• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.386-391
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• 2003

Sing1e crystal $CuAlSe_2$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at $410^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $CuAlSe_2$source at $680^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence(PL) and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $CuAlSe_2$ thin films measured with Hall effect by van der Pauw method are $9.24{\times}10^{16}\;cm^{-3}$ and $295\;cm^2/V{\cdot}\;s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuAlSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;2.8382\;eV\;-\;(8.86\;{\times}\;10^{-4}\;eV/K)T^2/(T\;+\;155K)$. After the as-grown single crystal $CuAlSe_2$ thin films were annealed in Cu-, Se-, and Al-atmospheres, the origin of point defects of single crystal $CuAlSe_2$ thin films has been investigated by PL at 10 K. The native defects of $V_{Cd}$, $V_{Se}$, $Cd_{int}$, and $Se_{int}$ obtained by PL measurements were classified as donors or accepters. And we concluded that the heat-treatment in the Cu-atmosphere converted single crystal $CuAlSe_2$ thin films to an optical n-type. Also, we confirmed that Al in $CuAlSe_2/GaAs$ did not form the native defects because Al in single crystal $CuAlSe_2$ thin films existed in the form of stable bonds.

• 한국전기전자재료학회논문지
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• 제16권10호
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• pp.871-880
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• 2003

Single crystal CuAlSe$_2$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at 410 C with hot wall epitaxy (HWE) system by evaporating CuAlSe$_2$ source at 680 C. The crystalline structure of the single crystal thin films was investigated by the photoluminescence(PL) and double crystal X -ray diffraction (DCXD). The carrier density and mobility of single crystal CuAlSe$_2$ thin films measured with Hall effect by van der Pauw method are 9.24${\times}$10$\^$16/ cm$\^$-3/ and 295 cm$^2$/V $.$ s at 293 K, respectively. The temperature dependence of the energy band gap of the CuAlSe$_2$ obtained from the absorption spectra was well described by the Varshni's relation, Eg(T) = 2.8382 eV - (8.86 ${\times}$ 10$\^$-4/ eV/K)T$^2$/(T + 155K). After the as-grown single crystal CuAlSe$_2$ thin films were annealed in Cu-, Se-, and Al-atmospheres, the origin of point defects of single crystal CuAlSe$_2$ thin films has been investigated by PL at 10 K. The native defects of V$\_$cd/, V$\_$se/, Cd$\_$int/, and Se$\_$int/ obtained by PL measurements were classified as donors or acceptors. And we concluded that the heat-treatment in the Cu-atmosphere converted single crystal CuAlSe$_2$ thin films to an optical n-type. Also, we confirmed that Al in CuAlSe$_2$/GaAs did not form the native defects because Al in single crystal CuAlSe$_2$ thin films existed in the form of stable bonds.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.76-77
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• 2005

Single crystal $CuAlSe_2$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at 410$^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $CuAlSe_2$ source at $680^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence(PL) and double crystal X-ray diffraction (DCXO). The temperature dependence of the energy band gap of the $CuAlSe_2$ obtained from the absorpt ion spectra was wel1 described by the Varshni's relation, $E_g$(T) = 2.8382 eV - ($8.86\times10^{-4}$ eV/H)$T_2$/(T + 155K). After the as-grown single crystal $CuAlSe_2$ thin films were annealed in Cu-, Se-, and Al-atmospheres, the origin of point defects of single crystal $CuAlSe_2$ thin films has been investigated by PL at 10 K. The native defects of $V_{cd}$, $V_{se}$, $Cd_{int}$, and $Se_{int}$ obtained by PL measurements were classified as donors or acceptors. And we concluded that the heat-treatment in the Cu-atmosphere converted single crystal $CuAlSe_2$ thin films to an optical n-type. Also. we confirmed that hi in $CuAlSe_2$/GaAs did not form the native defects because Al in single crystal $CuAlSe_2$ thin films existed in the form of stable bonds.

• Current Photovoltaic Research
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• 제1권2호
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• pp.115-121
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• 2013

ZnO film has been used for CIGS solar cells as a buffer layer as itself or by doping Mg and Sn; ZnO film also has been used as a transparent conducting layer by doping Al or B for solar cells. Since ZnO itself is a host material for many applications it is necessary to understand the electrical and optical properties of ZnO film itself with various preparation conditions. We prepared ZnO films by converting ZnS precursor into ZnO film by thermal annealing. ZnO film was formed at low temperature as low as $500^{\circ}C$ by annealing a ZnS precursor layer in air. In the air annealing, the electrical resistivity decreased monotonically with increasing annealing temperature; the intensity of the green photoluminescence at 505 nm increased up to $750^{\circ}C$ annealing. The electrical resistivity further decreased and the intensity of green emission also increased in reducing atmospheres. The results suggest that deep-level defects originated by oxygen vacancy enhanced green emission, which reduce light transmittance and enhance the recombination of electrons in conduction band and holes in valence. More oxidizing environment is necessary to obtain defect-free ZnO film for higher transparency.

• 동의신경정신과학회지
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• 제7권1호
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• pp.65-75
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• 1996

This paper is for studying stress condition of apprentice doctors who were in Oriental Medical Hospital. This study was done on 35 apprentice doctors who were in Kyungsang University Oriental Medical Hospital and Bulgy Oriental Medical Hospital. The Seven-Minute Stress Test of Thomas E. Sttats and 10 questions which were made by the present writer shows the following results.1. The Body stress scale was the highest point. In order of high percent, this shows Whole scale, Mind scale, Situation scale. 2. In comparison of the stress scale of men and women doctors, all the stress scale of women doctors were higher than men doctors. 3. In comparison of the stress scale of Interne and Resident doctors, Whole and Situation stress scale of Resident doctors were higher than Interne doctors, Body and Mind stress scale of Interne doctors were higher than Resident doctors. 4. The personal relation with other people was harmonious, the worst relation of the other colleague was the administrative staff, the next were nurses, senior apprentice doctors orderly. 5. In order of high percent of stressors, this shows personal relation, many works and troubles of care, the lack of private life, unsatisfactory administration system and equipment, the class system and overbearing atmospheres, education and continuous stress, bad conditions and fatigue, economic problems. 6. In order of high percent of systemic stress diseases, this shows musculo- skeletal disease, nervous disease, digestive disease, neurosis, urinary and genital disorder, opthalomo-otolaryngo disease, immunity disorder and vascular disease. In order of high percent of stress symptom, this show headache, fatigue, shoulder pain, back and leg pain, pantalgia and abdominal pain, diarrhea and dismenorrhea, stiffness of neck dizziness indigestion languor after a meal insomnia, neurasthenia lacking interest constipation menorrhalgia bloodshot eyes otitis media allergy thirst flushing edema. 7. In order of the seven mode of emotions in relation to stress, this shows anger, anxiety, isolation, melancholy, fright, sorrow, terror, overjoy.

• 한국식품과학회지
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• 제35권6호
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• pp.1110-1116
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• 2003

신선 편의가공 양파제품의 적정 포장방법을 탐색하고자 polyolefin계 유연 필름(LDPE, PP)을 이용한 수동 MAP, 20% $O_2/10%\;CO_2/70%\;N_2$ 혼합기체 또는 에틸렌 흡수제를 첨가한 능동 MAP, LDPE 필름으로 감압 포장한 MVP 등의 적용 가능성을 조사하였다. 박피 양파의 포장방법을 달리하여 $10^{\circ}C$에서 28일간 저장하면서 이화학적, 미생물, 관능적 품질변화를 측정하여 개별 품질인자에 대한 포장처리 효과를 검토하였다. 전체적으로 포장방법에 따른 저장중 박피 양파의 표면색, 중량 감소, 미생물 증식은 차이를 분명하게 구분하기 어려웠으나, 외관품질과 부패율 측면에서는 일정한 차이를 식별할 수 있었다. 결과적으로 기체투과성 LDPE 필름에 일정수준의 진공을 적용하여 밀봉 포장한 MVP가 다른 포장구에 비해 상대적으로 박피 양파의 저장품질을 우수하게 유지하는 것으로 확인되었다.

• Journal of Preventive Medicine and Public Health
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• 제35권1호
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• pp.72-75
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• 2002

Objectives : To evaluate the health hazards in the underground storage facilities of ginger roots. Methods : The authors reviewed the emergency rescue records from the Seosan fire department over the period Jan 1, 1996 to Aug 31, 1999. The atmospheres in 3 different underground storage locations were analyzed for $O_2,\;CO_2,\;CO,\;H_2S\;and\;NH_4$. Results : From the emergency records, we were able to identify 20 individuals that had been exposed to occupational hazards in the underground storage facilities. Among these 20 cases, 13 were due to asphyxiation (resulting in f deaths) and 7 were due to falls. In the first atmospheric tests, peformed on Feb 25, 1998, the O2 level inside the underground storage facility, located about $5{\sim}6$ meters below the surface, was 20.6% and the $CO_2$ level was about 1,000 ppm. CO, $H_2S\;and\;NH_4$ were not detected. In the second tests on Jul 6, 1999, measurements of the $O_2$ level at 3 meters below the surface in two different storage locations were 15.3 and 15.1%. And the $O_2$ levels inside the storage facilities were 12.2 and 12.1%. The $CO_2$ level was above 5,000 ppm (beyond upper limits of measurement). CO, $H_2S\;and\;NH_4$ were not detected. Conclusions : We conclude that asphyxiation in the underground storage facilities for ginger roots was not due to the presence of toxic gases such as CO, $H_2S\;and\;NH_4$, but rather the exclusion of oxygen by carbon dioxide was responsible for causing casualties. For the development of a hazard free working environment, safety education as well as improvements in storage methods are needed.

• 한국분말재료학회지
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• 제23권2호
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• pp.136-142
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• 2016

As precursors of cathode materials for lithium ion batteries, $Ni_{1/3}Co_{1/3}Mn_{1/3}(OH)_2$ powders are prepared in a continuously stirred tank reactor via a co-precipitation reaction between aqueous metal sulfates and NaOH in the presence of $NH_4OH$ in air or nitrogen ambient. Calcination of the precursors with $Li_2CO_3$ for 8 h at $1,000^{\circ}C$ in air produces dense spherical cathode materials. The precursors and final powders are characterized by X-ray diffraction (XRD), scanning electron microscopy, particle size analysis, tap density measurement, and thermal gravimetric analysis. The precursor powders obtained in air or nitrogen ambient show XRD patterns identified as $Ni_{1/3}Co_{1/3}Mn_{1/3}(OH)_2$. Regardless of the atmosphere, the final powders exhibit the XRD patterns of $LiNi_{1/3}Co_{1/3}Mn_{1/3}O_2$ (NCM). The precursor powders obtained in air have larger particle size and lower tap density than those obtained in nitrogen ambient. NCM powders show similar tendencies in terms of particle size and tap density. Electrochemical characterization is performed after fabricating a coin cell using NCM as the cathode and Li metal as the anode. The NCM powders from the precursors obtained in air and those from the precursors obtained in nitrogen have similar initial charge/discharge capacities and cycle life. In conclusion, the powders co-precipitated in air can be utilized as precursor materials, replacing those synthesized in the presence of nitrogen injection, which is the usual industrial practice.

• 한국분말재료학회지
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• 제24권5호
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• pp.357-363
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• 2017

In this study, Bi-Sb-Te thermoelectric materials are produced by mechanical alloying (MA) and spark plasma sintering (SPS). To examine the influence of the milling atmosphere on the microstructure and thermo-electric (TE) properties, a p-type Bi-Sb-Te composite powder is mechanically alloyed in the presence of argon and air atmospheres. The oxygen content increases to 55% when the powder is milled in the air atmosphere, compared with argon. All grains are similar in size and uniformly, distributed in both atmospheric sintered samples. The Seebeck coefficient is higher, while the electrical conductivity is lower in the MA (Air) sample due to a low carrier concentration compared to the MA (Ar) sintered sample. The maximum figure of merit (ZT) is 0.91 and 0.82 at 350 K for the MA (Ar) and MA (Air) sintered samples, respectively. The slight enhancement in the ZT value is due to the decrease in the oxygen content during the MA (Ar) process. Moreover, the combination of mechanical alloying and SPS process shows a higher hardness and density values for the sintered samples.

• 한국표면공학회지
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• 제50권4호
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• pp.289-295
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• 2017

Detection of $CO_2$ gas in both indoor and outdoor atmospheres is now becoming an important issue because of greenhouse effect and climate crisis. In this study, gas sensors based on $SnO_2-Cr_2O_3$ composite nanofibers were fabricated by the electrospinning method to detect $CO_2$ gas. The gas sensors showed a response to ppm level of $CO_2$ gas from room temperature to $200^{\circ}C$ while the highest response was observed at $150^{\circ}C$. The gas response is enhanced by the catalytic property of $Cr_2O_3$. Selective $CO_2$ detection is obtained through the chemical reaction of $Cr_2O_3$ to chromium carbonate. All the results suggest the $SnO_2-Cr_2O_3$ composite material is promising for the use of $CO_2$ gas sensors.