• Journal of the Korean institute of surface engineering
• /
• v.43 no.4
• /
• pp.176-179
• /
• 2010

The InAs thin films were grown on GaAs(100) substrate with $2^{\circ}C$ tilted toward [$0\bar{1}\bar{1}$] with different As beam equivalent pressure (BEP) by using molecular beam epitaxy. Growth temperature and thickness of the InAs thin films were $480^{\circ}C$ and 0.5 ${\mu}m$, respectively. We studied the relation between the As BEP and the properties of InAs thin films. The properties of InAs thin films were observed by reflection high-energy electron diffraction (RHEED), optical microscope, and Hall effect. The growth, monitored by RHEED, was produced through an initial 2D (2-dimensional) nucleation mode which was followed by a period of 3D (3-dimensional) island growth mode. Then, the 2D growth recovered after a few minutes and the streak RHEED pattern remained clear till the end of growth. The crystal quality of InAs thin films is dependent strongly on the As BEP. When the As BEP is $3.6{\times}10^{-6}$ Torr, the InAs thin film has a high electron mobility of 10,952 $cm^2/Vs$ at room temperature.

• Proceedings of the KIEE Conference
• /
• 2006.10a
• /
• pp.55-56
• /
• 2006

We investigated the diffraction grating efficiency by the DPSS laser beam wavelength to improve the diffraction efficiency on AsGeSeS & Ag/ AsGeSeS thin film. Diffraction efficiency was obtained from DPSS(532nm)(P:P)polarized laser beam on AsGeSeS, Ag/ AsGeSeS and AsGeSeS/Ag/AsGeSeS thin films. As a result, for the laser beam intensity, 0.24 mW, single AsGeSeS thin film shows the highest value of 0.161% diffraction efficiency at 300 s and for 2.4 mW, it was recorded with the fastest speed of 50 s, which the diffraction grating forming speed is faster than that of 0.24 mW beam. Ag/ AsGeSeS and AsGeSeS/ Ag/ AsGeSeS multi-layered thin film also show the faster grating forming speed at 2.4 mW and higher value of diffraction efficiency at 0.24 mW.

• Korean Journal of Materials Research
• /
• v.14 no.2
• /
• pp.146-151
• /
• 2004

We investigated the effects of high potential barriers on the optical characteristics of InAs quantum dots (QDs) by using photoluminescence (PL) and photoreflectance (PR) spectroscopy. A sample with regular InAs quantum dots on GaAs was grown by molecular beam epitaxy (MBE) as a reference. Another InAs QDs sample was embedded in single AlGaAs barriers. On the other hand, a sample with GaAs/AlGaAs superlattice barriers was adopted for comparison with a sample with a single AlGaAs layer. In results, we found that the emission wavelength of QDs was effectively tailored by using high potential barriers. Also, it was found that the optical properties of a sample with QDs embedded in GaAs/AlGaAs superlattices were better than those of a sample with QDs embedded in a single layer of AlGaAs barriers. We believe that GaAs/AlGaAs superlattice could effectively prevent the generation of defects.

• Journal of the Korean Society of Radiology
• /
• v.12 no.5
• /
• pp.645-650
• /
• 2018

This research aims at measuring images density of according to DAP(dose area product), and suggesting the need to quality control of exposure dose. When tube voltage was fixed as 80 kVp and tube current was set as 1, 25, 50, 80, and 100 mAs, with the increase of DAP from 25 mAs to 50 mAs, the dose also rose 1.88 times as much as before, and with the increase from 50 mAs to 100 mAs, it got 2.05 time higher than before. However, the images density obtained as film grew as much as 48% with the increase from 25 mAs to 50 mAs, and 29% with the increase from 50 mAs to 100 mAs. In addition, it has been found out that the higher the DR images density got from 25 mAs to 50 mAs, the bigger it became by 12%, and that it got bigger by 30% with the increase from 50 mAs to 100 mAs. In other words, the differences in the image density by the increase of the dose with the digital imaging equipment in a proper condition was proved to be less than in the film images. Based on the results of this research, medical institutions using a digital imaging equipment are expected to be able to reduce exposure dose of each region of interest than now through the quality control of radiation dose.

• Journal of the Korean Institute of Navigation
• /
• v.16 no.2
• /
• pp.21-27
• /
• 1992

Shortening the lasing wavelength(particularly below infrared ; the visible region) of laser diodes is very attractive because it can provide a wide range of applications in the fields of optical information, measurement, sensor, the development of medical instrument, and optical communication through plastic fibers. According to the recent researches on the field, InGaAsP/GaAs was suggested as a material for red-light laser. In this study, in order to grow InGaAsP/GaAs epitaxial layer on InGaAsP/GaAs by LPE, we used GaP and InP two phase solution technique for 670nm and 780 nm region, respectively. Through the X-ray diffraction measurement for the epitaxial layer grown from the experiments, we found that the lattice mismatch of $In_{0.46}Ga_{0.54}As_{0.07}P_{0.93}$/GaAs and $In_{0.19}Ga_{0.81}As_{0.62}P_{0.38}$/GaAs was about +0.3% and +0.1%, respectively.

• Proceedings of the KIEE Conference
• /
• 1989.11a
• /
• pp.79-82
• /
• 1989

We studied the epitaxial growth of GaAs/GaAs and GaAs/Si by Laser CVD with 193nm ArF pulsed excimer laser. The source gases of TMGa and AsC13 or TMGa-TMAs adducts are mixed with H2, and photolyzed above the substrate which is heated up to around 300$^{\circ}C$. Then the photolyzed atoms are deposited on the silicon or GaAs substrate. The deposited films are analyzed with ESKA depth profiling and X-ray differaction method, which shows that the films on Si and GaAs are stoichiometric and crystalized at such a low temperature. We show a clear evidence for the epitaxial growth of GaAs on Si or GaAs on GaAs at low temperature by excimer laser CVD.

• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.31A no.12
• /
• pp.38-43
• /
• 1994

GaAs and AlGaAs layers were grown by Molecular Beam Epitaxy (MBE) to fabricate hith performance GaAs MESFETs. Optimum growth temperatures were found to be 600$^{\circ}C$ from their Hall measurement data. MESFETs with the gate legth of 1${\mu}$m and the gate width of 100.mu.m were fabricated on the MBE-grown GaAs layters which has i-GaAs buffer layer and characterized. Knee volgate and mazimum transconductance of the devices were 1V, 224mS/mm, respectively. Cut-off frequency at on-wafer measuring pattern was measured to be 18 GHz. The MESFET with the 1${\mu}$m -thick i-Al$_{0.3}Ga_{0.7}$As buffer layer between nactive and i-GaAs was fabricated on order to reduce the leakage current which flows through the i-GaAs buffer layer. Its output resistance was 2.26 k${\Omega}$.mm which increased by a factor of 15 compared with the MESFET without i-Al$_{0.3}Ga_{0.7}$As buffer layer.

• Journal of the Korean Vacuum Society
• /
• v.15 no.3
• /
• pp.280-286
• /
• 2006

A distributed Bragg reflector (DBR) for the application of $1.3{\mu}m$ vertical cavity surface emitting laser (VCSEL) has grown by digital-alloy AlGaAs layer using the molecular beam epitaxy (MBE) method. The measured reflection spectra of the digital-alloy AlGaAs/GaAs DBR have uniformity in 0.35% over the 1/4 of 3-inch wafer. Furthermore, the TEM image showed that the composition and the thickness of the digital-alloy AlGaAs layer in AlGaAs/GaAs DBR was not affected by the temperature distribution over the wafer whole surface. Therefore, the digital-alloy AlGaAs/GaAs DBR can be used to get higher yield of VCSEL with the active medium of InAs quantum dots whose gain is inhomogeneously broadened.

• Journal of the Korean Vacuum Society
• /
• v.7 no.2
• /
• pp.104-111
• /
• 1998

The InGaAs/InP quantum wells(QWs) were grown by low pressure metalorganic chemical vapor deposition and the effects of growth interruption steps on their interfacial structures were investigated by measuring photoluminescence spectra. When InP or InGaAs surface was treated under the same group V ambient, the full width at half maximum (FWHM) of the QW peak increased possibly due to the incorporation of impurities during the growth interruption time. When InP surface was treated under $AsH_3$, howerer, the PL peak showed red-shift due to the As-P exchange reaction and the change of FWHM was not remarkable. The effective thickness of InAs interfacial layer formed during $AsH_3$, treatment on the InP surface was calculated to be 1~2 monolayers. In the case of InGaAs treatment under $PH_3$, the PL peak energy and the FWHM increasied. This results suggest that $PH_3$ treatment on the InGaAs surface suppresses the incorporation of As into the subsequent InP layer and the local replacement of As by P occurs simultaneously.

• Journal of Korean Society of Environmental Engineers
• /
• v.28 no.7
• /
• pp.731-737
• /
• 2006

Four well-characterized soils collected from A- and B-horizon in the Department of Energy Oak Ridge Reservation in USA, mainly distributed with Inceptisol(Inc) and Ultisol(Ult) soils, were used in this work. The bioaccessibility of arsenic as well as oxidation phenomena of As(III) was investigated with soils spiked with As(III) and As(V) using a physiologically based extraction test(PBET) at pH 1.5 and 1:100 soil to solution ratio. Also effect of aging time on the bioaccessibility of arsenic was investigated over the 6 months. After 48 hours(fresh) contacting As(V) solution with soils, all soils rapidly and strongly sequestrated As(V), especially Ult-B. However, little sequestration was observed after 3-months. When As(III) was spiked on the same soils, a great portion of As(III) was oxidized to As(V) after 48 hrs, especially Inc-A and Ult-A soils, which is strongly related with Mn content in soils. By using As(III)-spiked soils, much reduced bioaccessibility as total arsenic was observed from Inc-B and Ult-B soils over the 6 months aging time compared to that from Inc-A and Ult-A soils. This result can be explained by the continuous sequestration of As(V), produced from oxidation of As(III), onto Inc-B and Ult-B soils having much amount of iron. The trend of As(III) sequestration over six months aging time was quite similar with that of As(V) sequestration.