• 제목/요약/키워드: amorphous-Selenium

검색결과 74건 처리시간 0.02초

비정질 박막에 대한 도핑 조건의 영향 및 미세구조와 I-V 연구 (Effect of Dopping Conditions on a-Se Thin-Films : Microstructural and I-V Study)

  • 박성광;박지군;강상식;공현기;김진섭;남상희
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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    • pp.492-496
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    • 2001
  • Due to their better photosensitivity in X-ray, the amorphous selenium based photoreceptor is widely used on the X-ray conversion materials. It was possible to control the charge carrier transport of amorphous selenium by suitably alloying a-Se with other elements(e,g. As, Cl). In this paper, We investigated dopants(As, Cl) composition rate to improve dark resistivity and transport properties of charge carrier in amorphous selenium using by direct X-ray conversion material. Alloying a-Se with As inhibits the recrystallization of a-Se but introduces undesirable deep hole traps. then doping with Cl(in the ppm range) compensates for the deep hole traps. We investigated their composition rate in various doping conditions and then obtained optimum dopant composition rate. The result was Se-As 0.3%-c] 30 ppm and X-ray Sensitivity was 0.57 pC/$pixel{\cdot}mR$ at $137{\mu}m{\times}137{\mu}m$ Pixel area.

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몬테카를로 시뮬레이션을 이용한 X선 변환물질의 특성 연구 (Characteristic Study of X-ray convert material by Monte Carlo Simulation)

  • 김진영;박지군;강상식;김소영;정은선;남상희;강신원
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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    • pp.418-421
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    • 2003
  • Today, much terminologies such as noise spectrum, Sharpness, contrast, MTF had been defined for Image quality revaluation of radiation Image. Since development of Xeroradiography In the 1970s, Digital radiation detector that use amorphous selenium was developed. The aim of this research is to analyze physical phenomenon of digital radiation detector that use amorphous selenium. Result of Monte Carlo simulations on amorphous selenium based on physical properties(creation of electron-hole pairs) by induced x-ray are described. From the simulation, intrinsic point spread function(PSF) was found and used to observe modulation transfer function(MTF). We investigated how PSF and MTF changed with various x-ray energy. This result can be used to design digital x-ray detector based on a-Se.

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전하 트랩 및 주입 문제를 해결하기 위한 비정질 셀레늄 필름의 계면 특성 (Interfacial Properties of a-Se Thick Films to Solve Charge Trap and Injection Problems)

  • 조진욱;최장용;박창회;김재형;이형원;남상희;서대식
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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    • pp.497-500
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    • 2001
  • Due to their better photosensitivity in X-ray, the amorphous selenium based photoreceptor is widely used on the X-ray conversion materials. It was possible to control the charge carrier transport of amorphous selenium by suitably alloying a-Se with other elements(e.g. As, Cl). The charge transport properties of amorphous Selenium is decided on hole which is induced from metal to selenium in metal-selenium junction and which is transferred in a-Se bulk. This phenomenon is resulted of changing electric field owing to increasing of space charge by deep trap of a-Se bulk. In this paper, We dopped the chlorine to compensate deep hole trap and deposited blocking layer using dielectric material to prevent from increasing space charge for injection charge between metal electrode and a-Se layer. We compared space charge and the decreasing of trap density through measuring dark and photo current. 缀Ѐ㘰〻ሀ䝥湥牡氠瑥捨湯汯杹

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비정질 셀레늄의 누설전류 저감을 위한 다층구조 제작 및 특성 평가 (The Multi-layer Fabrication and Characteristic Performance for Dark Current Reduction of Amorphous Selenium)

  • 박지군;강상식;석대우;이형원;남상희
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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    • pp.849-852
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    • 2002
  • Recently, amorphous selenium is used as x-ray conversion material for flat-panel x-ray detector. In this paper, we investigated the effect of breakdown under high voltage and leakage current in PN-type multi-layer structure based on p-type a-Se and n-type conductive thin film. Experimental results show that the multi-layer based detector reduced leakage current because n-type CeO2 conductive layer prevent from hole injection into a-Se layer from collection electrode, Also, the breakdown voltage was improved by dielectric layer between a-Se and top electrode.

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Arsenic의 첨가량에 따른 방사선 검출센서 (a-Se)의 전기적 특성 비교 (The Comparison of Electric Characteristics of Radiation Detective Sensor(a-Se) with changing composition ratio of Arsenic)

  • 석대우;강상식;이동길;김재형;남상희
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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    • pp.391-394
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    • 2002
  • There has recently been much interest and research in developing digital x-ray systems based on using amorphous selenium(a-Se) photoconductors as the image receptor. The amorphous selenium layer that is currently being studied for use as an x-ray photoconductor is not pure a-Se but rather amorphous selenium alloyed with arsenic. We fabricated samples using the selenium and arsenic alloy with various concentrations of the arsenic. In this work, x-ray photoconductor using amorphous selenium alloyed with arsenic were fabricated with different concentrations of the arsenic (0.1 wt.%, 0.3wt.%, 0.5wt.%, 1wt.%, 1.5wt.%, 3wt.%, 5wt.%). The seven kind of samples was fabricated with a-Se alloyed with arsenic through vacuum thermal evaporation. We also investigate the arsenic concentration dependence on the device performance in radiation detector. The electric characteristics of radiation detector devices with changing additive ratio of the arsenic is performed by measuring the x-ray induced photocurrent and integrating it over time to find the total charge. The thickness of a-Se is $100{\mu}m$. Bias voltages $3V/{\mu}m$, $6V/{\mu}m$$9V/{\mu}m$ are applied at the samples. As results, the net charge of a-Se 0.3% As sample is $526.0pC/mR/cm^2$ at $9V/{\mu}m$ bias. The net charge is decreased as with the increasing additive ratio of arsenic.

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혼합형 X선 센서에서 a-Se 의 Iodine 첨가비 연구 (The Study on Composition ratio of Iodine in Hybrid X-ray Sensor)

  • 공현기;박지군;최장용;문치웅;남상희
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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    • pp.366-369
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    • 2002
  • At present, the study of direct digital X-ray detector and indirect digital X-ray detector proceed actively. But it needs high thickness and high voltage in selenium for high ionization rate. Therefore, we carried out the study of electric characteristics of a-Se with additive ratio of Iodine in drafting study for developing Hybrid X -ray Sensor for complementing direct digital X -ray detector and indirect digital X-ray detector in this paper. On this, there are formed Amorphous selenium multi-layers by sticking phosphor layer$(Gd_{2}O_{2}S(Eu^{2+}))$ using optical adhesives of EFIRON Co. Amorphous selenium multi-layers having dielectric layer(parylene) has characteristics of low dark-current, high X-ray sensitivity. So we can acquired a enhanced signal to noise ratio. We make Amorphous selenium multi-layers with $30{\mu}m$ thickness on glass.

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Zinc Sulfide-selenium X-ray Detector for Digital Radiography

  • Park, Ji-Koon;Kang, Sang-Sik;Kim, Jae-Hyung;Mun, Chi-Woong;Nam, Sang-Hee
    • Transactions on Electrical and Electronic Materials
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    • 제3권4호
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    • pp.16-20
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    • 2002
  • The high bias voltage associated with the thick layer (typically 500-1000 ㎛) of selenium required to have an acceptable x-ray absorption in radiography and fluoroscopy applications may have some practical inconvenience. A hybrid x-ray detector with zinc sulfide-amorphous selenium structure has been developed to improve the x-ray sensitivity of a a-Se based flat-panel digital imaging detector. Photoluminescence(PL) characteristic of a ZnS:Ag phosphor layer showed a light emission peak centered at about 450 nm, which matches the sensitivity spectrum of selenium. The dark current of the hybrid detector showed similar characteristics with that of a a-Se detector. The x-ray sensitivity of hybrid and a-Se x-ray detector was 345 pC/㎠/mR and 295 pC/㎠/mR at an applied voltage of 10 V/㎛, respectively. The purpose of this study was to evaluate the pertinence of a solution using a thin selenium layer, as a photosensitive converter, with a thick coating of silver doped zinc sulfide phosphor.

MTF 측정을 통한 비정질 셀레늄 기반의 디지털 방사선 검출기의 영상 질 평가에 관한 연구 (Image Quality of Amorphous Selenium DR system using MTF measurement)

  • 석대우;박지군;최장용;남상희;강신원
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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    • pp.384-387
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    • 2003
  • In this paper, the evaluation of image quality was performed for digital radiography which is developing in using amorphous selenium as a photoconductor material for the purpose of offering basic research data and measurement technique about Medical Imaging Quality. So Modulation Transfer Function as a main factor of imaging quality evaluation was investigated by slit method. For measurement of MTF, Nuclear associates. 07-624 Slit camera image was obtained to study the variation of MTF corresponding to changing spatial frequency. And Presampling MTF was estimated by slit camera image with $10\;{\mu}m$ width at Digital Radiography. In this study, the obtained data demonstrates that the clinical value of a direct conversion type digital radiation detector using the amorphous selenium, which is being developed by domestic technology.

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a-Se 기반의 혼합형 X-선 검출기에서 유전층의 누설전류 저감효과 (The dark-current and X -ray sensitivity measurement of hybrid digital X-ray detector having dielectric layer structure)

  • 석대우;박지군;조진욱;이동길;문치웅;남상희
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 춘계학술대회 논문집 센서 박막재료 반도체재료 기술교육
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    • pp.31-34
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    • 2002
  • In this paper, the electric properties of amophous selenium multilayer samples has been investigated. In order to develop the hybrid flat-panel digital· X-ray image detector, we measured and analyzed their performance parameters such as the X -ray sensitivity and dark-current for a amophous selenium multilayers X-ray detector with a phosphor layer, The hybrid digital X-ray image detector can be constructed by integrating a phosphor layer (or a scintillative layer) that convert X-ray to a light on a-Se photoconduction mulilayers that convert a light to electrical signal. As results, the dielectric materials such as parylene between the phosphor layer and the top electrode may reduce the dark-current of the samples. Amorphous selenium multilayers having dielectric layer(parylene) has characteristics of low dark-current, high X-ray sensitivity. So we can acquired a enhanced signal to noise ratio. In this paper offer the method can reduce the dark-current in the hybrid X-ray detector.

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X-ray Sensitivity of Hybrid-type Sensor based on CaWO4-Selenium for Digital X-ray Imager

  • Park, Ji-Koon;Park, Jang-Yong;Kang, Sang-Sik;Lee, Dong-Gil;Kim, Jae-Hyung;Nam, Sang-Hee
    • Transactions on Electrical and Electronic Materials
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    • 제5권4호
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    • pp.133-137
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    • 2004
  • The development of digital x-ray detector has been extensively progressed for the application of various medical modalities. In this study, we introduce a new hybrid-type x-ray detector to improve problems of a conventional direct or indirect digital x-ray image technology, which composed of multi-layer structure using a CaWO$_4$ phosphor and amorphous selenium (a-Se) photoconductor. The leakage current of our detector was found to be ∼180 pA/cm$^2$ at 10 V/m, which was significantly reduced than that of a single a-Se detector. The x-ray sensitivity was measured as the value of 4230 pC/cm$^2$/mR at 10 V/m. We found that the parylene thin film between a CaWO$_4$ phosphor and an a-Se layer acts as an insulator to prevent charge injection from indium thin oxide (ITO) electrode into an a-Se layer under applied bias.