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http://dx.doi.org/10.3740/MRSK.2004.14.6.420

Microstructure and Electrical Properties of Zn-Pr-Co-Y-M(M=Ni, Mg, Cr) Oxide-Based Varistors  

Nahm Choon-Woo (Department of Electrical Engineering, Dongeui University)
Park Jong-Ah (Department of Electrical Engineering, Dongeui University)
Publication Information
Korean Journal of Materials Research / v.14, no.6, 2004 , pp. 420-424 More about this Journal
Abstract
The microstructure and electrical properties of $ZnO-Pr_{6}$$O_{11}$ $-CoO-Y_2$$O_3$-based varistors were investigated with and without various metal oxide additives (NiO, MgO, and $Cr_2$$O_3$). The addition of NiO promoted the grain growth while that of Cr$_2$O$_3$ decreased average grain size. Thereby, the varistor voltage was higher in $Cr_2$$O_3$-added composition. Among $ZnO-Pr_{6}$ $O_{11}$ /$-CoO-Y_2$$O_3$-based varistors, the$ Cr_2$$O_3$-added varistor exhibited the highest nonlinear exponent (51.2), the lowest leakage current (1.3 $\mu$A), and the lowest dielectric dissipation factor (0.0433).
Keywords
Microstructure; Varistor voltage; Nonlinear exponent; Leakage current.;
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