• 한국염색가공학회지
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• 제19권5호
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• pp.30-36
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• 2007

Cypermethrin-containing polyurea microcapsules were prepared by interfacial polymerization using aromatic 2,4-toluene diisocyanate(TDI) and Ethylene diamine(EDA) as wall forming materials. The effects of the protective colloids of polyvinylalcohol(PVA) and gelatin were investigated through experimentation. The mean size of the polyurea microcapsules was smaller and the surface morphology of the PVA was much smoother than gelatin. In addition the release behavior was much more controlled and better sustained. As the concentration of protective colloid increased, the wall membrane of the polyurea microcapsules became more stable, the thermal stability of the wall membrane increased, the mean particle size became smaller, and the particle distribution was more uniform. The release behavior of the core material changed according to the concentration. As the gelatin concentration was increased, a more controlled and sustained release behavior was observed. However, in the case of PVA, the increase of PVA concentration lead to a more rapid release rate.

• Macromolecular Research
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• 제8권1호
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• pp.19-25
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• 2000

Aromatic diamine monomers containing allylic ester linkage, 1,5-bis(4-aminobenzoate)-1,2,3,4-tetrahydronaphthalene (4-DABTN) and 1,5-bis(3-amin obenzoate)-1,2,3,4-tetrahydronaphthalene (3-DABTN) were synthesized through the reaction of 1,5-dihydroxy-1,2,3,4-tetrahydronaphthalene and 4- or 3-nitrobenzoly chloride. By the reaction of these diamines with pyromellitic dianhydride (PMDA) or 4,4-(hexafluoroisopropylidene)diphthalic anhydride (6FDA), poly(amic acid)s were obtained. The inherent viscosities of the poly(amic acid)s were between 0.55 and 1.31 dL/g. The poly(amic acid)s were converted to polyimides by chemical imidization. The thermogravimetric analysis (TGA) thermograms of these polyimides showed temperatures of 5% weight loss between 323 and 389$^{\circ}C$ in nitrogen atmosphere. The model compound ,1,5-bis (4-nitrobenzoate)-1,2,3,4-tetrahydronaphthalene (4-DNBTN), was decomposed to 4-nitrobenzoic acid and 5-(4-nitrobenzoate)-3,4-dihydronaphthalene upon addition of CF$_3$COOH.

• 공업화학
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• 제10권7호
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• pp.1041-1045
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• 1999

세 가지 종류의 방향족 다이안하이드라이드(6FDA, BTDA, PMDA)와 polydimethylsiloxane(SIDA, 평균 분자량 800)을 단독 다이아민으로 하여 축중합반응에 의하여 폴리실록산이미드(PSI) 막을 제조하였다. 이들은 모두 실록산 30~40 wt % 함유하고 있는 고무상의 고분자로서 낮은 밀도, 높은 비자유부피, 그리고 낮은 표면에너지를 가지고 있었다. 제조된 PSI막을 0.05 wt %의 4가지 혼합용매(ethyl acetate, methylene chloride, trichloroethylene, toluene)에 대해 투과증발 특성을 알아본 결과 이들은 유기용매의 소수성 경향이 증가할수록 높은 선택도와 투과도를 보였다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.885-888
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• 2004

We have prepared and investigated the properties of photoinitiator-free photosensitive polyimide gate insulatos for organic thin-film transistors (OTFTs). The precursor was prepared from a dianhydride, 3,3',4,4'-Benzophenone tetracarboxylic dianhydride (BTDA) and novel aromatic diamine, 7-(3,5-diaminobenzoyloxy) coumarine (DA-CM). Photo-patternability of the polyimide precursor film and surface morphology of the films before and after photo-patterning process were investigated and negative pattern with a resolution of 50 ${\mu}m$ was obtained nicely. In addition, we have fabricated OTFTs with pentacene and photosensitive polyimide as a semiconductor and a gate insulator; respectively. According to the device geometry, the ${\mu}$, current modulation ratio and subthreshold swing of the devices were around 0.2${\sim}$0.4 $cm^2$/Vs, more than $10^5$ and around 3${\sim}$5 V/dec, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 추계학술대회 논문집
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• pp.53-56
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• 1998

Electroluminescent(EL) devices based on organic materials have been of great interest due to their possible applications for large-area flat-panel displays, where they are attractive because of their capability of multicolor emission, and low operation voltage. In this study, glass substrate/ITO/Eu(TTA)$_3$(Phen)/Al(A), glass substrate/ITO/TPD/Eu(TTA)$_3$(p-hen)/Al(B) and glass substrate/ITO/TPD/Eu(TTA)$_3$(phen)/AlQ$_3$/Al(C) structures were fabricated by vacuum evaporation method. where aromatic diamine(TPD) was used as a hole transporting material, Eu(TTA)$_3$(phen) as an emitting material. and tris(8-hydroxyquinoline)Aluminum(AlQ$_3$) as an electron transporting layer. Electroluminescent(EL) and I-V characteristics of Eu(TTA)$_3$(Phen) with a various thickness were investigated. This structure shows the red EL spectrum, which is almost the same as the PL spectrum of Eu(TTA)$_3$(phen). I-V characteristics of this structure show that turn-on voltage was 9V and current density was 0.01A/$\textrm{cm}^2$ at a dc operation voltage of 9V. Electrical transporting phenomena of these structures was explained using the trapped- charge-limited current model with I-V characteristics.

• Bulletin of the Korean Chemical Society
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• 제35권3호
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• pp.929-932
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• 2014

We explored interfacial electronic structures in indium tin oxide (ITO)/DNTPD/N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4'-diamine (NPB) layer stack in an OLED to clarify the real role of an aromatic amine-based hole injection layer, DNTPD. A hole injection barrier at the ITO/DNTPD interface is lowered by 0.20 eV but a new hole barrier of 0.36 eV at the DNTPD/NPB is created. The new barrier at the DNTPD/NPB interface and its higher bulk resistance serve as hole retardation, and thus those cause the operation voltage for the ITO/DNTPD/NPB to increase. However, it improves current efficiency through balancing holes and electrons in the emitting layer.

• 한국전기전자재료학회논문지
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• 제11권10호
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• pp.871-877
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• 1998

Electroluminescent(EL) devices based on organic materials have been of great interest due to their possible applications for large-area flat-panel displays, where they are attractive because of their capability of multicolor emission, and low operation voltage. In this study, glass substrate/ITO/Eu(TTA)$_3$(phen)/Al, glass substrate/ITO/Eu(TTA)$_3$(phen)/Al and glass substrate/ITO/Eu(TTA)$_3$(phen)/AlQ$_3$/Al structures were fabricated by vacuum evaporation method, where aromatic diamine(TPD) was used as a hole transporting material, Eu(TTA)$_3$(phen) as an emitting material, and Tris(8-hydroxyquinoline) aluminu-m(AlQ$_3$) as an electron transporting layer. Electrolumescent(EL) and I-V characteristics of Eu(TTA)$_3$-(-phen) were investigated. These structures show the red EL spectra, which are almost the same at the PL spectrum of Eu(TTA)$_3$(phen). I-V characteristics of this structure show that turn-on voltage was 9V and current density was 0.01A/㎤ at a operation voltage of 9V. Electrical transporting phenomena of these structures were explained using the trapped-charge-limited current model with I-V characteristics.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 춘계학술대회 논문집
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• pp.317-320
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• 1998

Electroluminescent(EL) devices based on organic materials have been of great interest due to their possible applications for large-area flat-panel displays, where they are attractive because of their capability of multicolor emission, and low operation voltage. In this study, glass substrate/ITO/Eu(TTA)$_3$(Phen)/Al(A), glass substrate/ITO/TPD/Eu(TTA)$_3$(phen)/Al(B) aNd glass substrate/ITO/TPD/Eu(TTA)$_3$(Phen)/A1Q$_3$/Al (C) structures were fabricated by vacuum evaporation method, where aromatic diamine(TPD) was used as a hole transporting material, Eu(TTA)$_3$(phen) as an emitting material, and tris(8-hydroxyquinoline) Aluminum (AlQ$_3$) as an electron transporting layer. Etectroluminescent(EL) and I-V characteristics of Eu(TTA)$_3$(phen) with a various thickness were investigated. This structure shows the red EL spectrum, which is almost the same as the PL spectrum of Eu(TTA)$_3$(phen). I-V characteristics of this structure show that turn-on voltage was 9V and current density was 0.01A/㎤ at a dc operation voltage of 9V. Electrical transporting phenomena of these structures was explained using the trapped-charge-limited current model with I-V characteristics.

• Advances in nano research
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• 제14권4호
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• pp.355-362
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• 2023

Physical exercise, especially intense exercise and high intensity interval training (HIIT) by trampoline, can lead to muscle injuries. These effects can be reduced with intelligent products made of nanocomposite materials. Most of these nanocomposites are polymers reinforced with silicon dioxide, alumina, and titanium dioxide nanoparticles. This study presents a polymer nanocomposite reinforced with silica. As a result of the rapid reaction between tetraethyl orthosilicate and ammonia in the presence of citric acid and other agents, silica nanostructures were synthesized. By substituting bis (4-amino phenoxy) phenyl-triptycene in N, N-dimethylformamide with potassium carbonate, followed by catalytic reduction with hydrazine and Pd/C, the diamine monomer bis (4-amino phenoxy) phenyl-triptycene is prepared. We synthesized a new polyaromatic (imide) with triptycene unit by sol-gel method from aromatic diamines and dianhydride using pyridine as a condensation reagent in NMP. PI readily dissolves in solvents and forms robust and tough polymer films in situ. The FTIR and NMR techniques were used to determine the effects of SiO₂ on the sol-gel process and the structure of the synthesized nanocomposites. By using a simultaneous thermal analysis (DTA-TG) method, the appropriate thermal operation temperature was also determined. Through SEM analysis, the structure, shape, size, and specific surface area of pores were determined. Analysis of XRD results is used to determine how SiO₂ affects the crystallization of phases and the activation energy of crystallization.

• 폴리머
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• 제34권3호
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• pp.202-209
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• 2010

열적 안정성과 기계적 강도에서 우수한 장점을 지니고 있는 메타계 aramid segment와 제막 특성이 우수하고 내가수분해성이 우수한 sulfone segment로 이루어진 공중합체를 이용하여 연료 전지용 막으로서의 응용가능성을 연구하였다. 아라미드 고분자의 solubility와 processability를 향상시키기 위해 아민기를 갖는 sulfonated ether sulfone단량체와 m-phenylene diamine 그리고 isophthaloyl chloride를 반응시켜 아민으로 말단화된 랜덤공중합체를 합성하고 이것을 acryloyl chloride와 반응시켜 양 말단에 2중 결합이 도입된 고분자전구체를 합성하였다. 얻어진 고분자전구체는 열 가교를 통해 고분자 전해질 막으로 제조되었으며, 전구체의 합성을 비롯한 각 단계의 반응은 $^1H$ NMR, FTIR, 및 적정에 의하여 확인되었다. 얻어진 전해질막은 이온교환용량과 함수율, 수소이온전도도, 열적 특성 등이 측정되었으며, sulfonated ether sulfone 단량체의 함유량이 증가할수록 이온교환용량, 함수율, 수소이온전도도가 증가하는 것이 관찰되었다. Sulfonic acid sulfone segment를 30 몰%로 갖는 고분자 전해질 막의 경우 이온교환용량이 1.57 meq/g, 함수율은 44 wt% 이하의 수치를 보였으며, 가장 높은 수소이온전도도의 값은 상대습도 100%, $25^{\circ}C$에서 $3.93{\times}10^{-2}S/cm$이었다.