• Journal of the Semiconductor & Display Technology
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• v.15 no.1
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• pp.70-75
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• 2016

GZO films prepared on ITO glasses were annealed at various temperatures in a vacuum condition to research the relationship between oxygen vacancies and optical properties. GZO films after annealing in a vacuum showed the various optical-chemical properties depending on the annealing temperatures and oxygen gas flow rate during the deposition. The oxygen vacancy of GZO film prepared by oxygen gas flows of 22 sccm increased with increasing the annealing temperatures, because of the extraction of oxygen by the annealing. But the intensity of photoluminance of GZO with 22 sccm decreased in accordance with the annealing temperature, because of the reduction of ionized charge carriers. The oxygen vacancy by the extraction of oxygen enhanced a depletion, so the widen depletion had the strong Schottky barrier and the PL intensity due to the low carrier density decreased.

• Journal of the Korean Vacuum Society
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• v.4 no.S2
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• pp.79-82
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• 1995

$N^+$ beam modified diffusion barriers have been proposed for Cu metallization . The crystalline phases of W and Ti thin films change from polycrytalline to amorphous phase by the N ion implantation of 1~$3\times 10^{17}$atoms/$\textrm{cm}^2$. The comparison between these amorphized diffusion barriers and the conventional W and TiN films shows that the amorphized W and Ti diffusion barriers are superior to the conventional w and TiN for protecting the Cu diffusion barriers are superior to the conventional W and TiN for protecting the Cu diffusion at the annealing temperature range $600^{\circ}C$~$800^{\circ}C$ for 30min. This is a worldwidely new and excellent result on the high temperature thermal stability of diffusion barrier.

• Korean Journal of Materials Research
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• v.9 no.12
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• pp.1229-1233
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• 1999

In this research, We fabricated Langmuir-Blodgett(LB) ultra-thin films with (N-docosyl quinolinium)- TCNQ(1:2) complex. The characteristics ${\pi}$-A isotherms were studied to find optimum conditions of deposition by varing temperature of subphase, compression speed of barrier and amount of spreading solution. Film formation was verified by measuring transfer ratio, maximum absorption of UV-vis spectra, capacitance and ellipsometry. From the results, it was concluded that the LB film formed well with molecular oder was fabricated.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.05a
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• pp.124-125
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• 2012

Korea institute of materials science (KIMS) use a linear deposition source called as a closed drift linear plasma source (CDLPS) as well as dual magnetron sputtering (DMS) to deposit SiOxCyHz films in $HMDSO/O_2$ plasma. The CDLPS generates linear plasma using closed drifting electrons and can reduce device degradations due to energetic ion bombardments on organic devices such as organic photovoltaic and organic light emission diode by controlling an ion energy. The deposited films are investigated by Fourier transform infrared (FT-IR) spectroscopy, X-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM). Optical emission spectroscopy (OES) is used to measure relative radical populations of dissociation and recombination products such as H, CH, and CO in plasma. And SiOx film is applied to a barrier film on organic photovoltaic devices.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.352.2-352.2
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• 2014

In this present work, we report a Cu-Mn alloy as a materials for the self-forming barrier process. And we investigated diffusion barrier properties of self-formed layer on low-k dielectrics with or without UV curing treatment. Cu alloy films were directly deposited onto low-k dielectrics by co-sputtering, followed by annealing at various temperatures. X-ray diffraction revealed Cu (111), Cu (200) and Cu (220) peaks for both of Cu alloys. The self-formed layers were investigated by transmission electron microscopy. In order to compare barrier properties between Mn-based interlayer interlayer, thermal stability was measured with various low-k dielectrics. X-ray photoelectron spectroscopy analysis showed that chemical compositions of self-formed layer. The compositions of the Mn based self-formed barriers after annealing were determined by the C concentration in the dielectric layers.

• Journal of the Korean Ceramic Society
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• v.29 no.1
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• pp.48-52
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• 1992

Indium tin oxide (ITO) layers are of considerable interest on account of the combination of properties they provide high electrical conductivity, high infrared reflection with high solar energy transmission, high transmission in the visible range. We are concerned about the variation of the spectral transmittances and sheet resistances as the thickness of SiO2-ZrO2 barrier layer and ITO layers and heat treating conditions are changed. Transmittances and reflectivities were studied by measuring UV-VIS-NIR-, FT-IR spectroscopy. ITO films are crack free, homogeneous and of polycrystalline cubic structure. The microstructure of good ITO films shows a narrow grain size distribution and mean value of 100 nm. The selectivity of absorbing properties is improved by increasing the thickness of ITO films. The increase of sheet resistance of ITO films are due to the increase in the reaction between films and glass substrate.

• Proceedings of the Materials Research Society of Korea Conference
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• 2002.05a
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• pp.59-59
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• 2002

• Proceedings of the Materials Research Society of Korea Conference
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• 1996.11a
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• pp.73-73
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• 1996

• 한국전기화학회:학술대회논문집
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• 1999.04a
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• pp.58-58
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• 1999

• Membrane Journal
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• v.19 no.1
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• pp.19-24
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• 2009

Sol-gel process is relatively simple, easy to use, cheap to install, and results in thin coating layers with superior physical and gas barrier properties. Films coated by the sol-gel process can be used as insulating films or packaging films for foods, chemicals, drugs, and beverages, etc. In this study, alumina sol was synthesized from aluminum isopropoxide and silane coupling agent was added to make coating solutions. In addition, biaxially oriented polypropylene (BOPP) was coated using several alumina sol solutions and their oxygen permeabilities were measured. The experimental results indicate that in the best case, the oxygen permeability of coated film was reduced by 85% compared to that of pure BOPP.