• Elastomers and Composites
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• v.47 no.3
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• pp.194-200
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• 2012

Rubber components have been widely used in automotive industry as anti-vibration components for many years. These subjected to fluctuating loads, often fail due to the nucleation and growth of defects or cracks. To prevent such failures, it is necessary to understand the fatigue failure mechanism for rubber materials and to evaluate the fatigue life for rubber components. The objective of this study is to develop the durability analysis process for vulcanized rubber components, which is applicable to predict fatigue life at initial product design step. The determination method of nonlinear material constants for FE analysis was proposed. In order to investigate the applicability of the commonly used damage parameters, fatigue tests and corresponding finite element analyses were carried out and strain energy density was proposed as the fatigue damage parameter for rubber components. The fatigue analysis for automotive rubber components was performed and the durability analysis process was reviewed.

• Bulletin of the Korean Chemical Society
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• v.32 no.3
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• pp.921-926
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• 2011

This study investigates a root cause of the improved rate performance of $LiFePO_4$ after metal doping to Fesites. This is because the metal doped $LiFePO_4$/C maintains its initial capacity at higher C-rates than undoped one. Using $LiFePO_4$/C and doped $LiFe_{0.97}M_{0.03}PO_4$/C (M=$Al^{3+}$, $Cr^{3+}$, $Zr^{4+}$), which are synthesized by a mechanochemical process followed by one-step heat treatment, the Li content before and after chemical delithiation in the $LiFePO_4$/C and the binding energy are compared using atomic absorption spectroscopy (AAS) and X-ray photoelectron spectroscopy (XPS). The results from AAS and XPS indicate that the low Li content of the metal doped $LiFePO_4$/C after chemical delithiation is attributed to the low binding energy induced by weak Li-O interactions. The improved capacity retention of the doped $LiFePO_4$/C at high discharge rates is, therefore, achieved by relatively low binding energy between Li and O ions, which leads to fast Li diffusivity.

• Nuclear Engineering and Technology
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• v.25 no.4
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• pp.552-560
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• 1993

In this study, the detailed fuel assembly stress analysis model to evaluate the structural integrity for seismic and blowdown accidents is developed. For this purpose, as the first step, the program MAIN which identifies the worst bending mode shaped fuel assembly(FA) in core model is made. And the finite element model for stress calculation of FA components is developed. In the model the fuel rods (FRs) and the guide thimbles are modelled by 3-dimensional beam elements, and the spacer grid spring is modelled by a linear and relational spring. The constraints come from the results of the program MAIN. The stress analysis of the 16$\times$16 type FA under arbitary seismic load is performed using the developed program and modelling technique as an example. The developed stress model is helpful for the stress calculation of FA components for seismic and blowdown loads to evaluate the structural integrity of FA.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.175-175
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• 2000

Si(100) surfaces were exposed to gas-phase thermal-energy hydrogen atoms, H(g). We find that thermal H(g) atoms etch, amorphize, or penetrate into the crystalline silicon substrate, depending on the employed Ts range during the H(g) exposure. We find that etching is enhanced as Ts is lowered in the 300-700K range, while amorphous silicon hydride (a-Si:H) formation dominates at a Ts below 300K. This result was well explained by the fact that formation of the etching precursor, SiHx(a), and amorphization are both facilitated by a lower Ts, whereas the final step for etching, SiH3(a) + H(g) longrightarrow SiH3(g), is suppressed at a lower Ts. we also find that direct absorption of H(g) by the crystalline bulk of Si(100) substrate occurs within a narrow Ts window of 420-530K. The bulk-absorbed hydrogen evolved out molecularly from Si(100) at a Ts 80-120K higher than that for surface monohydride phase ($\beta$1) in temperature-programmed desorption. This bulk-phase H uptake increased with increasing H(g) exposure without saturation within our experimental limits. Direct absorption of H(g) into the bulk lattice occurs only when the surface is atomically roughened by surface etching. While pre-adsorbed hydrogen atoms on the surface, H(a), were readily abstracted and replaced by D(g), the H atoms previously absorbed in the crystalline bulk were also nearly all depleted, albeit at a much lower rate, by a subsequent D(g) at the peak temperature in TPD from the substrate sequentially treated with H(g) and D(g), together with a gas phase-like H2 Raman frequency of 4160cm-1, will be presented.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.180-180
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• 2010

Thin film transistors (TFTs) based on oxide semiconductors have emerged as a promising technology, particularly for active-matrix TFT-based backplanes. Currently, an amorphous oxide semiconductor, such as InGaZnO, has been adopted as the channel layer due to its higher electron mobility. However, accurate and repeatable control of this complex material in mass production is not easy. Therefore, simpler polycrystalline materials, such as ZnO and $SnO_2$, remain possible candidates as the channel layer. Inparticular, ZnO-based TFTs have attracted considerable attention, because of their superior properties that include wide bandgap (3.37eV), transparency, and high field effect mobility when compared with conventional amorphous silicon and polycrystalline silicon TFTs. There are some technical challenges to overcome to achieve manufacturability of ZnO-based TFTs. One of the problems, the stability of ZnO-based TFTs, is as yet unsolved since ZnO-based TFTs usually contain defects in the ZnO channel layer and deep level defects in the channel/dielectric interface that cause problems in device operation. The quality of the interface between the channel and dielectric plays a crucial role in transistor performance, and several insulators have been reported that reduce the number of defects in the channel and the interfacial charge trap defects. Additionally, ZnO TFTs using a high quality interface fabricated by a two step atomic layer deposition (ALD) process showed improvement in device performance In this study, we report the fabrication of high performance ZnO TFTs with a $Si_3N_4$ gate insulator treated using plasma. The interface treatment using electron cyclotron resonance (ECR) $O_2$ plasma improves the interface quality by lowering the interface trap density. This process can be easily adapted for industrial applications because the device structure and fabrication process in this paper are compatible with those of a-Si TFTs.

• Proceedings of the ESK Conference
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• 1997.04a
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• pp.56-60
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• 1997

The study of human erroneous actions has traditionally taken place along two different lines of approach. One has been concerned with finding and explaining the causes of erroneous actions, such as studies in the psychology of "error". The other has been concerned with the qualitative and quantitative prediction of possible erroneous actions, exemplified by the field of human reliability analysis (HRA). Another distinction is also that the former approach has been dominated by an academic point of view, hence emphasising theories, models, and experiments, while the latter has been of a more pragmatic nature, hence putting greater emphasis on data and methods. We have been developing a method to make predictions about error modes. The input to the method is a detailed task description of a set of scenarios for an experiment. This description is then analysed to characterise thd nature of the individual task steps, as well as the conditions under which they must be carried out. The task steps are expressed in terms of a predefined set of cognitive activity types. Following that each task step is examined in terms of a systematic classification of possible error modes and the likely error modes are identified. This effectively constitutes a qualitative analysis of the possibilities for erroneous action in a given task. In order to evaluate the accuracy of the predictions, the data from a large scale experiment were analysed. The experiment used the full-scale nuclear power plant simulator in the Halden Man-Machine Systems Laboratory (HAMMLAB) and used six crews of systematic performance observations by experts using a pre-defined task description, as well as audio and video recordings. The purpose of the analysis was to determine how well the predictions matiched the actually observed performance failures. The results indicated a very acceptable rate of accuracy. The emphasis in this experiment has been to develop a practical method for qualitative performance prediction, i.e., a method that did not require too many resources or specialised human factors knowledge. If such methods are to become practical tools, it is important that they are valid, reliable, and robust.

• Nuclear Engineering and Technology
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• v.56 no.3
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• pp.973-979
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• 2024

In the framework of the Generation IV research and development project, in which the French Commission of Alternative and Atomic Energies (CEA) is involved, a main objective for the design of Sodium-cooled Fast Reactor (SFR) is to meet the safety goals for severe accidents. Among the severe ones, the Unprotected Transient OverPower (UTOP) accidents can lead very quickly to a global melting of the core. UTOP accidents can be considered either as slow during a Control Rod Withdrawal (CRW) or as fast. The paper focuses on fast UTOP accidents, which occur in a few milliseconds, and three different scenarios are considered: rupture of the core support plate, uncontrolled passage of a gas bubble inside the core and core mechanical distortion such as a core flowering/compaction during an earthquake. Several levels and rates of reactivity insertions are also considered and the thermal-mechanical behavior of an ASTRID fuel pin from the ASTRID CFV core is simulated with the GERMINAL code. Two types of fuel pins are simulated, inner and outer core pins, and three different burn-up are considered. Moreover, the feedback from the CABRI programs on these type of transients is used in order to evaluate the failure mechanism in terms of kinetics of energy injection and fuel melting. The CABRI experiments complete the analysis made with GERMINAL calculations and have shown that three dominant mechanisms can be considered as responsible for pin failure or onset of pin degradation during ULOF/UTOP accident: molten cavity pressure loading, fuel-cladding mechanical interaction (FCMI) and fuel break-up. The study is one of the first step in fast UTOP accidents modelling with GERMINAL and it has shown that the code can already succeed in modelling these type of scenarios up to the sodium boiling point. The modeling of the radial propagation of the melting front, validated by comparison with CABRI tests, is already very efficient.

• Economic and Environmental Geology
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• v.57 no.4
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• pp.371-386
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• 2024

This paper presents analytical insights regarding into the occurrence of gold within organic matter, which is hosted by solid bitumen and closely associated with uranium ores in the Late Permian Kővágószőllős Sandstone Formation in Western Mecsek, South-West Hungary. The study utilizes a range of analytical techniques, including X-ray powder diffraction (XRPD) and wavelength dispersive X-ray fluorescence (WD-XRF) for comprehensive mineralogical and elemental analysis; organic petrography and electron microprobe analysis for characterizing organic matter; and an organic elemental analyzer for identifying organic compounds. A three-step sequential extraction method was used to liberate gold from organic matter and sulfide minerals, employing KOH, HCl, and aqua regia, followed by inductively coupled plasma optical emission spectroscopy (ICP-OES) to quantify gold contents. The organic matter is identified as comprising two vitrinite types (telinite V1 and reworked V2) and three solid bitumen forms: nonfluorescing (B1) and fluorescing (B2) fillings within the V1, as well as homogenous pyrobitumen (PB) occupying narrow cracks and voids within globular quartz. Despite the samples exhibiting low total organic carbon content (<1 wt%), they display high sulfur content (up to 6 wt%) and the sequentially extracted noble metal content from the organic matter is found to total 7.45 ppm gold. The research findings suggest that organic matter plays crucial roles in ore mineralization processes. Organic matter acts as an active component in the migration of gold, uranium, and hydrocarbons within sulfur-rich hydrothermal fluids. Additionally, organic matter contributes to the entrapment and enrichment of gold in hetero-atomic organic fractions, forming metal-organic compounds. Moreover, uranium inclusions are observed as oxide/phosphate minerals within solid bitumen and associated vitrinite particles. These insights into the occurrence and distribution of gold within organic matter highlight substantial exploration potential, guiding additional research activities focused on organic matter within the Kővágószőllős Sandstone Formation at the Western Mecsek deposit.

• The Journal of Engineering Geology
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• v.22 no.1
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• pp.27-37
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• 2012

To investigate the effect of aquifer disturbance on hydraulic properties while well drilling at unconsolidated aquifer, the following tests were conducted: the surge block and air-surging methods, which are well development methods used after well drilling; and step-drawdown tests and constant-rate pumping tests, which are used to assess changes in the aquifer after well drilling and development. The result of step-drawdown tests indicated that drawdown for a pumping-rate of $700m^3/day$ was 21.62 m after well development, decreasing 4.39 m from 26.01 m after well drilling. The skin factor used to identify the well properties decreased from 7.92 after well drilling to 5.04 after well development, respectively, which shows the improvement of well. Constant-rate pumping tests revealed a small increase in aquifer transmissivity after well development at MW-2, -3, and -4, centering around pumping well, from $1.684{\times}10^{-3}{\sim}4.490{\times}10^{-3}m^2/sec$ to $4.002{\times}10^{-3}{\sim}4.939{\times}10^{-3}m^2/sec$. MW-1, however, showed decline in hydraulic conductivity from $1.018{\times}10^{-2}m^2/sec$ to $6.988{\times}10^{-3}m^2/sec$, which was caused by a small decrease of aquifer permeability around monitoring well MW-1 due to latent factor of air interception and clogging in aquifer during surging. This finding indicates that fine particles have an effect on hydraulic properties at unconsolidated aquifers during well drilling; therefore, we consider that well drilling and development have an effect on hydraulic properties.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.239-240
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• 2008

As semiconductor devices are scaled down for better performance and more functionality, the Cu-based interconnects suffer from the increase of the resistivity of the Cu wires. The resistivity increase, which is attributed to the electron scattering from grain boundaries and interfaces, needs to be addressed in order to further scale down semiconductor devices [1]. The increase in the resistivity of the interconnect can be alleviated by increasing the grain size of electroplating (EP)-Cu or by modifying the Cu surface [1]. Another possible solution is to maximize the portion of the EP-Cu volume in the vias or damascene structures with the conformal diffusion barrier and seed layer by optimizing their deposition processes during Cu interconnect fabrication, which are currently ionized physical vapor deposition (IPVD)-based Ta/TaN bilayer and IPVD-Cu, respectively. The use of in-situ etching, during IPVD of the barrier or the seed layer, has been effective in enlarging the trench volume where the Cu is filled, resulting in improved reliability and performance of the Cu-based interconnect. However, the application of IPVD technology is expected to be limited eventually because of poor sidewall step coverage and the narrow top part of the damascene structures. Recently, Ru has been suggested as a diffusion barrier that is compatible with the direct plating of Cu [2-3]. A single-layer diffusion barrier for the direct plating of Cu is desirable to optimize the resistance of the Cu interconnects because it eliminates the Cu-seed layer. However, previous studies have shown that the Ru by itself is not a suitable diffusion barrier for Cu metallization [4-6]. Thus, the diffusion barrier performance of the Ru film should be improved in order for it to be successfully incorporated as a seed layer/barrier layer for the direct plating of Cu. The improvement of its barrier performance, by modifying the Ru microstructure from columnar to amorphous (by incorporating the N into Ru during PVD), has been previously reported [7]. Another approach for improving the barrier performance of the Ru film is to use Ru as a just seed layer and combine it with superior materials to function as a diffusion barrier against the Cu. A RulTaN bilayer prepared by PVD has recently been suggested as a seed layer/diffusion barrier for Cu. This bilayer was stable between the Cu and Si after annealing at $700^{\circ}C$ for I min [8]. Although these reports dealt with the possible applications of Ru for Cu metallization, cases where the Ru film was prepared by atomic layer deposition (ALD) have not been identified. These are important because of ALD's excellent conformality. In this study, a bilayer diffusion barrier of Ru/TaCN prepared by ALD was investigated. As the addition of the third element into the transition metal nitride disrupts the crystal lattice and leads to the formation of a stable ternary amorphous material, as indicated by Nicolet [9], ALD-TaCN is expected to improve the diffusion barrier performance of the ALD-Ru against Cu. Ru was deposited by a sequential supply of bis(ethylcyclopentadienyl)ruthenium [Ru$(EtCp)_2$] and $NH_3$plasma and TaCN by a sequential supply of $(NEt_2)_3Ta=Nbu^t$ (tert-butylimido-trisdiethylamido-tantalum, TBTDET) and $H_2$ plasma. Sheet resistance measurements, X-ray diffractometry (XRD), and Auger electron spectroscopy (AES) analysis showed that the bilayer diffusion barriers of ALD-Ru (12 nm)/ALD-TaCN (2 nm) and ALD-Ru (4nm)/ALD-TaCN (2 nm) prevented the Cu diffusion up to annealing temperatures of 600 and $550^{\circ}C$ for 30 min, respectively. This is found to be due to the excellent diffusion barrier performance of the ALD-TaCN film against the Cu, due to it having an amorphous structure. A 5-nm-thick ALD-TaCN film was even stable up to annealing at $650^{\circ}C$ between Cu and Si. Transmission electron microscopy (TEM) investigation combined with energy dispersive spectroscopy (EDS) analysis revealed that the ALD-Ru/ALD-TaCN diffusion barrier failed by the Cu diffusion through the bilayer into the Si substrate. This is due to the ALD-TaCN interlayer preventing the interfacial reaction between the Ru and Si.