• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.4
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• pp.327-333
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• 1998

The influence of slow cooling and annealing time in $O_2$in MPEG process on $J_c$ was investigated. From the measurement of $J_c$,SEM and XRD, it was observed that the critical current density was related with the slow cooling time and annealing time in $O_2$. The value of $J_c$ was the highest at slow cooling time of 40 hour. And also, the value of $J_c$ along the annealing time in $O_2$in the case of the slow cooling time of 40 hours was inclined to increase with annealing time. Consequently, it can be suggested that proper slow cooling time and annealing time after slow cooling in MPMG process be important to improve the critical characteristics.

• Transactions on Electrical and Electronic Materials
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• v.16 no.2
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• pp.99-102
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• 2015

Thin film transistors (TFTs) with amorphous 2 wt% silicon-doped zinc tin oxide (a-2SZTO) channel layer were fabricated using an RF magnetron sputtering system, and the effect of post-annealing treatment time on the structural and electrical properties of a-2SZTO systems was investigated. It is well known that Si can effectively reduce the generation of oxygen vacancies. However, it is interesting to note that prolonged annealing could have a bad effect on the roughness of a-2SZTO systems, since the roughness of a-2SZTO thin films increases in proportion to the thermal annealing treatment time. Thermal annealing can control the electrical characteristics of amorphous oxide semiconductor (AOS) TFTs. It was observed herein that prolonged annealing treatment can cause bumpy roughness, which led to increase of the contact resistance between the electrode and channel. Thus, it was confirmed that deterioration of the electrical characteristics could occur due to prolonged annealing. The longer annealing time also decreased the field effect mobility. The a-2SZTO TFTs annealed at 500℃ for 2 hours displayed the mobility of 2.17 cm²/Vs. As the electrical characteristics of a-2SZTO annealed at a fixed temperature for long periods were deteriorated, careful optimization of the annealing conditions for a-2SZTO, in terms of time, should be carried out to achieve better performance.

• Tribology and Lubricants
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• v.37 no.2
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• pp.62-70
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• 2021

The problem with intermetallics coating using the heat of molten casting is that the heat generated during combustion synthesis dissolves the coating and the substrate metal. This study investigates whether pre-annealing before synthesis can control the reaction heat, with the aim of Ni₃Al coating on the casting surface. Therefore, the effects of the annealing temperature and time on the combustion synthesis behavior of the powder compact of Ni-25at%Al after annealing were investigated. As results, the reaction heat when synthesized decreased as the annealing temperature was high and the annealing time was longer. This was attributed to the fact that Al was diffused to Ni particles during low temperature annealing and intermediate Ni-Al compounds were formed during high temperature annealing. After combustion synthesis, however, it was found that their microstructures were almost identical except for the amount of intermediate intermetallics. Furthermore, an annealing temperature above 450℃, at which intermediate compounds begin to form, is needed to prevent the dissolving problem during synthesizing. The intermetallics synthesized after annealing at higher temperature and prolonger annealing time showed a good wear resistance. This might be because much intermediate intermetallics of high hardness were remained in the microstructure.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 1999.10a
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• pp.530-535
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• 1999

In recently, annealing process of cold rolled sheet tend to change to continuous annealing process for improving quality, saving yield. In the meantime as demand for various kind and small lot of products has been increasing, batch annealing has been appreciated for its small restriction for the operation. So, we tested on the effect for the proper heating temperatures, heating time of cycle, cooling time and total cycle time in this annealing process of hi tensile strength steel for automobile. As a result of several investigation. we confirmed for the following characteristics; In this process, we knew that 68$0^{\circ}C$ is suitable for this heating temp. cycle heating time of 38 Hr, cooling time of 31 Hr and total cycle time of 70 Hr. Still more, we could know that it is proper for cold rolling before annealing to be managed by 7 pass because of the act on high pressure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.185-188
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• 1997

The influence of slow cooling and annealing time in $O_2$ during melting and growth step in MPMG process on J$_{c}$ was investigated. Through the measurement of J$_{c}$ SEM and XRD, it can be observed that the critical characteristics were related with the slow cooling time and annealing time in 02 for melting and growth step of MPMG process. The distribution of critical current density with slow cooling time was the porabolic form and the value of J. was the highest at the 40 hour slow cooling time. And also, the value of J$_{c}$, along the annealing time in $O_2$ in the case of the slow cooling time 40 hour was inclined to increase with annealing time. Consequently, it can be suggested that proper slow cooling titre and annealing time along slow cooling in MPMG process be important to improve the critical characteristics.stics.

• Journal of Advanced Marine Engineering and Technology
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• v.18 no.1
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• pp.114-122
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• 1994

A cold temperature control system for the BAF(batch annealing furnace) has been established in order to reduce energy consumption to imrpove productivity and stabilize the properties of products. Therefore we confirmed a relation between annealing cycle time and atmospheric gas, changing annealing cycle time according to BAF temperature with time during heating and actual temperature measurements cold spot during soaking. The results of the temperature variation effect on the batch annealing are as follows. 1) Cooling rate is increasing gradually with increasing atmospheric gas flow, but heating rate is hardly increasing without atmospheric gas component. Heating time is reduced to one half with increasing atmospheric gas flow rate and changing of atmospheric gas component from HNx to Ax gas and annealing cycle time is reduce to 2.7 times. 2) With enlarging the difference between furnace temperature and soaking temperature at the HNx BAF, heating time becomes short, but cooling time is indifferent. 3) If temperature difference of 300.deg. C in the temperature change of cold spot according to the annealing cycle control temperature, Hi-CON/H2BAF is interchanging at each other at 26hours, but HNxBAF at 50 hours. 4) Soaking time at batch annealing cycle determination is made a decision by the input coil width, and soaking time for quality homogenization of 1219 mm width coil must be 2.5 hours longer then that of 914mm width coil for the same coil weight at Hi-CON/H2BAF. But, it is necessary to make 2 hours longer at HNxBAF.

• Applied Science and Convergence Technology
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• v.23 no.6
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• pp.366-370
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• 2014

ZnO:Al transparent conductive films were deposited on glass substrates by RF magnetron sputtering technique and annealed by rapid thermal annealing system. The influence of annealing time on the structural, electrical, and optical properties of ZnO:Al thin films was investigated by atomic force microscopy, X-ray diffraction, Hall method and optical transmission spectroscopy. As the annealing time increases from 0 to 5 min, the crystallinity is improved, the root main square surface roughness is decreased and the sheet resistance is decreased. The lowest sheet resistance of ZnO:Al thin film is 90 ohm/sq. The reduction of sheet resistance is caused by increasing carrier concentration due to substituent Al ion. All films are transparent up to 80% in the visible wavelength range and the adsorption edge is a blue-shift due to Burstein-Moss effect with increasing annealing time.

• Bulletin of the Korean Chemical Society
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• v.34 no.11
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• pp.3312-3316
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• 2013

Single crystals of hexagonal graphenes were successfully grown on Cu foils using the atmospheric pressure chemical vapor deposition (CVD) method. We investigated the effects of reaction parameters, such as the growth temperature and annealing time, on the size, coverage, and density of graphene domains grown over Cu foil. The mean size of the graphene domains increased significantly with increases in both the growth temperature and annealing time, and similar phenomena were observed in graphene domains grown by low pressure CVD over Cu foil. From the comparison of micro Raman spectroscopy in the graphene films grown with different annealing times, we found that the nucleation and growth of the domains were strongly dependent on the annealing time and growth temperature. Therefore, we confirmed that when reaction time was same, the number of layers and the degree of defects in the synthesized graphene films both decreased as the annealing time increased.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.63-63
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• 1999

The stability of hydrogenated amorphous silicon (a-Si:H) films under the light soaking are very important since the applications of a-Si:H films are solar cells, color sensors, photosensors, and thin film transistors(TFTs). We found the changes of the electric conductivity and the conductivity activation energy (Ea) of a-Si:H films by argon radical annealing. The deposition rate of a-Si:H films depends on the argon radical annealing time. The optical band gap and the hydrogen contents in the a-Si:H films are changes along the argon radical annealing time. We will discuss the microscopic processes of argon radical annealing in a-si:H films.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.346.2-346.2
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• 2016

The rear side contact recombination in the crystalline silicon solar cell could be reduced by back surface field. We formed polycrystalline silicon as a back surface field through crystallization of amorphous silicon. A thin silicon oxide applied to the passivation layer. We used quasi-steady-state photoconductance measurement to analyze electrical properties with various annealing condition. And, blister formed on surface of wafer during the annealing process. We observed the blister after varied annealing process with wafer of various surface. Shape and density of blister is influenced by various annealing temperature and process time. As the annealing temperature became higher, the average diameter of blister is decreased and total number of blister is increased. The sample with the $600^{\circ}C$ annealing temperature and 1 min annealing time exhibited the highest implied open circuit voltage and lifetime. We predicted that the various shape and density of blister affects the lifetime and implied open circuit voltage.