• Title/Summary/Keyword: balanced amplifier

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Characteristics Improvement of Power Amplifier for WCDMA Using Doherty Circuit (도허티 회로를 이용한 WCDMA용 전력 증폭기의 특성 개선)

  • Lim, Byoung-Hwan;Park, Sung-Kyo;Oh, Young-Ki;Kim, Kyoung-Min;Park, Chong-Baek
    • Proceedings of the IEEK Conference
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    • 2006.06a
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    • pp.71-72
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    • 2006
  • In this paper, we designed and fabricated the Doherty power amplifier which operates at 2140 MHz by using MRF 21125 RF Power FET (Motorola Co.) and Teflon substrate (${\varepsilon}_r$=2.55, H=0.76 mm, t=$70{\mu}m$, $tan{\delta}$=0.001). As a result, we obtained th improved efficiency and linearity in comparison with the conventional balanced amplifier.

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A Novel Predistorter design using a Balanced Type IM3 Generator (평형 구조 혼변조 발생기를 이용한 전치왜곡 선형화기 설계)

  • 정형태;김상원;김철동;장익수
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.41 no.2
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    • pp.65-70
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    • 2004
  • This paper presents a novel linearization scheme for a nonlinear RF amplifier It is based on the amplitude modulation with envelope signal. The 3rd order distortion generator is composed of two FETs and it adopts a balanced structure for the purpose of main carrier cancellation. The amplitude and phase of the IM3 component can be controlled at RF band. This predistorter is implemented and tested at the KOREA PCS Tx. band (1840∼1870MHz). Experimental results of two-tone test show that the IM3 cancellation is achieved about 30-40 ㏈ for the wide dynamic range. The adjacent channel power ratio is improved by over 10 ㏈ at the broad-band CDMA signal with a peak to average power ratio of l0㏈, and this improvement is maintained through a wide range of output power levels.

Design of High-Power and High-Efficiency Broadband Amplifier for Jamming Using GaN HEMT (GaN HEMT를 이용한 Jamming용 고출력 고효율 광대역 증폭기 설계)

  • Kim, Tae-Hyung;Park, Jung-Hoon;Cho, Sam-Uel;Seo, Chul-Hun
    • Proceedings of the KAIS Fall Conference
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    • 2010.11a
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    • pp.172-175
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    • 2010
  • 본 논문에서는 GaN HEMT를 이용하여 Jamming용 System에 사용될 수 있는 고효율 및 고출력 특성을 가지는 광대역 Amplifier를 제작하였다. Jamming System에서 핵심이 되는 Amplifier는 넓은 범위의 주파수에서 통상적으로 사용되는 출력 신호에 비해 보다 높은 출력의 신호를 구현하는 것이 중요하다. 본 논문에서는 GaN HEMT에 안정적인 전원 공급을 위한 음 전원 Bias 제어 회로와 Sequence 회로 및 온도에 따른 Gain 보상 회로를 구현하였으며, 500~2500MHz의 광대역에서 동작하면서 50W 이상의 출력을 낼 수 있도록 설계하였다. 출력 전력이 향상과 안정적인 동작을 위해 Main 출력 단은 60Watt 급의 GaN HEMT 소자와 광대역 Coupler를 이용하여 Balanced Structure로 설계하였다. 제작된 광대역 Amplifier는 30V 단일 전원에서 동작하도록 설계되었고, 크기는 140*90mm이다. 동작주파수 대역(500~2500MHz)에서 Small Signal Gain 63dB와 Gain Flatness ${\pm}$2dB, -10dB 이하의 Input Return Loss를 가진다. CW(Continuous Wave) Signal을 이용하여 측정하였으며, 50Watt 이상의 Saturation Power에서 최대 45%, 최소 28% 정도의 효율 특성을 보였다.

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AlGaN/GaN Based Ultra-wideband 15-W High-Power Amplifier with Improved Return Loss

  • Jeong, Jin-Cheol;Jang, Dong-Pil;Shin, Dong-Hwan;Yom, In-Bok;Kim, Jae-Duk;Lee, Wang-Youg;Lee, Chang-Hoon
    • ETRI Journal
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    • v.38 no.5
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    • pp.972-980
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    • 2016
  • An ultra-wideband microwave monolithic integrated circuit high-power amplifier with excellent input and output return losses for phased array jammer applications was designed and fabricated using commercial $0.25-{\mu}m$ AlGaN/GaN technology. To improve the wideband performance, resistive matching and a shunt feedback circuit are employed. The input and output return losses were improved through a balanced design using Lange-couplers. This three-stage amplifier can achieve an average saturated output power of 15 W, and power added efficiency of 10% to 28%, in a continuous wave operation over a frequency range of 6 GHz to 18 GHz. The input and output return losses were demonstrated to be lower than -15 dB over a wide frequency range.

Implementation of the 200-Watts SSPA for X-band Pulse Compression Solid State Radar (X-대역 펄스압축 Solid State Radar를 위한 200W SSPA 개발)

  • Kim, Min-Soo;Lee, Chun-Sung;Lee, Sang-Rock;Rhee, Young-Chul
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.46 no.12
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    • pp.22-29
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    • 2009
  • In this paper, we developed the 200-Watts SSPA(Solid State Power Amplifier) for the X-band pulse compression solid state radar. The developed X-band SSPA is consists of 3-stage CSA(Corporate Structured Amplifier) modules in pre-amplifier stage, driver-amplifier stage and main-power amplifier stage. The main-power amplifier stage of SSPA designed by balanced type using GaN HEMT with enough power and gain to generate power more than 200-Watts in X-band. The developed SSPA has performance with more than total gain 59dB and output power 200-Watts in condition of frequency range 9.2-9.6GHz, pulse period 1msec, pulse width 100usec and duty cycle 10%. The developed SSPA in this paper can apply to high quality solid state radar system with pulse compression technique.

Field programmable analog arrays for implementation of generalized nth-order operational transconductance amplifier-C elliptic filters

  • Diab, Maha S.;Mahmoud, Soliman A.
    • ETRI Journal
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    • v.42 no.4
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    • pp.534-548
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    • 2020
  • This study presents a new architecture for a field programmable analog array (FPAA) for use in low-frequency applications, and a generalized circuit realization method for the implementation of nth-order elliptic filters. The proposed designs of both the FPAA and elliptic filters are based on the operational transconductance amplifier (OTA) used in implementing OTA-C filters for biopotential signal processing. The proposed FPAA architecture has a flexible, expandable structure with direct connections between configurable analog blocks (CABs) that eliminates the use of switches. The generalized elliptic filter circuit realization provides a simplified, direct synthetic method for an OTA-C symmetric balanced structure for even/odd-nth-order low-pass filters (LPFs) and notch filters with minimum number of components, using grounded capacitors. The filters are mapped on the FPAA, and both architectures are validated with simulations in LTspice using 90-nm complementary metal-oxide semiconductor (CMOS) technology. Both proposed FPAA and filters generalized synthetic method achieve simple, flexible, low-power designs for implementation of biopotential signal processing systems.

5.25GHz Image Rejection Low Noise Amplifier and Mixer for Wireless LAN (무선랜을 위한 5.25GHz 이미지 제거 저 잡음 증폭기 및 믹서 설계)

  • Lee, Jun-Jae;Kong, Dong-Ho;Choo, Sung-Joong;Park, Jung-Ho
    • Proceedings of the IEEK Conference
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    • 2005.11a
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    • pp.893-896
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    • 2005
  • This paper describes Low Noise Amplifier(LNA) and Single Balanced Mixer(SBM) with monolithic image rejection notch filter using 0.5um MESFET process. LNA, Notch filter, and SBM were integrated on a chip. This chip does not need off chip SAW filter, thereby reducing the overall cost and system volume. The LNA with Notch filter provides a gain of 15dB, noise figure of 1.2dB, and image rejection ratio of -74dB. The SBM has a conversion gain of 6dB.

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Design of a New Balanced Amplifier Using Auxiliary Amplifier (보조증폭기를 이용한 새로운 구조의 평형증폭기 설계)

  • Park, Chun-Seon;Cha, Hyeon-Won;Park, Sun-Ju;Lim, Jong-Sik;Han, Sang-Min;Ahn, Dal
    • Proceedings of the KAIS Fall Conference
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    • 2009.05a
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    • pp.297-299
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    • 2009
  • 이 논문에서는 입력단의 반사전력을 보조증폭기의 입력으로 재활용하여 성능을 향상시킨 새로운 구조의 평형증폭기를 제안한다. 종래의 평형증폭기에서는 입력단 반사파가 터미네이션 처리되었으나, 본 논문의 구조에서는 하이브리드의 격리단자에 연결된 보조증폭기의 입력으로 인가하여 보조증폭기에서 증폭된 신호가 최종출력에서 합쳐져 나타나게 된다. 따라서 기존의 평형증폭기의 출력에 보조증폭기의 출력이 합쳐지게 되므로 본 논문의 평형증폭기 구조는 기존의 평형증폭기 구조에 비하여 전력전력, 전력이득, 효율에서 보다 향상된 결과를 보여준다.

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Miniaturized LNB Downconverter MMIC for Ku-band Satellite Communication System using InGaP/GaAs HBT Process

  • Lee, Jei-Young;Lee, Sang-Hun;Lee, Jong-Chul;Kim, Jong-Heon;Lee, Byunje;Park, Chan-Hyeong;Kim, Nam-Young
    • Journal of electromagnetic engineering and science
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    • v.4 no.1
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    • pp.37-42
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    • 2004
  • In this paper, LNB(low noise block) downconverter MMIC is designed for Ku-band satellite communication system using InGaP/GaAs HBT high linear process. Designed MMIC consists of low noise amplifier, double balanced mixer, and IF amplifier with a total chip area of 2.6${\times}$1.1 $\textrm{mm}^2$. Designed MMIC has the characteristics of over 37.5 ㏈ conversion gain, 14 ㏈ noise figure, ripple of 3 ㏈, and output-referred $P_{1dB}$TEX>(1 ㏈ compression power) of 2.5 ㏈m with total power dissipation of 3 V, 50 mA.

Enhancement in quantum noise correlation between the two outputs of a nondegenerate optical amplifier with a non-vacuum state idler input

  • Kim, Chong-Hoon
    • Journal of the Optical Society of Korea
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    • v.1 no.1
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    • pp.1-4
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    • 1997
  • The theoretical limit of the noise correlation between the signal and idler outputs of a nondegenerate optical parametric amplifier (NOPA) with a coherent state signal and vacuum state idler input can be enhanced if a non-vacuum coherent state idler input is employed. By choosing a balanced signal and idler input, the noise correlation is $1/{({\root}g + {\root}{g-1})}^2$, where g is the intensity gain of the NOPA, and that is superior to the prediced outputs with single signal input by approximately 3dB. The result is applicable to all the schemes that use the NOPA to produce a sub-shot noise light generation such as feed-back or feed-forward control.