• 열처리공학회지
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• 제24권4호
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• pp.199-202
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• 2011

Ga doped ZnO thin films were deposited with RF magnetron sputtering on glass substrate without intentional substrate heating and then the effect of post deposition annealing temperature on the structural, optical and electrical properties of the films was investigated. The post deposition annealing process was conducted for 30 minutes in a vacuum of $1{\times}10^{-3}$ Torr and the vacuum annealing temperatures were 150 and $300^{\circ}C$, respectively. As increase annealing temperature, GZO films show the increment of the prefer orientation of ZnO (002) diffraction peak in the XRD pattern and the optical transmittance in a visible wave region was also increased, while the electrical sheet resistance was decreased. The figure of merit obtained in this study means that GZO films which vacuum annealed at $300^{\circ}C$ have the highest optoelectrical performance in this study.

• 한국분말재료학회지
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• 제13권1호
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• pp.25-32
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• 2006

The alumina dispersion-strengthened (DS) C15715 Cu alloy fabricated by a powder metallurgy route was annealed at temperatures ranging from $800^{\circ}C\;to\;1000^{\circ}C$ in the air and in vacuum. The effect of the annealing on microstructural stability and room-temperature mechanical properties of the alloy was investigated. The microstructure of the cold rolled OS alloy remained stable until the annealing at $900^{\circ}C$ in the air and in vacuum. No recrystallization of original grains occurred, but the dislocation density decreased and newly formed subgrains were observed. The alloy annealed at $1000^{\circ}C$ in the air experienced recrystallization and grain growth took place, however annealing in vacuum at $1000^{\circ}C$ did not cause the microstructural change. The mechanical property of the alloy was changed slightly with the annealing if the microstructure remained stable. However, the strength of the specimen that was recrystallized decreased drastically.

• Journal of Magnetics
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• 제12권1호
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• pp.49-52
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• 2007

We investigated annealing effect of microforged powders on magnetic properties and electromagnetic absorption behaviors for ferromagnetic Fe-Cr metal alloy powder-polymer composites. The coercive properties greatly decreased with annealing temperature and the magnetic permeability had significantly increased after microforging and subsequent annealing treatment, due to a reduction in lattice strain of the microforged powders. The power loss in the far field regime also had greatly increased after microforging and subsequent annealing treatment in frequency range from 50 MHz to 6 GHz. As a result, the electromagnetic absorption of ferromagnetic Fe-Cr alloy metal powder-polymer composites was highly improved because of the relaxation of the internal strain during annealing process.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2000년도 하계종합학술대회 논문집(2)
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• pp.274-277
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• 2000

Thin Film Transistor(TFTs) were fabricated from poly-Si crystallized by a two-step annealing process on glass substrates. The combination of low-temperature(500$^{\circ}C$) Metal-Induced Lateral Crystallization(MILC) furnace annealing and high -temperature (700$^{\circ}C$) rapid thermal annealing leads to the improvement of the material quality The TFTs measured with this two-step annealing material exhibit better characteristics than those obtained by using conventional MILC furnace annealing.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2003년도 하계학술연구발표회 및 한.일 공동심포지엄
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• pp.70-71
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• 2003

• 한국광학회지
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• 제20권1호
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• pp.34-40
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• 2009

$MgF_2$, $SiO_2$ 및 ZnS 박막을 물리 증기 증착하는 동안 펄스 레이저(Nd-YAG, 제2고조파 532 nm)로 Annealing 하여 표면 거칠기 특성을 개선하였다. 펄스 반복율이 10 Hz, 펄스폭 5 ns, 파장 532 nm인 펄스레이저로 Annealing한 유리 기판에 증착된 $MgF_2$와 $SiO_2$ 시료들은 레이저 에너지가 $140\;mJ/cm^2$ 경우에 산란 총량 값이 최소가 되었지만, ZnS 박막의 경우에는 Annealing 레이저광 에너지가 $62\;mJ/cm^2$일 때 산란 총량이 최소값을 나타냈다. AFM을 사용하여 박막시료의 표면 거칠기에 대한 펄스 레이저 Annealing 효과를 측정 하였다. 그 결과는 TIS 측정치와 유사 하여 표면 거칠기는 Annealing 하기위해 조사된 레이저 에너지에 의존 하여 감소하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.335.2-335.2
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• 2016

The fixed negative charge of the Al2O3 passivation layer gives excellent passivation performance for both n-type and p-type silicon wafers. For the best passivation quality, annealing is known to be a prerequisite step and a lot of studies concerning annealing effect on the passivation characteristics have been performed. Meanwhile, for manufacturing a crystalline silicon solar cell, firing process is applied to the Al2O3 passivation layer. Therefore, study on not only annealing effect but also on firing effect is necessary. In this work, Al2O3 passivation performance (minority carrier lifetime) for p-type silicon wafer was evaluated with Quasi-Steady-State Photoconductance(QSSPC) measurement after annealing at different temperatures. For the samples which showed different aspects, C-V measurement was performed for the cause - whether it is due to the chemical effect or field-effect. The change in Al2O3 passivation property after firing processes was investigated and the mechanism for the change could be estimated.

• 소성∙가공
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• 제13권5호
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• pp.449-454
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• 2004

The annealing behavior of a 5083 Al alloy deformed at cryogenic temperature was investigated, focusing on the evolution of microstructures and mechanical properties. Especially, the effects of annealing temperature, $150~300^{\circ}C$, and time, 3∼60min., on microstructures and mechanical properties of the sheets received 85% reduction at cryogenic temperature were investigated. The optimization of the annealing conditions resulted in a mixture of equiaxed grains and elongated subgrains, exhibiting a good combination of uniform elongation and high strength.

• Corrosion Science and Technology
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• 제14권6호
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• pp.296-300
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• 2015

ALDC8 (Al-Si-Cu) alloy has been often corroded with pattern of intergranular corrosion in corrosive environments. Thus, in order to improve its corrosion resistance, the effect of annealing heat treatment to corrosion resistance and hardness was investigated with parameters of heating temperatures such as $100^{\circ}C$, $200^{\circ}C$, $300^{\circ}C$, $400^{\circ}C$ and $500^{\circ}C$ for 1hr. The hardness was varied with annealing temperature and slightly decreased with annealing heat treatment. However, the relation between annealing temperature and hardness agreed not well each other. Corrosion potential was shifted to noble direction and corrosion current density was also decreased with increasing annealing temperature. Moreover, both AC impedance at 10 mHz and polarization resistance on the cyclic voltammogram curve were also increased with increasing annealing temperature. Furthermore, intergranular corrosion was somewhat observed in non heat treatment as well as annealing temperatures at $100^{\circ}C$, $200^{\circ}C$ and $300^{\circ}C$, while, intergranular corrosion was not nearly observed at annealing temperature of $400^{\circ}C$, $500^{\circ}C$. Consequently, it is considered that the annealing heat treatment of ALDC8 alloy may be an available method not only to inhibit its intergranular corrosion but also to improve its corrosion resistance.

• 한국전기전자재료학회논문지
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• 제16권3호
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• pp.190-194
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• 2003

Dielectric thin films of (P $b_{0.72}$,L $a_{0.28}$) $Ti_{0.93}$ $O_3$ (PLT(28)) have been deposited on Pt(111)/Ti/ $SiO_2$/Si(100) substrates in-situ by pulsed laser deposition using different annealing and deposition Processes. We have investigated the effect of hydrogen annealing on the ferroelectric properties of PLT thin films and found that the annealing process causes the diffusion of hydrogen into the ferroelectric film resulting in the destruction of polarization. We have tried to form the film by a two-step deposition process In order to improve electrical property. Two-step process to grow PLT films was adopted and verified to be useful to enlarge the grain size of the film and to reduce the leakage current characteristics. Structural properties and electrical properties including dielectric constant, ferroelectric characteristics, and leakage current of PLT thin films were shown to be strongly influenced by grain size. The film deposited by using two-step Process including pre-annealing treatment has a strongly(111) orientation. However, the films deposited by using single -step process with hydrogen annealing process show the smallest grain size. The film deposited by using two-step process including pre-annealing treatment shows the leakage current density of below 10$^{-7}$ A/c $m^2$ for the field of smaller than 100 kV/cm. However, the films deposited by using single-step process with hydrogen annealing process and pre-annealing process show worse leakage current density than the film deposited by using two-step process including pre-annealing treatment.tment.