• 한국전기전자재료학회논문지
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• 제33권2호
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• pp.147-150
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• 2020

Relatively pure YBCO was first synthesized by heating a mixture of metal carbonates at temperatures between 1,000 and 1,300 K, resulting in the reaction: 4BaCO₃+Y₂(CO₃)₃+6CuCO₃+(1/2_-x)O₂ → 2YBa₂Cu₃O_7-x+1/3CO₂. Modern syntheses of YBCO use the corresponding oxides and nitrates. The superconducting properties of YBa₂Cu₃O_7-x are sensitive to the value of x, i.e., its oxygen content. Only those materials with 0≤x≤0.65 are superconducting below Tc, and when x ~ 0.07, the material superconducts at the highest temperature, i.e., 95 K, or in the highest magnetic fields, i.e., 120 T and 250 T when B is perpendicular and parallel to the CuO₂ planes, respectively. In addition to being sensitive to the stoichiometry of oxygen, the properties of YBCO are influenced by the crystallization methods applied. YBCO is a crystalline material, and the best superconductive properties are obtained when crystal grain boundaries are aligned by careful control of annealing and quenching temperature rates. However, these alternative methods still require careful sintering to produce a quality product. New possibilities have arisen since the discovery of trifluoroacetic acid, a source of fluorine that prevents the formation of undesired barium carbonate (BaCO₃). This route lowers the temperature necessary to obtain the correct phase at around 700℃. This, together with the lack of dependence on vacuum, makes this method a very promising way to achieve a scalable YBCO bulk.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 유기절연재료 전자세라믹 방전플라즈마 일렉트렛트 및 응용기술
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• pp.47-52
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• 2002

A processing method is developed for preparing sol-gel derived $Pb(Zr_{1-x}Ti_x)O_3$ (x=0.5) thin films on Pt-Ir($Pt_{80}Ir_{20}$)-alloy substrates. The as-deposited layer was dried on a plate in air at $70^{\circ}C$. And then it was baked at $1500^{\circ}C$, annealed at $450^{\circ}C$ and finally annealed for crystallization at various temperatures ranging from $580^{\circ}C$ to $700^{\circ}C$ for 1hour in a tube furnace. The thickness of the annealed film with three layers was $0.3{\mu}m$. Crystalline properties and surface morphology were examined using X-ray diffractometer (XRD). Electrical properties of the films such as dielectric constant, C-V, leakage current density were measured under different annealing temperature. The PZT thin film which was crystallized at $600^{\circ}C$ for 60minutes showed the best structural and electrical dielectric constant is 577. C-V measurement show that $700^{\circ}C$ sample has window memory volt of 2.5V and good capacitance for bias volts. Leakage current density of every sample show $10^{-8}A/cm^2$ r below and breakdown voltage(Vb) is that 25volts.

• 한국전기전자재료학회논문지
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• 제13권1호
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• pp.13-20
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• 2000

In this paper, we demonstrated an analytical description method of forward votage drop and reverse leakage current of the junction barrier controlled schottky rectifier with linearly graded junction and abrupt junction models. In this case, the vertical depths of device are 1[${\mu}{\textrm}{m}$] and 2[${\mu}{\textrm}{m}$], respectively. Through ion implantation and annealing process, we obtain the data of lateral and depth from implanted 2-dimensional profiles. Also we applied these data to models that indicate the change of depletion each on linearly-graded and abrupt juction as the forward and revers bias. After applied depletion changes to electric characteristics of JBS rectifiers, we calculated the forward I-V, the reverse leakage current and temperatures vs. power dissipations according to each junction. When we compared the rectifier with calculated and measured data, from the calculated results, forward votage drop with linearly graded junction is lower than that of abrupt junction and reverse leakage current with linearly graded junction is lower(≒1$\times$10\ulcorner times) than that of abrupt junction. Also, the power dissipations according to different juction depth(1[${\mu}{\textrm}{m}$], 2[${\mu}{\textrm}{m}$]) of device are calculated. Seeing the calculated results, we confirmed it from analytic model that the rectifier with linearly graded junction retained a low power dissipation up to 600[$^{\circ}C$] in comparison with the rectifier with abrupt junction.

• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 2004년도 추계학술대회논문집
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• pp.211-214
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• 2004

적절한 가공조건을 통하여, 중 탄소강에서 SIDT를 적용하여 페라이트-시멘타이트 미세조직이 압연 직후에 얻어졌다. 또한 이와 같은 조건은 압하온도 $690^{\circ}C$, 높이 감소율 $70\%$ (변형량 1.2) 및 변형율 속도 1/s에서 가공하였을 때 얻어졌으며, 가공 직후 $730^{\circ}C$로 승온하여 약 30분간 유지 후 서냉한 조건에서 매우 연한 미세조직이 얻어짐을 알 수 있었다. 이는 기존 20 시간 이상의 구상화 열처리에 비해 매우 짧은 시간이며, 구상화 열처리를 통한 경험한 미세조직과 유사한 특성을 나타낼 것으로 예상된다.

• 한국진공학회지
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• 제12권3호
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• pp.174-181
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• 2003

본 논문은 탄탈 확산 방지막의 증착시 음의 기판 바이어스에 의한 탄탈막의 특성변화와 열적 안정성에 대해서 고찰하였다. 기판 바이어스를 걸지 않은 경우, 탄탈막은 원주형 모양의 결정 성장을 보이는 주상구조와 250 $\mu\Omega$cm의 높은 비저항값을 보였으나, 기판 바이어스를 걸어줌에 파라서 주상구조가 아닌 치밀한 미세구조와 표면이 평탄한 막이 형성되었고 비저항값도 현저히 감소되었으며, 특히 -125 V에서 증착된 탄탈막은 비저항값이 약 40 $\mu\Omega$cm로 이는 탄탈 벌크의 저항값 (13 $\mu\Omega$cm)에 근접한 값임을 알 수 있었다. 또한, 탄탈 확산 방지막의 열적 안정성에 대해서도, 기판 바이어스를 걸지 않은 탄탈막의 경우 $400^{\circ}C$에서 구리와 실리콘의 반응에 의해 비저항 값이 크게 증가한 결과에 비해, 기판 바이어스에 의해 증착된 탄탈막의 경우 $600^{\circ}C$까지 확산 방지막의 효과를 유지하고 있는 것으로 관찰되었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.255-255
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• 2011

Zinc oxide based thin films have been extensively studied in recent several years because they have very interesting properties and zinc oxide is non-poisonous, abundant and cheap material. ZnO films are employed in different applications like transparent conductive layers in solar cells, protective coatings and so on. Wide industrial application of the ZnO films requires of development of cheap, effective and scalable technology. Typically used technologies don't completely satisfy the industrial requirements. In the present work, we studied effect of the deposition parameters on the structure and properties of ZnO films deposited by DC arc plasmatron. The varied parameters were gas flow rates, precursor composition, substrate temperature and post-deposition annealing temperature. Vapor of Zinc acetylacetone was used as source materials, oxygen was used as working gas and argon was used as the cathode protective gas and a transport gas for the vapor. The plasmatron power was varied in the range of 700-1500 watts. Flow rate of the gases and substrate temperature rate were varied in the wide range to optimize the properties of the deposited coatings. After deposition films were annealed in the hydrogen atmosphere in the wide range of temperatures. Structure of coatings was investigated using XRD and SEM. Chemical composition was analyzed using x-ray photoelectron spectroscopy. Sheet conductivity was measured by 4-point probe method. Optical properties of the transparent ZnO-based coatings were studied by the spectroscopy. It was shown that deposition by a DC Arc plasmatron can be used for low-cost production of zinc oxide films with good optical and electrical properties. Increasing of the oxygen content in the gas mixture during deposition allow to obtain high-resistive protective and insulation coatings with high adhesion to the metallic surface.

• 열처리공학회지
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• 제9권1호
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• pp.1-11
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• 1996

Mechanical alloying is an effective process to finely distribute inert dispersoids in an Al-TM(TM is a transition metal) system. It has been considered that high melting point aluminides are formed by precipitation from supersaturated Al(Ti) powder. This analysis is based on the fact that much higher content of TM than the solubioity can be dissolved in alpha aluminum during the high energy ball milling. Thus, decomposition behavior of Ti in the Al(Ti) was considered very important. But it is confirmed that the higher portion of Ti than Al(Ti) solid solution is existed as nano-sized Ti particles in the MA powders by high energy ball nilling from the XRD spectrum and TEM analysis in this study. Therefore, the role of undissolved TM particles affect the formation of aluminides should be suitably considered. In this study, we present experimental observation on the formation of $Al_3Ti$ fron mechanical alloyed Al-Ti alloys in the hyperperitectic region. This study showed that, in the mechanically alloyed Al-20wt%Ti specimen, intermediate phase of cubic $Al_3Ti$ and tetragonal $Al_{24}Ti_8$ formed at $300{\sim}400^{\circ}C$ and $400{\sim}500^{\circ}C$, respectively, before the MA state reaches to equilibrium at higher temperatures. The formation behavior of $Ll_2-Al_3Ti$ is interpreted by interdiffusion of Al and Ti in solid state based on the fact that large amount of nano-sized Ti particles exist in the milled powder. Present analysis indicated undissolved Ti particles of nanosize should have played an important role initiation the formation of $Al_3Ti$ phase during annealing.

• 열처리공학회지
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• 제21권1호
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• pp.20-25
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• 2008

Structural studies have been performed on precipitation hardening and microstructural variations found in Ti-Al-Cr ternary $L1_0$- and $L1_2$-phase alloys using transmission electron microscopy. Both the $L1_0$ and $L1_2$ phase alloys harden by aging at 973 K after solution annealing at higher temperatures. The amount of age hardening of the $L1_2$ phase alloy is larger than that of the $L1_0$ phase alloy. The phase separation between $L1_0$ and $L1_2$ phase have not been observed by aging at 973 K. But $Al_2Ti$ was formed in each matrix alloy during aging. The crystal structure of the $Al_2Ti$ phase is a $Ga_2Zr$ type in the $L1_0$ and a $Ga_2Hf$ type in the $L1_2$ phase, respectively. At the beginning of aging the fine coherent cuboidal $Al_2Ti$-phase are formed in the $L1_0$ phase. By further aging, two variants of $Al_2Ti$ precipitates grow along the two {110} habit planes. On the other hand, in the $L1_2$ phase, the $Al_2Ti$ phase forms on the {100} planes of the $L1_2$ matrix lattice. After prolonged aging the precipitates are rearranged along a preferential direction of the matrix lattice and form a domain consisting of only one variant. It is suggested that the precipitation of $Al_2Ti$ in each matrix alloy occurs to form a morphology which efficiently relaxes the elastic strain between precipitate and matrix lattices.

• Journal of Microbiology and Biotechnology
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• 제15권3호
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• pp.502-509
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• 2005

Sexual reproduction plays an important role in the biology and epidemiology of oomycete plant pathogens such as the heterothallic species Phytophthora infestans. Recent worldwide dispersal of A2 mating type strains of P. infestans resulted in increased virulence, gene transfer, and genetic variation, creating new challenges for disease management. To develop a genetic assay for mating type identification in P. infestans, we used the Amplified Fragment Length Polymorphism (AFLP) technique. The primer combination E+AT/M+CTA detected a fragment specific to A1 mating type (Mat-A1) of P. infestans. This fragment was cloned and sequenced, and a pair of primers (INF-1, INF-2) were designed and used to differentiate P. infestans Mat-A1 from Mat-A2 strains. The Mat A1-specific fragment was detected using Southern blot analysis of PCR products amplified with primers INF-1 and INF-2 from genomic DNA of 14 P. infestans Mat-A1 strains, but not 13 P. infestans Mat-A2 strains or 8 other isolates representing several Phytophthora spp. Southern blot analysis of genomic DNAs of P. infestans isolates revealed a 1.6 kb restriction enzyme (EcoRI, BamHI, AvaI)-fragment only in Mat-A1 strains. The A1 mating type-specific primers amplified a unique band under stringent annealing temperatures of $63^{\circ}C-64^{\circ}C$, suggesting that this PCR assay could be developed into a useful method for mating type determination of P. infestans in field material.

• 한국세라믹학회지
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• 제45권6호
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• pp.331-335
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• 2008

The purpose of this study is to characterize the photo-catalytic efficiency of $TiO_2$ nanotube with respect to the distribution of anatase phase which can be changed by the annealing temperature of $TiO_2$ nanotube. $TiO_2$ nanotube was fabricated by the anodization method in the 0.5 wt% HF electrolyte. And then the $TiO_2$ nanotube was annealed at temperatures ranging from $380^{\circ}C$ to $780^{\circ}C$ in dry oxygen ambient for 2 h. For the photo-catalytic water-splitting tests, the photocurrent density was measured as a function of applied potential with a potentiostat using a Ag/AgCl reference, Pt counter electrode, and 1 M KOH electrolyte under illumination of UV by a Xe arc lamp of 1 KW. According to the UV photo-catalytic water-splitting tests, the nanotube annealed at $560^{\circ}C$ was found to show the highest photocurrent density.