• 제목/요약/키워드: back surface field

검색결과 161건 처리시간 0.029초

Analysis of Aluminum Back Surface Field on Different Wafer Specification

  • 박성은;배수현;김성탁;김찬석;김영도;탁성주;김동환
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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    • pp.216-216
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    • 2012
  • The purpose of this work is to investigate a back surface field (BSF) on variety wafer resistivity for industrial crystalline silicon solar cells. As pointed out in this manuscript, doping a crucible grown Cz Si ingot with Ga offers a sure way of eliminating the light induced degradation (LID) because the LID defect is composed of B and O complex. However, the low segregation coefficient of Ga in Si causes a much wider resistivity variation along the Ga doped Cz Si ingot. Because of the resistivity variation the Cz Si wafer from different locations has different performance as know. In the light of B doped wafer, we made wider resistivity in Si ingot; we investigated the how resistivities work on the solar cells performance as a BSF quality.

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실리콘 태양전지의 후면 점접촉 구조를 위한 Al 확산에 의한 국부 후면전계의 제조

  • 이준성;권순우;송청호;박성은;박하영;송주용;박효민;윤세왕;김동환
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2009년도 춘계학술발표대회
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    • pp.54.2-54.2
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    • 2009
  • 결정질 실리콘 태양전지의 알루미늄 후면전극이 패시베이션층의 공극을 통하여 확산됨으로써 국부 후면전계(local back surface field)가 형성되는 후면 점접촉 구조를 제조하였으며, 이에 대한 공정조건 및 특성을 연구하였다. 후면 패시베이션층은 실리콘 기판과 금속전극사이에 삽입됨으로써 표면 재결합속도를 낮추고, 후면 반사도를 높여 광흡수 경로를 증가시킬 수 있다. 고가의 사진식각기술 대신에 저가의 단순한 공정인 레이저 식각기술을 사용하여 후면 패시베이션층에 균일하고 잘 정렬된 공극 패턴을 형성할 수 있었다. 레이저 식각 조건 및 소성조건에 따른 Al 확산 국부 후면전계의 단면 형상을 주사전자현미경(SEM)을 사용하여 관찰하였으며 이에 대한 전기적, 광학적 특성 변화를 조사하였다.

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Numerical Analysis of Back Scattering from a Target over a Random Rough Surface Using DRTM

  • Yoon, Kwang-Yeol
    • Journal of electromagnetic engineering and science
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    • 제10권2호
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    • pp.61-66
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    • 2010
  • This paper is concerned with an analysis of the back scattering of electromagnetic waves from a target moving along random rough surfaces such as the desert, and sea. First, the discrete ray tracing method(DRTM) is introduced, and then, this method is applied to the back scattering problem in order to investigate the effect of the back scattering from random rough surfaces on the electric field intensities. Finally, numerical examples of various height deviations of the Gaussian type of rough surfaces are shown. It is numerically demonstrated that the back scattering is dominated by the diffractions related to the reflections from the random rough surfaces.

Analysis of Electromagnetic Wave Scattering from a Sea Surface Using a Monte-Carlo FDTD Technique

  • Choi Dong-Muk;Kim Che-Young;Kim Dong-Il;Jeon Joong-Sung
    • Journal of electromagnetic engineering and science
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    • 제5권2호
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    • pp.87-91
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    • 2005
  • This paper presents a Monte-Carlo FDTD technique to determine the scattered field from a perfectly conducting surface like a sea surface, from which the useful information on the incoherent pattern tendency could be observed. A one-dimensional sea surface used to analysis scattering was generated using the Pierson-Moskowitz model. In order to verify the numerical results by this technique, these results are compared with those of the small perturbation method, which show a good match between them. To investigate the incoherent pattern tendency involved, the dependence of the back scattering coefficients on the different wind speed(U) is discussed for the back scattering case.

Aluminum 및 Aluminum-Boron후면 전극에 따른 단결정 실리콘 태양전지 특성 (Characteristics of Mono Crystalline Silicon Solar Cell for Rear Electrode with Aluminum and Aluminum-Boron)

  • 홍지화;백태현;김진국;최성진;김남수;강기환;유권종;송희은
    • 한국태양에너지학회:학술대회논문집
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    • 한국태양에너지학회 2011년도 추계학술발표대회 논문집
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    • pp.34-39
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    • 2011
  • Screen printing method is a common way to fabricate the crystalline silicon solar cell with low-cost and high-efficiency. The screen printing metallization use silver paste and aluminum paste for front and rear contact, respectively. Especially the rear contact between aluminum and silicon is important to form the back surface filed (Al-BSF) after firing process. BSF plays an important role to reduces the surface recombination due to $p^+$ doping of back surface. However, Al electrode on back surface leads to bow occurring by differences in coefficient of thermal expansion of the aluminum and silicon. In this paper, we studied the properties of mono crystalline silicon solar cell for rear electrode with aluminum and aluminum-boron in order to characterize bow and BSF of each paste. The 156*156 $m^2$ p-type silicon wafers with $200{\mu}m$ thickness and 0.5-3 ${\Omega}\;cm$ resistivity were used after texturing, diffusion, and antireflection coating. The characteristics of solar cells was obtained by measuring vernier callipers, scanning electron microscope and light current-voltage. Solar cells with aluminum paste on the back surface were achieved with $V_{OC}$ = 0.618V, JSC = 35.49$mA/cm^2$, FF(Fill factor) = 78%, Efficiency = 17.13%.

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Rapid Thermal Process를 이용한 실리콘 태양전지의 국부적 후면 전극 최적화 (A study on the formation of local back surface field using Rapid Thermal Process)

  • 배수현;박성은;김영도;박효민;김수민;김성탁;김현호;탁성주;김동환
    • 한국신재생에너지학회:학술대회논문집
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    • 한국신재생에너지학회 2011년도 춘계학술대회 초록집
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    • pp.121.1-121.1
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    • 2011
  • 현재 상용화되고 있는 단결정 실리콘 태양전지는 알루미늄 페이스트를 이용하여 후면의 전 영역에 전계를 형성한다. 최근에는 고효율을 얻기 위하여 후면에 패시베이션 효과와 장파장에 대한 반사도를 증가 시키는 SiNx막을 증착 후, 국부적으로 전계를 형성하는 국부 후면 전극(Local back surface field)기술이 연구되고 있다. 본 연구에서는 전면만 텍스쳐 된 단결정 실리콘 웨이퍼를 이용하였다. Plasma Enhanced Chemical Vapor Deposition(PECVD)를 이용하여 전,후면에 SiNx를 증착 하였고 후면의 국부적인 전극 패턴 형성을 위하여 SiNx 식각용 페이스트를 사용한 스크린 프린팅 기술을 이용하였다. 스크린 프린팅을 이용하여 패턴이 형성된 후면에 알루미늄을 인쇄 한 후 Rapid Thermal Process(RTP)를 이용하여 소성 공정 조건을 변화시켰다. 소성 조건 동안 형성되는 후면 전계층은 peak 온도와 승온속도, 냉각 속도에 따라 형상이나 특성이 변화하기 때문에 소성 조건을 변화시키며 국부적 후면 전계 형성의 최적화에 관한 연구를 수행하였다. 패이스트를 이용하여 SiNx를 식각 후 광학 현미경(Optical Microscopy)을 사용하여 SiNx의 식각 유무를 살펴보았고, RTP로 형성된 국부 전계층의 형성 두께, 주변 부분의 형상을 살피기 위해 도핑 영역을 혼합수용액으로 식각하여 주사 전자 현미경(SEM)을 이용하여 관찰 하였다. 또한 후면의 특성을 살펴보기 위해 분광 광도계(UV/VIS/NIR Spectrophotometer)를 사용하여 후면 SiNx층의 유무에 따른 반사도를 비교, 측정 하였다.

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알루미늄-실리콘 공융 조성 합금 페이스트를 이용한 국부 후면 전계 태양전지 특성 분석 (Properties of Silicon Solar Cells with Local Back Surface Field Fabricated by Aluminum-Silicon Eutectic Alloy Paste)

  • 최재욱;박성은;배수현;김성탁;박세진;박효민;강윤묵;이해석;김동환
    • Current Photovoltaic Research
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    • 제4권4호
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    • pp.145-149
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    • 2016
  • Characteristic of aluminum-silicon alloy paste which is applied on the rear side of PERC cell was investigated. The paste was made by aluminum-silicon alloy with eutectic composition to avoid the formation of void which is responsible for the degradation of the open-circuit voltage. Also, the glass frit component of the paste was changed to improve the adhesion of aluminum-silicon paste. We observed the formation of void and local back surface field between aluminum electrode and silicon base by SEM. The light IV, quantum efficiency and reflectance of the solar cells were characterized and compared for each paste.

O2 플라즈마 표면처리에 의한 Bio-FET 소자의 특성 열화 및 후속 열처리에 의한 특성 개선 (Degradation of electrical characteristics in Bio-FET devices by O2 plasma surface treatment and improving by heat treatment)

  • 오세만;정명호;조원주
    • 한국진공학회지
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    • 제17권3호
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    • pp.199-203
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    • 2008
  • $O_2$ 플라즈마를 이용한 표면처리 공정이 Bio-FET (biologically sensitive field-effect transistor)에 미치는 영향을 조사하기 위하여, SOI (Silicon-on-Insulator) wafer와 sSOI (strained- Si-on-Insulator) wafer를 이용하여 pseudo-MOSFET을 제작하고 $O_2$ 플라즈마를 이용하여 표면처리를 진행하였다. 제작된 시료들은 back gated metal contact junction 방식으로 측정되었다. $I_D-V_G$ 특성과 field effect mobility 특성의 관찰을 통하여 $O_2$ 플라즈마 표면처리에 따른 각 시료들의 전기적 특성 변화에 대하여 관찰하였다. 그리고 $O_2$ 플라즈마 표면처리 과정에서 플라즈마에 의한 손상을 받은 시료들은 2% 수소희석가스 ($H_2/N_2$)를 이용한 후속 열처리 공정을 진행한 후 전기적 특성이 향상되는 것을 관찰할 수 있었다. 이는 수소희석가스를 이용한 후속 열처리 공정을 통하여 산화막과 Si 사이의 계면 준위와 산화막 내부의 전하 포획 준위를 감소시켰기 때문이다.

Influence of ventilation rate on the aerodynamic interference between two extra-large indirect dry cooling towers by CFD

  • Ke, S.T.;Liang, J.;Zhao, L.;Ge, Y.J.
    • Wind and Structures
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    • 제20권3호
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    • pp.449-468
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    • 2015
  • Current wind-resistance designs of large-scale indirect dry cooling towers (IDCTs) exclude an important factor: the influence of the ventilation rate for radiator shutter on wind loads on the outer surfaces of the tower shell. More seemingly overlooked aspects are the effects of various ventilation rates on the wind pressure distribution on the tower surfaces of two IDCTs, and the feature of the flow field around them. In order to investigate the effects of the radiator shutter ventilation rates on the aerodynamic interference between IDCTs, this paper established the numerical wind tunnel model based on the Computational Fluid Dynamic (CFD) technology, and analyzed the influences of various radiator shutter ventilation rates on the aerodynamic loads acting upon a single and two extra-large IDCTs during building, installation, and operation stages. Through the comparison with the results of physical wind tunnel test and different design codes, the results indicated that: the influence of the ventilation rate on the flow field and shape coefficients on the outer surface of a single IDCT is weak, and the curve of mean shape coefficients is close to the reference curve provided by the current design code. In a two-tower combination, the ventilation rate significantly affects the downwind surface of the front tower and the upwind surface of the back tower, and the larger positive pressure shifts down along the upwind surface of the back tower as the ventilation rate increases. The ventilation rate significantly influences the drag force coefficient of the back tower in a two-tower combination, the drag force coefficient increases with the ventilation rate and reaches the maximum in a building status of full ventilation, and the maximum drag coefficient is 11% greater than that with complete closure.

Investigation of Firing Conditions for Optimizing Aluminum-Doped p+-layer of Crystalline Silicon Solar Cells

  • Lee, Sang Hee;Lee, Doo Won;Shin, Eun Gu;Lee, Soo Hong
    • Current Photovoltaic Research
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    • 제4권1호
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    • pp.12-15
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    • 2016
  • Screen printing technique followed by firing has commonly been used as metallization for both laboratory and industrial based solar cells. In the solar cell industry, the firing process is usually conducted in a belt furnace and needs to be optimized for fabricating high efficiency solar cells. The printed-Al layer on the silicon is rapidly heated at over $800^{\circ}C$ which forms a layer of back surface field (BSF) between Si-Al interfaces. The BSF layer forms $p-p^+$ structure on the rear side of cells and lower rear surface recombination velocity (SRV). To have low SRV, deep $p^+$ layer and uniform junction formation are required. In this experiment, firing process was carried out by using conventional tube furnace with $N_2$ gas atmosphere to optimize $V_{oc}$ of laboratory cells. To measure the thickness of BSF layer, selective etching was conducted by using a solution composed of hydrogen fluoride, nitric acid and acetic acid. The $V_{oc}$ and pseudo efficiency were measured by Suns-$V_{oc}$ to compare cell properties with varied firing condition.