• pp.71.2-71
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• 1998

• Journal of Radiation Industry
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• v.17 no.1
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• pp.75-82
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• 2023

This research was carried out to evaluate on microbiological (total aerobic bacteria, yeast and mold) and physicochemical (color, firmness, water content, water activity and weight loss) characteristics of 10MeV electron-beam irradiated(0, 0.5, 1, 2 and 3kGy) enoki mushroom during storage (0, 7, 14, 21 and 28 day) at 4℃ with 80% relative humidity. As compared to control, all irradiated samples exhibited dose-dependent decreases of microbial counts up to 28 days, and electron beam irradiation above 2 kGy kept below the microbiological safety threshold. Yellowness (b^*) which is associated with discoloration of mushrooms was significantly reduced by electron beam irradiation (2 kGy). Firmness, water content, water activity and weight loss showed no significant difference in all group up to 28 days. Thus, the appropriate electron-beam irradiation dose was confirmed as 2 kGy to inhibit the microbial growth and browning reaction in enoki mushroom.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.114-114
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• 2009

ZnO has received considerable attention due to its potential applicability to optoelectronic devices such as ultraviolet-light emitting diodes (UVLEDs) and laser diodes (LDs). As well known, however, polar ZnO with the growth direction along the c-axis has spontaneous and piezoelectric polarizations that will result in decreased quantum efficiency. Recently, nonpolar ZnO has been studied to avoid such a polarization effect. In order to realize applications of nonpoar ZnO-based films to LEDs, growth of high quality alloys for quantum well structures is one of the important tasks that should be solved. $Mg_xZn_{1-x}O$ and $Cd_xZn_{1-x}O$ is ones of most promising alloys for this application because the alloys of ZnO with MgO and CdO provide a wide range of band-gap engineering spanning from 2.4 to 7.8 eV. In this study, we investigated on $Mg_xZn_{1-x}O$ films grown with various Mg/Zn flux ratios The films were grown on R-plane sapphire substrates by plasma-assisted molecular beam epitaxy (PAMBE). we investigated on $Mg_xZn_{1-x}O$ films grown with various Mg/Zn flux ratios. The films were grown on R-plane sapphire substrates by plasma-assisted molecular beam epitaxy (PAMBE). With the relatively low Mg/Zn flux ratios, a typical striated anisotropic surface morphology which was generally observed from the nonpolar (11-20) ZnO film on r-plane sapphire substrates. By increasing the Mg/Zn flux ratio, however, additional islands were appeared on the surface and finally the surface morphology was entirely changed, which was generally observed for the (0001) polar ZnO films by losing the striated morphology. Investigations by X-ray $\Theta-2{\Theta}$ diffraction revealed that (0002) and (10-11) ZnO planes are appeared in $Mg_xZn_{1-x}O$ films by increasing the Mg/Zn flux ratio. Further detailed investigation by transmission electron microscopy (TEM) and photoluminescence (PL) will be discussed.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.2
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• pp.173-179
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• 1999

The effect of the surface activation treatment on the crystallization of the amorphous silicon film was investigated. The amorphous silicon film was deposited on the silica substrate with LPCVD technique. Wet blasting with silica slurry or exposure with Nd:YAG laser beam was applied on the amorphous silicon film before annealing for the crystallization. For the analysis of the crystallinity, XRD, Raman, and SEM were employed. In this investigation, the prior surface activation treatment like silica wet blasting or Nd:YAG laser beam exposure before annealing for the crystallization were found to be effective in the enhancement of the crystallization. It is believed that these treatment lower the activation energy required for the crystallization of the amorphous silicon film.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.53-53
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• 2003

최근 높은 유전상수와 잔류 분극, 비선형 등의 다양한 유전적인 특성으로 인해 산화물 박막이 많은 관심을 가지고 연구되어지고 있다. 많은 산화물 박막중에서도 BaTiO3/SiTiO3 (BTO/STO) 인 공격자는 STO나 BTO 또는 (Ba$_{0.5}$ Sr$_{0.5}$)TiO$_3$ (BST)등의 고용체들과 비교했을 때 아주 뛰어난 유전적인 성질을 나타내고 있다. 특히 1000 $\AA$ 이하의 낮은 두께에서도 높은 유전상수와 비선형도를 가진다는 사실이 선행된 실험에서 밝혀졌는데 BTO와 STO를 각각 2 unit cell (8 $\AA$)로 고정 시킨 후 다층 박막으로 제작했을 때 가장 큰 유전 특성을 얻을 수 있었다. 이런 뛰어난 유전적인 성질은 BTO와 STO 각 층의 두께와 주기 변화에 따른 박막 내부의 인위적인 stress와 그에 따른 격자 변형과 아주 밀접한 관계가 있음으로 생각되어진다. 따라서 이런 두 계면에서의 stress와 격자 변형을 더욱 정착하게 분석하기 위해서는 각 층을 원자 단위로 정확하게 두께 제어를 하고 증착되어지는 과정중에서의 growth mode를 확인하는 것이 무엇보다 중요한 일이다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.2
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• pp.194-202
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• 1996

Transmission electron microscopy has been used to characterize the dislocation structure in hot-pressed titanium diboride. The thin foil samples were prepared by the conventional ion beam thinning technique and reveal the main features associated with the dislocations ; low-angle grain boundaries with dislocation arrays, high-angle grain boundaries with ledges/steps on the boundary planes. The ledges/steps on the grain boundaries were characterized as the origin of defect structures such as dislocation formation or crack propagation near grain boundaries. A fraction of the high angle grain boundaries contained periodic arrays of grain boundary dislocations. The Burger's vectors of the dislocations in the $TiB_{2}$specimens were determined.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.5
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• pp.459-462
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• 1999

Recent advances in NLO Borate Crystals for UV Generation are reviewed with the particular emphasis on the technique to improve the life time of UV optics. The laser-damage resistance of CLBO and fused silica surfaces was successfully improved after removing polishing compound by ion beam etching. The polishing compound embedded in the CLBO and fused silica surfaces were to a depth of less than 100nm. We were able to remove polishing compound without degrading the surface condition when the applied ion beam voltage was less than 200 V. The laser-induced surface damage threshold of CLBO was improved up to 15J/$\textrm{cm}^2$(wavelength: 355 nm, pulse width: 0.85 ns)as compared with that of the as-polished surface (11 J/$\textrm{cm}^2$). The laser-induced surface damage of fused silica also increased from 7.5J/$\textrm{cm}^2$ to 15J/$\textrm{cm}^2$. For the irradiation of a 266 nm high-intensity and high-repetition laser light, the surface lifetime of CLBO and fused silica could be more doubled compared with that of the as-polished surface.