• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.16 no.8
• /
• pp.693-699
• /
• 2003

To improve thermal stability of Teflon FEP which is the most widely used materials for electret application, Teflon AF film of 1 $\mu\textrm{m}$ thick was spin coated on FEP film and the charge storage properties were investigated. The surface potential depend on aging temperature. Thermal Stimulated Current(TSC), Atomic Force Microscopy(AFM), and Fourier Transform-Infrared Spectroscope(FT-lR) measurements were carried out. It is shown that the AF/FEP dual film have more higher electrical property and thermal stability than that FEP film have caused by charge stored at interface of AF and FEP.

• Proceedings of the Korean Magnestics Society Conference
• /
• 2015.11a
• /
• pp.98-98
• /
• 2015

• Nuclear Engineering and Technology
• /
• v.34 no.3
• /
• pp.202-210
• /
• 2002

The details of the electronic structure of the perfect crystal provides a critically important foundation for understanding the various defect states in uranium dioxide. In order to understand the local defect and impurity mechanism, the calculation of electronic structure of UO$_2$ in the one-electron approximation was carried out, using a semi-empirical tight-binding formalism(LCAO) with and without f-orbitals. The energy band, local and total density of states for both spin states are calculated from the spectral representation of Green’s function. The bonding mechanism in Perfect lattice of UO$_2$ is discussed based upon the calculations of band structure, local and total density of states.

• Bulletin of the Korean Chemical Society
• /
• v.20 no.12
• /
• pp.1441-1446
• /
• 1999

Laser-induced fluorescence (LIF) spectroscopy has been applied to study the supersonic jet of radicals of nitric oxide (NO) and atomic iodine produced in the flash pyrolysis of precursors n-butylnitrite (CH₃(CH₂)₃ONO) and allyl iodide (C₃$H_5$I), respectively. The systematic population analysis with spectral simulations demonstrates that the precursors are efficiently pyrolyzed and that radical beams show a substantial supersonic cooling. In addition, absence of local equilibrium was observed in the distributions of two electronic spin-orbit states ²Π$_{1/2}$ and ²Π$_{3/2}$ of NO products and can be rationalized in terms of the efficiency of collision-induced energy transfer rates.

• Journal of the Korean Magnetics Society
• /
• v.5 no.5
• /
• pp.767-771
• /
• 1995

The atomic structure and magnetic properties of $LaCo_{13}$ amorphous alloy have been investigated and compared with those of its crystalline counterpart. It has been confirmed that the amorphous alloy is composed of the icosahedral clusters with a $NaZn_{13}$-type structure. The magnetic moment and the spin- wave stiffness constant obtained from the magnetic measurements in the amorphous state are larger than those in the crystalline state. The Curie temperature estimated from the reduced magnetization curve for the former is much higher than the value for the latter. The localized magnetic moment character in the amorphous state is stronger than that in the crystalline state.

• Transactions of the Korean hydrogen and new energy society
• /
• v.28 no.1
• /
• pp.63-69
• /
• 2017

In this work, two different platinum (Pt) counter electrodes have been prepared by spin coating a Pt solution and screen printing a Pt paste on fluorine doped tin oxide (FTO) glass substrate followed by sintering at $380^{\circ}C$ for 30 min. Linear sweep voltammetry (LSV) and electrochemical impedance spectroscopy (EIS) analyses of the Pt electrodes showed that the spin coated electrode was catalytically more active than the screen printed electrode. The above result agrees well with the surface morphology of the electrodes studied by atomic force microscopy (AFM) and the photovoltaic performance of the dye-sensitized solar cells (DSSCs) fabricated with the Pt electrodes. Moreover, calculation of current density-voltage (j-V) curves according to diode model with the parameters obtained from the experimental j-V curves and the EIS data of the DSSCs provided a quantitative insight about how the catalytic activity of the counter electrodes affected the photovoltaic performance of the cells. Even though the experimental situations involved in this work are trivial, the method of analyses outlined here gives a strong insight about how the catalytic activity of a counter electrode affects the photovoltaic performance of a DSSC. This work, also, demonstrates how the photovoltaic performance of DSSCs can be improved by tuning the performance of counter electrode materials.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.08a
• /
• pp.238-239
• /
• 2010

Dimethyl sulphoxide (DMSO) is one of the widely-used secondary dopants in order to enhance the conductivity of poly(3, 4-ethylenedioxy-thiophene):poly(styrene sulfonate) (PEDOT:PSS) film. In this work, we investigated the effect of DMSO doping in to PEDOT:PSS on the electrical performance of the bulk heterojunction photovoltaics consisting of poly(3-hexylthiophene-2, 5-diyl) and phenyl-C61-butyric acid methyl ester. Correlation between the power conversion efficiency and the mechanism of improving conductivity, surface morphology, and contact properties was examined. The PEDOT:PSS films, which contain different concentration of DMSO, have been prepared and annealed at different annealing temperatures. The mixture of DMSO and PEDOT:PSS was prepared with a ratio of 1%, 5%, 15%, 25%, 35%, 45%, 55% by volume of DMSO, respectively. The DMSO-contained PEDOT:PSS solutions were stirred for 1hr at $40^{\circ}C$, then spin-coated on the ultra-sonicated glass. The spin-coated films were baked for 10min at $65^{\circ}C$, $85^{\circ}C$, and $120^{\circ}C$ in air. In order to investigate the electrical performance, P3HT:PCBM blended film was deposited with thickness of 150nm on DMSO-doped PEDOT:PSS layer. After depositing 100nm of Al, the device was post-annealed for 30min at $120^{\circ}C$ in vacuum. The fabricated cells, in this study, have been characterized by using several techniques such as UV-Visible spectrum, 4-point probe, J-V characteristics, and atomic force microscopy (AFM). The power conversion efficiency (AM 1.5G conditions) was increased from 0.91% to 2.35% by tuning DMSO doping ratio and annealing temperature. It is believed that the improved power conversion efficiency of the photovoltaics is attributed to the increased conductivity, leading to increasing short-circuit current in DMSO-doped PEDOT:PSS layer.

• Journal of the Korean Magnetics Society
• /
• v.10 no.1
• /
• pp.16-21
• /
• 2000

Magnetic properties and crystallographic properties of $Cu_{0.95}Ge_{0.95}Fe_{0.1}O_3$ were studied by using x-ray diffraction, superconducting quantum interference device (SQUID) and Mossbauer spectroscopy. Our sample has orthorhombic structure and the lattice constants are a = 4.795 $\AA$, b = 8.472 $\AA$, c = 2.932 $\AA$. The spin-Peierls (SP) transition temperatures of our sample is 13 K. The Mossbauer spectra consisted with two Zeeman sextets and one doublet due to $Fe^{3+}$ions. The Zeeman sextets come from tetrahedral $Fe^{3+}$ions and the doublets come from octahedral $Fe^{3+}$ions. The jump up of magnetic hyperfine field of 2nd Zeeman sextet and the increasing of the values of quadrupole splitting and isomer shift of doublet below SP transition temperature could be interpreted related with the atomic displacements. The N el temperature is 715 K, the Debye temperature are 540 K for octahedral site and 380 K for tetrahedral site, respectively.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.02a
• /
• pp.341-341
• /
• 2012

Recently, oxide semi-conductor materials have been investigated as promising candidates replacing a-Si:H and poly-Si semiconductor because they have some advantages of a room-temperature process, low-cost, high performance and various applications in flexible and transparent electronics. Particularly, amorphous indium-gallium-zinc-oxide (a-IGZO) is an interesting semiconductor material for use in flexible thin film transistor (TFT) fabrication due to the high carrier mobility and low deposition temperatures. In this work, we demonstrated improvement of flexibility in IGZO TFTs, which were fabricated on polyimide (PI) substrate. At first, a thin poly-4vinyl phenol (PVP) layer was spin coated on PI substrate for making a smooth surface up to 0.3 nm, which was required to form high quality active layer. Then, Ni gate electrode of 100 nm was deposited on the bare PVP layer by e-beam evaporator using a shadow mask. The PVP and $Al_2O_3$ layers with different thicknesses were used for organic/inorganic multi gate dielectric, which were formed by spin coater and atomic layer deposition (ALD), respectively, at $200^{\circ}C$. 70 nm IGZO semiconductor layer and 70 nm Al source/drain electrodes were respectively deposited by RF magnetron sputter and thermal evaporator using shadow masks. Then, IGZO layer was annealed on a hotplate at $200^{\circ}C$ for 1 hour. Standard electrical characteristics of transistors were measured by a semiconductor parameter analyzer at room temperature in the dark and performance of devices then was also evaluated under static and dynamic mechanical deformation. The IGZO TFTs incorporating hybrid gate dielectrics showed a high flexibility compared to the device with single structural gate dielectrics. The effects of mechanical deformation on the TFT characteristics will be discussed in detail.

• Journal of the Korean Magnetics Society
• /
• v.15 no.2
• /
• pp.125-129
• /
• 2005

Ba-Ferrite thin films were prepared on $A1_2O_3$ substrate by a pulsed laser deposition system and characterized by SEM, $M\ddot{o}$ssbauer spectroscopy and VSM. The appropriate conditions of pulsation in Ba-ferrite was the oxygen pressure of 0.1 Torr at a substrate temperature of $400^{\circ}C$ and the thickness was variable with the deposition time. Ba-ferrite crystals had the forms of hexagonal plate in the 5 minute deposited film and the needle grains coexisted with the increasing film thickness. $M\ddot{o}ssbauer$ spectroscopy assured that the direction of atomic spin in Fe ion tends to normal to the substrate in the hexagonal plate. The VSM curves have the two types hysteresis of hexagonal and needle phase.