• 한국신재생에너지학회:학술대회논문집
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• 2011.05a
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• pp.128.1-128.1
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• 2011

In amorphous silicon and crystalline silicon(a-Si:H/c-Si) heterojuction solar cells, intrinsic hydrogenated amorphous silicon(a-Si:H) films play an important role to passivate the crystalline silicon wafer surfaces. We have studied the correlation between the surface passivation quality and nature of the Si-H bonding at the a-Si:H/c-Si interface. The samples were obtained by VHF-CVD under different deposition conditions. The passivation quality and analysis of all structures studied was performed by means of quasi steady state photoconductance(QSSPC) methods and fourier transform infrared spectrometer(FTIR) measurements respectively.

• Journal of the Korean Ceramic Society
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• v.26 no.3
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• pp.371-380
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• 1989

The purpose of this experiment is to elucidate the reaction mechanism concerning to the formation of crystalline BaTiO3 synthesized by adding the pH control agent(KOH soln) in TiCl4 and BaCl2 solution (Wet direct synthetic method). In this expeirment, it is identified that the amorphous barium-titanate having Ba-O-Ti bonding is formed above pH5 due to the -OH- ion and Ti-gel is formed below pH5 due to the polymerization of metatitanic acid. The bonding of the amorphous Ba-O-Ti is identified by FT-IR spectrum and crystallization temperature is about 82$0^{\circ}C$. If the pH of the above system according to the -OH- ion concentration is above 13.8, the polymerized metatitanic acid will be depolymerized and produce [TiO3]2+ion and crystalline BaTiO3 is formed by reacting the produced [TiO3]-- ion with the active Ba++ ion.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.377-380
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• 2004

The phase transition between amorphous and crystalline states in chalcogenide semiconductor films can controlled by electric pulses or pulsed laser beam; hence some chalcogenide semiconductor films can be applied to electrically write/erase nonvolatile memory devices, where the low conductive amorphous state and the high conductive crystalline state are assigned to binary states. GeSbTe(GST), AsSbTe(AST), SeSbTe(SST) used to phase change materials by appling electrical pulses. Thickness of ternary chalcogenide thin films have about 100nm. Upper and lower electrode were made of Al. It is compared with I-V characteristics after impress the variable pulses.

• Carbon letters
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• v.26
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• pp.11-17
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• 2018

Milled carbon fiber (mCF) was prepared by a ball milling process, and X-ray diffraction (XRD) diffractograms were obtained by a $2{\theta}$ continuous scanning analysis to study mCF crystallinity as a function of milling time. The raw material for the mCF was polyacrylonitrile-based carbon fiber (T700). As the milling time increased, the mean particle size of the mCF consistently decreased, reaching $1.826{\mu}m$ at a milling time of 18 h. The XRD analysis showed that, as the milling time increased, the fraction of the crystalline carbon decreased, while the fraction of the amorphous carbon increased. The (002) peak became asymmetric before and after milling as the left side of the peak showed an increasingly gentle slope. For analysis, the asymmetric (002) peak was deconvoluted into two peaks, less-developed crystalline carbon (LDCC) and more-developed crystalline carbon. In both peaks, Lc decreased and $d_{002}$ increased, but no significant change was observed after 6 h of milling time. In addition, the fraction of LDCC increased. As the milling continued, the mCF became more amorphous, possibly due to damage to the crystal lattices by the milling.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.1
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• pp.6-12
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• 2013

Aerosol deposition(AD) coating that enable fabricate films at low temperature have begun to be widely researched for the integration of ceramics as well to realize high-speed deposition rates. For application of ceramic thick film by AD to display and electronic ceramic industry, fabrication of dense structure with a no cracking is required. In this study, to fabricate dense ceramic thick film, the effect of crystal phase of starting powder was investigated. For this study, amorphous and crystalline $SiO_2$ powders were used as starting powders. Two types of $SiO_2$ powders were deposited on glass substrate by AD. In the case of amorphous $SiO_2$ powder, the deposited films had extremely incompact and opaque layer, irrespective of particle size. In contrast to amorphous powder, in the case of crystalline powder, porous structure layer and dense microstructure with no cracking layer were fabricated depending on the particle size. The optimized starting powder size for dense coating layer was $1{\sim}2{\mu}m$. The transmittance of film reached a maximum of 76% at 800 nm.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.06a
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• pp.598-601
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• 2005

Plastic parts are molded for the purpose of mass production in multi-cavity system. Therefore, designer is usually designing molds that has geometrically balanced runner lay-out for filling balance at each cavities. Although, mold is manufactured with geometrically balanced runner lay-out, there are actually filling imbalances in cavities. These filling imbalances phenomenon are caused by complicated interaction between melt and mold. In this study, based on previous studies for filling imbalances in cold-runner mold, filling imbalances in hot-runner mold were investigated by CAE and injection molding experiments. ABS, PMMA as amorphous polymer and PA, PP as crystalline polymer were used to compare the filling imbalances. The filling imbalances decreased as injection rate increased without regard to kind of resins and were lower than the one of cold-runner.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.111-111
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• 2003

The peroxo titanic acid solution was successfully prepared using titanium trichloride as a precursor. The basic properties of the TiO2 film prepared by the solution were investigated in view of phase change, bandgap energy, crystalline size etc. The film displayed amorphous TiO$_2$ at room temperature, anatase above 281$^{\circ}C$ and a mixture of anatase and rutile at 99$0^{\circ}C$, The crystalline size increases with annealing temperatures, while the bandgap energies decrease due to the quantum size effect and the formation of rutile phase which has low bandgap energy. As a result of TG-DTA, it was found that annealing treatment at 99$0^{\circ}C$ for 2h formed a mixtures of anatase and rutile through three steps: (1) the removal of physically adsorbed water (2) the decomposition of peroxo group (3) amorphous-anatase or anatase-rutile phase transformation.

• Journal of the Korean Vacuum Society
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• v.5 no.3
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• pp.218-222
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• 1996

STrained layers and strain depth profile of high dose As ion implanted (100) si wafer annealed at various temperatures have been investigated by means of X-ray double crystal diffractometry (X-ray DCD). The results obtained by x-ray rocking curve analysis showed a defect layer at the original amorphous /crystalline interface of 1400$\AA$ depth. In addition arsenic ion concentrtion profiles and defect distributions in depth were obtained by the SIMS and TRIM -code simulation . the positive strain depth profile determined from the rocking curve analysis were only presented under 0.14 $\mu$m from the surface for samples ananelaed at $600^{\circ}C$. The results was shown that the thickness of amprphous layer is 0.14 $\mu$m indirectry, and it was good agreement with the TRIM -Code simulation. Additionally, it could be thought that the positive strain have been affected residual intersitial atoms under the amorphous/crystalline interface formed by ion implantation.

• Journal of Korean Vacuum Science & Technology
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• v.3 no.2
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• pp.139-144
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• 1999

Hydrogen concentration depth profiles in homoepitaxial Si(001) films grown from hyper-thermal Si beams generated by ultrahigh vacuum (UHV) ion-beam sputtering have been measured by nuclear reaction analyses as a function of film growth temperature and deposition rate. Bulk H concentrations CH in the crystalline Si layers were found tio be below detection limits, 1${\times}$1019cm-3, with no indication of significant H surface segregation at the crystalline/amorphous interface region. This is quite different than the case for growth by molecular-beam epitaxy (MBE) where strong surface segregation was observed for similar deposition conditions with average CH values of 1${\times}$1020cm-3 in the amorphous overlayer. The markedly decreased H concentrations in the present experiments are due primarily to hydrogen desorption by incident hyperthermal Si atoms. Reduced H surface coverages during growth combined with collisionally-induced filling of interisland trenches and enhanced interlayer mass transport provide an increase in critical epitaxial thicknesses by up to an order of magnitude over previous MBE results.

• Transactions of Materials Processing
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• v.16 no.5 s.95
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• pp.386-390
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• 2007

In order to, simultaneously, synthesize and control the size of microstructure of amorphous/crystalline composites, a repeated extrusion process was performed using the gas atomized $Cu_{54}Ni_6Zr_{22}Ti_{18}$ metallic glass powders and the crystalline brasses. The size of microstructure in the resultant composites was varied depending on the pass of extrusion as well as on the area reduction ratio. The microstructure could be estimated using an equation of $r_n=r_{n-1}/R^{1/2}$, where R is reduction ratio and $r_n$ is the resultant radius of the extruded bar after n pass. Theory of microstructural refinement as well as the relationship between the resultant microstructures and mechanical properties was discussed.