• Journal of the Korean Society of Safety
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• v.10 no.2
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• pp.84-91
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• 1995

The characteristics of critical spontaneous ignition of granulated activated carbon were investigated In atmospheres of differing oxygen concentration. At the same concentration the larger vessels yielded the lower critical spontaneous ignition temperature. At the same vessel, as the concentration of oxygen was reduced, Ignition occurred later and at higher ambient temperature, and critical spontaneous ignition temperature increased. The apparent activation energy calculated from the Frank-Kamenetskii's ignition theory appeared to be the slight different value respectively and the mean apparent activation energy was 19850㎈/㏖.

• Proceedings of the Korea Institute of Fire Science and Engineering Conference
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• 1997.11a
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• pp.203-210
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• 1997

Reports of explosions in cargo and storage tanks of high flash point liquids such as residual fuel oil, asphalt, and oily waste water have shown that these explosions have occurred even when the liquid temperatures are well below the liquid nominal flash point. The reasons for these seemingly paradoxical explosions are reviewed and results of recent laboratory tests are presented to better define the conditions leading to flammable vapor atmospheres in these tanks. The potential effectiveness of various prevention measures are discussed including inerting, monitoring tank vapor concentrations, and periodic cleaning of condensation and deposits on the tank walls and roof.

• Transactions of the Korean Society of Machine Tool Engineers
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• v.14 no.2
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• pp.33-41
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• 2005

ZnO epilayer was synthesized by the pulsed laser deposition(PLD) process on Al$_2$O$_3$ subsorte after irradiating the surface of ZnO sintered pellet by ArF(193nm) excimer laser. The epilayers of ZnO were achieved on sapphire(A1203) substrate at the 境mperature of 400$^{circ}$C. The crystalline structure of epilayer was investigated by the Photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of ZnO epilayer measure with Hall effect by van der Pauw mothod are $8.27\times$1016cm$^{-3}$ and 299 cm$^{2}$/V$\cdot$s at 293 K respectively, The temperature dependence of the energy band gap of the ZnO obtained from the absorption spectra was well described by the Varshni's relation, E$_g$(T)= 3.3973 eV - ($2.69\times$ 10$^{-4}$ eV/K)T$^{2}$/(T + 463K). After the as-grown ZnO epilayer was annealed in Zn atmospheres, oxygen and vaccum the origin of point defects of ZnO atmospheres has been investigated by the photoluminescence(PL) at 10K. The native defects of V$_{Zn}$, V$_{O}$, Zn$_{int}$, and O$_{int}$ obtained by PL measurements were classified as a donor or acceptor type. In addition we concluded that the heat-treatment in the oxygen atmosphere converted ZnO thin films to an optical p-type. Also, we confirmed that vacuum in ZnO/Al$_2$O$_3$ did not firm the native defects because vacuum in ZnO thin films existed in the form of stable bonds.

• Journal of the Korean Society of Marine Environment & Safety
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• v.26 no.4
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• pp.317-326
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• 2020

In this study, damages caused by flash fire, overpressure, and thermal radiation based on the sizes of leak holes were evaluated using the areal location of hazardous atmospheres when natural gas leaked owing to the damage of pipeline in a LNG fueled ship. In addition, environmental variables (wind speed, atmospheric temperature, and atmospheric stability) and process variables (pipe pressure and pipe length) were classified to analyze the damage impact ranges caused by various scenarios. From the results, the damage range caused by the environmental variables was the largest, followed by overpressure and thermal radiation. Additionally, for the process variables, regardless of the pressure, length, or size of the leak holes, the damage range attributed to flash fire was the most significant, and the damage range was high in the order of overpressure and thermal radiation, similar to the environmental variables. The larger the size of the leak holes, the higher the values of the environmental and process variables, and the higher the damage range caused by jet fire compared to the environmental variables.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.105-106
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• 2008

Structural, optical and electrical properties of CdS films deposited by chemical bath deposition (CBD), which are a very attractive method for low-cost and large-area solar cells, are presented. Cadmium sulfide (CdS) is II-VI semiconductor with a wide band gap of approximately 2.42 eV. CdS films have a great application potential such as solar cell, optical detector and optoelectronics device. In this paper, effects of Rapid Thermal Process (RTP) on the properties of CdS films were investigated. The CdS films were prepared on a glass by chemical bath deposition (CBD) and subsequently annealed at standard temperature $(400^{\circ}C)$ and treatment time (10 min) in various atmospheres (air, vacuum and $N_2$). The CdS films treated RTP in $N_2$ for to min were showed larger grain size and higher carrier density than the other samples.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 2004.10a
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• pp.233-244
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• 2004

ZnO epilayer were synthesized by the pulesd laser deposition(PLD) process on $Al_2O_3$ substrate after irradiating the surface of the ZnO sintered pellet by the ArF(193nm) excimer laser. The epilayers of ZnO were achieved on sapphire ($Al_2O_3$)substrate at a temperature of $400^{\circ}C$. The crystalline structure of epilayer was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of ZnO epilayer measured with Hall effect by van der Pauw method are $8.27{\times}10^{16}\;cm^{-3}$ and $299\;{\textrm}cm^2/V.s$ at 293K. respectively. The temperature dependence of the energy band gap of the ZnO obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;3.3973\;eV\;-\;(2.69{\times}10^{-4}\;eV/K)T^2/(T+463K)$. After the as-grown ZnO epilayer was annealed in Zn atmospheres, oxygen and vaccum the origin of point defects of ZnO atmospheres has been investigated by the photoluminescence(PL) at 10K. The native defects of $V_{zn},\;Vo,\;Zn_{int},\;and\;O_{int}$ obtained by PL measurements were classified as a donors or acceptors type. In addition, we concluded that the heat-treatment in the oxygen atmosphere converted ZnO thin films to an optical p-type. Also, we confirmed that vacuum in $ZnO/Al_2O_3$ did not form the native defects because vacuum in ZnO thin films existed in the form of stable bonds.

• Korean Journal of Materials Research
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• v.25 no.12
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• pp.659-665
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• 2015

The self-propagating high temperature synthesis approach was applied to synthesize amorphous boron nano-powders in argon atmospheres. For this purpose, we investigated the characteristics of a thermally induced combustion wave in the $B_2O_3+{\alpha}Mg$ system(${\alpha}=1.0-8.0$) in an argon atmospheres. In this study, the exothermic nature of the $B_2O_3-Mg$ reaction was investigated using thermodynamic calculations. Experimental study was conducted based on the calculation data and the SHS products consisting of crystalline boron and other compounds were obtained starting with a different initial molar ratio of Mg. It was found that the $B_2O_3$ and Mg reaction system produced a high combustion temperature with a rapid combustion reaction. In order to regulate the combustion reaction, NaCl, $Na_2B_4O_7$ and $H_3BO_3$ additives were investigated as diluents. In an experimental study, it was found that all diluents effectively stabilized the reaction regime. The final product of the $B_2O_3+{\alpha}Mg$ system with 0.5 mole $Na_2B_4O_7$ was identified to be amorphous boron nano-powders(< 100 nm).

• Korean Journal of Materials Research
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• v.9 no.5
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• pp.509-514
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• 1999

Interest in the integrated capacitors, which make it possible to reduce the size of and to obtain improved electrical performance of an electronic system, is expanding. In this study, $Ta_2$O\ulcorner thin film capacitors for MCM integrated capacitors were fabricated on a Upilex-S polymer film by DC magnetron reactive sputtering and the effects of low temperature annealing at various atmospheres and substrate surface morphology on the capacitor characteristics were discussed. The low temperature($150^{\circ}C$) annealing produced improved capacitor yield irrespective of the annealing at mosphere. But the leakage current of the $O_2$-annealed film was larger than that of any other films. This is presumably mosphere. But the leakage current of the $O_2$-annealed film was larger than that of any other films. This is presumably due to the change of the $Ta_2$O\ulcorner film surface by oxygen, which was explained by conduction mechanism study. Leakage current and breakdown field strength of the capacitors fabricated on the Upilex-S film were 7.27$\times$10\ulcornerA/$\textrm{cm}^2$ and 1.0 MV/cm respectively. These capacitor characteristics were inferior to those of the capacitors fabricated on the Si substrate but enough to be used for decoupling capacitors in multilayer package. Roughness Analysis of each layer by AFM demonstrated that the properties of the capacitors fabricated on the polymer film were affected by the surface morphology of the substrate. This substrate effect could be classified into two factors. One is the surface morphology of the polymer film and the other is the surface morphology of the metal bottom electrode determined by the deposition process. Therefore, the control of the two factors is important to obtain improved electrical of capacitors deposited on a polymer film.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.5
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• pp.467-475
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• 2004

ZnO epilayer were synthesized by the pulsed laser deposition(PLD) process on $Al_2$ $O_3$substrate after irradiating the surface of the ZnO sintered pellet by the ArF(193 nm) excimer laser. The epilayers of ZnO were achieved on sapphire(A $l_2$ $O_3$) substrate at a temperature of 400 $^{\circ}C$. The crystalline structure of epilayer was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of ZnO epilayer measured with Hall effect by van der Pauw method are 8.27${\times}$$10^{16}$$cm^{-3}$ and 299 $\textrm{cm}^2$/Vㆍs at 293 K, respectively. The temperature dependence of the energy band gap of the ZnO obtained from the absorption spectra was well described by the Varshni's relation, $E_{g}$(T)= 3.3973 eV - (2.69 ${\times}$ 10$_{-4}$ eV/K) $T^2$(T＋463k). After the as-grown ZnO epilayer was annealed in Zn atmospheres, oxygen and vaccum the origin of point defects of ZnO atmospheres has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{Zn}$ , $V_{o}$ , Z $n_{int}$, and $O_{int}$ obtained by PL measurements were classified as a donors or accepters type. In addition, we concluded that the heat-treatment in the oxygen atmosphere converted ZnO thin films to an optical p-type. Also, we confirmed that vacuum in ZnO/A $l_2$ $O_3$did not form the native defects because vacuum in ZnO thin films existed in the form of stable bonds.s.s.s.

• Nuclear Engineering and Technology
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• v.35 no.1
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• pp.14-24
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• 2003

This work investigates the effects of Cr$_2$O$_3$ and oxygen potential on grain growth and densification of UO$_2$ pellets. Powder mixtures of UO$_2$ and 0.03-0.4wt% Cr$_2$O$_3$ were pressed and sintered in 3 different gas atmospheres: the $H_2O$-to-H$_2$ ratios were 5$\times$10$^{-4}$ , 1$\times$10$^{-2}$ and 3$\times$10$^{-2}$ In the first gas atmosphere the Cr$_2$O$_3$ contents below 0.2 wt% have an insignificant effect on grain size, but the Cr$_2$O$_3$ contents more than 0.3 wt% promote grain growth in the inner zone of a pellet but not in the outer zone. In both the second and third atmospheres, the grain size increases with the Cr$_2$O$_3$ content. With the same level of Cr$_2$O$_3$ content the grain size is larger in the second atmosphere than in the third. Sintering behavior and developed microstructure are discussed in terms of the reduction of C$r^2$O$^3$ to Cr, the dissolution of C$r^2$O$^3$ in UO$_2$, and liquid phase sintering.