• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.644-647
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• 2001

Amorphous As-Ge-Se-S thin films have been studied with the aim of identifying optimum etching condition which can be used to produce holographic grating structure for use as diffractive optical elements. In this study, holographic gratings have been formed using He-Ne laser(632.8nm), and fabricated by the method of wet etching using NaOH etchant with various concentration(0.26N, 0.33N, 0.40N). The diffraction efficiency was obtained by +1st order intensity of the diffracted beam. The formed grating profiles were observed by atomic force microscope and showed that the expected grating profile could be achieved by controlling the etching time. Over-etching resulted in under-cutting of the grating lines. The highest 1st order diffraction efficiency for these gratings was about 5.05%.

• 정보저장시스템학회:학술대회논문집
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• 정보저장시스템학회 2005년도 추계학술대회 논문집
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• pp.124-127
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• 2005

Rewritable optical memory devices such as an CD-RW and DVD+RW are data storage media, which take advantage of the different optical properties in the amorphous and crystalline states of phase change materials. The switching property, structural transformation, transformation kinetics and chemical bindings of $Ge_xSb_{100-x}$($6{\le}x{\le}$34) were studied to investigate the feasibility of applying $Ge_xSb_{100-x}$ alloys in optical memory. The $Ge_xSb_{100-x}$ thin film was deposited by RF magnetron co-sputtering system and phase change characteristics were investigated by X-ray diffraction (XRD), static tester, inductively coupled plasma atomic emission spectrometer (ICP-AES) and atomic force microscopy (AEM). Optimum fiim composition of $Ge_xSb_{100-x}$ was studied and its minimum time fur laser induced crystallization and optical contrast fur phase transition was performed. These results might be correlated with the binding energies between Ge and Sb, and indicate that $Ge_xSb_{100-x}$ have an potential far optical memory applications.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.590-593
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• 2004

본 논문에서는 $As_{40}Ge_{10}Se_{15}S_{35}$ (300nm)박막과 $As_{40}Ge_{10}Se_{15}S_{35}$ (300nm)/Ag(20nm)박막에 홀로그래피 격자를 형성시킨 후 Tg 온도$(240^{\circ}C)$를 기준으로 하여 유리질 천이온도(Tg) 온도 이하 $(190^{\circ}C)$와 이상$(270^{\circ}C)$에서 열처리 시킨 후의 회절효율 변화를 알아보았다. $As_{40}Ge_{10}Se_{15}S_{35}$ (300nm) 박막의 경우 $190^{\circ}C$ : 50%, $240^{\circ}C$ : 약80%, $270^{\circ}C$ : 약 98%의 회절효율 감소가 일어났으며 $As_{40}Ge_{10}Se_{15}S_{35}$(300nm)/Ag(20nm)박막에서는 Tg 온도 이하 즉 $190^{\circ}C$, $240^{\circ}C$ 에서는 회절효율의 변화가 없었으나 Tg온도 이상인 $270^{\circ}C$에서는 약 1.5배 증가한 회절효율을 나타내었다.

• 정보저장시스템학회논문집
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• 제1권1호
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• pp.93-98
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• 2005

Rewritable optical disk is one of the essential data storage media in these days, which takes advantage of the different optical properties in the amorphous and crystalline states of phase change materials. As well known, data transfer rate is one of the most important parameter of the phase change optical disks, which is mostly limited by the crystallization speed of recording media. Therefore, we doped Sn/Bi to $Ge_2Sb_2Te_5$ alloy in order to improve the crystallization speed and investigated the dependence of phase change characteristics on Sn/Bi doping concentration. The Sn/Bi doped $Ge_2Sb_2Te_5$ thin film was deposited by RF magnetron co-sputtering system and phase change characteristics were investigated by X-ray diffraction (XRD), static tester, UV-visible spectrophotometer, electron probe microanalysis (EPMA), inductively coupled plasma mass spectrometer (ICP-MS) and atomic force microscopy (AFM). Optimum doping concentration of Bi and Sn were 5${\~}$6 at.$\%$ and the minimum time for crystallization was below than 20 ns. This improvement is correlated with the simple crystalline structure of Sn/Bi doped $Ge_2Sb_2Te_5$ and the reduced activation barrier arising from Sn/Bi doping. The results indicate that Sn/Bi might play an important role in the transformation kinetics of phase change materials..

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.493-496
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• 2005

비정질 실리콘 (a-Si)의 수소화를 통해 활성화 수소가 비정질 실리콘내의 댕글링본드 (dangling bond) 와 결합 하므로 에너지밴드의 국재준위(localized state)를 감소시켜 불순물 도핑이 가능하게 되므로 a-Si 이 전자소자로서 이용 가능하게 되었다. 이에 착안하여 본 연구에서는 경사($0^{\circ}$, $45^{\circ}$, $80^{\circ}$) 증착을 통해 비정질 칼코게나이드($a-As_{40}Ge_{10}Se_{15}S_{35}$) 박막을 제작하고 그 박막을 수소화처리 (15~20atm at $150\sim190^{\circ}C$)하여 처리 전 후의 surface morphology 변화 및 광학적 특성 변화를 고찰하였다. $a-As_{40}Ge_{10}Se_{15}S_{35}$ 박막의 SEM 측정을 통해 $40^{\circ}$와 $80^{\circ}$ 경사 증착된 $a-As_{40}Ge_{10}Se_{15}S_{35}$ 박막에서 각각 18.8nm 와 160nm의 transition layer와 박막의 기둥(columnar)구조가 형성됨을 관찰하였다. 특히, $80^{\circ}$ 증착박막의 경우 수소처리전 columnar구조는 약 $65\sim70^{\circ}$의 기둥 각을 가지고 형성되었고 수소화 처리를 통해 기둥구조가 붕괴 되었다. $70^{\circ}$ 경사 증착된 $a-As_{40}Ge_{10}Se_{15}S_{35}$ 박막은 $0^{\circ}$에 따른 박막 보다 흡수단 부근에서 약 20%의 투과도 증가와 광 에너지 갭 ($E_{op}$)의 증가를 관찰 할 수 있었다. $80^{\circ}$경사 증착된 수소처리 박막에서 흡수단 부근의 투과도가 약 10%증가 되었고, 광 에너지 갭은 약 0.07eV 증가 하였고, PL intensity는 흡수단 부근에서 증가한 것을 확인 할 수 있었다. 이러한 변화들은 경사 증착된 $a-As_{40}Ge_{10}Se_{15}S_{35}$ 박막 내의 상대적으로 원자 밀도가 큰 기둥(columnar)구조가 생성되고, 이 원자 밀도가 높은 기둥구조의 댕글링본드와 주입된 수소가 흡착하여 에너지대의 국재준위를 감소시키기 때문으로 판단된다.