• 전기학회논문지
• /
• 제68권1호
• /
• pp.77-82
• /
• 2019

In this paper, a 0.6~6GHz quad-ridge horn antenna which can be used for the antenna measurement of 5.8GHz WiFi system from lowest frequency band of mobile LTE (Long Term Evolution) is designed and implemented. The quad-ridge horn antenna has quadruple ridges of exponential function, a back-short and a cavity. Based on this structure, we design the cavity size, ridge gap and feed gap to have broadband characteristics. For implementation, the plates material of aluminum and copper are used for the horn and four ridges, respectively. And the insulator supports are used to maintain the gap between ridges. By measurement, antenna has the gain of 6.2~13.35dBi with the return loss of less than -6dB (under VSWR 3 : 1) in the entire design band. The results of this study can be widely used to the antenna studies on the mobile communication including low frequency band of LTE, the EMI measurement and the standard calibration measurement.

• Journal of Ceramic Processing Research
• /
• 제20권4호
• /
• pp.431-435
• /
• 2019

The thermal annealing effects on the optical transparency and luminescent characteristics of the Eu-doped Y2O3 thin films have been investigated. The as-deposited Y2O3:Eu films exhibited an optical band gap of 5.78 eV with a transparency of 89 % at a wavelength of 550 nm. As the annealing temperature increased from 1000 to 1300 ℃, the optical band gap and transparency of the films decreased from 5.77 to 4.91 eV and from 86.8 to 64.5 % at 550 nm, respectively. The crystalline quality of the films was improved with increasing annealing temperature. The annealed Y2O3:Eu films emitted a red-color photoluminescence (PL) with the highest emission peak near 612 nm. The PL intensity was increased with increasing annealing temperature to 1200 ℃, resulting from the improvement in the crystalline quality of the films. The PL intensity was decreased with further increasing temperature above 1200 ℃ due to the formation of Y2SiO5 phase by the reaction of the film with the quartz substrate.

• 반도체디스플레이기술학회지
• /
• 제20권4호
• /
• pp.125-129
• /
• 2021

We investigated the electronic property and atomic structure for chalcopyrite (CH) Al_xGa_1-xAs semiconductor by using first-principles FPLMTO method. The CH-Al_xGa_1-xAs exhibits a p-type semiconductor with a direct band-gap. For low Al concentration unoccupied hole-carriers are induced, but for high Al concentration it is formed a localized bonding or anti-bonding state below Fermi level. The hybridization of Al(3s)-Ga(4s, or 4p) is larger than that of Al(3s)-As(4s, or 4p). And the Al film on As-terminated surface, Al/AsGa(001), is more energetically favorable one than that on Ga-terminated (001) surface. Consequently, the band-gap of CH-Al_xGa_1-xAs system increases exponentially with increasing Al concentration. The change of lattice parameter is shown two different configurations with increasing Al concentration. The calculated lattice parameters for CH-Al_xGa_1-xAs system are compared to the experimental ones of zinc-blend GaAs and AlAs.

• 대한전자공학회논문지
• /
• 제25권4호
• /
• pp.402-406
• /
• 1988

The MgGa2Se4 single crystal for study of optical properties is for the first time grown by Bridgmna method. The crystal structure of grown MgGa2Se4 single crystal has the Rhomobohedral structure (R3m) and its lattice constant are a=3.950\ulcorner c=38.893\ulcornerin Hexagonal structure. The energy band structure of grown MgGa2Se4 single crystal structure has direct band gap and the optical energy gap measured from optical absorption in this crystal is 2.20eV at 290K. The temperature dependence of energy gap was given Eg(T)=Eg(O)-aT\ulcorner)B+T), from varshni equation, where Eg(O)=2.34eV, a=8.79x10**-4eV/and b=250K.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
• /
• pp.3-6
• /
• 2004

반도체 디자인, 공정 기술 및 패기지 기술의 발달에 따라 전력용 반도체는 소형화, 고성능화, 지능화하고 있다. 고속 구동이 용이한 때문에 MOSFET이나 IGBT등의 MOS-gate형 전력 반도체의 발전이 두드려지며, trench, charge balance, NPT 기술등이 패키지 기술과 더불어 이를 위한 주요 기술이 될것으로 보인다. SiC나 GaN등의 Wide Band Gap 물질들을 사용한 차세대 전력 반도체 연구도 활발히 진행되고 있다.

• 한국정보통신학회논문지
• /
• 제6권6호
• /
• pp.897-903
• /
• 2002

본 논문에서는 Inset-fed 안테나의 급전구조를 변형하여 기존의 Inset-fed 안테나 보다 그 성능을 향상시킨 안테나를 설계 및 제작하였다. Patch 안테나에서 gap 결합에 의한 급전 방식을 기초로 하여 변형된 급전 방식을 Inset-fed 안테나에 적용하였다. 설계된 안테나는 FDTD에 의한 simulation을 수행하여 최적치를 얻었으며 제작된 안테나는 공진 주파수에서 511은 -l4dB이고 cross polarization level은 -20dB의 특성을 보였다.

• 한국세라믹학회지
• /
• 제43권1호
• /
• pp.22-27
• /
• 2006

The electronic band structures of Metal-doped titanium dioxide, M-doped $TiO_2$ (M=Co, Cr, Fe), have been studied by using XRD, UV-vis diffuse reflectance spectrometer and FP-LAPW (Full-Potential Linearized Augmented-Plane-Wave) method. The UV-vis of M-doped $TiO_2$ (M=Co, Cr, Fe) showed two absorption edges; the main edge due to the titanium dioxide at 387 nm and a shoulder due to the doped metals at around 560 nm. The band gap energies of Co, Cr and Fe-doped $TiO_2$ calculated by FP-LAPW method were 2.6, 2.0, and 2.5 eV, respectively. The theoretically calculated band gap energy of $TiO_2$ by using FP-LAPW method was the same as experimental results. FP-LAPW method will be useful for fabrication and development of photo catalysts working under visible light.

• Applied Science and Convergence Technology
• /
• 제23권5호
• /
• pp.201-210
• /
• 2014

The influence of electron irradiation and hydrogen adsorption on the electronic structure of the $SrTiO_3$ (001) surface was investigated by ultraviolet photoemission spectroscopy (UPS). Upon electron irradiation of the surface, UPS revealed an electronic state within the band gap (in-gap state: IGS) with the surface kept at $1{\times}1$. This is considered to originate from oxygen vacancies at the topmost surface formed by electron-stimulated desorption of oxygen. Electron irradiation also caused a downward shift of the valence band maximum indicating downward band-bending and formation of a conductive layer on the surface. With oxygen dosage on the electron-irradiated surface, on the other hand, the IGS intensity was decreased along with upward band-bending, which points to disappearance of the conductive layer. The results indicate that electron irradiation and oxygen dosage allow us to control the surface electronic structure between semiconducting (nearly-vacancy free: NVF) and metallic (oxygen de cient: OD) regimes by changing the density of the oxygen vacancy. When the NVF surface was exposed to atomic hydrogen, in-gap states were induced along with downward band bending. The hydrogen saturation coverage was evaluated to be $3.1{\pm}0.8{\times}10^{14}cm^{-2}$ with nuclear reaction analysis. From the IGS intensity and H coverage, we argue that H is positively charged as $H^{{\sim}0:3+}$ on the NVF surface. On the OD surface, on the other hand, the IGS intensity due to oxygen vacancies was found to decrease to half the initial value with molecular hydrogen dosage. H is expected to be negatively charged as $H^-$ on the OD surface by occupying the oxygen vacancy site.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
• /
• pp.305-305
• /
• 2013

태양전지는 무기태양전지와 유기태양전지 등이 연구 되고 있는데 [1] 그 중 유기물질의 장점(높은 수율, solution phase processing, 저비용으로 전력 생산)과 무기재료의 장점(높은 전자 이동도, 넓은 흡수 범위, 우수한 환경 및 열 안정성)을 융합함으로써 장기적 구조안정성의 확보와 광전변환의 고 효율화를 동시에 달성하기 위한 유기무기 하이브리드 태양전지가 최근 큰 관심을 끌고 있다[2]. 본 연구에서는 hybrid photovoltaics에 유기물 MDMO-PPV와 전도성 고분자 PEDOT:PSS를 무기물 GaN 위에 spin coating 하여 두께에 다른 효율을 측정하였다. 유기물 MDMO-PPV는 p-형으로 클로로벤젠, 톨루엔과 같은 유기 용매에 잘 녹으며 HOMO 5.33eV, LUMO 2.97eV, energy band gap 2.4eV이며 99.5%의 순도 물질을 사용하였다. 또한 정공 수송층(hole transport layer, HTL)으로 PEDOT:PSS를 사용하였으며, HOMO 5.0eV, LUMO 3.6eV, energy band gap 1.4eV를 가지며 증류수나 에탄올과 같은 수용성 용매에 잘 녹는 특성을 가지고 있다. 무기물은 III-V 족 물질 n-GaN(002)을 사용하였고 valence band energy 1.9eV, conduction band energy 6.3eV, energy band gap 3.4eV, 높은 전자 이동도와 높은 포화 속도, 광전자 소자에 유리한 광 전기적 특성을 가지고 있다. 기판으로는 GaN와 격자 부정합도와 열팽창계수 부정합도가 큰 Sapphire (Al2O3) 이종 기판을 사용하였다. 전극으로 Au를 사용하였으며 E-beam증착하였다. Reflector로서 Al를 thermal evaporator로 증착하였다 [3]. 실험 과정은 두께에 따른 효율을 알아보기 위해 MDMO-PPV를 900~1,500 rpm으로 spin coating 하였고, 열처리에 따른 효율을 알아보기 위해 열처리 온도 조건을 $110{\sim}170^{\circ}C$의 변화를 주었다. FE-SEM으로 표면과 단면을 관찰하였으며 J-V 특성을 알아보기 위해 각 샘플마다 solar simulator를 사용하여 측정하였고 그 결과를 논의하였다.

• 한국전산구조공학회논문집
• /
• 제32권4호
• /
• pp.241-247
• /
• 2019

밴드갭은 기계적 파동의 전파가 금지되는 특정 주파수 범위를 의미한다. 본 연구는 경사도 기반의 설계 최적화 방법을 사용하여 낮은 가청 주파수 범위에서 밴드갭을 갖는 3차원 켈빈 격자를 설계하는 것을 목적으로 하고 있다. 블로흐 이론을 이용하여 무한주기 격자에서의 탄성파 전파를 해석하고, 기하학적으로 엄밀한 빔 이론에서 선형화를 통해 얻은 전단 변형 가능한 빔 모델을 사용하여 격자 구조 연결선을 모델링하였다. 주어진 격자 구성에서 중립 축 및 단면 두께를 B-spline 함수를 이용한 아이소-지오메트릭 매개화를 통해 설계 변수로 정의하고, 격자 구조의 밴드갭의 크기를 극대화하는 최적 설계를 수행하였다.