• JSTS:Journal of Semiconductor Technology and Science
• /
• v.2 no.3
• /
• pp.213-225
• /
• 2002

Metal-Ferroelectric- Insulator- Silicon (MFIS) structured field effect transistor (FET) device was fabricated and characterized. Important issues to realize ferroelectric gate field effect transistor device were summarized in three sections. The choice of interlayer dielectric was made in the consideration of device functionality and chemical reaction between ferroelectric materials and silicon surface during fabrication process. Also, various ferroelectric thin film materials were taken into account to meet desired memory window and process compatibility. Finally, MFIS structured FET device was fabricated and important characteristics were discussed. For feasible integration of current device as random access memory array cell address schemes were also suggested.

• Journal of Korea Technology Innovation Society
• /
• v.21 no.3
• /
• pp.938-968
• /
• 2018

Korea's basic research has been rapidly expended in both quantative and qualitative aspect since establishment of 'the Korea Science & Engineering Foundation' in 1977, proclaiming of 'the First Year of Basic Research Promotion' and enactment of 'the Basic Sciences Promotion Act' in 1989. Despite the continuous increment of government basic research funding, the problem of low perceptions of university researchers on the funding increment has been constantly raised. Based on an intrinsic review on the core issues are diagnosed based on Korean academics' basic research status analysis and future challenges are proposed based on the precedent diagnoses. The six key issues that need to take the next step in Korean academics' basic research are as follows: (1) basic research investment in universities, (2) appropriate research expenses for supporting individual researcher, (3) basic research funding allocation method, (4) maintaining the sustainable success rate of research projects, (5) systematic and strategic support for excellent researchers, (6) creating research-immersive environment. The five challenges to promote basic research in academics are as follows: (1) increasing in university research expenses, (2) diversification of basic research funding allocation method, (3) establishment of research field-specified support system and predictable principles, (4) stable and sufficient support for outstanding researchers, (5) reducing burden on research administration.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 1998.08a
• /
• pp.71.2-71
• /
• 1998

• Bulletin of the Korean Chemical Society
• /
• v.33 no.2
• /
• pp.721-724
• /
• 2012

• ETRI Journal
• /
• v.27 no.5
• /
• pp.484-490
• /
• 2005

We fabricated 40 Gb/s front-end optical receivers using spot-size converter integrated waveguide photodiodes (SSC-WGPDs). The fabricated SSC-WGPD chips showed a high responsivity of approximately 0.8 A/W and a 3 dB bandwidth of approximately 40 GHz. A selective wet-etching method was first adopted to realize the required width and depth of a tapered waveguide. Two types of electrical pre-amplifier chips were used in our study. One has higher gain and the other has a broader bandwidth. The 3 dB bandwidths of the higher gain and broader bandwidth modules were about 32 and 42 GHz, respectively. Clear 40 Gb/s non-return-to-zero (NRZ) eye diagrams showed good system applicability of these modules.

• ETRI Journal
• /
• v.25 no.4
• /
• pp.270-273
• /
• 2003

This paper presents a simple process to integrate thin-film inductors with a bottom NiFe magnetic core. NiFe thin films with a thickness of 2 to 3${\mu}m$ were deposited by sputtering. A polyimide buffer layer and shadow mask were used to relax the stress of the NiFe films. The fabricated double spiral thin-film inductor showed an inductance of 0.49${\mu}H$ and a Q factor of 4.8 at 8 MHz. The DC-DC converter with the monolithically integrated thin-film inductor showed comparable performances to those with sandwiched magnetic layers. We simplified the integration process by eliminating the planarization process for the top magnetic core. The efficiency of the DC-DC converter with the monolithic thin-film inductor was 72% when the input voltage and output voltage were 3.5 V and 6 V, respectively, at an operating frequency of 8 MHz.

• 한국생물공학회:학술대회논문집
• /
• 2003.10a
• /
• pp.608-608
• /
• 2003

• Proceedings of the Korean Vacuum Society Conference
• /
• 2009.08a
• /
• pp.351-351
• /
• 2009

• Bulletin of the Korean Chemical Society
• /
• v.10 no.5
• /
• pp.463-465
• /
• 1989

• 한국정보디스플레이학회:학술대회논문집
• /
• 2004.08a
• /
• pp.923-926
• /
• 2004

Active-matrix field emission display (AMFED) based on carbon nanotube (CNT) emitter and amorphous silicon thin-film transistor (a-Si TFT) is reviewed. The AMFED pixels consisted of a high-voltage a-Si TFT and mesh-gated CNT emitters. The developed AMFED panel showed a high performance with a driving voltage of below 15 V. The low-cost and large-area AMFED approach with a metal mesh technology will be discussed.