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http://dx.doi.org/10.4218/etrij.16.2615.0020

AlGaN/GaN Based Ultra-wideband 15-W High-Power Amplifier with Improved Return Loss  

Jeong, Jin-Cheol (Broadcasting Media Research Laboratory, ETRI)
Jang, Dong-Pil (Broadcasting Media Research Laboratory, ETRI)
Shin, Dong-Hwan (Broadcasting Media Research Laboratory, ETRI)
Yom, In-Bok (Broadcasting Media Research Laboratory, ETRI)
Kim, Jae-Duk (EW R&D Lab., LIGNEX1)
Lee, Wang-Youg (EW R&D Lab., LIGNEX1)
Lee, Chang-Hoon (2nd R&D Institute, Agency for Defense Development)
Publication Information
ETRI Journal / v.38, no.5, 2016 , pp. 972-980 More about this Journal
Abstract
An ultra-wideband microwave monolithic integrated circuit high-power amplifier with excellent input and output return losses for phased array jammer applications was designed and fabricated using commercial $0.25-{\mu}m$ AlGaN/GaN technology. To improve the wideband performance, resistive matching and a shunt feedback circuit are employed. The input and output return losses were improved through a balanced design using Lange-couplers. This three-stage amplifier can achieve an average saturated output power of 15 W, and power added efficiency of 10% to 28%, in a continuous wave operation over a frequency range of 6 GHz to 18 GHz. The input and output return losses were demonstrated to be lower than -15 dB over a wide frequency range.
Keywords
Gallium nitride (GaN); microwave monolithic integrated circuit (MMIC); high power amplifier (HPA); wideband; return loss; electronic warfare(EW);
Citations & Related Records
Times Cited By KSCI : 2  (Citation Analysis)
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