• Proceedings of the Optical Society of Korea Conference
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• 2000.02a
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• pp.258-259
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• 2000

Quantum Well Disordering (QWD) has drawn a considerable attention in recent years$^{(1-3)}$ due to its wide applicability to optoelectronic devices. QWD allows modification of the shape of QW in selected regions, hence it modifies the subband energies in conduction and valance bands$^{(4)}$ . This leads to changes in optical properties such as band gap, absorption coefficient and refractive index. Thus such disordering in selected areas enables monolithic integration of various optoelectronic devices such as lasers, EA/EO modulators, waveguides and optical amplifiers. In this paper, we investigate the quantum well disordering effects on photoluminescence spectra by using experimental measurements and theoretical analysis$^{(5)}$ . (omitted)

• Journal of the Optical Society of Korea
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• v.14 no.4
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• pp.298-304
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• 2010

The pair-induced quenching (PIQ) effect in a highly doped bismuth oxide-based erbium-doped fiber amplifier (EDFA) was theoretically and experimentally investigated. In the theoretical investigation, the bismuth oxide-based EDFA was modeled as a 6-level amplifier system that incorporated clustering-induced concentration quenching, cooperative up-conversion, pump excited state absorption (ESA), and signal ESA. The relative number of paired ions in a highly doped bismuth oxide EDF was estimated to be ~6.02%, determined by a comparison between the theoretical and the experimentally measured gain values. The impacts of the PIQ on the gain and the noise figure were also investigated.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2004.05a
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• pp.1047-1051
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• 2004

Charge amplifier systems benefit from the very wide dynamic range of PE accelerometers by offering flexibility in adjusting the electrical output characteristics such as sensitivity and range. They are well suited for operation at high temperatures. Modern charge systems feature improved low noise operation, simplified digital controls, and dual mode operation for operation with charge or IEPE voltage mode sensors. high impedance circuitry is not well suited for operation in adverse field or factory environments. The resolution of a PE accelerometer may not be specified or known since noise is a system consideration determined by cable length and amplifier gain. IEPE accelerometrs operate from a constant current power source, provide a high-voltage, low-impedance, fixed mV/g output. They operate through long, ordinary, coaxial cable in adverse environments without degradation of signal quality. They have limited high temperature range. IEPE sensors are simple to operate. Both resolution and operating range are defined specifications. Cost perchannel is lower compared to PE systems since low-noise cable and charge amplifiers are not required.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.12
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• pp.54-62
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• 2003

A systematic synthesis process is described lot the simulation of current-controllable inductors using operational transconductance amplifiers (OTAs). The process is used to obtain three circuits; two are believed It) be novel. The process is also applied to design current-controllable frequency-dependent negative resistances (FDNRs). Operation principles of designed circuits are presented and experimental results are used to verify theoretical predictions. The results show close agreement between predicted behavior and experimental performance. The application of a FDNR to a current-controllable band-pass filter is also presented.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.43 no.6 s.312
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• pp.48-60
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• 2006

This paper presents three PWM modulators using CMOS OTAs. They consist of a ramp integrator and current-tunable Schmitt triggers. Prototype circuits built using discrete components exhibited that their duty cycles are linearly controllable. The proposed modulators can be easily fabricated in a monolithic IC, because they have a simple structure.

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.4
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• pp.275-280
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• 2006

We propose Doherty power amplifier structure which can be integrated in Silicon RF ICs. Doherty power amplifiers are widely used in RF transmitters, because of their high Power Added Efficiency (PAE) and good linearity. In this paper, it is proposed that a method to replace the quarter wavelength coupler with IQ up-conversion mixers to achieve 90 degree phase shift, which allows on-chip Doherty amplifier. This idea is implemented and manufactured in CMOS 5 GHz band direct-conversion RF transmitter. We measured a 3dB improvement output RF power and linearity.

• Journal of Industrial Technology
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• v.15
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• pp.83-91
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• 1995

This paper presents the design of a smart A/D conversion interface used for measuring the load of a truck. Since the load-cell sensor to be used is very sensitive for weight variation, the interface board must have the low-drift and the A/D conversion for accuracy. A new integrator and comparator has been developed to reduce the offset voltage and the drift current of operational amplifiers and has been adapted into the interface board. Also, a software algorithm has been developed to obtain the stable and accrurate A/D conversion. This software includes a RS-485 communication program to control the interface, which gives a capability of backing-up the calibration data and transferring control data. The test and evaluation of the designed interface has been shown as having the better performance compared to the other types of existing weighing systems and sensor instruments.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2003.11a
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• pp.326-329
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• 2003

In this paper, we designed and implemented a high power amplifier(HPA) to achieve the high Power Added Efficiency(PAE) over 40% at the 90W output power for the ISM-band(fo=2.45GHz). HPA presented in this paper has 3-stage drive amplifier and 1-stage final amplifier. In the final amplifier, we utilized balanced amplifier configuration with GaAs FET and each of two amplifiers has the push-pull configuration to increase PAE. From the measurement results, we obtained PAE of 42.95% at the 90.57W output power.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2003.11a
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• pp.113-117
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• 2003

This paper describes the design and the simulation results of the RF CMOS Class-E Power Amplifier for a 2.4GHz ISM band. This circuit is composed two connected amplifiers. where Class F amplifier drives Class E amplifier. The proposed circuit can reduce the total power dissipation of the driving stage and can work with higher efficiency. The power amplifier has been implemented in a standard $0.25{\mu}m$ CMOS technology and is shown to deliver 100mW output power to load with 41% power added efficiency(PAE) from a 2.5V supply.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.2
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• pp.325-333
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• 2007

A PV system inverter test module using RTDS was developed and performance test of a commercial PV inverter was carried out. The developed module consists of one RTDS hardware rack, RTDS software models representing PV array and simple distribution system, and two power amplifiers that was specifically designed for generating power corresponding to signals from RTDS. Performance test results verified effectiveness and reliability of the test module. It is expected that the developed test module may help PV inverter manufacturers improve ana test their systems in the developing stage.