• Corrosion Science and Technology
• /
• 제14권2호
• /
• pp.93-98
• /
• 2015

Recently, Stainless steels have been increasingly selected as the fitting or the valve materials of water pipes as the human health issue is getting higher and higher. Therefore, the connectors attached at pipes to deliver water are exposed to more severe environments than the pipes because crevice or galvanic corrosion is apt to occur at the fittings or the valves. Effects of the solid solution annealing, cooling rate after this heat treatment, and passivation on the corrosion properties of the shell mold casted SSC13 (STS304 alloy equivalent) were studied. The heating and quenching treatment more or less reduced hardness but effectively improved corrosion resistance. It was explained by the reduction of delta ferrite contents. Independent of heat treatment, the chemical passivation treatment also lowered corrosion rate but the improvement of corrosion resistance depended on temperature and time for passivation treatment indicating that the optimum conditions for passivation treatment were the bath temperature of $34^{\circ}C$ and operating time of 10 minutes. Therefore it is suggested that the corrosion resistance of SSC13 can be effectively improved with the heat treatment, where SSC13 is heated for 10 minutes at $1120^{\circ}C$ and quenched and passivation treatment, where SSC13 is passivated for at least 10 seconds at $34^{\circ}C$ nitric acid solution.

• 대한전자공학회:학술대회논문집
• /
• 대한전자공학회 2001년도 The 6th International Symposium of East Asian Resources Recycling Technology
• /
• pp.106-110
• /
• 2001

Formation of stoichiometric lithium-, nickel-, and zinc- ferrites by calcining organo-metallic precursors a temperature below 40$0^{\circ}C$ is examined using DTA/TG, and XRD techniques. It attempts to simulate th immobilization of metal ions in industrial liquid influents (waste) through the synthesis of stoichiometric spinel ferrites (SSF). Two steps of the SSF formation during thermal treatments are noted. The transformation of magnetite to ${\gamma}$ - Fe$_2$O$_3$and subsequent first formation of SSF were observed at temperatures ranging from 200 to 45$0^{\circ}C$. Th formation of cation-containing ${\gamma}$-Fe$_2$O$_3$and subsequent second formation of the ferrite occurred at temperature ranges of < 45$0^{\circ}C$ and 500 to $650^{\circ}C$, depending on the heating rate used. Then the temperature range of 200t 45$0^{\circ}C$ is critical to the performance of the technique, because a calcination at the range would lead to a complete formation of SSF, avoiding the occurrences of ${\gamma}$-Fe$_2$O$_3$and ion-containing ${\gamma}$-Fe$_2$O$_3$. If not, so $\alpha$-Fe$_2$O$_3$would occur. And annealing at temperature above $650^{\circ}C$ must be employed by which solid-state reactio of $\alpha$-Fe$_2$O$_3$with metal ions (possibly metal oxides) to form SSF can be conducted.

• Corrosion Science and Technology
• /
• 제13권3호
• /
• pp.87-94
• /
• 2014

Recently, the application of bending products has been increased since the industries such as automobile, aerospace, ships, and plants greatly need the usage of pipes. For facility fabrication, bending process is one of key technologies for pipings. Induction heat bending process is composed of bending deformation by repeated local heat and cooling. Because of local heating and compressive strain, detrimental phases may be precipitated and microstructural change can be induced. This work focused on the effect of induction heat bending process on the properties of ASME SA312 TP316 stainless steel. Evaluation was done on the base metal and the bended areas before and after heat treatment. Microstructure analysis, intergranular corrosion test including Huey test, double loop electropotentiokinetic reactivation test, oxalic acid etch test, and anodic polarization test were performed. On the base of microstructural analysis, grain boundaries in bended extrados area were zagged by bending process, but there were no precipitates in grain and grain boundary and the intergranular corrosion rate was similar to that of base metal. However, pitting potentials of bended area were lower than that of the base metal and zagged boundaries was one of the pitting initiation sites. By re-annealing treatment, grain boundary was recovered and pitting potential was similar to that of the base metal.

• 한국결정성장학회지
• /
• 제19권2호
• /
• pp.70-74
• /
• 2009

Sol-gel 법으로 제조한 $Pb(Sc_{1/2}Nb_{1/2})O_3$(이하 PSN) sol을 이용하여 스핀 코팅법으로 Pt(111)/Ti/$SiO_2$/Si 기판위에 제조한 박막의 제조 공정에 따른 영향을 연구하였다. Pt 기판위에 PSN sol을 증착, 건조한 후에 $370^{\circ}C$에서 5분간 열처리를 행한 후 $10^{\circ}C/sec$의 급속 가열로 $600{\sim}700^{\circ}C$에서 최종 열처리한 경우에 박막은 (111)면으로 우선 배향하는 것으로 나타났다. 그러나 중간 열처리를 거치지 않고, 급속가열에 의한 최종 열처리만을 행한 경우에는 (100)면으로 우선 배향하는 것으로 나타났다. 한편, 중간 열처리 후 $4^{\circ}C/min$의 승온속도로 관상로에서 최종 열처리를 행한 경우에는 (111)면과 (100)면이 동시에 나타나는 것으로 나타났다. 동일한 조건하에서 박막의 두께는 모두 300로 중간 열처리 공정이 어떠한 영향도 미치지 않는 것으로 나타났다.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
• /
• pp.100-101
• /
• 2012

The plasma damage free and room temperature processedthin film deposition technology is essential for realization of various next generation organic microelectronic devices such as flexible AMOLED display, flexible OLED lighting, and organic photovoltaic cells because characteristics of fragile organic materials in the plasma process and low glass transition temperatures (Tg) of polymer substrate. In case of directly deposition of metal oxide thin films (including transparent conductive oxide (TCO) and amorphous oxide semiconductor (AOS)) on the organic layers, plasma damages against to the organic materials is fatal. This damage is believed to be originated mainly from high energy energetic particles during the sputtering process such as negative oxygen ions, reflected neutrals by reflection of plasma background gas at the target surface, sputtered atoms, bulk plasma ions, and secondary electrons. To solve this problem, we developed the NBAS (Neutral Beam Assisted Sputtering) process as a plasma damage free and room temperature processed sputtering technology. As a result, electro-optical properties of NBAS processed ITO thin film showed resistivity of $4.0{\times}10^{-4}{\Omega}{\cdot}m$ and high transmittance (>90% at 550 nm) with nano- crystalline structure at room temperature process. Furthermore, in the experiment result of directly deposition of TCO top anode on the inverted structure OLED cell, it is verified that NBAS TCO deposition process does not damages to the underlying organic layers. In case of deposition of transparent conductive oxide (TCO) thin film on the plastic polymer substrate, the room temperature processed sputtering coating of high quality TCO thin film is required. During the sputtering process with higher density plasma, the energetic particles contribute self supplying of activation & crystallization energy without any additional heating and post-annealing and forminga high quality TCO thin film. However, negative oxygen ions which generated from sputteringtarget surface by electron attachment are accelerated to high energy by induced cathode self-bias. Thus the high energy negative oxygen ions can lead to critical physical bombardment damages to forming oxide thin film and this effect does not recover in room temperature process without post thermal annealing. To salve the inherent limitation of plasma sputtering, we have been developed the Magnetic Field Shielded Sputtering (MFSS) process as the high quality oxide thin film deposition process at room temperature. The MFSS process is effectively eliminate or suppress the negative oxygen ions bombardment damage by the plasma limiter which composed permanent magnet array. As a result, electro-optical properties of MFSS processed ITO thin film (resistivity $3.9{\times}10^{-4}{\Omega}{\cdot}cm$, transmittance 95% at 550 nm) have approachedthose of a high temperature DC magnetron sputtering (DMS) ITO thin film were. Also, AOS (a-IGZO) TFTs fabricated by MFSS process without higher temperature post annealing showed very comparable electrical performance with those by DMS process with $400^{\circ}C$ post annealing. They are important to note that the bombardment of a negative oxygen ion which is accelerated by dc self-bias during rf sputtering could degrade the electrical performance of ITO electrodes and a-IGZO TFTs. Finally, we found that reduction of damage from the high energy negative oxygen ions bombardment drives improvement of crystalline structure in the ITO thin film and suppression of the sub-gab states in a-IGZO semiconductor thin film. For realization of organic flexible electronic devices based on plastic substrates, gas barrier coatings are required to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency flexible AMOLEDs needs an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}gm^{-2}day^{-1}$. The key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required (under ${\sim}10^{-6}gm^{-2}day^{-1}$) is the suppression of nano-sized defect sites and gas diffusion pathways among the grain boundaries. For formation of high quality single inorganic gas barrier layer, we developed high density nano-structured Al2O3 single gas barrier layer usinga NBAS process. The NBAS process can continuously change crystalline structures from an amorphous phase to a nano- crystalline phase with various grain sizes in a single inorganic thin film. As a result, the water vapor transmission rates (WVTR) of the NBAS processed $Al_2O_3$ gas barrier film have improved order of magnitude compared with that of conventional $Al_2O_3$ layers made by the RF magnetron sputteringprocess under the same sputtering conditions; the WVTR of the NBAS processed $Al_2O_3$ gas barrier film was about $5{\times}10^{-6}g/m^2/day$ by just single layer.