• Journal of Magnetics
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• v.2 no.4
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• pp.135-137
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• 1997

We report the salient features of the magnetic properties of amorphous TM70Cr5Si10B15(TM=Fe, Co, Ni) alloys. The temperature dependence of magnetization for amorphous ribbons were measured by a SQUID and a VSM from 5 K to 700 K under an external field of 10 kOe. Except TM70Cr5Si10B15 that shows a paramagnetic behaviour, both Fe and Co based amorphous alloys show a typical ferromagnetic thermo-magnetization curves. For these two ferromagnetic alloys, the saturation magnetization in the temperature range from 5 K to about 0.4 Tc can be descrived by the Bloch relation, Ms (T)=Ms(0) [1-BT3/2-CT5/2]. The spin wave stiffness constants and the range of exchange interaction were analyzed from the magnetization behaviour. The variation of the magnetic properties are discussed and compared with the composition of the alloys.

• Journal of the Korean Magnetics Society
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• v.5 no.5
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• pp.511-514
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• 1995

The crystallization kinetics of $Fe_{73.5}Si_{13.5}B_{9}Cu_{1}Nb_{3}$ amorphous alloy has been investigated using differential scanning calorimetry (DSC). The crystallization process had two stages, i.e. precipitation of the $\alpha$-Fe(Si) solid solution and the tetragonal borides. The isothermal transformation data of the amorphous alloy has been fitted successfully to the generalized Johnson-Mehl-Avrami equation. The mean time exponent, n, obtained is close to 2.5. The value of n=2.5 may be interpreted as being due to a diffusion-controlled transformation process with a constant nucleation rate, one likely transformation mode for the crystallization of metallic amorphous alloys. The activation energy of the overall crystallization process deduced from the time to 50% crystallization are about 81 kcal/mole. The value is of the same order as those estimated from viscous flow.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.1
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• pp.1-4
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• 2008

The electrical characteristics of polycrystalline silicon (poly-Si) thin film transistor (TFT) crystallized by excimer laser annealing (ELA) method were evaluated, The polycrystalline silicon thin-film transistor (poly-Si TFT) has higher electric field-effect-mobility and larger drivability than the amorphous silicon TFT. However, to poly-Si TFT's using conventional processes, the temperature must be very high. For this reason, an amorphous silicon film on a buried oxide was crystallized by annealing with a KrF excimer laser (248 nm)to fabricate a poly-Si film at low temperature. Then, High permittivity $HfO_2$ of 20 nm as the gate-insulator was deposited by atomic layer deposition (ALD) to low temperature process. In addition, the solid phase crystallization (SPC) was compared to the ELA method as a crystallization technique of amorphous-silicon film. As a result, the crystallinity and surface roughness of poly-Si crystallized by ELA method was superior to the SPC method. Also, we obtained excellent device characteristics from the Poly-Si TFT fabricated by the ELA crystallization method.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2013.05a
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• pp.53-54
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• 2013

Nano-multilayered CrAlSiN films consisting of crystalline CrN nanolayers and amorphous AlSiN nanolayers were deposited by cathodic arc plasma deposition. Their oxidation characteristics were studied between 600 and $1000^{\circ}C$ for up to 70 h in air. During their oxidation, the amorphous AlSiN nanolayers crystallized. The formed oxides consisted primarily of $Cr_2O_3$, ${\alpha}-Al_2O_3$, $SiO_2$. The outer $Al_2O_3$ layer formed by outward diffusion of Al ions. Simultaneously, an inner ($Al_2O_3$, $Cr_2O_3$)-mixed layer formed by the inward diffusion of oxygen ions. $SiO_2$ was present mainly in the lower part of the oxide layer due to its immobility. The CrAlSiN films displayed good oxidation resistance, owing to the formation of oxide crystallites of $Cr_2O_3$, ${\alpha}-Al_2O_3$, and amorphous $SiO_2$.

• Journal of the Korean Ceramic Society
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• v.35 no.3
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• pp.259-263
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• 1998

WSi2/CVD-Si/SiO2/Si-substrate의 폴리사이드 구조에서 실리콘 증착 POCl3 확산 그리고 WSi2 증착 유무에 따른 Thin oxide 특성을 연구했다 WSi2 막을 증착하지 않은 CVD-Si/SiO2/Si-substrate 구조에서 CVD-Si을 po-lycrystalline-Si으로 증착한 시편이 amorphous-Si을 증착한 시편보다 산화막 불량이 적다 WSi2 를 증착시킨 WSi2/CVD-Si/SiO2./Si-substrate의 구조에서 CVD-Si의 polycrystalline-Si 혹든 amorphous-Si 의 막 증착에 따른 thin oxide의 불량율 차이는 미미하다 산화막 불량은 CVD-Si에 확산시킨 인(P) 증가 즉 면저항(sheet resistance) 감소로 증가한다. Thin oxide의 절연특성은 WSi2 증착으로 저하된다 WSi2 증착으로 산화막 두께는 증가하나 막 특성은 열등해져 산화막 절연성이 떨어진다.

• Journal of the Mineralogical Society of Korea
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• v.16 no.2
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• pp.161-169
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• 2003

A phase transformation study on a synthetic amorphous diopside, $(Ca,Mg)SiO_3$has been carried out up to ∼30 GPa, and ∼$1000^{\circ}C$ using a diamond anvil cell and YAG laser heating system, respectively. A starting amorphous material shows a direct transition to cubic $(Ca,Mg)SiO_3$perovskite at high pressure, which contradicts to the crystalline diopside phase transformation sequence disproportionating into mixtures of the orthorhombic$ MgSiO_3$perovskite and the cubic $CaSiO_3$perovskite phases. This discrepancy might be due to the different starting materials as well as the temperature variations at each specific experiment performed. The present phase transfor mation sequence would modify the mineralogical assemblage in the Earth transition region and the lower mantle depending upon the pressure, temperature and the oxygen partial pressure.

• Applied Microscopy
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• v.34 no.1
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• pp.23-29
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• 2004

In this study, we introduce the structural analysis of amorphous silica nanoparticles by EF-TEM electron diffraction and in-situ heating experiments. Three diffused rings were observed on the electron diffraction patterns of initial silica nanoparticles, while crystalline spot patterns were gradually appeared during the insitu heating process at $900^{\circ}C$. These patterns indicate the basic unit of $SiO_4$ tetrahedra consisting amorphous silica and gradual crystallization into the ideal layer structure of tridymite by heating. Under high vacuum condition in TEM, SiO nanoparticles were redeposited on the carbon grid after evaporation of SiO gas from $SiO_2$ above $850^{\circ}C$ and the remaining $SiO_2$ were crystallized into orthorhombic tridymite, consistent with ex-situ heating results in furnace at $900^{\circ}C$.

• Journal of the Korean institute of surface engineering
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• v.34 no.5
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• pp.503-509
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• 2001

Thin films of hydrogenated amorphous silicon (a-Si : H) and hydrogenated amorphous silicon carbide (a-SiC:H) of different compositions were deposited on Si(100) wafer and glass by RF plasma-enhanced chemical vapor deposition (RF-PECVD). In the present work, we have investigated the effects of the RF power on the properties, such as optical band gap, transmittance and crystallinity. The Raman data show that the a-Si:H material consists of an amorphous and crystalline phase for the co-presence of two peaks centered at 480 and $520 cm^{-1}$ . The UV-VIS data suggested that the optical energy band gap ($E_{g}$ ) is not changed effectively with RF power and the obtained $E_{g}$(1.80eV) of the $\mu$c-Si:H thin film has almost the same value of a-Si:H thin film (1.75eV), indicating that the crystallity of hydrogenated amorphous silicon thin film can mainly not affected to their optical properties. However, the experimental results have shown that$ E_{g}$ of the a-SiC:H thin films changed little on the annealing temperature while $E_{g}$ increased with the RF power. The Raman spectrum of the a-SiC:H thin films annealed at high temperatures showed that graphitization of carbon clusters and microcrystalline silicon occurs.

• Journal of the Korean institute of surface engineering
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• v.36 no.2
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• pp.109-115
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• 2003

Quaternary Ti-Al-Si-N films were deposited on WC-Co substrates by a hybrid deposition system of arc ion plating (AIP) method for Ti-Al source and DC magnetron sputtering technique for Si incorporation. The synthesized Ti-Al-Si-N films were revealed to be composites of solid-solution (Ti, Al, Si)N crystallites and amorphous Si3N4 by instrumental analyses. The Si addition in Ti-Al-N films affected the refinement and uniform distribution of crystallites by percolation phenomenon of amorphous silicon nitride, similarly to Si effect in TiN film. As the Si content increased up to about 9 at.%, the hardness of Ti-Al-N film steeply increased from 30 GPa to about 50 GPa. The highest microhardness value (~50 GPa) was obtained from the Ti-Al-Si-N film haying the Si content of 9 at.%, the microstructure of which was characterized by a nanocomposite of nc-(Ti,Al,Si) N/a$-Si_3$$N_4$.

• Journal of Magnetics
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• v.4 no.1
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• pp.1-4
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• 1999

The microstructure and magnetic properties of$ Fe_{87}Zr_7Si_4B_2$ nanocrystalline alloys were studied by magnetization measurements and M ssbauer spectrometry over a wide temperature range. Three well resolved spectral components have been found and attributed to bcc-Fe grains (with almost pure iron structure), residual amorphous matrix enriched with solute elements and interfaces formed at the grain-matrix boundaries. It has been shown that, contrary to the expectation, during crystallization the atomic segregation occurs leading to the formation of primary bcc-Fe grains and the partition of Si atoms into the residual amorphous matrix.