• 한국전기전자재료학회논문지
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• 제13권12호
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• pp.1003-1010
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• 2000

Thin films of vanadium oxide(VOx) have been deposited by r.f. magnetron sputtering from V$_2$O$\_$5/ target in gas mixture of argon and oxygen. Crystal structure, surface morphology, chemical composition, molecular structure and optical properites of films in-situ annealed in O$_2$ambient with various heat-treatment conditions are characterized through XRD, SEM, AES, RBS, RTIR and optical absorption measurements. The films annealed below 200$\^{C}$ are amorphous, and those annealed above 300$\^{C}$ are polycrystalline. The growth of grains and the transition of vanadium oxide into the higher oxide have been observed with increasing the annealing temperature and time. The increase of O/V ratio with increasing the annealing temperature and time is attributed to the diffusion of oxygen and the partial filling of oxygen vacancies. It is observed that the oxygen atoms located on the V-O plane of V$_2$O$\_$5/ layer participate more readily in the oxidation process. Also indirect and direct optical band gaps were increased with increasing the annealing temperature and time.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1993년도 추계학술대회 논문집
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• pp.80-84
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• 1993

In this research, we studied the variation of the dielectric loss absorption of the dielectric loss absorption of the sample according with the change to $\^$60/Co-${\gamma}$-ray irradiation dose of the influence of temperature and applied voltage. In order to investigate the effect of irradiation oriented polypropylene film, we have observed dissipation factor within the temperature range of 30∼130 [$^{\circ}C$] and voltage range of 100∼250$^{\circ}C$ [V]. As for the dependency of temperature by dissipation factor, the ${\alpha}$-peak which appears at high temperature increases accordingly to the increasement of irradiation dose which is contributed by the crystal region and moves towards the high temperature. The ${\beta}$-peak which appears at low temperature is origined from dipoles and molecular motions in the amorphous region. As for the dependency of voltage by tan$\delta$, at low temperature the peak of the tan$\delta$, at low temperature the peak of the tan$\delta$ shifts accordingly to the increasement of irradiation dose towards the high temperature region.

• 한국에너지공학회:학술대회논문집
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• 한국에너지공학회 1996년도 춘계학술발표회 초록집
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• pp.73-87
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• 1996

The outer-most electrons of metal atoms and the remining valence electrons of any molecular atoms make three dimensional crystallizing $\pi$-bondings. The electrons on the $\pi$-bonding orbital rotate clockwise or counter-clockwise and they then make electro-magnetic waves between atoms on the orbital because electron move between plus charged ions. The three dimensional crystallizing $\pi$-bonding orbitals are quantum-mechanically modeled by a cyclic Kronig-Penny Model and energy band structures are analyzed with their potential barrier thickness. The waves generated between plus charged ions are the particular $\pi$-far infrared rays, which have dual properties between material and electro-magnetic waves and can be measured not by modern electro-magnetic tester but biosensor such as finger's force tester. Because the $\pi$-rays can be modulated with electro-magnetic waves it can be applied for harmful electro-magnetic wave killers. Because the $\pi$-rays make new three dimensional crystallizing $\pi$-bonding orbitals in the material the food and drink can be transformed into a helpful physical constitutional property for human health. Distinction between crystalline and amorphous metals is possible because very strong crystalline $\pi$-bonding orbitals can not easily be transformed into another. The $\pi$-rays can also be applied for biofunctional diagnostics and therapy. Gravitational field is one of the electro-magnetic fields. And also magnetic field and gravitational force field make charge's movement. ($\times$ = q, : magnetic field, : force field, q: plus charge, : velocity field)

• 한국재료학회지
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• 제20권4호
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• pp.199-203
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• 2010

Hybridization of semiconductor materials with carbon nanotubes (CNTs) is a recent field of interest in which new nanodevice fabrication and applications are expected. In this work, nanowire type GaAs structures are synthesized on porous single-wall carbon nanotubes (SWCNTs) as templates using the molecular beam epitaxy (MBE) technique. The field emission properties of the as-synthesized products were investigated to suggest their potential applications as cold electron sources, as well. The SWCNT template was synthesized by the arc-discharge method. SWCNT samples were heat-treated at $400^{\circ}C$ under an $N_2/O_2$ atmosphere to remove amorphous carbon. After heat treatment, GaAs was grown on the SWCNT template. The growth conditions of the GaAs in the MBE system were set by changing the growth temperatures from $400^{\circ}C$ to $600^{\circ}C$. The morphology of the GaAs synthesized on the SWCNTs strongly depends on the substrate temperature. Namely, nano-crystalline beads of GaAs are formed on the CNTs under $500^{\circ}C$, while nanowire structures begin to form on the beads above $600^{\circ}C$. The crystal qualities of GaAs and SWCNT were examined by X-ray diffraction and Raman spectra. The field emission properties of the synthesized GaAs nanowires were also investigated and a low turn-on field of $2.0\;V/{\mu}m$ was achieved. But, the turn-on field was increased in the second and third measurements. It is thought that arsenic atoms were evaporated during the measurement of the field emission.

• 한국자기학회지
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• 제20권6호
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• pp.212-215
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• 2010

비정질 Ga 박막은 벌크에 비해 높은 초전도 임계온도와 임계자기장 값을 보이나 그 특성은 불안정하여 상온에 한번 노출되면 그 초전도 특성을 잃어버리게 된다. 이 논문에서는 Ga/Al 두층 박막을 제작하여 이러한 비정질 Ga 박막의 불안정한 초전도 특성을 개선할 뿐만 아니라 기존의 스핀검출에 응용되고 있는 Al 박막을 대체할 수 있는 가능성을 연구하였다. 극초진공 분자빔박막 증착장비(UHV-MBE)를 사용하여 Ga/Al 두층 박막을 제작하고, 표면의 적절한 플라즈마 산화 처리에 의한 Ga/Al/$Al_2O_3$/Fe의 터널 접합구조를 제작하여 Ga/Al 박막의 초전도 특성을 측정하였다. 한편, Ga/Al 박막의 표면 특성은 Auger 전자 분광기를 이용하여 분석하였다.

• Elastomers and Composites
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• 제46권4호
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• pp.304-310
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• 2011

다리 구조 또는 비다리 구조의 메탈로센 촉매를 이용하여 새로운 구조의 poly(ethylene-ter-1-hexeneter-divinylbenzene) 삼원공중합체를 제조하였다. 다리구조의 rac-$Et[Ind]_2ZrCl_2$ 촉매가 비다리구조의 $Cp_2ZrCl_2$ 촉매보다 상대적으로 양호한 결과를 보여 주었다. 특히 조촉매/촉매 몰비가 3000일 때 촉매활성도는 8000(kg of polymer/$mol{\cdot}h$)이 넘는 매우 높은 수준의 활성도를 보여주었다. 또한, 중합 시간에 따라 중량 평균 분자량이 일정수준까지 점차 증가하는 경향을 나타내었고, 중합시간이 50분일 때 무정형 상태를 나타내었다. 삼원공중합체의 중량평균 분자량은 110,000~200,000, 밀도는 $0.85{\sim}0.89g/cm^3$ 수준이었다. 또한, 삼원 공중합체의 열적 성질과 구조를 확인하였다.

• Biomaterials and Biomechanics in Bioengineering
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• 제2권2호
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• pp.97-109
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• 2015

A series of amphiphilic graft copolymers were synthesized by varying the number of graft chains and graft chain lengths. The polarity of the hydrophobic graft chain on the copolymers was varied their solution properties. The glass transition temperature of the copolymers was in the low-temperature region, because of the amorphous nature of poly (trimethylene carbonate) (PTMC). The surface morphology of the lyophilized colloid gel had a bundle structure, which was derived from the combination of poly(N-hydroxyethylacrylamide)( poly(HEAA)) and PTMC. The solution properties were evaluated using dynamic light scattering and fluorescence measurements. The particle size of the graft copolymers was about 30-300 nm. The graft copolymers with a higher number of repeating units attributed to the TMC (trimethylene carbonate) component and with a lower macromonomer ratio showed high thermal stability. The critical association concentration was estimated to be between $2.2{\times}10^{-3}$ and $8.9{\times}10^{-2}mg/mL$, using the pyrene-based fluorescence probe technique. These results showed that the hydrophobic chain of the graft copolymer having a long PTMC segment had a low polarity, dependent on the number of repeating units of TMC and the macromonomer composition ratio. These results demonstrated that a higher number of repeating units of TMC, with a lower macromonomer composition, was preferable for molecular encapsulation.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 센서 박막재료 반도체재료 기술교육
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• pp.70-73
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• 2002

Thin films of vanadium oxide($VO_{x}$) have been deposited by r.f. magnetron sputtering from $V_{2}O_{5}$ target in gas mixture of argon and oxygen. The oxygen/(oxygen+argon) partial pressure ratio of 0% and 8% is adopted. Crystal structure, chemical composition, molecular structure and optical properties of films sputter-deposited under different oxygen gas pressures and in-situ annealed in vacuum at $400^{\circ}C$ for 1h and 4h are characterized through XRD. RBS, FTlR and optical absorption measurements. The films as-deposited are amorphous and those annealed for time longer than 4h are polycrystalline. $V_{2}O_{5}$ and lower oxides co-exist in sputter-deposited films and as the oxygen partial pressure is increased the films become more stoichiometric $V_{2}O_{5}$. When annealed at $400^{\circ}C$, the as-deposited films are reduced to a lower oxide. It is observed that the oxygen atoms located on the V-O plane of $V_{2}O_{5}$ layer participate more readily in the oxidation and reduction process. The optical transmission of the films annealed in vacuum decreases considerably than the as-deposited films and the optical absorption of all the films increases rapidly between 400 and 550nm.

• 한국전기전자재료학회논문지
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• 제37권4호
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• pp.445-450
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• 2024

The expansion of lithium-ion battery usage beyond portable electronic devices to electric vehicles and energy storage systems is driven by their high energy density and favorable cycle characteristics. Enhancing the stability and performance of these batteries involves exploring solid electrolytes as alternatives to liquid ones. While sulfide-based solid electrolytes have received significant attention for commercialization, research on amorphous-phase glass solid electrolytes in oxide-based systems remains limited. Here, we investigate the glass transition temperatures and sintering behaviors by changing the molecular ratio of Li₂O/B₂O₃ in borate glass comprising Li₂O-B₂O₃-Al₂O₃ system. The glass transition temperature is decreasing as increasing the amount of Li₂O. When we sintered at 450℃, just above the glass transition temperature, the samples did not consolidate well, while the proper sintered samples could be obtained under the higher temperature. We successfully obtained the borate glass ceramics phases by melt-quenching method, and the sintering characteristics are investigated. Future studies could explore optimizing ion conductivity through refining processing conditions, adjusting the glass former-to-modifier ratio, and incorporating additional Li salt to enhance the ionic conductivity.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.122-122
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• 1999

Graphite with its advantages of high thermal conductivity, low thermal expansion coefficient, and low elasticity, has been widely used as a structural material for high temperature. However, graphite can easily react with oxygen at even low temperature as 40$0^{\circ}C$, resulting in CO2 formation. In order to apply the graphite to high temperature structural material, therefore, it is necessary to improve its oxidation resistive property. Silicon Carbide (SiC) is a semiconductor material for high-temperature, radiation-resistant, and high power/high frequency electronic devices due to its excellent properties. Conventional chemical vapor deposited SiC films has also been widely used as a coating materials for structural applications because of its outstanding properties such as high thermal conductivity, high microhardness, good chemical resistant for oxidation. Therefore, SiC with similar thermal expansion coefficient as graphite is recently considered to be a g행 candidate material for protective coating operating at high temperature, corrosive, and high-wear environments. Due to large lattice mismatch (~50%), however, it was very difficult to grow thick SiC layer on graphite surface. In theis study, we have deposited thick SiC thin films on graphite substrates at temperature range of 700-85$0^{\circ}C$ using single molecular precursors by both thermal MOCVD and PEMOCVD methods for oxidation protection wear and tribological coating . Two organosilicon compounds such as diethylmethylsilane (EDMS), (Et)2SiH(CH3), and hexamethyldisilane (HMDS),(CH3)Si-Si(CH3)3, were utilized as single source precursors, and hydrogen and Ar were used as a bubbler and carrier gas. Polycrystalline cubic SiC protective layers in [110] direction were successfully grown on graphite substrates at temperature as low as 80$0^{\circ}C$ from HMDS by PEMOCVD. In the case of thermal MOCVD, on the other hand, only amorphous SiC layers were obtained with either HMDS or DMS at 85$0^{\circ}C$. We compared the difference of crystal quality and physical properties of the PEMOCVD was highly effective process in improving the characteristics of the a SiC protective layers grown by thermal MOCVD and PEMOCVD method and confirmed that PEMOCVD was highly effective process in improving the characteristics of the SiC layer properties compared to those grown by thermal MOCVD. The as-grown samples were characterized in situ with OES and RGA and ex situ with XRD, XPS, and SEM. The mechanical and oxidation-resistant properties have been checked. The optimum SiC film was obtained at 85$0^{\circ}C$ and RF power of 200W. The maximum deposition rate and microhardness are 2$mu extrm{m}$/h and 4,336kg/mm2 Hv, respectively. The hardness was strongly influenced with the stoichiometry of SiC protective layers.