• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1762-1764
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• 1999

We investigated the annealing effect on generating pretilt angle and aligning liquid crystal (LC) using the photo-depolymerization reaction in this study. In case of rubbing polyimide (PI) surface with the side chain, pretilt angle tends to increase with increasing the annealing time. It is considered because the steric interaction is increased by annealing which cause the side chain to come back to original position. For obliquely irradiating ultraviolet (UV) light on PI surface, pretilt angle shows to $0^{\circ}$ and is increased by annealing. The pretilt angle in rubbed PI surface is much higher than in photo-aligned PI surface. It is attributed to the steric interaction and the number of LC molecular arrangement on azimuthal direction. In addition. in case of obliquely irradiating UV light on PI surface. it showed LC alignment to increase by annealing. It can be regarded due to the fact that the re-alignment of LC molecule is improved to residual polymer direction by annealing.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.8 no.6
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• pp.105-110
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• 2008

We have investigated the high temperature rapid thermal annealing of GaN epilayers in nitrogen atmosphere. Annealing has been performed in a rapid thermal annealing furnace at $950^{\circ}C$. The effect of rapid thermal annealing of GaN was studied by x-ray diffraction. The Bragg peak shifts toward larger angle as the annealing time increases. The full width at half maximum (FWHM) of the peak slightly increase, followed by decreases, and increases again as the thermal treatment time increases. The improvement of structural properties of the samples was observed after rapid thermal annealing under optimum conditions. This improvement in crystal quality is due to a reduction of the spread in the lattice parameter in epilayers.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.395-397
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• 2002

Dielectric thin films of Pb$\_$0.72/La$\_$0.28/Ti$\_$0.93/O$_3$(PLT(28)) have been deposited on Pt(111)/Ti/SiO$_2$/Si(100) substrates in-situ by pulsed laser deposition using different annealing and deposition processes. We have investigated the effect of hydrogen annealing on the ferroelectric properties of PLT thin films and found that the annealing process causes the diffusion of hydrogen into the ferroelectric film resulting in the destruction of polarization. Two-step process to grow PLT films was adopted and verified to be useful to enlarge the grain size of the film. Structural properties including dielectric constant, and ferroelectric characteristics of PLT thin films were shown to be strongly influenced by grain size. The film deposited by using two-step process including pre-annealing treatment has a strong (111) orientation. However, the films deposited by using single-step process with hydrogen annealing process shows the smallest grain size.

• Korean Journal of Materials Research
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• v.30 no.1
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• pp.44-49
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• 2020

The effect of intercritical annealing temperature on the microstructure and mechanical properties of Fe-9Mn-0.2C-3Al-0.5Si medium manganese steels containing Cu and Ni is investigated in this study. Six kinds of medium manganese steels are fabricated by varying the chemical composition and intercritical annealing temperature. Hardness and tensile tests are performed to examine the correlation of microstructure and mechanical properties for the intercritical annealed medium manganese steels containing Cu and Ni. The microstructures of all the steels are composed mostly of lath ferrite, reverted austenite and cementite, regardless of annealing temperature. The room-temperature tensile test results show that the yield and tensile strengths decrease with increasing intercritical annealing temperature due to higher volume fraction and larger thickness of reverted austenite. On the other hand, total and uniform elongations, and strain hardening exponent increase due to higher dislocation density because transformation-induced plasticity is promoted with increasing annealing temperature by reduction in reverted austenite stability.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.725-728
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• 2001

We have fabricated thin films using the DC/RF magnetron sputtering of 74wt%Ni-l8wt%Cr-4wt%Al-4wt%Cu alloy target and studied the effect of the process parameters on the electrical properties for low TCR(Temperature Coefficient of Resistance) films. In sputtering process, pressure, power and substrate temperature, are varied as controllable parameter. The films are annealed to 400$^{\circ}C$ in air and nitrogen atmosphere. The sheet resistance, TCR of the films increases with increasing annealing temperature. It abruptly increased as annealing temperature increased over 300$^{\circ}C$ in air atmosphere. From XRD, it is found that these results are due to the existence of NiO on film surface formed by annealing. As a results of them, TCR can be controlled by variation of sputter process parameter and annealing of thin film.

• Journal of the Korean Society for Heat Treatment
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• v.7 no.3
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• pp.175-183
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• 1994

The effect of batch annealing conditions and austenitizing temperatures on the hardness and microstructural factors were examined by using 420J2 martensitic stainless steel. In spite of the similler hardness after batch annealing, the difference in hardness at the same austenitizing temperature was caused by changes in dissolved carbon during batch annealing. The highest hardness of the specimen was obtained at the batch annealing temperature of $820^{\circ}C$ and austenitizing temperature of $1050^{\circ}C$. The main factor affecting the final hardness of the cold annealed 420J2 specimen was proved to the austenitizing temperature rather than batch annealing temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.46-46
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• 2006

$SrTiO_3$ was annealed at two different annealing times (1 h and 16 h) to investigate the annealing effect on the grain size and orientation distribution. Electron backscattered diffraction (EBSD) was used to analyze the grain size and grain orientation distributions of the $SrTiO_3$. It is possible to understand the annealing effect on the microstructure evolution, by comparing the grain size and orientation distribution of the $SrTiO_3$ as a function of annealing time.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.1177-1178
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• 2006

Magnetic Properties of dust cores made of mixtures of atomized pure iron powder and pure alumina powder has been investigated in the temperature range from 673 to 1073K. The effect of annealing on coercivity has been positive effect up to 973K and thus coercivity is gradually reduced form 280A/m (as-compressed) to 160A/m (973K). However, dust cores annealed at 1073K displayed a 15% increasing of coercivity by annealing at 973K. Hysteresis loss shows a tendency similar to coercivity. Microstructure observation of specimens shows grain refinement by recrystallization in the temperature range from 773 to 1073K.

• Proceedings of the Korean Magnestics Society Conference
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• 2002.12a
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• pp.162-163
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• 2002

거대자기저항(GMR) 분야에서 높은 GMR 값을 보유하는 것은 주요 관심사이다. Egelhoff와 연구자들은 산소를 이용하여 스핀밸브 박막의 표면을 산화시켜 유도 전자들의 Specular 산란 효과를 보고하였으며, 강자성층과 산화층 사이의 계면에서 specular 반사가 이루어져 GMR의 향상을 가져온 것으로 보고 있다[1,2]. 또한 annealing에 따른 자기적 특성의 향상과에 관한 논문도 보고되어진 바 있다[4]. (중략)

• Journal of the Korean Society for Heat Treatment
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• v.32 no.2
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• pp.74-78
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• 2019

$Zn_2SnO_4$ thin films were deposited on quartzs substrates by using radio-frequency magnetron sputtering system. Thermal treatments at various temperatures were performed to evaluate the effect of annealing temperatures on the properties of $Zn_2SnO_4$ thin films. Surface morphologies were examined by using field emission-scanning electron microscopy and showed that sizes of grains were slightly increased and grain boundaries were clear with increasing annealing temperatures. The deposited $Zn_2SnO_4$ thin films on quartzs substrates were amorphous structures and no distinguishable crystallographic changes were observed with variations of annealing temperatures. The optical transmittance was improved with increasing annealing temperatures and was over 90% in the wavelength region between 350 and 1100 nm at the annealing temperature of $600^{\circ}C$. The optical energy bandgaps, which derived from the absorbance of $Zn_2SnO_4$ thin films, were increased from 3.34 eV to 3.43 eV at the annealing temperatures of $450^{\circ}C$ and $600^{\circ}C$, respectively. As the annealing temperature was increased, the electron concentrations were decreased. The electron mobility was decreased and resistivity was increased with increasing annealing temperatures with exception of $450^{\circ}C$. These results indicate that heat treatments at higher annealing temperatures improve the optical and electrical properties of rf-sputtered $Zn_2SnO_4$ thin films.