• The Transactions of The Korean Institute of Electrical Engineers
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• v.68 no.1
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• pp.77-82
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• 2019

In this paper, a 0.6~6GHz quad-ridge horn antenna which can be used for the antenna measurement of 5.8GHz WiFi system from lowest frequency band of mobile LTE (Long Term Evolution) is designed and implemented. The quad-ridge horn antenna has quadruple ridges of exponential function, a back-short and a cavity. Based on this structure, we design the cavity size, ridge gap and feed gap to have broadband characteristics. For implementation, the plates material of aluminum and copper are used for the horn and four ridges, respectively. And the insulator supports are used to maintain the gap between ridges. By measurement, antenna has the gain of 6.2~13.35dBi with the return loss of less than -6dB (under VSWR 3 : 1) in the entire design band. The results of this study can be widely used to the antenna studies on the mobile communication including low frequency band of LTE, the EMI measurement and the standard calibration measurement.

• Journal of the Korean Vacuum Society
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• v.8 no.3B
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• pp.290-296
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• 1999

We have studied the phase separation and ordering phenomeon of InAlAs epilayers grown on InP substrate by LP-MOCVD with DCXRD, PL, and TEM. From the intensity and FWHM of DCXRD and PL, we observed that the structural and optical quality of InAlAs epilayers were improved as growth temperature increased. The band-gap reduction due to phase separation and ordering is 291, 246, and 28 meV in the InAlAs epilayers grown at $565^{\circ}C$, $615^{\circ}C$, and $700^{\circ}C$, respectively, and shows the same from the InAlAs epilayer town at 5$65^{\circ}C$ in which the HRTEM micrograph showed the lattice fringe between InAs-rich and AlAs-rich regions was tilted by $2^{\circ}$ due to composition difference. However the maximum degree of ordering by intensity of extra spots was obtained at medium growth temperature. The annealing experiment by RTA of sample grown at $565^{\circ}$ shows a maximum band-gap shift of 78eV at $880^{\circ}$ for 3 min, and TEM shows that the origin of the blue shift of band-gap is the complete disappearance of ordering. Through annealing we can conclude that short time annealing affects only ordering and that most of the total band-gap reduction (~3/4) occurs by phase separation.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.347-347
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• 2012

Nickel Oxide (NiO) is a transition metal oxide of the rock salt structure that has a wide band gap of 3.5 eV. It has a variety of specialized applications due to its excellent chemical stability, optical, electrical and magnetic properties. In this study, we concentrated on the application of NiO thin film for transparent conducting oxide. The energy band structure, electronic and optical properties of Nickel Oxide (NiO) thin films grown on Si by using electron beam evaporation were investigated by X-Ray Photoelectron Spectroscopy (XPS), Reflection Electron Energy Loss Spectroscopy (REELS), and UV-Spectrometer. The band gap of NiO thin films determined by REELS spectra was 3.53 eV for the primary energies of 1.5 keV. The valence-band offset (VBO) of NiO thin films investigated by XPS was 3.88 eV and the conduction-band offset (CBO) was 1.59 eV. The UV-spectra analysis showed that the optical transmittance of the NiO thin film was 84% in the visible light region within an error of ${\pm}1%$ and the optical band gap for indirect band gap was 3.53 eV which is well agreement with estimated by REELS. The dielectric function was determined using the REELS spectra in conjunction with the Quantitative Analysis of Electron Energy Loss Spectra (QUEELS)-${\varepsilon}({\kappa},{\omega})$-REELS software. The Energy Loss Function (ELF) appeared at 4.8, 8.2, 22.5, 38.6, and 67.0 eV. The results are in good agreement with the previous study [1]. The transmission coefficient of NiO thin films calculated by QUEELS-REELS was 85% in the visible region, we confirmed that the optical transmittance values obtained with UV-Spectrometer is the same as that of estimated from QUEELS-${\varepsilon}({\kappa},{\omega})$-REELS within uncertainty. The inelastic mean free path (IMFP) estimated from QUEELS-${\varepsilon}({\kappa},{\omega})$-REELS is consistent with the IMFP values determined by the Tanuma-Powell Penn (TPP2M) formula [2]. Our results showed that the IMFP of NiO thin films was increased with increasing primary energies. The quantitative analysis of REELS provides us with a straightforward way to determine the electronic and optical properties of transparent thin film materials.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.6 no.6
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• pp.897-903
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• 2002

In this paper, a modified feeding structure for microstrip patch antenna is suggested for improving the performances. The proposed antenna has a gap between the transmission line and the recessed part of the radiating patch which makes a capacitive coupling. It shows higher 511(-l4dB) and lower cross polarization level(-2OdB) compare with the conventional inset ftd patch antenna while having a similar characteristics in another evaluating items. Experimental results are examined and considered to apply to the S-Band application, and the effectiveness has been confirmed by FDTD simulation and measurement simultaneously.

• Korean Journal of Materials Research
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• v.33 no.5
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• pp.189-194
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• 2023

This study uses first-principles calculations to investigate the mechanical properties and effect of strain on the electronic properties of the 2D material 1H-PbX₂ (X: S, Se). Firstly, the stability of the 1H Pb-dichalcogenide structures was evaluated using Born's criteria. The obtained results show that the 1H-PbS₂ material possesses the greatest ideal strength of 3.48 N/m, with 3.68 N/m for 1H-PbSe₂ in biaxial strain. In addition, 1H-PbS₂ and 1H-PbSe₂ are direct semiconductors at equilibrium with band gaps of 2.30 eV and 1.90 eV, respectively. The band gap was investigated and remained almost unchanged under the strain ε_xx but altered significantly at strains ε_yy and ε_bia. At the fracture strain in the biaxial direction (19 %), the band gap of 1H-PbS₂ decreases about 60 %, and that of 1H-PbSe₂ decreases about 50 %. 1H-PbS₂ and 1H-PbSe₂ can convert from direct to indirect semiconductor under the strain ε_yy. Our findings reveal that the two structures have significant potential for application in nanoelectronic devices.

• Ceramist
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• v.22 no.1
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• pp.27-35
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• 2019

Research on ultraviolet (UV) light detection has attracted considerable attention from scientific researchers in related fields. It can be said that it is a very important time to accurately monitor the UV irradiation amount according to the wavelength region in real time. The oxide is very diverse in its kind and has the advantage of being able to efficiently control the band gap through band gap engineering. In addition, it is very stable in response to heat and atmospheric oxygen when UV is absorbed. Also, there is a known method that can effectively manufacture oxide nanoparticles and nanorods through various synthesis methods, and researches for improving the sensitivity of UV sensors have been carried out using this method. In this paper, we introduce the materials that can be used as UV sensors among various wide band oxide materials, and review the results of researches of various UV sensors using nano materials.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.75-75
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• 2009

반도체 및 전자기기 산업에 있어 비활성메모리 (NVM)는 중요한 부운을 차지한다. NVM은 디스플레이 분야에 많은 기여를 하고 있으며, 특히 AMOLED에 적용이 가능하여 온도에 따라 변하는 구동 전류, 휘도, color balance에 따른 문제를 해결하는데 큰 역할을 한다. 본 연구는 NNN 구조에서 터널 층을 $SiN_X$ 박막에서 $SiO_XN_Y$ 박막으로 대체하기위한 $SiO_XN_Y$ 박막을 이용한 NNO구조의 NVM에 관한 연구이다. 이로 인하여 보다 얇으면서 우수한 절연 특성을 가지는 박막을 사용함으로써 실리콘 층으로부터 전하의 터널링 효과를 높여 전하 저장 정도를 높이고, 메모리 retention 특성을 향상시키는 터널 박막을 성장 시킬 수 있다. 최적의 NNO 구조의 메모리 소자를 제작하기 위하여 MIS 상태로 다양한 조건의 실험을 진행하였다. 처음으로 블로킹 박막의 두께를 조절하는 실험을 진행하여 최적 두께의 블로킹 박막을 찾았으며, 다음으로 전하 저장 박막의 band gap을 조절하여 최적의 band gap을 갖는 $SiN_X$ 박막을 찾았다. 마지막으로 최적두께의 $SiO_XN_Y$박막을 찾는 실험을 진행하였다. MIS 상태에서의 최적의 NNO 구조를 이용하여 유리 기판 상에 NNO 구조의 NVM 소자를 제작하였다. 제작된 메모리 소자는 문턱전압이 -1.48 V로 낮은 구동전압을 보였으며, I-V의 slope 값 역시 약 0.3 V/decade로 낮은 값을 보인다. 전류 점멸비($I_{ON}/I_{OFF}$)는 약 $5\times10^6$로 무수하였다. $SiN_X$의 band gap을 다양하게 조절하여 band gap 차이에 의한 밴드 저장 방식을 사용하였다. 또한 $SiN_X$은 전하를 전하 포획(trap) 방식으로 저장하기 때문에 본 연구에서의 메모리 소자는 밴드 저장 방식과 전하 포획 방식을 동시에 사용하여 우수한 메모리 특성을 갖게 될 것으로 기대된다. 우수한 비휘발성 메모리 소자를 제작하기 위해 메모리 특성에 많은 영향을 주는 터널 박막과 전하 저장 층을 다양화하여 소자를 제작하였다. 터널 박막은 터널링이 일어나기 쉽도록 최대한 얇으며, 전하 저장 층으로부터 기판으로 전하가 쉽게 빠져나오지 못하도록 절연 특성이 우수한 박막을 사용하였다. 전하 저장 층은 band gap이 작으며 trap 공간이 많은 박막을 사용하였다.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.11 no.4
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• pp.599-609
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• 2000

In this paper, sub-harmonically pumped single balanced resistive mixers are presented . Frequency bandwidth is selected for a Ku-band, which is 11.75-12.25GHz for RF, 5.375∼5.625 GHz for LO, and 1 GHz for IF signals. A rat-race hybrid is designed for the accomplishment of single balanced type. A low pass filter (LPF) with photonic band gap(PBG) structure is used for good conversion loss and unwanted harmonics suppression. Two types of mixers are suggested, which are one with no gate bias for no DC power consumption and the other with the IF amplifier for conversion gain. When a LO signal with the power of 6 dBm at 5.5 GHz is injected, a conversion loss of 12.17dB and a conversion gain of 7.83 dB are obtained for each mixer. For the both mixers , LO to RF isolation of 20 dB and LO to IF isolation of 60dB are obtained. With the RF power of -30dBm to -3dBm, the mixer shows linear characteristics region of IF. this mixer can be applied for Ku-band and other microwave communication systems.

• New & Renewable Energy
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• v.3 no.4
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• pp.54-62
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• 2007

In this paper, we report the research highlight on the preparation and characterization of Indium-free $Cu_2ZnSnSe_4$ and Indium-reduced $CulnZnSe_2$ thin films in order to seek the viability of these absorber materials to be applied in thin film solar cells. The films of $Cu_2ZnSnSe_4\;and\;CulnZnSe_2$ were prepared using mixed binary chalcogenides powders. It was observed that Cu concentration was a function of substrate temperature as well as CuSe mole ratio in the target. Under an optimized condition, $Cu_2ZnSnSe_4\;and\;CulnZnSe_2$ thin films grew with strong [112]. [220/204] and [312/116] reflections. Both $Cu_2ZnSnSe_4\;and\;CulnZnSe_2$ films were found to exhibit a high absorption coefficient of $104^4cm^{-1}\;Cu_2ZnSnSe_4$ film showed a band gap of 1.5eV which closes to the optimum band gap of an ideal solar absorber for a solar cell. On the other side, an increase of optical band gap from 1.0 to 1.25eV was found to be proportional with an increase of Zn concentration in the $CulnZnSe_2$ film. All films in this study revealed a p-type semiconductor characteristic.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.10
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• pp.2247-2252
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• 2012

In this paper, we produced CIGS thin film by co-evaporation method. During the process, substrate temperature and Ga/(In+Ga) composition ratio was altered to observe the change of resistivity and absorbance spectra measurements. As substrate temperature increased, resistivity decreased and as Ga/(In+Ga) composition ratio increased from 0.30 to 0.72, band gap also increased with the range of 1.26eV, 1.30eV, 1.43eV, 1.47eV. With the constant condition of composition ratio, resistivity decreased with increased thickness of the thin film. On this experiment, we assumed that optical absorbance ratio and optical current will be increased with CIGS thin film fabrication.