• The Plant Pathology Journal
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• 제32권3호
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• pp.260-265
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• 2016

We observed the changes in aggressiveness and fecundity of the anthracnose pathogen Colletotrichum acutatum on hot pepper, under the ambient and the twice-ambient treatments. Artificial infection was repeated over 100 cycles for ambient ($25^{\circ}C/400ppm$ $CO_2$) and twice-ambient ($30^{\circ}C/700ppm$ $CO_2$) growth chamber conditions, over 3 years. During repeated infection cycles (ICs) on green-pepper fruits, the aggressiveness (incidence [% of diseased fruits among 20 inoculated fruits] and severity [lesion length in mm] of infection) and fecundity (the average number of spores per five lesions) of the pathogen were measured in each cycle and compared between the ambient and twice-ambient treatments, and also between the early (ICs 31-50) and late (ICs 81-100) generations. In summary, the pathogen's aggressiveness and fecundity were significantly lower in the late generation. It is likely that aggressiveness and fecundity of C. acutatum may be reduced as global $CO_2$ and temperatures increase.

• 생물환경조절학회지
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• 제15권4호
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• pp.364-368
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• 2006

This experiment was carried out to figure out the $CO_2$ biomass and the growth response of Chinese cabbage and radish grown under the condition of high temperature and high $CO_2$ concentration to provide the information for the coming climatic change. Chinese cabbage and radish were cultivated in spring and autumn seasons under 4 treatments, 'ambient temp.+ambient $CO_2$ conc.', 'ambient temp.+elevated $CO_2$ conc.', 'elevated temp.+ ambient $CO_2$ conc.', and 'elevated temp. +elevated $CO_2$ conc.'. The 'elevated temp,' plot was maintained at 5 higher than 'ambient temp. (outside temperature)'and the 'elevated $CO_2$ cone.' plot was done in 650 ppm $CO_2$. The growth of spring-sown Chinese cabbage was worse than autumn-sown one, and was affected more by high temperature than high $CO_2$. concentration. The $CO_2$ biomass of Chinese cabbage was lower as 25.1-39.1 g/plant in spring-sown one than 54.8-63.4 g/plant of autumn-sown one. Daily $CO_2$2 fixation ability was not significantly different between spring- and autumn-sown Chinese cabbage as 1.9-2.9, 2.7-3.1 kg/10a/day, respectively. The $CO_2$ biomass of radish were 87.4-104.6 /plant in spring-sown one and 51.3$\sim$76.4 g/plant in autumn-sown one. Daily $CO_2$ fixation ability of radish were 6.2-10.1 kg/10a/day in spring-sown one and 4.6-6.9 kg/10a/day in autumn-sown one.

• 한국환경과학회지
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• 제26권5호
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• pp.601-608
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• 2017

The effects of elevated atmospheric $CO_2$ on growth and photosynthesis of soybean (Glycine max Merr.) were investigated to predict its productivity under elevated $CO_2$ levels in the future. Soybean grown for 6 weeks showed significant increase in vegetative growth, based on plant height, leaf characteristics (area, length, and width), and the SPAD-502 chlorophyll meter value (SPAD value) under elevated $CO_2$ conditions ($800{\mu}mol/mol$) compared to ambient $CO_2$ conditions ($400{\mu}mol/mol$). Under elevated $CO_2$ conditions, the photosynthetic rate (A) increased although photosystem II (PS II) photochemical activity ($F_v/F_m$) decreased. The maximum photosynthetic rate ($A_{max}$) was higher under elevated $CO_2$ conditions than under ambient $CO_2$ conditions, whereas the maximum electron transport rate ($J_{max}$) was lower under elevated $CO_2$ conditions compared to ambient $CO_2$ conditions. The optimal temperature for photosynthesis shifted significantly by approximately $3^{\circ}C$ under the elevated $CO_2$ conditions. With the increase in temperature, the photosynthetic rate increased below the optimal temperature (approximately $30^{\circ}C$) and decreased above the optimal temperature, whereas the dark respiration rate ($R_d$) increased continuously regardless of the optimal temperature. The difference in photosynthetic rate between ambient and elevated $CO_2$ conditions was greatest near the optimal temperature. These results indicate that future increases in $CO_2$ will increase productivity by increasing the photosynthetic rate, although it may cause damage to the PS II reaction center as suggested by decreases in $F_v/F_m$, in soybean.

• 한국작물학회지
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• 제51권4호
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• pp.303-309
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• 2006

The study examined the effects of $CO_2$ enrichment on growth of soybean (Glycine max). Two soybean varieties were used, Taekwang and Cheongja. The plants were grown in growth chambers with a 12-h photoperiod and a day/night temperature of $28/21^{\circ}C$ at the seedling stage and $30/23^{\circ}C$ from the flowering stage. The plants were exposed to the two elevated $CO_2$ levels of 500 and 700 ppm and the ambient level of 350 ppm. Results of the experiment showed that at the second-node trifoliate stage of the two varieties, the elevated $CO_2$ increased plant height, leaf area and dry weight. The elevated $CO_2$ also raised the photosynthetic rate of soybean as compared to the ambient level. From the beginning bloom stage to the full maturity stage of the two varieties, the elevated $CO_2$ increased plant height, leaf area, seed weight and photosynthetic rate. The stomatal conductance and transpiration rate decreased on long days relative to short days of treatment. Through the entire stages, the elevated $CO_2$ increased the water use efficiency of soybean plants because stomatal conductance and transpiration rate decreased at the elevated $CO_2$ levels relative to the ambient level.

• Journal of the Korean Physical Society
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• 제73권9호
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• pp.1329-1333
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• 2018

We investigated the mechanism of mobility enhancement after the dehydrogenation process in polycrystalline silicon (poly-Si) thin films. The dehydrogenation process was performed by using an in-situ CVD chamber in a $N_2$ ambient or an ex-situ furnace in air ambient. We observed that the dehydrogenated poly-Si in a $N_2$ ambient had a lower oxygen concentration than the dehydrogenated poly-Si annealed in an air ambient. The in-situ dehydrogenation increased the (111) preferred orientation of poly-Si and reduced the oxygen concentration in poly-Si thin films, leading to a reduction of the trap density near the valence band. This phenomenon gave rise to an increase of the field-effect mobility of the poly-Si thin film transistor.

• 한국농림기상학회지
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• 제15권4호
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• pp.245-263
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• 2013

본 시험은 기후변화의 영향과 관련하여 기온 및 $CO_2$ 농도 상승이 '후지'/M.9 사과나무의 광합성 및 과실품질에 미치는 영향을 알아보고자 지난 4년(2009-2012)동안 시험이 이루어졌다. 처리구들은 'Ambient' (대기온도+대기 $CO_2$ 농도), 'High $CO_2$'(대기온도+상승 $CO_2$ 농도), 'High Temp'. (상승온도+대기 $CO_2$ 농도), 'High $CO_2$+High Temp'. (상승온도+상승 $CO_2$ 농도)이었다. 상승온도 처리구들은 대기온도보다 $4^{\circ}C$ 상승시켰고, 상승 $CO_2$ 농도 처리구들은 $700{\mu}mol{\cdot}mol^{-1}$로 유지하였다. 4년 동안 매년 처리기간은 4월말부터 11월초까지였다. $CO_2$ 상승은 기공전도도와 잎의 엽록체함량(SPAD 계량기 값)을 감소시켰으나, 광합성속도, 세포 내 $CO_2$ 농도(Ci) 및 잎의 전분함량은 증가시켰다. 수체생장에 있어, 기온 상승은 나무당 총 신초수와 총 신초생장량을 증가시켰으나, $CO_2$ 상승은 평균 신초장을 감소시켰다. 과실품질에 있어, $CO_2$ 상승은 착색, 가용성 고형물 함량, 및 에틸렌 발생량을 증진시켰다. 결론적으로, $CO_2$ 농도가 상승되면 생육초기에 사과나무의 광합성속도가 증가되었으나 생육후기에는 $CO_2$ 상승에 따른 광합성속도 증진 효과가 감소되었다. 반면에 기온 상승은 생육초기 광합성속도를 감소시켰으나 생육후기에 광합성속도를 증진시키는 경향이 있었다. $CO_2$와 기온의 동시 상승은 각 요인에 의한 광합성 감소 정도가 줄어드는 경향이 있었다.

• 대한기계학회논문집B
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• 제25권11호
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• pp.1509-1517
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• 2001

An experimental and numerical analysis were conducted to investigate the transient temperature distribution and flame propagation characteristics over an inline polystyrene spheres under microgravity. From the experimental, a self-ignition temperature of polystyrene bead was 872 K under gravity. Flame spread rates were 4.7-5.1 mm/s with ambient gas N$_2$and 2.3-2.5 mm/s with ambient gas CO$_2$, respectively. Flame radius diameters were 17 mm with ambient gas N$_2$and 9.6 mm with ambient gas CO$_2$, respectively. These results suggest that the flame propagation speed could be affected in the Diesel engine and the boiler combustor by EGR. In terms of the flame spread rate and the transient temperature profile, numerical results have the qualitative agreement with the experiment.

• The Korean Journal of Ecology
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• 제23권6호
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• pp.423-429
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• 2000

To understand the effects of elevated $CO_2$ concentration and temperature on seedling emergence of seven herbaceous species, the seedling emergence was monitored between November 1997 and May 1998 using a temperature gradient chamber and a $CO_2$-temperature gradient chamber. Experiment was conducted under current ambient condition (Control plot), 2$^{\circ}C$-warmed condition with ambient $CO_2$ (T2 Plot), 4$^{\circ}C$-warmed condition with ambient $CO_2$ (T4 plot). and 4$^{\circ}C$-warmed condition with 1.8 fold of ambient $CO_2$ (CT4 plot). Species tested in this study were Digitaria adscendens, Echinochloa crus-galli, Panicum bisulcatum, Setaria viridis. Oenothera biennis, Andropogon virginicus, and Imperata cylindrica. Each species often dominates in the herbaceous stage of secondary succession in Japan. The mean seedling emergence times for all species were significantly increased to 23.6 and 32.2 d in the T2 and T4 plot compared to the Control plot, respectively. The most sensitive and insensitive species in seedling emergence time in T2 plot were O. biennis and D. adscendens, respectivel.y, and those in the T4 and CT4 plot were I. cylindrica and D. adscendens, E. crus-galli and A. virginicus, respectively. All experimental species showed no significant difference in the seedling emergence rate between treatments except for O. biennis and I. cylindrica. O. biennis showed a great decrease in the seedling emergence rate from 83.3% in the Control plot to 38.0%, 14.7%, and 29.3% in the T2, T4, and CT4 plot, respectively. Elevated $CO_2$ had very little effect on the seedling emergence. From these observations, it is expected that increased temperature would greatly advance the vegetative recovery time after disturbance through the advancement of seedling emergence time.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.764-768
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• 2002

Characteristics of ohmic Co/Si/Co contacts to n-type 4H-SiC are investigated systematically. The ohmic contacts were formed by annealing Co/Si/Co sputtered sequentially. The annealings were performed at $800^{\circ}C$ using RTP in vacuum ambient and $Ar:H_2$(9:1) ambient, respectively. The specific contact resistivity$(\rho_c)$, sheet resistance$(R_s)$, contact resistance$(R_c)$, transfer length$(L_T)$ were calculated from resistance$(R_T)$ versus contact spacing(d) measurements obtained from TLM(transmission line method) structure. While the resulting measurement values of sample annealed at vacuum ambient were $\rho_c=1.0{\tiimes}10^{-5}{\Omega}cm^2$, $R_c=20{\Omega}$ and $L_T$ = 6.0 those of sample annealed at $Ar:H_2$(9:1) ambient were $\rho_c=4.0{\tiimes}10^{-6}{\Omega}cm^2$, $R_c=4.0{\Omega}$ and $L_T$ = 2.0. The physical properties of contacts were examined using XRD and AES. The results showed that cobalt silicide was formed on SiC and Co was migrated into SiC.

• 센서학회지
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• 제25권2호
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• pp.124-130
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• 2016

NDIR $CO_2$ gas sensor was built with ASIC implemented thermopile sensor which included temperature sensor and unique elliptical waveguide structures in this paper. The temperature dependency of dual infrared sensor module ($CO_2$ and reference IR sensors) has been characterized and its output voltage characteristics according to the temperature and gas concentration were proposed for the first time. NDIR $CO_2$ gas and reference IR sensors showed linear output voltages according to the variation of ambient temperatures from 243 K to 333 K and their slopes were 14.2 mV/K and 8.8 mV/K, respectively. The output voltages of temperature sensor also presented a linear dependency according to the ambient temperature and could be described with V(T)=-3.191+0.0148T(V). The output voltage ratio between $CO_2$ and reference IR sensors revealed irrelevant to the changes of ambient temperatures and gave a constant value around 1.6255 with standard deviation 0.008 at 0 ppm. The output voltage of $CO_2$ gas sensor at zero ppm $CO_2$ gas consisted of two components; one is caused by the HPB (half pass-band) of IR filter and the other is attributed to the part of $CO_2$ absorption wavelength. The characteristics of output voltages of $CO_2$ gas sensor could be accurately modeled with three parameters which are dependent upon the ambient temperatures and represented small average error less than 1.5% with 5% standard deviation.