• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.642-642
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• 2013

Graphene, two dimensional single layer of carbon atoms, has tremendous attention due to its superior property such as high electron mobility, high thermal conductivity and optical transparency. Especially, chemical vapor deposition (CVD) grown graphene has been used as a promising material for high quality and large-scale graphene film. Unfortunately, although CVD-grown graphene has strong advantages, application of the CVD-grown graphene is limited due to ineffective transfer process that delivers the graphene onto a desired substrate by using polymer support layer such as PMMA(polymethyl methacrylate). The transferred CVD-grown graphene has serious drawback due to remaining polymeric residues generated during transfer process, which induces the poor physical and electrical characteristics by a p-doping effect and impurity scattering. To solve such issue incurred during polymer transfer process of CVD-grown graphene, various approaches including thermal annealing, chemical cleaning, mechanical cleaning have been tried but were not successful in getting rid of polymeric residues. On the other hand, lithographical patterning of graphene is an essential step in any form of microelectronic processing and most of conventional lithographic techniques employ photoresist for the definition of graphene patterns on substrates. But, application of photoresist is undesirable because of the presence of residual polymers that contaminate the graphene surface consistent with the effects generated during transfer process. Therefore, in order to fully utilize the excellent properties of CVD-grown graphene, new approach of transfer and patterning techniques which can avoid polymeric residue problem needs to be developed. In this work, we carried out transfer and patterning process simultaneously with no polymeric residue by using a metal etch mask. The patterned thin gold layer was deposited on CVD-grown graphene instead of photoresists in order to make much cleaner and smoother surface and then transferred onto a desired substrate with PMMA, which does not directly contact with graphene surface. We compare the surface properties and patterning morphology of graphene by scanning electron microscopy (SEM), atomic force microscopy(AFM) and Raman spectroscopy. Comparison with the effect of residual polymer and metal on performance of graphene FET will be discussed.

• Journal of the Korean Society for Heat Treatment
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• v.19 no.1
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• pp.10-19
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• 2006

Microstructure and morphology of precipitates in $Ni_3Al$- and TiAl-based intermetallics containing carbon have been investigated in terms of transmission electron microscopy(TEM). In an $L1_2$-ordered $Ni_3Al$ alloy with 4 mol.% of chromium and 0.2~3.0 mol.% of carbon, fine octahedral precipitates of $M_{23}C_6$ type carbide were formed in the matrix by aging at temperatures around 973 K after solution annealing at 1423 K. TEM examination revealed that the $M_{23}C_6$ phase and the matrix lattices have a cube-cube orientation relationship and keep partial atomic matching at the {111} interface. After prolonged aging or by aging at higher temperatures, the $M_{23}C_6$ precipitates then adopt a rod-like morphology elongated parallel to the <100> directions. In the $L1_0$-ordered TiAl containing 0.1~2.0 mol.% carbon, TEM observations revealed that needle-like precipitates, which lie only in one direction parallel to the [001] axis of the $L1_0$ matrix, appear in the matrix and preferentially at dislocations. Selected area electron diffraction(SAED) patterns analyses have shown that the needle-shaped precipitate is $Ti_3AlC$ of perovskite type. The orientation relationship between the $Ti_3AlC$ and the $L1_0$ matrix is found to be $(001)_{Ti3AlC}//(001)_{L10\;matrix}$ and $[010]_{Ti3AlC}//[010]_{L10\;matrix}$. By aging at higher temperatures or for longer period at 1073 K, plate-like precipitates of $Ti_2AlC$ with a hexagonal structure are formed on the {111} planes of the $L1_0$ matrix. The orientation relationship between the $Ti_2AlC$ and the $L1_0$ matrix is $(0001)_{Ti2AlC}//(111)_{L10\;matrix}$ and $_{Ti2AlC}//_{L10\;matrix}$.

• Applied Chemistry for Engineering
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• v.9 no.7
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• pp.990-997
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• 1998

In this work, the $SiO_2$ films on the silicon substrate with different orientations were first prepared by the low temperature process using the ECR plasma diffusion as a function of microwave power and oxidation time. Before and after thermal treatment, the surface morphology, Si/O ratio from physicochemical properties, and the electrical properties of the oxide films were also investigated. The oxidation rate increased with microwave power, while surface morphology showed the nonuniform due to etching. The film quality, therefore, was lowered with increasing the defect by etching and the content of positive oxide ions in the oxide films from bulk by higher self-DC bias. The content of positive oxide ions in the oxide films with different Si orientations showed Si(100) < Si(111) < poly Si. The defects in $Si/SiO_2$ interface of $SiO_2$ film could be decreased by annealing, while $Q_{it}$ and $Q_f$ were independent of thermal treatment and the dependent on concentration of reactive oxide ions and self-DC bias of substrate. At microwave power of 300, and 400 W, the high quality $SiO_2$ film that had lower surface roughness and defect in $Si/SiO_2$ interface was obtained. The value of interface trap density, then, was ${\sim}9{\times}10^{10}cm^{-2}eV^{-1}$.

• Journal of Biomedical Engineering Research
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• v.34 no.4
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• pp.182-188
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• 2013

This study aims to develop a practical algorithm which can detect freezing of gait(FOG) in patients with Parkinson's disease(PD). Eighteen PD patients($68.8{\pm}11.1yrs.$) participated in this study, and three($68.7{\pm}4.0yrs.$) of them showed FOG. We suggested two time-domain algorithms(with 1-axis or 3-axes acceleration signals) and compared them with the frequency-domain algorithm in the literature. We measured the acceleration of left foot with a 3-axis accelerometer inserted at the insole of a shoe. In the time-domain method, the root-mean-square(RMS) acceleration was calculated in a moving window of 4s and FOG was defined as the periods during which RMS accelerations located within FOG range. The parameters in each algorithm were optimized for each subject using the simulated annealing method. The sensitivity and specificity were same, i.e., $89{\pm}8%$ for the time-domain method with 1-axis acceleration and were $91{\pm}7%$ and $90{\pm}8%$ for the time-domain method with 3-axes acceleration, respectively. Both performances were better in the time-domain methods than in the frequency-domain method although the results were statistically insignificant. The amount of calculation in the time-domain method was much smaller than in the frequency-domain method. Therefore it is expected that the suggested time domain algorithm would be advantageous in the systematic implementation of FOG detection.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.8 no.2
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• pp.195-200
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• 2007

We fabricated thermally-evaporated 10 nm-Ni/70 w-Poly-Si/200 $nm-SiO_2/Si$ and $10nm-Ni_{0.5}Co_{0.5}/70$ nm-Poly-Si/200 $nm-SiO_2/Si$ structures to investigate the microstructure of nickel monosilicide at the elevated temperatures required fur annealing. Silicides underwent rapid anneal at the temperatures of $600{\sim}1100^{\circ}C$ for 40 seconds. Silicides suitable for the salicide process formed on top of the polycrystalline silicon substrate mimicking the gates. A four-point tester was used to investigate the sheet resistances. A transmission electron microscope and an Auger depth profile scope were employed for the determination of cross sectional microstructure and thickness. 20nm thick nickel cobalt composite silicides on polycrystalline silicon showed low resistance up to $900^{\circ}C$, while the conventional nickle silicide showed low resistance below $900^{\circ}C$. Through TEM analysis, we confirmed that the 70nm-thick nickel cobalt composite silicide showed a unique silicon-silicide mixing at the high silicidation temperature of $1000^{\circ}C$. We identified $Ni_3Si_2,\;CoSi_2$ phase at $700^{\circ}C$ using an X-ray diffractometer. Auger depth profile analysis also supports the presence of this mixed microstructure. Our result implies that our newly proposed NiCo composite silicide from NiCo alloy films process may widen the thermal process window for the salicide process and be suitable for nano-thick silicides.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.4 no.5
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• pp.1127-1134
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• 2000

$RuO_2$ thin films are prepared by RP magnetron reactive sputtering and their characteristics of crystalliBation,microstructure, surface roughness and resistivity are studied with various O2/(Ar+O2)ratios and substrate temperatures. As O2/(Ar+O2) ratio decreases and substrate temperature increases, the preferred growing plane of$RuO_2$ thin films are changed from (110) to (101) plane. With increase of the 021(Ar+O2) ratio from 2075 to 50%, the surface roughness and the resistivity of $RuO_2$ thin films increase from 2.38nm to 7.81nm, and from $103.6 \mu\Omega-cm\; to \; 227 \mu\Omega-cm$, respectively, but the deposition rate decreases from 47nm/min to 17nm/min. On the other hand, as the substrate temperature increases from room temperature to$500^{\circ}C$, resistivity decreases from $210.5 \mu\Omega-cm\; to \; 93.7\mu\Omega-cm$. $RuO_2$ thin film deposited at $300^{\circ}C$ shows a excellent surface roughness of 2.38 m. As the annealing temperature increases in the range between $400^{\circ}C$ and $650^{\circ}C$, the resistivity decreases because of the improvement of crystallinity. We find that RuO$_2$ thin film deposited at 20% of 02/(Ar+O2) ratio and $300^{\circ}C$ of substrate temperature shows excellent combination of surface smoothness and low resistivity so that it is well qualified for bottom electrode for ferroelectric thin films.

• Journal of Korea Multimedia Society
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• v.14 no.3
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• pp.403-413
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• 2011

In this paper, we proposed a digital image watermarking technique using scrambled binary phase computer generated hologram in the discrete cosine transform(DCT) domain. For the embedding process of watermark. Using simulated annealing algorithm, we would generate a binary phase computer generated hologram(BPCGH) which can reconstruct hidden image perfectly instead of hidden image and encrypt it through the scramble operation. We multiply the encrypted watermark by the weight function and embed it into the DC coefficients in the DCT domain of host image and an inverse DCT is performed. For the extracting process of watermark, we compare the DC coefficients of watermarked image and original host image in the DCT domain and dividing it by the weight function and decrypt it using descramble operation. And we recover the hidden image by inverse Fourier transforming the decrypted watermark. Finally, we compute the correlation between the original hidden image and recovered hidden image to determine if a watermark exits in the host image. The proposed watermarking technique use the hologram information of hidden image which consist of binary values and scramble encryption technique so it is very secure and robust to the various external attacks such as compression, noises and cropping. We confirmed the advantages of the proposed watermarking technique through the computer simulations.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.17 no.12
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• pp.737-742
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• 2016

We prepared five different ethylene-propylene copolymers (EPCs) for use as the encapsulant of a photovoltaic module. All of the polymers were of commercial grade from ExxonMobile company and had different ethylene/propylene compositions. The crystallization behaviors and crystal structures of the polymers were analyzed by differential scanning calorimetry and wide angle X-ray scattering diffractometry, respectively. We observed the general trend that the degree of crystallization, density and glass transition temperature of the EPCs decreased with increasing ethylene content. However, an unexpected result was also observed: the EPC with the highest ethylene content (22.2 mol. %) showed the highest melting temperature. As a result, the EPC with 22.2 mol. % of ethylene shows the highest light transmittance, due to its having the lowest degree of crystallization and highest thermal creep resistance. This abnormal result is attributed to the blocky structure prepared by ExxonMobile's special catalyst technology. It was also observed that new additional melting peaks appeared as the crystallization time increased. Using wide angle X-ray scattering diffractometry, it was confirmed that these additional peaks originated from the formation of a new crystal structure caused by annealing.

• 한국초전도학회:학술대회논문집
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• v.9
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• pp.152-159
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• 1999

YBa$_2Cu_3O_{7-{\delta}}$ (YBCO) films grown on CeO$_2$-buffered r-cut sapphire substrates (CbS's) were prepared and their structural and electrical properties were measured. Post-annealed CeO$_2$ films were used as buffer layers for the experiments. It turned out that the YBCO films grown on post-annealed CbS's had the rms roughness of less than 20 ${\AA}$ and peak-to-peak roughness of about 30 ${\AA}$ when the YBCO film thickness was 3000 ${\AA}$. Meanwhile, YBCO films on in-situ grown CeO$_2$ buffer layers on r-cut sapphire substrates appeared to have the peak-to-peak roughness of more than 450 ${\AA}$. X-ray diffraction data revealed that the YBCO flms were epitaxially grown along the c-axis with the typical FWHM of(005) ${\theta}$ -2 ${\theta}$ peak about 0. 16 $^{\circ}$ and ${\Delta}$ ${\omega}$ of the (005) peak about 0.5 $^{\circ}$. T$_c$ > 87 K, ${\Delta}$T < 1 K and R(look)/R(100K) ${\ge}$3 were observed from the YBCO films. Applicability of the YBCO films for high-frequency applications was described.

• Journal of the Korean Vacuum Society
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• v.21 no.5
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• pp.233-241
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• 2012

We have deposited the bilayer consisted of the underlayer and the overlayer by using DC magnetron sputter on Single crystal MgO (001) substrate. This bilayer was fabricated at fixed annealing temperature and time. We have controlled agglomeration effect by changing of the bilayer thickness. Finally, we have made the self-organization and nano-structured film. In this processing, we have made nano-dot which consists of the underlayer and the overlayer, unlike the existing method called the agglomeration effect in the single layer. The underlayer has deposited using Ti, Cr and Co. And the overlayer has deposited with Ag. Through the analysis of Atomic force microscopy (AFM), the microstructure of underlayer is observed by AFM to confirm the formation of nano-dot. As the nano-dot through above processing, we have found that the nano-dot has the different shape. As a result, when we manufactured nano-dot through the agglomeration effect of bi-layer, the best matching material is Ti for underlayer. And also, we have found that MgO/Ti/Ag samples have been grown expitaxially toward the direction of MgO (001) by X-ray Diffraction analysis.