• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.478-480
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• 2001

Fe-base amorphous films exhibit large saturation magnetostriction and soft magnetic Properties, which make them suitable for strain sensor applications. Most important material properties for the performance of these elements are the superior soft magnetic properties, such as high permeability and small coercive force, as well as magnetoelastic properties. It is well known that the strain generated in film deposition and/or post-heat treatment processes is one of important material properties, which effects on the soft magnetic properties of the film via magnetoelastic coupling. In this study, the effect of an isotropic strain in plane of magnetic films have been performed experimently. Amorphous films with the composition of (F $e_{90}$ $Co_{10}$)$_{78}$S $i_{l2}$ $B_{10}$ were employed in this study. The film with 5${\mu}{\textrm}{m}$ thick was deposed onto the polyimide substrate with 50${\mu}{\textrm}{m}$ thick by virtue of RF sputtering. The film was subject to post annealing with a static magnetic field with 500Oe magnetic field intensity at 35$0^{\circ}C$ for 1 hour. The polyimide substrate with the film was bonded with an adhesive on PZT piezoelectric substrate with 600${\mu}{\textrm}{m}$ thick in applying voltage of 500V. The change in MH loops of films due to the isotropic strain was measured by using VSM. The coercive force was evaluated from MH loops. It has shown in the results that M-H loops of films are subject to change considerably with a dc voltage, resulting of the magnetization rotation from normal to plane direction as the applied voltage is changed from 500V to 250V.50V.V.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.6
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• pp.486-492
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• 1998

The amorphous Co-based magnetic films have a large saturation flux density, a low coercive force, and a zero magnetostriction constant. Therefore, they have been studied for application to magnetic recoding heads and micro magnetic devices. However, it was found that the magnetic anisotropy was changed for each film fabrication processes. In this study, we investigated how to control the anisotropy of sputtered amorphous $Co_{89}Nb{8.5}Zr{2.5}$ films. After deposition, the rotational field annealing ant the uniaxial field annealing were performed under the magnetic field of 1.5 kOe. the annealing was done at the temperature range from 400 to $600^{\circ}C$ for one hour. As-deposited amorphous $Co_{89}Nb{8.5}Zr{2.5}$ thin film had saturation magnetization ($4\piM_5$) of 0.8 T, coercive force($_IH_C$) of 1.5 Oe, and anisotropy field($H_k$) of 11 Oe. The amorphous $Co_{89}Nb{8.5}Zr{2.5}$ thin films annealed by rotational field annealing at $500^{\circ}C$ for one hour was found to be isotropy, and $4\piM_5$ of 0.9 T was obtained from these films, Also, the magnetic anisotropy of as-deposited films could be controlled by uniaxial field annealing at $400^{\circ}C$ for one hour. Anisotropy field($H_k$) of 17 Oe and $4\piM_5$ of 1.0 T were obtained by this method.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.05a
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• pp.120-122
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• 1994

We examined the magnetic properties as a function of annealing temperature of the as-quenched $Fe_{87}Zr_{7}B_{5}Ag_{1}$ amorphous alloy. The values of $H_{c}$=30m0e, $B_{a}$=0.44T and ${\mu}$i=146000 at $300^{\circ}C$ annealing treatment are obtained. The excel lent soft magnetic properties seem to result from the annihilation of quenching-Induced internal stress by the heat treatment and the change of microstructure due to the different relaxation behavior owing to adding insoluble element such as Ag. Therefore, the $Fe_{87}Zr_{7}B_{5}Ag_{1}$ amorphous alloy is quite promising for practical use as a core material in various transformers of high transformers of high frequency.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.2
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• pp.163-168
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• 2001

This dissertation describes the development of a sensor for measuring microscopic displacement where we use CoFeSiB amorphous alloy magnetic ribbon having near zero magnetostrictive properties. For the development of the sensor, we first fabricate amorphous alloy magnetic ribbon, and then investigate its physical and magnetic properties. Finally, its possibility of practical application as a displacement sensor is discussed. The experimental samples were made of near zero magnetostrictive (Co$\_$0.94/Fe$\_$0.06/)$\_$9/Si$_2$B$\_$19/ alloy which were fabricated by a rapid liquid quenching method. As a results, we got amorphous alloy magnetic ribbons of 12㎛ in thickness, 10 mm in length, and 2.5 m in width. It was found that the crystallization temperature and the Curie temperature are around 451$\^{C}$ and around 441$\^{C}$ respectively. We couldn't observe any noticeable change of the impedance frequency of 10MHz, but observed the impedance change of 3.76 %/Oe at 100 MHz. The inductance was nearly stable over the frequency range of 1∼10 MHz, In addition, it was observed that the variation of the inductance and the impedance were linear within the displacement ranges of 20∼60㎛. As the results of the experiments, it is suggested that the displacement sensor which is fabricated by using amorphous alloy magnetic ribbon of (Co$\_$0.04/Fe$\_$0.06/)$\_$79/Si$_2$B$\_$19/ compound, can be used as a sensor to detect microscopic displacement.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.05a
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• pp.27-30
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• 1996

In this paper, we prove through the experiments the possibility that Co-amorphous magnetic films can be used as high sensibility materials. We fabricate amorphous film of Fe$\sub$4.7/Co$\sub$74.3/Si$_2$B$\sub$19/ by using sputtering method at high frequency. Then, we not only measure the magnetic Properties of the annealed samples, but also observe the magnetic domain by using an Kerr effect optical-microscope. As the result, we find that the samples have high sensibility

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.788-789
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• 2006

Microstructure and soft magnetic properties of bulk amorphous and/or nanocrystalline $Fe_{73.5}Cu_1Nb_3Si_{13.5}B_9$ alloys prepared by consolidation at 5.5GPa were investigated. The relative density of the bulk sample 1 (from amorphous powders) was 98.5% and the grain sizes were about 10.6nm. While the relative density and grain sizes of bulk sample 2 (from nanocrystalline powders) are 98% and 20.1nm, respectively. Particularly, the bulk samples exhibited a good combined magnetic property: for Sample1, $M_s=125emu/g$ and $H_c=1.5Oe;$ for Sample2, $M_s=129emu/g$ and $H_c=3.3Oe$. The success of synthesizing the nanocrystalline Fe-based bulk alloys will be encouraging for the future development of bulk nanocrystalline soft magnetic alloys.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.5
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• pp.413-417
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• 1998

In this paper, we investigate frequency dependance of inductance of FeCoB amorphous magnetic films. $(Fe_{1-x}Co_x)_{79}Si_2B_{19}$ was used as the basic composition of amorphous magnetic film having near zero magnetostriction. The amorphous magnetic films were fabricated with x=0.94 and x=0.95 by using sputtering method at high frequency. The films were anneald under non-magnetic field and near crystallization temperatures(30min at $280^{\circ}C$, 30min and 1hr at $400^{\circ}C$, respectively). As the results of the experiments with the fabricated films, the lowest coercive force was 0.084[Oe] at 400[W] of the input power and the crystallization temperature was $360^{\circ}C$ . In the case 30min at 40$0^{\circ}C$ the inductance value in the low frequency with x=0.95 was higher by 488% than that with x=0.94. The quality factor Q was below 0.7 for all samples. We obtained the highest quality value at 400[KHz] with 30min at $280^{\circ}C$ and x=0.94. The value was about 0.62. Also, the quality factor value was about 0.35 at 1[MHz] with 30min at $280^{\circ}C$ and x=0.95.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.77-80
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• 2001

Crystallographic and magnetic characteristics of CoCr-based magnetic thin film for perpendicular magnetic recording media were influenced on preparing conditions. In these, there is that substrate temperature was parameter that increases perpendicular coercivity of CoCrTa magnetic layer using recording layer. While preparation of CoCr-based doublelayer, by optimizing substrate temperature, we expect to increase perpendicular anisotropy of CoCr magnetic layer and prepare ferromagnetic recording layer with a good quality by epitaxial growth. CoCrTa/Si doublelayer showed a good dispersion angle of c-axis orientation $\Delta$$\theta$$_{50}$ caused by inserting amorphous Si underlayer which prepared at underlayer substrate temperature 250C. Perpendicular coercivity was constant, in-plane coercivity was controlled a low value about 2000e. This result implied that Si underlayer could restrain growth of initial layer of CoCrTa thin film, which showed bad magnetic properties effectively without participating magnetization patterns of magnetic layer. In case of CoCrTa/Si that prepared with ultra thin underlayer, crystalline orientation of CoCrTa was improved rather underlayer thickness 1nm, it was expected that amorphous Si layer played a important role in not only underlayer but also seed layer.t also seed layer.r.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.463-465
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• 2002

In order to increase perpendicular magnetic anisotropy of magnetic layer and prepare magnetic recording layer with a good quality by epitaxial growth between magnetic layer and, we prepared Co$\_$77/Cr$\_$20/Ta$_3$/Si doublelayer for perpendicular magnetic recording media which was promoted as next generation recording media on slide glass substrate. The thickness of magnetic layer and Underlayer were varied from 20 to 100 nm and 5 to 100 m, respectively. The surface morphology and crystal structure of the CoCrTa/Si film were examined with XRD and AFM. Prepared thin films showed improvement of dispersion angle of c-axis orientation Δ$\theta$$\_$50/ caused by inserting amorphous Si underlayer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.04a
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• pp.3-6
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• 2002

Effect of Ag additive element on microstructure of $Fe_{87-x}Zr_7B_6Ag_x$, magnetic thin films on Si(001) substrates has been investigated using Transmission Electron Microscopy(TEM) and X-ray Diffraction(XRD). All samples with additive Ag element were made by DC-sputtering and subjected to annealing treatments of $300^{\circ}C{\siim}600^{\circ}C$ for 1 hr. TEM and XRD showed that perfectly amorphous state in Ag-free Fe-based films was observed in as-deposited condition. The as-deposited Fe-based films with the presence of Ag constituent have a mixture of Fe-based amorphous and nano-sized Ag crystalline phases. In this case, additive element, Ag was soluted into Fe-based matrix. With the increase in additive element, Ag, insoluble nano-crystalline Ag particles were dispersed in the Fe-based amorphous matrix. Crystallization of Fe-based amorphous phase in the matrix of $Fe_{82}Zr_7B_6Ag_5$ thin films occurred at an annealing temperature of $400^{\circ}C$. Upon annealing, the amorphous-Ag crystalline state of Fe-Zr-B-Ag films was transformed into the mixture of Ag crystalline phase + Fe-based amorphous phase + ${\alpha}$-Fe cluster followed by the crystallization process of ${\alpha}$-Fe nanocrystalline + Ag crystalline phases.