• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.33-33
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• 2010

Electrical properties of organic light-emitting diodes (OLEDs) were simulated by S.co's program. The OLEDs have stable operating parameters, high luminance, and high efficiency in simulation. The AF stands for amorphous fluoropolymer in simulation, and it was used as a hole-injection layer. In the five structure of OLEDs, an AF layer is sandwiched between the hole-transport layer and the ITO layer to increase the external quantum efficiency. By considering organic light-emitting diodes using an optimal energy gap of AF, it could contribute to the improvement of the efficiency of the device in the simulation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.9
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• pp.750-754
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• 2011

In this research, the electric characteristic of organic light-emitting diodes(OLEDs) was studied depending on thickness of amorphous fluoropolymer(Teflon-AF) which is the material of hole injection layer to improve electric characteristic of OLEDs. Sample composition was fabricated in double layer. The basic structure was fabricated by ITO/tris(8-hydroxyquinoline) aluminum (Alq3)/Al and the 2 layer was fabricated by ITO/2,2-Bistrifluoromethyl-4,5-Difluoro-1,3-Dioxole(Teflon-AF)/tris(8-hydro xyquinoline) aluminum (Alq3)/Al. The experiment was carried with variation of thickness of Teflon-AF at 1.0, 2.0, 2.5, 3.0 nm. The result showed when Teflon-AF thickness was 2.5 nm, the electric and optical characteristic were well performed. Moreover, when it was compared with Teflon-AF without materials, it was improved 15.1 times more on luminance, 12.7 times more on luminous efficiency and 12.1 times more on external quantum efficiency. Therefore, OLEDs element with optimum hole injection layer reduced energy barrier and driving voltage, and confirmed that it improved efficiency widely.

• Proceedings of the Membrane Society of Korea Conference
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• 2008.05a
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• pp.81-84
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• 2008

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.115-115
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• 2015

Many efforts have been devoted on chemical modification of graphene layer to modulate its electrical properties. In the previous report, laser irradiation on the CYTOP (Amorphous Fluoropolymer) covered graphene layer induces chemical modification wherein carbon fluoride is formed on the graphene surface. This results in the insulating I-V characteristics, which have been attracting much research interests on it. However, the direct analytical evidence of the fluoride formation on graphene surface is not yet studied. In this work we investigated what happened on the CYTOP/graphene interface during photon irradiation using spatially resolved photoemission spectroscopy method. It is found that the soft x-ray (614 eV) induces desorption of fluoride atoms from the CYTOP and change di-fluoride form to mono-fluoride. As the photo-induced fluorine desorption is continue strong dipole field generated by initial di-fluoride forms is gradually decreased, resulting in the overall binding energy shift of the C 1s core levels. Both photo-modified CYTOP and CYTOP starts to desorb above $286^{\circ}C$ (~ 0.047 eV), which means that no strong chemical interaction between CYTOP and graphene is established.