• Journal of Sensor Science and Technology
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• v.5 no.5
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• pp.1-10
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• 1996

Solar cells made of the edge-defined film-fed growth Si are characterized using current-voltage, surface photovoltage, electron beam induced current, electron microprobe, scanning electron microscopy, and electron backscattering. The weak temperature dependence of the I-V curves in the EFG solar cells is due to a voltage variable shunt resistance giving higher diode ideality factors than the ideal one. The voltage variable shunt resistance is modeled by a modified recombination mechanism which includes carrier tunneling to distributed impurity energy states in the band gap within the space-charge region. The junction integrity and the substrate quality are characterized simultaneously by combining I-V and surface photovoltage (SPV) measurements. The diode ideality factors and the surface photovoltages characterize the junction integrity while the SPV diffusion lengths characterizes the substrate quality. Most of the measured samples show the voltage variable shunt resistance although how serious it is depends on the solar cell efficiency. The voltage variable shunt resistance is understood as one of the most important factors of the degradation of EFG solar cells.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2004.05a
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• pp.53-56
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• 2004

The a-Si:H TFT using ferroelectric of SrTi $O_3$as a gate insulator is fabricated on glass. Dielectric characteristics of ferroelectric are superior to $SiO_2$and S $i_3$ $N_4$. Ferroelctric increases on-current, decreases thresh old voltage of TFT and also improves breakdown characteristics. The a-SiN:H has optical band gap of 2.61 eV, refractive index of 1.8~2.0 and resistivity of 10$^{13}$ - 10$^{15}$ $\Omega$cm, respectively. Insulating characteristics of ferroelectrics are excellent because dielectric constant of ferroelectric is about 60~100 and breakdown strength is over 1MV/cm. TFT using ferroelectric has channel length of 8~20${\mu}{\textrm}{m}$ and channel width of 80~200${\mu}{\textrm}{m}$. And it shows that drain current is 3.4$mutextrm{A}$ at 20 gate voltage, $I_{on}$ / $I_{off}$ is a ratio of 10$^{5}$ - 10$^{8}$ and $V_{th}$ is 4~5 volts, respectively. In the case of TFT without ferroelectric, it indicates that the drain current is 1.5 $mutextrm{A}$ at 20 gate voltage and $V_{th}$ is 5~6 volts. With the improvement of the ferroelectric thin film properties, the performance of TFT using this ferroelectric has advanced as a gate insulator fabrication technology is realized.zed.d.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.9
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• pp.546-551
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• 2016

$SrSnO_3:Tb^{3+}$ phosphor thin films were prepared on sapphire and quartz substrates in the growth temperature range of $100{\sim}400^{\circ}C$ by using the radio frequency magnetron sputtering deposition. The resulting $SrSnO_3:Tb^{3+}$ thin films were characterized by X-ray diffraction, scanning electron microscopy, ultraviolet-visible-infrared spectrophotometer, and photoluminescence spectrometer. The results indicated that the morphology, optical transmittance, band gap energy, and luminescence intensity of the phosphor thin films significantly depended on the growth temperature. All the thin films, regardless of the type of substrate, showed an amorphous behavior. As for the thin films deposited on sapphire substrate, the maximum crystallite size was obtained at a growth temperature of $400^{\circ}C$ and the strongest emission was green at 544 nm arising from the $^5D_4{\rightarrow}^7F_5$ transition of Tb3+. The average optical transmittance for all the thin films grown on sapphire and quartz substrates was decreased as the growth temperature increased from 100 to $400^{\circ}C$. The results suggest that the optimum growth temperatures for depositing highly-luminescent $SrSnO_3:Tb^{3+}$ phosphor thin films on sapphire and quartz substrates are 400 and $300^{\circ}C$, respectively.

• Journal of the Korea Convergence Society
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• v.12 no.2
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• pp.29-34
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• 2021

In this paper, a cylindrical photonic crystal waveguide with a low-index core is first proposed. The core can be filled with air, liquid, or arbitrary dielectric materials. Exact analyses for the electromagnetic field characteristics of guided modes, by using appropriate Bessel functions and applying the boundary conditions, are performed to find out the guiding characteristics of the proposed waveguide. For verification and usage in design and manufacturing process, the computer-calculation of the waveguide transmission characteristics is also performed by applying the rigorous full-vectorial finite difference method. Providing variations of the effective area for the fundamental mode of the designed waveguide with different numbers of cladding layers, ranging from 2.6056 ㎛2 to 5.9673 ㎛2 over the operation wavelength, generally as the core refractive index n1 is higher, the mode area becomes smaller and the result leads to more optimistic effect for nonlinear device applications.

• Journal of radiological science and technology
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• v.43 no.6
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• pp.481-487
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• 2020

Radiation measurement technology has steadily improved and its usage is expanding in various industries such as nuclear medicine, security search, satellite, nondestructive testing, environmental industries and the domain of nuclear power plants (NPPs). Especially, the simultaneous measurements of gamma rays and neutrons can be even more critical for nuclear safety management of spent nuclear fuel and monitoring of the nuclear material. A semiconductor detector comprising cadmium, zinc, and tellurium (CZT) enables to detect gamma-rays due to the significant atomic weight of the elements via immediate neutron and gamma-ray detection. Semiconductor sensors might be used for nuclear safety management by monitoring nuclear materials and spent nuclear fuel with high spatial resolution as well as providing real-time measurements. We aim to introduce a portable nuclide-analysis device that enables the simultaneous measurements of neutrons and gamma rays using a CZT sensor. The detector has a high density and wide energy band gap, and thus exhibits highly sensitive physical characteristics and characteristics are required for performing neutron and gamma-ray detection. Portable nuclide-analysis device is used on NPP-decommissioning sites or the purpose of nuclear nonproliferation, it will rapidly detect the nuclear material and provide radioactive-material information. Eventually, portable nuclide-analysis device can reduce measurement time and economic costs by providing a basis for rational decision making.

• Nuclear Engineering and Technology
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• v.54 no.3
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• pp.1062-1070
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• 2022

In the present communication, pure and stable α-Bismuth Oxide (Bi₂O₃) nanoparticles (NPs) were synthesized by low temperature solution combustion method using urea as a fuel and calcined at 500℃. The synthesized sample was characterized by using powder X-ray Diffraction (PXRD), Scanning Electron Microscopy (SEM), Energy dispersive X-ray analysis (EDAX), Transmission Electron Microscopy (TEM), Fourier Transform Infrared Spectroscopy (FTIR) and UV-Visible absorption spectroscopy. The PXRD pattern confirms the formation of mono-clinic, stable and low temperature phase α-Bi₂O₃. The direct optical energy band gap was estimated by using Wood and Tauc's relation which was found to be 2.81 eV. The characterized sample was studied for X-ray/gamma ray shielding properties in the energy range 0.081-1.332 MeV using NaI (Tl) detector and multi channel analyzer (MCA). The measured shielding parameters agrees well with the theory, whereas, slight deviation up to 20% is observed below 356 keV. This deviation is mainly due to the influence of atomic size of the target medium. Furthermore an accurate theory is necessary to explain the interaction of X-ray/gamma ray with the NPs.The present work opens new window to use this facile, economical, efficient, low temperature method to synthesize nanomaterials for X-ray/gamma ray shielding purpose.

• Nuclear Engineering and Technology
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• v.54 no.12
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• pp.4708-4714
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• 2022

The novelty in the present search, the Soda-Lime-Silica (SLS) glass waste to prepare free lead glass shielding was used in order to limit the accumulation of glass waste, which requires extensive time to decompose. This also saves on the consumption of pure SiO₂, which is a finite resource. Furthermore, the combining of BaO with Bi₂O₃ into a glass network leads to increased optical properties and improved attenuation. The UV-Visible Spectrophotometer was used to investigate the optical properties and the radiation shielding properties were reported for current glass samples utilizing the PhysX/PDS online software. The optical property results indicate that when BaO content increases in glass structure, the Urbach energy ΔE, and refractive index n increases while the energy optical band gap E_opt decreases. The result of the metallisation criteria (M) revealed that the present glass samples are nonmetallic (insulators). Furthermore, the radiation shielding parameter findings suggest that when BaO was increased in the glass structure, the linear attenuation coefficient and effective atomic number (Z_eff) rose. But the half-value layer HVL declined as the BaO concentration grew. According to the research, the glass samples are non-toxic, transparent to visible light, and efficient radiation shielding materials. The Ba5 sample is considered the best among all the samples due to its higher attenuation value and lower HVL and MFP values, which make it a suitable candidate as transparent glass shield shielding.

• Current Photovoltaic Research
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• v.11 no.2
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• pp.39-43
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• 2023

Carrier-selective contacts (CSCs) solar cells are considerably attractive on highly efficient crystalline silicon heterojunction (SHJ) solar cells due to their advantages of high thermal tolerance and the simple fabrication process. CSCs solar cells require a hole selective contact (HSC) layer that selectively collects only holes. In order to selectively collect holes, it must have a work function characteristic of 5.0 eV or more when contacted with n-type Si. The VO_x, NiO_x, and CuI_x thin films were fabricated and analyzed respectively to confirm their potential usage as a hole-selective contact (HSC) layer. All thin films showed characteristics of band-gap engergy > 3.0 eV, work function > 5.0 eV and minority carrier lifetime > 1.5 ms.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.6
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• pp.582-587
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• 2023

The effects of the annealing temperature on the structural, morphological, and luminescent properties of SrWO₄:Sm³⁺ thin films grown on quartz substrates by radio-frequency magnetron sputtering were investigated. The thin films were annealed at various annealing temperatures for 20 min in a rapid thermal annealer after growing the thin films. The experimental results showed that the annealing temperature has a significant effect on the properties of the SrWO₄:Sm³⁺ thin films. The crystal structure of the as-grown SrWO₄:Sm³⁺ thin films was transformed from amorphous to crystalline after annealing at 800℃. The preferred orientation along (112) plane and a significant increase in average grain size by 820 nm were observed with increasing the annealing temperature. The average optical transmittance in the wavelength range of 500~1,100 nm was decreased from 72.0% at 800℃ to 44.2% at an annealing temperature of 1,000℃, where the highest value in the photoluminescence intensity was obtained. In addition to the red-shift of absorption edge, a higher annealing temperature caused the optical band gap energy of the SrWO₄:Sm³⁺ thin films to fall rapidly. These results suggest that the structural, morphological, and luminescent properties of SrWO₄:Sm³⁺ thin films can be controlled by varying annealing temperature.

• The Journal of the Korea institute of electronic communication sciences
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• v.18 no.6
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• pp.1067-1072
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• 2023

We prepared AZO (Al₂O₃ : 3 wt %) thin films according to the substrate temperature using the pulsed laser deposition method and the structural, electrical, and optical properties of the thin films were investigated. The AZO thin film deposited at 400℃ showed the best (002) orientation and the FWHM was 0.38°. As a result of the investigation of electrical properties, it was confirmed that the carrier concentration and mobility increased and the resistivity decreased as the substrate temperature increased. The average transmittance in the visible light region showed a high value of 85% or more regardless of the substrate temperature. The Burstein-Moss effect, in which the carrier concentration would increase with increasing substrate temperature thereby widening the energy band gap, was also observed. The resistivity and the figure of merit of the AZO thin film deposited at a substrate temperature of 400℃ were 6.77 × 10^-4 Ω·cm and 1.02 × 10⁴ Ω^-1·cm^-1 respectively, showing the best value.