• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.7
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• pp.400-403
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• 2016

The resistive memory switching characteristics of resistive random access memory (ReRAM) using the amorphous GeSe thin film have been demonstrated at Al/Ti/GeSe/$n^+$ poly Si structure. This ReRAM indicated bipolar resistive memory switching characteristics. The generation and the recombination of chalcogen cations and anions were suitable to explain the bipolar switching operation. Space charge limited current (SCLC) model and Poole-Frenkel emission is applied to explain the formation of conductive filament in the amorphous GeSe thin film. The results showed characteristics of stable switching and excellent reliability. Through the annealing condition of $400^{\circ}C$, the possibility of low temperature process was established. Very low operation current level (set current: ~ ${\mu}A$, reset current: ~ nA) was showed the possibility of low power consumption. Particularly, $n^+$ poly Si based GeSe ReRAM could be applied directly to thin film transistor (TFT).

• Macromolecular Research
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• v.15 no.7
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• pp.662-670
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• 2007

The crystallization behavior and fine structure of poly(ethylene terephthalate) (PET)/A-zeolite nanocomposites were assessed via differential scanning calorimetry (DSC) and time-resolved small-angle X-ray scattering (TR-SAXS). The Avrami exponent increased from 3.5 to approximately 4.5 with increasing A-zeolite contents, thereby indicating a change in crystal growth formation. The rate constant, k, evidenced an increasing trend with increases in A-zeolite contents. The SAXS data revealed morphological changes occurring during isothermal crystallization. As the zeolite content increased, the long period and amorphous region size also increased. It has been suggested that, since PET molecules passed through the zeolite pores, some of them are rejected into the amorphous region, thereby resulting in increased amorphous region size and increased long period, respectively. In addition, as PET chains piercing into A-zeolite pores cannot precipitate perfect crystal folding, imperfect crystals begin to melt at an earlier temperature, as was revealed by the SAXS profiles obtained during heating. However, the spherulite size was reduced with increasing nanofiller content, because impingement between adjacent spherulites in the nanocomposite occurs earlier than that of homo PET, due to the increase in nucleating sites.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.1
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• pp.6-12
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• 2013

Aerosol deposition(AD) coating that enable fabricate films at low temperature have begun to be widely researched for the integration of ceramics as well to realize high-speed deposition rates. For application of ceramic thick film by AD to display and electronic ceramic industry, fabrication of dense structure with a no cracking is required. In this study, to fabricate dense ceramic thick film, the effect of crystal phase of starting powder was investigated. For this study, amorphous and crystalline $SiO_2$ powders were used as starting powders. Two types of $SiO_2$ powders were deposited on glass substrate by AD. In the case of amorphous $SiO_2$ powder, the deposited films had extremely incompact and opaque layer, irrespective of particle size. In contrast to amorphous powder, in the case of crystalline powder, porous structure layer and dense microstructure with no cracking layer were fabricated depending on the particle size. The optimized starting powder size for dense coating layer was $1{\sim}2{\mu}m$. The transmittance of film reached a maximum of 76% at 800 nm.

• Journal of the Korean institute of surface engineering
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• v.29 no.5
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• pp.549-555
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• 1996

Diamond Like Carbon film is amorphous film which is considered to consist of three coordinate graphite structure and tetrahedron coordinate diamond structure. Its hardness, thermal conductivity and chemical stability are nearly to one of diamond. It is well known to become semi-conductor by doping of inpurity. In this study Diamond Like Carbon film was synthesized by Microwave Plasma CVD in the gas mixture of hydrogen-methan-nitrogen and doped of nitrogen on the single-crystal silicon or silica glass. The temperature of substrate and nitrogen concentration in the gas mixture had an effect on the bonding state, structural properties and conduction mechanism. The surface morphology was observed by Scanning Electron Microscope. The strucure was analyzed by laser Raman spectrometry. The bonding state was evaluated by electron spectroscopy. Diamond Like Carbon film synthesized was amorphous carbon containing the $sp^2$ and $sp^3$ carbon cluster. The number of $sp^2$ bonding increased as nitrogen concentration increased from 0 to 40 vol% in the feed gas at 1233K substrate temperature and at $7.4\times10^3$ Pa. Increase of nitrogen concentration made Diamond Like Carbon to be amorphous and the doze of nitragen could be controlled by nitrogen concentration of feed gas.

• Korean Journal of Materials Research
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• v.12 no.2
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• pp.140-145
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• 2002

This study was conducted to investigate the brazing characteristics between Zircaloy-4 nuclear fuel cladding tubes and bearing pads with filler metals of amorphous $Zr_{1-x}Be_x$(0.3$\leq$x$\leq$0.5) binary alloy, in which they were produced in the ribbon form by the melt-spinning metod. The crystallization behavior, stability, hardness and micro-structure of brazed zone were examined by X-ray diffraction, differential scanning calorimetry, micro-Vickers hardness test, optical microscopy, and transmission electron microscopy. $Zr_{1-x}Be_x$(0.3$\leq$x$\leq$0.4) amorphous alloys were crystallized to $\alpha$-Zr with increasing the temperature, and the rest were transformed to ZrBe$_2$at higher temperatures. On the other hand, $Zr_{1-x}Be_x$(0.4$\leq$x$\leq$0.5) amorphous alloys were crystallized to $\alpha$-Zr and ZrBe$_2$, simultaneously. The thickness of the layer brazed with amorphous alloy was increased with increasing the beryllium content due to the higher diffusion of Be. The morphology of brazed layer with PVD Be filler metal showed dendrite while that brazed with amorphous alloys appeared globular. Micro-Vickers hardness of brazed zone increased as the beryllium content of filler metal was decreased.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1071-1074
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• 2006

Ca/Ag double layer which is fabricated by thermal evaporation exists as the double layer of (Ca+O)/(Ag+Ca). In Ca layer, are crystalline Ca(OH)2 and amorphous Ca and in Ag layer, are crystalline Ag and amorphous Ca. And for the certain thickness of Ag, in the Ca/Ag double layer, the thicker Ca is, the higher transmittance is.

• Journal of Magnetics
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• v.4 no.1
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• pp.1-4
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• 1999

The microstructure and magnetic properties of$ Fe_{87}Zr_7Si_4B_2$ nanocrystalline alloys were studied by magnetization measurements and M ssbauer spectrometry over a wide temperature range. Three well resolved spectral components have been found and attributed to bcc-Fe grains (with almost pure iron structure), residual amorphous matrix enriched with solute elements and interfaces formed at the grain-matrix boundaries. It has been shown that, contrary to the expectation, during crystallization the atomic segregation occurs leading to the formation of primary bcc-Fe grains and the partition of Si atoms into the residual amorphous matrix.

• Journal of the Korean Magnetics Society
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• v.5 no.5
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• pp.343-350
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• 1995

An overview will be given on recent Mossbauer and magnetization investigation of the applied field dependence of the magnetic properties of typical systems without strong magnetic anisotropy and showing the absence of magnetic saturation in high fields (including iron-rich spin glass (amorphous $Fe_{93}Zr_{7}$, soft ferromagnets (amorphous $Fe_{88}Zr_{12}$, $Fe_{70}Ni_{20}Zr_{10}$ and $Fe_{88}B_{12}$) and pure Fe). The results emphasize that shape anisotropy due to surface irregularities causes misalignment between the magnetization and the applied field in the otherwise collinear magnetic structure.

• Journal of the Korean Ceramic Society
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• v.38 no.1
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• pp.100-105
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• 2001

An all solid-state thin film battery (TFB) was fabricated by growing, undoped and Pt-doped vanadium oxide cathode film ( $V_2$ $O_{5}$ ) on I $n_2$ $O_3$: Sn coated glass, respectively. Room temperature charge-discharge measurements based on Li/Lipon/ $V_2$ $O_{5}$ full-cell structure with a constant current clearly shows that the Pt-doped $V_2$ $O_{5}$ cathode film is superior, in terms of cyclibility. X-ray diffraction (XRD) results indicate that the Pt doping process induces a more random amorphous structure than an undoped $V_2$ $O_{5}$ film. In addition to its modified structure, the Pt-doped $V_2$ $O_{5}$ film has a smoother surface than the undoped sample. Compared to an undoped $V_2$ $O_{5}$ film, the Pt doped $V_2$ $O_{5}$ cathode film has a higher electron conductivity. We hypothesize that the addition of Pt alters electrochemical performance in a manner of making more random amorphous structure and gives an excess electron by replacing the $V^{+5}$. Possible mechanisms are discussed for the observed Pt doping effect on structural and electrochemical properties of vanadium oxide cathode films, which are grown on I $n_2$ $O_3$: Sn coated glass.

• Industry Promotion Research
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• v.1 no.2
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• pp.7-11
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• 2016

$SnO_2$ films were annealed in a vacuum atmosphere conditions to research the temperature dependency of current-voltage characteristics, crystal structure and chemical properties. The $SnO_2$ film annealed in a vacuum became an amorphous structure, but the degree of amorphous structure changed in accordance with the content of oxygen vacancy, which increased at film annealed at $100^{\circ}C$ and then decreased over the sample at annealed at $150^{\circ}C$. Because the crystallinity was affected the content of oxygen vacancy. The oxygen vacancy as carriers disappeared with increasing the annealing temperatures, and the depletion layer increased. Therefore the content of exiton as optical properties increased with becoming the amorphous structure. So the intensity of PL spectra increased with increasing the annealing temperature.