• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.37-38
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• 2000

The ZnS:Tb thin-film electroluminescent devices were grown by atomic layer deposition with utilizing single-layer aluminum oxide and/or multilayered tantalum aluminum oxide, $Ta_xAl_yO$, as upper and lower insulating layers. These devices were investigated in terms of the luminescent and electrical characteristics. From this analysis, the devices using the $Ta_xAl_yO$ instead of $Al_2O_3$ were observed to have a lower threshold voltage for emission due to the higher relative dielectric constant of $Ta_xAl_yO$ insulators than that of the $Al_2O_3$ device. And there was a large amount of dynamic space charge generation in the phosphor of the device with the $Ta_xAl_yO$ insulators seemingly due to electron multiplication such as trap ionization.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2008.05a
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• pp.482-484
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• 2008

Anodic aluminum oxide (AAO) which prepared with two-step anodizing method (with dissimilar solutions) was used as a template to fabricate highly ordered, free standing metal nano-rods. AAO nano-template technique can realize self-organized hexagonal pore structure with nanometer dimension size, it's easy to control pore diameter, length and density by varying anodizing conditions. Ni and Ni/Fe/Cu multi-metal layer nanorods were electrochemically deposited into AAO nano-template by AC voltage in simple sulfate solutions.. The properties of samples are tested by X-ray diffraction (XRD), field emission microscopy (FE-SEM).

• The Transactions of the Korean Institute of Electrical Engineers
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• v.43 no.3
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• pp.528-531
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• 1994

Digitalization in electronic system is required the capacitor which have a large capacitance with small size, low impedance at high frequency, and high reliability. The fabrication and its properties of aluminum solid electrolytic capacitor are investigated. Employing conduction polymer film such as, polypyrrole as solid electroylte, solid type aluminum electrolytic capacitors were made. The surface of insulationg oxide is covered with conducting polymer layer prepared by chemical oxidative polymerization. Thereafter this conducting layer is covered with conducting polymer prepared by electrochemical polymerization. The dielectric properties of these capacitors were also measured and discussed. Regarding on frequency characteristics of the trial made capacitor, impedance and ESR at high frequency is lower than those of the stacked type film capacitor. It is alo confirmed that temperature coefficient of capacitance and dissipation factor of the capacitor are lower than those of film capacitor and liquid type aluminum electrolytic capacitor.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2008.11a
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• pp.68-68
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• 2008

There are several methods for oxide coating on metals, such as aluminum or carbon nanotubes(CNTs). Usually CVD method is introduced for various oxide coating on CNTs. Another method is electrochemical method which use potential-pH diagram for oxide coating on metal or CNTs. In this experiment, electrochemical coating parameter for oxide coating on aluminum template modified by acids and hydrogen peroxide ($H_2O_2$) were examined. SEM micrographs displayed clearly $Ni(OH)_2$ coating on template. For confirmation of electrochemical method application to EDLC electrode material fabrication, EDS spectrum was analyzed.

• Journal of Electrical Engineering and Technology
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• v.9 no.2
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• pp.609-614
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• 2014

We fabricated amorphous zinc tin oxide (ZTO) transparent thin-film transistors (TTFTs). The effects of Al electrode on the mobility and threshold voltage of the ZTO TTFTs were investigated. It was found that the aluminum (Al)-ZTO contact decreased the mobility and increased the threshold voltage. Traps, originating from $AlO_x$, were assumed to be the cause of degradation. An indium tin oxide film was inserted between Al and ZTO as a buffer layer, forming an ohmic contact, which was revealed to improve the performance of ZTO TTFTs.

• Journal of Electrical Engineering and Technology
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• v.6 no.5
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• pp.688-692
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• 2011

Carbon nanotubes (CNTs) are vertically grown inside high-aspect-ratio vertical pores of anodized aluminum oxide. A CNT catalyst layer is introduced by atomic layer deposition to the bottom of the pores, after which the CNTs are successfully grown from the layer using chemical vapor deposition. The CNTs formed a complete vertical conductive path. The conductivity of the CNT-vertical path is also measured and discussed. The present atomic layer deposition-incorporated catalyst deposition is predicted to enable the integration of CNTs with various challenging configurations, including high-aspect-ratio vertical channels or vertical interconnects.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.318-318
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• 2012

A graphene layer is most important materials in resent year to enhance the electrical properties of semiconductor device due to high mobility, flexibility, strong mechanical resistance and transparency[1,2]. The resistance switching memory with the graphene layer have been reported for next generation nonvolatile memory device[3,4]. Also, the graphene layer is able to improve the electrical properties of memory device because of the high mobility and current density. In this study, the resistance switching memory device with metal-oxide nano-particles embedded in polyimide layer on the graphene mono-layer were fabricated. At first, the graphene layer was deposited $SiO_2$/Si substrate by using chemical vapor deposition. Then, a biphenyl-tetracarboxylic dianhydride-phenylene diamine poly-amic-acid was spin coated on the deposited metal layer on the graphene mono-layer. Then the samples were cured at $400^{\circ}C$ for 1 hour in $N_2$ atmosphere after drying at $135^{\circ}C$ for 30 min through rapid thermal annealing. The deposition of aluminum layer with thickness of 200 nm was done by a thermal evaporator. The electrical properties of device were measured at room temperature using an HP4156a precision semiconductor parameter analyzer and an Agilent 81101A pulse generator. We will discuss the switching mechanism of memory device with metal-oxide nano-particles on the graphene mono-layer.

• Bulletin of the Korean Chemical Society
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• v.33 no.10
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• pp.3258-3264
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• 2012

Aluminum oxide ($Al_2O_3$) nanofibers were treated thermally under an ammonia ($NH_3$) gas stream balanced by nitrogen to form a thin aluminum nitride (AlN) layer on the nanofibers, resulting in the enhancement of thermal conductivity of $Al_2O_3$/epoxy nanocomposites. The micro-structural and morphological properties of the $NH_3$-assisted thermally-treated $Al_2O_3$ nanofibers were characterized by X-ray diffraction (XRD) and atomic force microscopy (AEM), respectively. The surface characteristics and pore structures were observed by X-ray photoelectron spectroscopy (XPS), Zeta-potential and $N_2$/77 K isothermal adsorptions. From the results, the formation of AlN on $Al_2O_3$ nanofibers was confirmed by XRD and XPS. The thermal conductivity (TC) of the modified $Al_2O_3$ nanofibers/epoxy composites increased with increasing treated temperatures. On the other hand, the severely treated $Al_2O_3$/epoxy composites showed a decrease in TC, resulting from a decrease in the probability of heat-transfer networks between the filler and matrix in this system due to the aggregation of nanofiber fillers.

• Corrosion Science and Technology
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• v.18 no.6
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• pp.228-231
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• 2019

Aluminum and its alloys have been widely used in various fields because of low weight, high strength, good conductivity, and low price. It is well known that aluminum alloys that cause natural oxide film can inhibit corrosion in wet, salty environments. However, these oxides are so thin that corrosion occurs in a variety of environments. To prevent this problem, an electrochemical anodizing technique was applied to the aluminum alloy surface to form a thick layer of oxide and a unique oxide shape, such as a hierarchical pore structure simultaneously combining large and small pores. The shape of the structures was implemented using stepwise anodization voltages such as 40 V for mild anodizing and 80 V for hard anodizing, respectively. To maximize water repellency, it is crucial to the role of surface structures shape. And a hydrophobic thin film was coated by 1H, 1H, 2H, 2H-Perfluorodecyltrichlorosilane (FDTS) to minimize surface energy of the structure surface. Thus, such nanoengineered superhydrophobic surface exhibited a high water contact angle and excellent corrosion resistance such as low corrosion current density and inhibition efficiency.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.4
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• pp.286-290
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• 2020

The formation of inorganic thin films in low-temperature solution processes is necessary for a wide range of commercial applications of organic electronic devices. Aluminum oxide thin films can be utilized as barrier films that prevent the deterioration of an electronic device due to moisture and oxygen in the air. In addition, they can be used as the gate insulating layers of a thin film transistor. In this study, aluminum oxide thin film were formed using two methods simultaneously, a thermal process and the DUV process, and the properties of the thin films were compared. The result of converting aluminum nitrate hydrate to aluminum oxide through a hybrid process using a thermal treatment and DUV was confirmed by XPS measurements. A film-based a-IGZO TFT was fabricated using the formed inorganic thin film as a gate insulating film to confirm its properties.