• 한국재료학회지
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• 제13권11호
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• pp.725-731
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• 2003

The effect of organic processing parameters on the dispersion stability of the BaTiO$_3$-based dielectric particles and borosilicate glass particulate suspensions was investigated in a system where organic solvents, dispersant, binder and modifier were used as processing additives in a low temperature cofired ceramic fabrication processes. Two- and three-component organic solvents were used to disperse ceramic particles and it was found the better stability in the particulate suspension prepared in a bi-solvent, which was consists of toluene and ethanol in a non-azeotropic composition. The addition amount of organic additives had a great impact on dispersion in the present investigation. The flow curves of the suspensions prepared with binder and modifier were fitted according to the power-law equation, which indicates that the internal structure of the suspension could be disturbed under the applied shear stress. Finally, the LTCC green tapes were successfully tape-cast based upon the optimum formulation of LTCC suspension and its microstructure was compared with that of the hard-agglomerates.

• 한국정보통신설비학회:학술대회논문집
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• 한국정보통신설비학회 2003년도 하계학술대회
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• pp.286-288
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• 2003

In this paper, in order to obtain a large differential phase shift with a little change in applied voltage, a ferroelectric reflective load circuit has been designed on top of barium strontium titanate $(Ba,Sr)TiO_3$ [BST] thin film. The design of the ferroelectric reflection-type phase shifter is based on a reflection theory of terminating circuit, which has a reflection-type analogue phase shifter with two ports terminated in symmetric phase-controllable reflective networks. To achieve large amounts of phase shift in low bias-voltage range, the effects of change of capacitance and transmission line connected with two coupled ports of a 3-dB $90^{\circ}$ branch-line hybrid coupler have been investigated. A large phase shift with a small capacitance change in the parallel terminating circuit has been demonstrated in the paper.

• 한국세라믹학회지
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• 제35권7호
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• pp.679-684
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• 1998

Dielectricand pyroelectric properties of {{{{ { { {Ba }_{0.67 }Sr }_{0.33 } }`TiO_{3 } ^{ } }} (BST) thin plates and films were investigated. For BST thin plates maximum dielectric constant and pyrolelectric coefficient were observed at around 24$^{\circ}C$ and pyroelectric characteristics were improved as applied bias field was increased. When the electric field of 4kV/cm was applied to the thin plates sintered at 140$0^{\circ}C$ the pyroelectric coefficients over 4$\times$10-7C/{{{{ { cm}^{2 }K }} were obtained in the range of 0-4$0^{\circ}C$ BST thin films deposited using rf magnetron sputtering showed [001] preferred orientation at substrate temperatures above 50$0^{\circ}C$ On the contrary to the thin plates the dielectric constants of the thin films gradually increased above 15$^{\circ}C$ and decreased as applied bias field in-creased. The pyroelectric coefficients of thin films were lower than 1/10 those of thin plates.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.167-167
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• 2008

The barium strontium calcium titanate powders were prepared by sol-gel method. Ferroelectric $(Ba_{0.54}Sr_{0.36}Ca_{0.1})TiO_3$(BSCT) thick films were fabricated by the screen-printing method on alumina substrate. And we investigated the structural and dielectric properties of BSCT thick films with the variation of sintering temperature. As a result of thermal analysis, BSCT polycrystalline perovskite phase was formed at around $660^{\circ}C$. The results of X-ray diffraction analysis were showed a cubic perovskite structure without presence of the second phase in all BSCT thick films. The average grain size and the thickness of the specimen sintered at $1450^{\circ}C$ were about 1.6 mm and 45 mm, respectively. The relative dielectric constant increased and the dielectric loss decreased with increasing the sintering temperature, the values of the BSCT thick films sintered at $1450^{\circ}C$ were 5641 and 0.4% at 1kHz, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.31-31
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• 2008

고주파 잡음 발생과 고집적화 문제 해결을 위해 고용량 디커플링 캐패시터를 기판에 내장하는 연구가 활발히 진행되고 있다. 본 연구에서는 초고주파 환경에서 고용량 기판 내장형 디커플링 캐패시터로의 응용을 위해 $BaTiO_3$박막을 에어로졸 데포지션 법을 이용하여 12~0.2 ${\mu}m$의 두께로 제조하였고 그 유전특성을 조사하였다. 그결과, 1 MHz에서 permittivity가 70, loss tangent은 3% 이하였으며, capacitance density는 $1{\mu}m$의 두께에서 59 nF/$cm^2$이었다. 하지만, 박막의 두께가 $1{\mu}m$ 이하에서는 XRD를 통해 결정성이 확인 되었음에도 큰 누설전류로 인해 유전특성을 확인할 수 없었다. 이 누설전류의 발생 원인을 조사하기 위해 $BaTiO_3$박막의 표면의 미세구조를 SEM으로 관찰한 결과 여러 결함들이 확인되었으며, 또한 전극 직경의 크기를 1.5 mm에서 0.33 mm로 작게 변화시킴으로서 그 유전특성을 조사하여 박막의 불균일성과 박막화의 가능성을 확인하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.180-181
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• 2008

화학양론적 $BaTiO_3$의 소결은 고온의 에너지를 필요로 하며, 내부전극과 세라믹충의 동시소성과정에서 Ni이 세라믹층으로의 확산이 발생되어 PTC의 물성저하를 초래한다. 본 연구에서는 저온에서 액상을 형성하여 소결온도를 낮추는 것으로 알려진 산화물 및 비산화물계 소결첨가제가 적층 PTC 세라믹스의 미세구조 및 전기적 특성에 미치는 영향에 대하여 고찰하였다. 소결과정에서 분해되어 기체를 형성하는 BN, $Li_2CO_3$, LiF의 경우 기공율을 증가시켜 산소의 이동경로를 형성하였으며, 이는 입계의 재산화를 용이하게 하여 PTC 효과를 보였다.

• 전자공학회논문지D
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• 제35D권7호
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• pp.72-78
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• 1998

This paper is focused on the fabrication of reliable novel antifuse, which could operate at low voltage along with the improvement in OFF and ON-state properties. The fabricated antifuse consists of Al/BaTi$_{2}$O$_{3}$/SiO$_{2}$/TiW-silicide structure. Through the systematic analyses for bottom metal and the intermetallic insulator, material and electri cproperties were investiaged. TiW-silicide as the bottom electrode had smooth surface with average roughness of 11.angs. at 10X10.mu.m$^{2}$ and was bing kept as-deposited SiO$_{2}$ film stable. Amorphous BaTi$_{2}$O$_{3}$ film as the another insulator was chosen because of its low breakdown strength (2.5MV/cm). breakdown voltage of antifuse is remarkably reduced by using BaTi$_{2}$O$_{3}$ film, and leakage current of that maintained low level due to the SiO$_{2}$ film. Low ON-resistance (46.ohm./.mu.m$^{2}$) and low programming voltage(9.1V) can be obtained in theses antifuses with 220.angs. double insulator layer and 19.6X10$^{-6}$ cm$^{2}$ area, while keeping sufficient OFF-state reliability (less than 1nA).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.402-405
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• 2001

$(Ba_{0.6-x}Sr_{0.4}Ca_{x})TiO_{3}$ (x=0.10, 0.15, 0.20) ceramics were fabricated by the mixed-oxide method and their stuctural and dielectric properties were investigated with variation of composition ratio and an amount of $Al_{2}O_{3}$ (0.5, 1.0, 1.5. 2.0, 3.0 wt%) doping content. As a result of the X-ray diffraction BSCT specimens showed dense and homogeneous structure without presence of the second phase. The sintered density was decreased with increase an $Al_{2}O_{3}$ doping content. The Curie temperature and relative dielectric constant at room temperature were decreased with increasing an amount of $Al_{2}O_{3}$ doping content. The dielectric loss is minimum for BSCT doped with 1.5wt% $Al_{2}O_{3}$ content. The tunability was decreased with increasing an Ca content and is about 4.2% for BSCT(50/40/10) doped with 2.0wt% $Al_{2}O_{3}$ content.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제50권11호
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• pp.550-554
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• 2001

$(Ba_{0.6}Sr_{0.4}Ca_x)TiO_3 + yAl_2O_3$ wt% (x=0.10, 0.15, 0.20, y=0~3.0) ceramics were fabricated by the mixed-oxide method, and their structural and dielectric properties were investigated with variation of composition ratio and $Al_2O_3$ doping content. As results of the X-ray diffraction and microstructure analysis, all BSCT specimens showed dense and homogeneous structure without presence of the second phase. The sintered density was decreased with an increase of $Al_2O_3$ doping content. The Curie temperature and relative dielectric constant at room temperature were decreased with increasing $Al_2O_3$doping content. The dielectric loss is minimum at BSCT doped with 1.5wt% $Al_2O_3$content. The tunability was decreased with increasing an Ca content and the BSCT(50/40/10) specimen doped with 2.0wt% $Al_2O_3$content showed the maximum value of 4.2%.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.550-551
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• 2012

Physically responsive field-effect transistors (physi-FETs), which are sensitive to physical stimuli, have been studied for decades. However, the primary issue of separating responses by sensing materials from interferences by other subcomponents in a FET transducer under global physical stimuli has not been completely resolved. Recent challenges of structural design and employing smart materials with a large electro-physical coupling effect for flexible physi-FETs still remain. In this article, we propose directly integrating nanocomposites of barium titanate (BT) nanoparticles (NPs) and highly crystalline poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) as gate dielectrics into flexible organic FETs to precisely separate and quantify tiny variations of remnant polarization caused by mechanical stimuli. Investigations under static stimuli resulted in first-reported giant-positive piezoelectric coefficients of d33 up to 960 pC/N, presumably due to significant contribution of the intrinsic piezoelectricity of BT NPs and P(VDF-TrFE) crystallites. This approach provides a general research direction, and not limited to physic-FETs.