• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.252.1-252.1
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• 2013

Hexagonal boron nitride (h-BN) is a two dimensional material which has high band-gap, flatness and inert properties. This properties are used various applications such as dielectric for electronic device, protective coating and ultra violet emitter so on. 1) In this report, we were growing h-BN sheet directly on sapphire 2"wafer. Ammonia borane (H3BNH3) and nickel were deposited on sapphire wafer by evaporate method. We used nickel film as a sub catalyst to make h-BN sheet growth. 2) During annealing process, ammonia borane moved to sapphire surface through the nickel grain boundary. 3) Synthesized h-BN sheet was confirmed by raman spectroscopy (FWHM: ~30cm-1) and layered structure was defined by cross TEM (~10 layer). Also we controlled number of layer by using of different nickel and ammonia borane thickness. This nickel film supported h-BN growth method may propose fully and directly growing on sapphire. And using deposited ammonia borane and nickel films is scalable and controllable the thickness for h-BN layer number controlling.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.413-413
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• 2012

Lead sulfide (PbS) Colloidal quantum dots (CQDs) are promising material for the photovoltaic device due to its various outstanding properties such as tunable band-gap, solution processability, and infrared absorption. More importantly, PbS CQDs have large exciton Bohr radius of 20 nm due to the uniquely large dielectric constants that result in the strong quantum confinement. To exploit desirable properties in photovoltaic device, it is essential to fabricate a device exhibiting stable performance. Unfortunately, the performance of PbS NQDs based Schottky solar cell is considerably degraded according to the exposure in the air. The air-exposed degradation originates on the oxidation of interface between PbS NQDS layer and metal electrode. Therefore, it is necessary to enhance the stability of Schottky junction device by inserting a passivation layer. We investigate the effect of insertion of passivation layer on the performance of Schottky junction solar cells using PbS NQDs with band-gap of 1.3 eV. Schottky solar cell is the simple photovoltaic device with junction between semiconducting layer and metal electrode which a significant built-in-potential is established due to the workfunction difference between two materials. Although the device without passivation layer significantly degraded in several hours, considerable enhancement of stability can be obtained by inserting the very thin LiF layer (<1 nm) as a passivation layer. In this study, LiF layer is inserted between PbS NQDs layer and metal as an interface passivation layer. From the results, we can conclude that employment of very thin LiF layer is effective to enhance the stability of Schottky junction solar cells. We believe that this passivation layer is applicable not only to the PbS NQDs based solar cell, but also the various NQDs materials in order to enhance the stability of the device.

• 전기전자학회논문지
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• 제27권1호
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• pp.19-24
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• 2023

약 1.12 ev의 밴드갭 에너지를 갖는 실리콘은 동작 온도가 250 ℃ 이하로 제한되어, 밴드갭 에너지가 큰 SiC 기판을 이용한 MIS(metal-insulator-semiconductor) 구조의 시료를 제작하여 고온에서 수소 응답 특성을 고찰하였다. 적용된 유전체 박막은 수소가스에 대해 침투성이 강하고 고온에서 안정성을 보이는 탄탈륨 산화막(Ta₂O₅)으로, 스퍼터링으로 증착된 탄탈륨(Ta)을 900 ℃의 온도에서 급속열산화법(RTO)으로 형성하였다. 이렇게 형성된 탄탈륨 산화막은 TEM, SIMS, 및 누설전류 측정을 통해, 두께, 원소들의 깊이 분포 및 절연특성을 분석하였다. 수소가스 응답특성은 0부터 2,000 ppm의 수소가스 농도에 대해, 상온으로부터 200와 400 ℃의 온도에서 정전용량의 변화로 평가하였다. 그 결과, 시료로부터 감도가 우수하고, 약 60초의 응답 시간을 나타내는 특성을 확인하였다.

• 대한전자공학회논문지TC
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• 제43권6호
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• pp.46-52
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• 2006

본 논문에서는 70-nm metamorphic high electron mobility transistor (MHEMT)와 W-band 마이크로 머시닝 링 커플러를 이용하여 낮은 변환손실 및 높은 격리특성의 94 GHz MMIC 믹서를 설계 및 제작하였다. 놀은 LO-RF 격리도 특성을 얻기 위하여 마이크로 머시닝 링 커플러를 사용한 새로운 3차원 구조의 resistive 믹서 구조를 제안하였다. 제작된 93 GHz MMIC 믹서는 94 GHz에서 8.9 dB의 낮은 변환 손실과 29.3 dB의 높은 LO-RF 격리돈 특성을 나타내었다. 본 논문에서 제안된 믹서는 기존의 보고된 W-band 대역 믹서와 비교하여 양호한 변환 손실 뿐 만 아니라 우수한 LO-RF 격리도 특성을 나타내었다.

• 한국진공학회지
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• 제10권4호
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• pp.416-423
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• 2001

$SrTiO_3$ 박막의 미세구조와 광학적 및 유전적 특성에 대한 열처리 효과들이 조사되었다. $SrTiO_3$ 박막은 RF-마그네트론 스퍼터링 방법에 의하여 상온의 ITO유리 위에 성장되었으며, 성장된 박막들은 산소 분위기의 여러 온도에서 열처리되었다. X선 회절 패턴을 분석한 결과 상온에서 제작된 as-deposited박막은 비정질 상태로 나타났으며, 450-$600^{\circ}C$에서 열처리한 시료에서는 pyrochlore 구조의 결정 피크들이 우세하게 관측되었다. 그리고 $650^{\circ}C$에서 열처리한 시료에서는 perovskite 구조가 우세하게 나타나는 것이 관측되었다. 특히 $650^{\circ}C$에서 열처리한 시료의 경우는 박막의 미세 결정구조 변화와 더불어 광학적 띠간격이 크게 변하는 것이 광투과도 측정으로부터 관측되었다. 그리고 $600^{\circ}C$에서 열처리된 시료의 경우는 $272^{\circ}C$에서 상전이 피크가 관측되는 반면, $650^{\circ}C$에서 열처리된 시료에서는 $310^{\circ}C$ 부근에서 유전 분산이 관측되었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.382-382
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• 2010

$TaO_2$ thin films as gate dielectrics have been proposed to overcome the problems of tunneling current and degradation mobility in achieving a thin equivalent oxide thickness. An extremely thin $SiO_2$ layer is used in order to separate the carrier in MOSFETchannel from the dielectric field fluctuation caused by phonons in the dielectric which decreases the carrier mobility. The electronic and optical properties influenced the device performance to a great extent. The atomic structure of amorphous and crystalline Tantalum oxide ($TaO_2$) gate dielectrics thin film on Si (100) were grown by utilizing atomic layer deposition method was examined using Ta-K edge x-ray absorption spectroscopy. By using X-ray photoelectron spectroscopy and reflection electron energy loss spectroscopy (REELS) the electronic and optical properties was obtained. In this study, the band gap (3.400.1 eV) and the optical properties of $TaO_2$ thin films were obtained from the experimental inelastic scattering cross section of reflection electron energy loss spectroscopy (REELS) spectra. EXAFS spectra show that the ordered bonding of Ta-Ta for c-$TaO_2$ which is not for c-$TaO_2$ thin film. The optical properties' e.g., index refractive (n), extinction coefficient (k) and dielectric function ($\varepsilon$) were obtained from REELS spectra by using QUEELS-$\varepsilon$(k, $\omega$)-REELS software shows good agreement with other results. The energy-dependent behaviors of reflection, absorption or transparency in $TaO_2$ thin films also have been determined from the optical properties.

• 대한금속재료학회지
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• 제50권4호
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• pp.331-337
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• 2012

Electrical properties as a function of composition in silicon nitride ($SiN_x$) films grown at low temperatures ($<200^{\circ}C$) were studied for applications to photonic devices and thin film transistors. Both silicon-rich and nitrogen-rich compositions were successfully produced in final films by controlling the source gas mixing ratio, $R=[(N_2\;or\;NH_3)/SiH_4]$, and the RF plasma power. Depending on the film composition, the dielectric and optical properties of $SiN_x$ films varied substantially. Both the resistivity and breakdown field strength showed the maximum value at the stoichiometric composition (N/Si = 1.33), and degraded as the composition deviated to either side. The electrical properties degraded more rapidly when the composition shifted toward the silicon-rich side than toward the nitrogen-rich side. The composition shift from the silicon-rich side to the nitrogen-rich side accompanied the shift in the photoluminescence characteristic peak to a shorter wavelength, indicating an increase in the band gap. As long as the film composition is close to the stoichiometry, the breakdown field strength and the bulk resistivity showed adequate values for use as a gate dielectric layer down to $150^{\circ}C$ of the process temperature.

• 한국인터넷방송통신학회논문지
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• 제15권4호
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• pp.211-215
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• 2015

본 논문은 폴디드 모노폴 구조를 이용하여 무선 HDMI 동글장치의 내장형 안테나를 제안하였다. 제안한 안테나는 2.4GHz와 5.8GHz이다. 안테나는 'F'형 구조를 이용하여 모노폴 폴디드 안테나 길이, 간격, 폭 그리고 반원의 반지름을 파라미터로 정하여 최적화 하였다. 안테나 파라미터 특성을 확인하기 위해 ANSYS사의 HFSS를 이용하였다. 안테나 제작은 유전상수가 4.4인 FR4 유전체 기판을 사용하였다. 안테나의 크기는 HDMI 동글 크기 $45{\times}20{\times}1mm$이고, 안테나 부분은 $5{\times}20mm$이다. 제작된 안테나는 2.4GHz와 5.8GHz에서 반사손실이 -10dB를 만족하였다. 최대 안테나 이득은 -4.13dBi 임을 확인 할 수 있었다. 안테나의 측정결과와 시뮬레이션 결과를 비교하여 분석한 결과, 반원을 이용한 프린티드 폴디드 모노폴 안테나의 실용화 가능성을 확인할 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.280-280
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• 2010

Semiconductor quantum dots are of great interest for both fundamental research and industrial applications due to their unique size dependant properties. The most promising application of colloidal semiconductor nanocrystals (quantum dots or QDs) is probably as emitters in biomedical labeling, LEDs, lasers etc. As compared to II-VI quantum dots, III-V have attracted greater interest owing to their less ionic lattice, larger exciton diameters and reduced toxicity. Among the III-V semiconductor quantum dots, Indium Phosphide (InP) is a popular material due to its bulk band gap of 1.35 (eV) which is responsible for the photoluminescence emission wavelength ranging from blue to near infrared with change in size of QDs. Nevertheless, in recent years, the exact type of collective properties that arise when semiconductor quantum dots (QDs) are assembled into two- or three-dimensional arrays has drawn much interest. The term "uantum dot solids" is used to indicate three-dimensional assemblies of semiconductor QDs. The optoelectronic properties of the quantum dot solids are known to depend on the electronic structure of the individual quantum dot building blocks and on their electronic interactions. This paper reports an efficient and rapid method to produce highly luminescent and monodisperse quantum dots solution and solid through fabrication of InP thin films. By varying the molar concentration of Indium to Ligand, QDs of different size were prepared. The absorption and emission behaviors were also studied. Similar measurements were also performed on InP quantum dot solid by fabricating InP thin films. The optical properties of the thin films are measured at different curing temperatures which show a blue shift with increase in temperature. The dielectric properties of the thin films were also investigated by Capacitance-voltage(C-V) measurements in a metal-insulator-semiconductor (MIS) device.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.630-630
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• 2013

Recently, atomically smooth hexagonal boron nitride(h-BN) known as a white graphene has drawn great attention since the discovery of graphene. h-BN is a III-V compound and has a honeycomb structure very similar to graphene with smaller lattice mismatch. Because of strong covalent sp2bonds like graphene, h-BN provides a high thermal conductivity and mechanical strength as well as chemical stability of h-BN superior to graphene. While graphene has a high electrical conductivity, h-BN has a highly dielectric property as an insulator with optical band gap up to 6eV. Similar to the graphene, h-BN can be applied to a variety of field, such as gate dielectric layers/substrate, ultraviolet emitter, transparent membrane, and protective coatings. However, up until recently, obtaining and controlling good quality monolayer h-BN layers have been too difficult and challenging. In this work, we investigate the controlled synthesis of h-BN layers according to the growth condition, time, temperature, and gas partial pressure. h-BN is obtained by using chemical vapor deposition on Cu foil with ammonia borane (BH3NH3) as a source for h-BN. Scanning Transmission Electron Microscopy (STEM, JEOL-JEM-ARM200F) is used for imaging and structural analysis of h-BN layer. Sample's surface morphology is characterized by Field emission scanning electron microscopy (SEM, JEOL JSM-7100F). h-BN is analyzed by Raman spectroscopy (HORIBA, ARAMIS) and its topographic variations by Atomic force microscopy (AFM, Park Systems XE-100).