• Proceedings of the Korean Magnestics Society Conference
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• 2006.06a
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• pp.42-43
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• 2006

• Korean Journal of Materials Research
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• v.12 no.11
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• pp.880-882
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• 2002

We have prepared magnetic thin films of FeSiB by sputtering and examined microstructure and magnetic properties of the annealed films in order to investigate the feasibility of the films to microsensor application. Effects of vacuum annealing on the magnetic properties of $Fe_{84}$$Si_{6}$$B_{10}$ films have been examined as a function of temperature. The heating rate and the holding time were 10 K/min and 1 hour, respectively. Vacuum condition was held during cooling to prevent oxidation of the films. The coercivity did not show any noticeable change (~1500 A/m), although the grain size of the crystalline phase in the annealed films increased gradually up to about 16 nm until 673 K. However, both the grain size and the coercivity increased steeply when the annealing temperature increased over 723 K. Since the saturation magnetization is closely related to the phase evolution, the variation of the saturation magnetization of the annealed films was similar to that of the ribbon materials; the thin films were transformed from amorphous to crystalline with $\alpha$-(Fe,Si) phase by increasing annealing temperature.

• Journal of Navigation and Port Research
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• v.35 no.7
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• pp.569-573
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• 2011

In this paper, we developed a Smart Heat Radiating Sheet(SHRS) having the absorption ability of more than 15 dB, and thermal conduction rate more than 20 W/mk for port logistics RFID(Radio Frequency IDentification) system by using AMP(Amorphous Metal Powder) and shielding sheet. Firstly, the EM(Electro_Magnetic) wave absorber samples were fabricated by using AMP and CPE (Chlorinated Polyethylene) with different composition ratios of 80 : 20 wt.% and 85 : 15 wt.%, respectively. Secondly, we fabricated the Smart Heat Radiating Sheet using the shielding sheet to attach EM Wave Absorber. As a result, the Smart Heat Radiating Sheet with absorption ability of 16 dB at 433 MHz and thermal conduction rate is 24 W/mk has been developed with the composition ratio of Amorphous Metal Powder : CPE = 85 : 15 wt.% and thickness of 5.5 mm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05a
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• pp.35-39
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• 2002

A defect detection test was performed for a conductor using a amorphous wire sensor head. A uniform magnetic field was applied in the space between the most inner conductors of a spiral-typed coil. The conductor with a defect was placed on the space between the most inner conductors of spiral-typed coil. The defect can be detected from the differences of induced voltage measured in the vicinity of gap of the conductor. The induced voltage difference of 2.5mV was measured in the gap vicinity of the 1mm thick conductor having 0.5mm gap in the frequency region of 100kHz~600kHz.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.1270-1273
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• 2004

The combination of methane-chemical activation and Self-propagating High-temperature synthesis (SHS) has widened the possibilities for both methods. For YBCO systems the investigation showed that a short-term mechano-chemical activation of initial powders before SHS leads to single-phase and ultra-fine products. A new technique for preparation ultra-fine high-temperature superconductors of YBCO composition with a grain size d < $1{\mu}m$ is developed. The specific feature of the technique is formation of the $YBa_2Cu_3O_{7-x}$ crystalline lattice directly from an X-ray amorphous state arising as a result of mechanical activation of the original oxide mixture. The technique allows the stage of formation of any intermediate reaction products to be ruled out. X-ray and magnetic studies of ultra-fine high temperature superconductors (HTS) are carried out. Dimension effects associated with the microstructure peculiarities are revealed. A considerable enhancement of inter-grain critical currents is found to take place in the ultra-fine samples investigated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.267-270
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• 2003

We have studied the interfacial diffusion phenomena and the role of ${\alpha}-Al_2O_3$ buffer layer as a diffusion barrier in the $Ba-ferrite/SiO_2$ magnetic thin films for high-density recording media. In the interface of amorphous Ba-ferrite ($1900-{\AA}-thick)/SiO_2$ thin film during annealing, the interfacial diffusion started to occur at ${\sim}700^{\circ}C$. As the annealing temperature increased up to $800^{\circ}C$, the interfacial diffusion abruptly proceeded resulting in the high interface roughness and the deterioration of the magnetic properties. In order to control the interfacial diffusion at the high temperature, we introduced ${\alpha}-Al_2O_3$ buffer layer ($110-{\AA}-thick$) in the interface of $Ba-ferrite/SiO_2$ thin film. During the annealing of $Ba-ferrite/{\alpha}-Al_2O_3/SiO_2$ thin film even at ${\sim}800^{\circ}C$, the interface was very smooth. The smooth interface of the film was also clearly shown by the cross-sectional FESEM. The magnetic properties, such as saturation magnetization 3nd intrinsic coercivity, were also enhanced, due to the inhibition of interfacial diffusion by the ${\alpha}-Al_2O_3$ buffer layer. Our study suggests that the ${\alpha}-Al_2O_3$ buffer layer act as a useful interfacial diffusion barrier in the $Ba-ferrite/SiO_2$ thin films.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.217-217
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• 2016

The amorphous InGaZnO (a-IGZO) is widely accepted as a promising channel material for thin-film transistor (TFT) applications owing to their outstanding electrical properties [1, 2]. However, a-IGZO TFTs have still suffered from their bias instability with illumination [1-4]. Up to now, many researchers have studied the sub-gap density of states (DOS) as the root cause of instability. It is well known that defect states can influence on the performances and stabilities of a-IGZO TFTs. The defects states should be closely related with the deposition condition, including sputtering power, and pressure. Nevertheless, it has not been reported how these defects are created during conventional RF magnetron sputtering. In general, during conventional RF magnetron sputtering process, negative oxygen ions (NOIs) can be generated by electron attachment in oxygen atom near target surface and then accelerated up to few hundreds eV by a self-bias; at this time, the high energy bombardment of NOIs induce defects in oxide thin films. Recently, we have reported that the properties of IGZO thin films are strongly related with effects of NOIs which are generated during the sputtering process [5]. From our previous results, the electrical characteristics and the chemical bonding states of a-IGZO thin films were depended with the bombardment energy of NOIs. And also, we suggest that the deep sub-gap states in a-IGZO as well as thin film properties would be influenced by the bombardment of high energetic NOIs during the sputtering process.In this study, we will introduce our novel technology named as Magnetic Field Shielded Sputtering (MFSS) process to prevent the NOIs bombardment effects and present how much to be improved the properties of a-IGZO thin film by this new deposition method. We deposited a-IGZO thin films by MFSS on SiO2/p-Si and glass substrate at various process conditions, after which we investigated the morphology, optical and electrical properties of the a-IGZO thin films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.581-584
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• 2003

The phase differences and noise signals are in general serious on output of a instrumentation amplifier for signal conditioning of a sensor driven at high frequency due to a time-varying input signal. In this study, we get the better amplification and S/N ratio using the rectified signal for the input of instrumentation amplifier. This driving circuits were designed and constructed by OrCAD and laboratory PCB process. All of the elements used on the circuit including highly speedy OP-Amp. was SMD type and the MI sensor was fabricated by meander-patterned amorphous ribbon. The output sensitivity of this circuit was $105.3mV/V{\cdot}Oe$. That's why this driving circuit is good at detection of fine magnetic field.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.621-624
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• 1999

Metalization technology of the fine patterns by electroless plating is required in place of electrodeposition as high-density printed boards(PCR) become indispensable with the miniaturization of electronic components. Electroless nickel plating is a suitable diffusion barrier between conductor meta1s, such as Al and Cu and solder is essetional in electronic packaging in order to sustain a long period of service. Moreover, Electroless nickel has particular characteristics including non-magnetic property, amorphous structure. wear resistance, corrosion protection and thermal stability In this study fundamental aspects of electroless nickel deposition were studied with effort of complexeing agents of different kinds. Then the property of electroless deposit are controlled by the composition of the deposition solution the deposition condition such as temperature and pH value and so on. the characteristics of the deposits has been carried out.

• Electrical & Electronic Materials
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• v.8 no.2
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• pp.229-236
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• 1995

Multimedia has created a system environment that needs a combination of diverse peripherals, faster I/O, and easier configuration. The sheer volume of data one can expect with multimedia hardware and applications storage systems of higher capacity and faster data transfer rate. Unlike the magneto-optical(MO)disk technology which uses bias magnetic field in writing, both the reading and the writing in the phase change (PC) technology are performed only by laser light. In PC optical media, an active layer is reversibly converted between amorphous state and crystalline state by changing irradiation conditions of focused laser beam. Thus, as compared with MO disk, the PC disk has such great advantages that signals can be reproduced by change of reflectance of laser beams in the same manner as the compact disc. The reflectivity of a phase-change spot can be altered in a single pass under the head only through modulation of laser power. The principles and the current status of phase-change optical recording media combined with possible applications are discussed in the present article.