• 한국전기전자재료학회논문지
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• 제36권5호
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• pp.520-524
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• 2023

An algorithm was developed to detect and block serial arc currents using HPF. The AC series arc problem is that the load current is greater than the fault current and no leakage current occurs. As a solution, an arc detection method utilizing differences in high- frequency amplitudes was developed. HPT was applied to the load current and FFT was applied to eliminate low frequencies. An algorithm has been developed to detect arc waveforms when they exceed a certain value compared to the average of normal waveforms. Using one cycle of data, arc detection is faster and arc accidents are prevented.

• 한국재료학회지
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• 제13권4호
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• pp.233-238
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• 2003

Ferromagnetic tunnel junctions, Ta/Cu/Ta/NiFe/Cu/$Mn_{75}$ $Ir_{25}$ $Co_{70}$ $Fe_{30}$/Al-oxide, were fabricated by do magnetron sputtering and plasma oxidation process. The effect of annealing temperature on the local transport properties of the ferromagnetic tunnel junctions was studied using contact-mode Atomic Force Microscopy (AFM). The current images reflected the distribution of the barrier height determined by local I-V analysis. The contrast of the current image became more homogeneous and smooth after annealing at $280^{\circ}C$. And the average barrier height $\phi_{ave}$ increased and its standard deviation $\sigma_{\phi}$ X decreased. For the cases of the annealing temperature more than $300^{\circ}C$, the contrast of the current image became large again. And the average barrier height $\phi_{ave}$ decreased and its standard deviation $\sigma_{\phi}$ increased. Also, the current histogram had a long tail in the high current region and became asymmetric. This result means the generation of the leakage current that is resulted from the local generation of a low barrier height region. In order to obtain the high tunnel magnetoresistance(TMR) ratio, the increase of the average barrier height and the decrease of the barrier height fluctuation must be strictly controlled.led.

• Journal of Electrical Engineering and Technology
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• 제10권1호
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• pp.355-363
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• 2015

HVDC technology has become popular as an economic mode of bulk power transmission over very long distances. Polymeric insulators in HVDC power transmission lines are affected by surface tracking and erosion problems due to contamination deposit, which pose a greater challenge in maintaining the reliability of the HVDC system. In addition, polymeric insulators are also naturally affected by aging due to various environmental stresses, which in turn accelerates the surface tracking and erosion problems. Research works towards the improvement of tracking and erosion resistance of polymeric insulators by adding nano-sized fillers in the base material are being carried out worldwide. However, surface tracking and erosion performance of nano-filled aged polymeric insulators for HVDC applications are not well reported. Hence, in the present work, tracking and erosion resistance of the nano $Al(OH)_3$ filled silicone rubber insulation material has been evaluated under DC voltages at different filler concentrations and aged conditions, as per IEC 60587 test procedures. Leakage current and contact angle measurements were carried out to understand the surface hydrophobicity. Moving average technique was used to analyze the trend followed by leakage current. Water aged specimen shows less tracking resistance when compared with thermal aged specimen. It is observed that nano-filler concentration of 5% is even sufficient to get better tracking/erosion resistance under DC voltages.

• 한국재료학회지
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• 제20권7호
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• pp.374-378
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• 2010

$MgTiO_3$ thin films were prepared by r.f. magnetron sputtering in order to prepare miniaturized NPO type MLCCs. $MgTiO_3$ films showed a polycrystalline structure of ilmenite characterized by the appearance of (110) and (202) peaks. The intensity of the peaks decreased with an increase in the chamber pressure due to the decrease of crystallinity which resulted from the decrease of kinetic energy of the sputtered atoms. The films annealed at $600^{\circ}C$ for 60min. showed a fine grained microstructure without micro-cracks. The grain size and roughness of the $MgTiO_3$ films decreased with the increase of chamber pressure. The average surface roughness was 1.425~0.313 nm for $MgTiO_3$ films prepared at 10~70 mTorr. $MgTiO_3$ films showed a dielectric constant of 17~19.7 and a dissipation factor of 2.1~4.9% at 1MHz. The dielectric constant of the films is similar to that of bulk ceramics. The dielectric constant and the dissipation factor decreased with the increase of the chamber pressure due to the decrease of grain size and crystallinity. The leakage current density was $10^{-5}\sim10^{-7}A/cm^2$ at 200kV/cm and this value decreased with the increase of the chamber pressure. The small grain size and smooth surface microstructure of the films deposited at high chamber pressure resulted in a low leakage current density. $MgTiO_3$ films showed a near zero temperature coefficient and satisfied the specifications for NPO type materials. The dielectric properties of the $MgTiO_3$ thin films prepared by sputtering suggest the feasibility of their application for MLCCs.

• 한국전기전자재료학회논문지
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• 제11권1호
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• pp.48-56
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• 1998

Pr\ulcornerO\ulcorner-based ZnO varistors were fabricated in the range of $Y_2$O$_3$additive content from 0.5 to 4.0mol%, and its microstructure and electrical properties were investigated. Yttrium was distributed nearly in the grain boundaries and the cluster phase formed at nodal point but more in cluster phase. The average grain size was decreased markedly from 34.9 to 8.6${\mu}{\textrm}{m}$ with increasing $Y_2$O$_3$additive content. It is believed that the decrease of grain size is attributed to the formation of cluster phase and the weakening of driving force for liquid sintering. As a result, $Y_2$O$_3$was acted as the inhibitor of the grain growth. With increasing $Y_2$O$_3$additive content, the varistor voltage, the activation energy, and the nonlinear exponent increased whereas the leakage current decreased, especially 4.0mol% $Y_2$O$_3$-added varistor exhibited very good I-V characteristics; nonlinear exponent 87.42 and leakage current 46.77nA. On the other hand, as $Y_2$O$_3$additive content increases, the varistor showed tendency of the salient decrease for donor concentration and the increase for barrier height. Conclusively, it is estimated that ZnO:Pr varistor compositions added more than 2.0mol% $Y_2$O$_3$are to be used to fabricate useful varistors.

• Tribology and Lubricants
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• 제20권4호
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• pp.209-217
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• 2004

Lubrication characteristics between a cylinder block and a valve plate for high speed bent-axis type hydraulic pump play an important role in volumetric efficiency and durability of pump. In this paper, a finite element method is presented for the computation of the pressure distribution between a cylinder block and a valve plate for high speed bent-axis type hydraulic pump. Also, a Runge-Kutta method is applied to simulate the cylinder block dynamics of three-degrees of freedom motion. From the results of computation, we can draw two major conclusions. One is related to the fluid film characteristics between a cylinder block and a valve plate and the other is related to the average leakage that is determined by the pressure gradient and the clearance near the discharge port. The numerical results of cylinder block dynamics were compared with the experimental results using eddy-current type gap sensors those are fixed at a pump housing.

• 한국세라믹학회지
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• 제41권8호
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• pp.605-609
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• 2004

다양한 금속산화물(NiO, MgO, Cr$_2$O$_3$) 첨가에 따른 ZnO 바리스터의 미세구조, 전기적, 유전적 특성을 조사하였다. 평균 결정립 크기는 NiO 첨가로 증가한 반면 Cr$_2$O$_3$ 첨가로 감소하였다 이로 인해 바리스터 전압은Cr$_2$O$_3$ 첨가시 더 높게 나타났다. 바리스터 가운데서 Cr$_2$O$_3$가 첨가된 바리스터가 비직선 지수가 40.5, 누설전류가 2.7 $\mu$A로 가장 우수한 비직선성을 나타내었으며, 유전손실도 0.0589로 비교적 낮게 나타났다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.416-420
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• 2004

Varistors based on M.Matsuoka were prepared from ZnO nanopowders, every one of which had bar type and about less 100nm length. The compact green disks were conventionally sintered in air for 2 hours at a temperature of $1050^{\circ}C$. The Varistors with nonlinear coefficient ${\alpha}=45$, leakage current $I_{\ell}=2{\times}10^{-7}A/cm^2$, operating voltage 9000v/cm, and average grain size $3{\mu}m$ were obtained. The advantages of the samples were due to greater structural homogenity, higher density, smaller grain size.

• 한국전기전자재료학회논문지
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• 제17권9호
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• pp.924-929
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• 2004

The microstructure, electrical and dielectric characteristics of $ZnO-{Pr}_6{O}_11-{CoO}-{Dy}_2{O}_3$-based varistors were investigated without and with various metal oxide additives(NiO, MgO, Cr$_2$O$_3$). The average grain size decreased in the range of 18.4 $\backsim$ 11.5 $\mu$m, in order of NiO\longrightarrowMgO\longrightarrow{Cr}_2{O}_3$ and the density decreased in the range of 5.62 \backsim 5.33 $g/{cm}^3$ in order of NiO\longrightarrowCr$_2$O$_3$\longrightarrowMgO. While, the nonlinear exponent increased In the range of 19.8$\backsim$67.4 in order of NiO\longrightarrowMgO\longrightarrow${Cr}_2{O}_3$ and the leakage current decreased in the range of 25.6 $\backsim$ 1.2 $\mu$A in order of NiO\longrightarrow${Cr}_2{O}_3$\longrightarrowMgO. Among all varistors, the Cr$_2$O$_3$-added varistor exhibited the highest nonlinearity, with a nonlinear exponent of 67.4 and a leakage current of 1.2 $\mu$A. Furthermore, this varistor exhibited the lowest dielectric dissipation factor of 0.0407.

• 한국재료학회지
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• 제14권6호
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• pp.420-424
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• 2004

The microstructure and electrical properties of $ZnO-Pr_{6}$$O_{11}$ $-CoO-Y_2$$O_3$-based varistors were investigated with and without various metal oxide additives (NiO, MgO, and $Cr_2$$O_3$). The addition of NiO promoted the grain growth while that of Cr$_2$O$_3$ decreased average grain size. Thereby, the varistor voltage was higher in $Cr_2$$O_3$-added composition. Among $ZnO-Pr_{6}$ $O_{11}$ /$-CoO-Y_2$$O_3$-based varistors, the$ Cr_2$$O_3$-added varistor exhibited the highest nonlinear exponent (51.2), the lowest leakage current (1.3 $\mu$A), and the lowest dielectric dissipation factor (0.0433).