• 한국자기학회지
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• 제20권5호
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• pp.191-195
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• 2010

두 차례에 걸친 양극 산화 과정 중 1차 양극 산화 시 성장한 초기 산화 피막의 제거와 2차 양극 산화 시간에 따른 다공성 알루미나 막의 성장에 대해 살펴보았다. 다공성 알루미나 막의 제작은 인산을 전해 용액으로 사용하여 두 차례의 양극산화 과정을 통해 이루어졌으며 초기 산화 피막의 제거가 2차 양극 산화 후 나타나는 알루미나 막 표면상의 기공구조형성에 미치는 영향과 함께 2차 양극 산화 시간에 따라 성장하는 알루미나 막의 두께 변화를 관찰하였다. 그 결과 1차 양극 산화 후 인산과 크롬산을 이용한 식각 과정에서 이루어진 산화 피막의 제거 정도에 따라 형성되는 다공 구조의 균일도가 향상됨을 관찰 할 수 있었다. 또한 2차 양극 산화 시간에 따라 산화 막의 두께가 선형적으로 증가함을 알 수 있었다. 본 연구를 통해 인산용액을 전해액으로 사용하였을 경우 150 V의 양극 산화 전압 하에서 다공성 알루미나 막의 성장률은 22.5 nm/min임을 확인 할 수 있었다.

• 한국결정성장학회지
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• 제6권3호
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• pp.415-423
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• 1996

황산니켈염 수용액에서 가압수소환원법을 이용하여 알루미나 분말상에 니켈 코팅층을 형성하기 위하여 실험조건(수소분압, 반응온도, $PdCl_{2}$ 첨가량, 알루미나의 종류 및 입도)을 변화시키면서 니켈이온의 환원속도 및 석출상태를 조사하였다. 환원온도 $165^{\circ}C$, 수소분압 300 psi, 코팅촉매제 $PdCl_{2}\;2\;mg/\ell$를 첨가한 조건에서 균질한 니켈코팅층을 얻을 수 있었다.

• 한국결정성장학회지
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• 제5권2호
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• pp.122-128
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• 1995

알루미나 입자표면에 실리카 흡착층을 갖는 복합분말로 제조된 시편을 반응소결시켜 물라이트화 과정을 고찰하였다. 물라이트화 반응은 알루미나와 cristobalite의 계면에서 낮은 알루미나 함량을 갖는 비정질 aluminosilicated 상이 중간층을 형성하면서 시작되고 이 층을 통한 알루미나의 확산에 의하여 물라이트가 성장되었다. 물라이트는 알루미나의 입자의 표면을 따라 성장하였으며 확산에 의해 성장속도가 제어되었다

• 한국원자력학회:학술대회논문집
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• 한국원자력학회 1997년도 춘계학술발표회논문집(2)
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• pp.159-164
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• 1997

Pyrolytic carbon layer was coated on A1203 balls by fluidized bed type chemical vapour deposition unit to develop the coating technology for the preparation of coated nuclear fuel. The deposition was carried out at the temperature ranges between 110$0^{\circ}C$ and 130$0^{\circ}C$ with various gas contents and flow rates. Source and carrier gas were propane and argon, respectively. X-ray analysis shows that the deposition layer was typical carbon spectra. The growth rate of carbon layer depended on the amount of source gas and the deposition temperature. For the alumina balls with 2mm in diameter, the deposition rate was 11${\mu}{\textrm}{m}$/hr in the flow gases containing 30% source gas at 130$0^{\circ}C$ with a total flow rate of 2.0$\ell$/min. Microstructural observation of the deposits with scanning electron microscope revealed that the deposits had relatively dense and isotropic structure. Chemical analysis by energy dispersive spectroscopy showed that the layer was pure carbon.

• 한국세라믹학회지
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• 제34권5호
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• pp.483-490
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• 1997

Al2O3/metal composites were fabricated by oxidation and reaction of molten Al-alloy into two types of commercial Al2O3-SiO2 fibrous insulation board. The growth rate, composition and microstructure of these materials were described. An AlZnMg(7075) alloy was selected as a parent alloy. Mixed polycrystalline fiber and glass phase fiber were used as a filler. The growth surface of an alloy was covered with and without SiO2. SiO2 powder was employed as a surface dopant to aid initial oxidation of Al-alloy. Al-alloy, SiO2, fiber block and growth inhibitor CaSiO3 were packed sequentially in a alumina crucible and oxidized in air at temperature range 90$0^{\circ}C$ to 120$0^{\circ}C$. The growth rate of composite layer was calculated by measuring the mass increasement(g) per unit surface($\textrm{cm}^2$). XRD and optical microscope were used to investigate the composition and phase of composites. The composite grown at 120$0^{\circ}C$ and with SiO2 dopant showed rapid growth rate. The growth behavior differed a little depending on the types of fiber used. The composites consist of $\alpha$-Al2O3, Al, Si and pore. The composite grown at 100$0^{\circ}C$ exhibited better microstructure compared to that grown at 120$0^{\circ}C$.

• 한국재료학회지
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• 제9권6호
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• pp.609-614
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• 1999

The effect of the amount of $SiO_2$dopant on the behavior of $AlO_2$$O_3$-composite formation by melt oxdation of Al-alloy was examined in this paper. The $SiO_2$powder was spread on the top surface of the Al-1Mg-3-Si-5Zn-1Cu alloy in th alumina crucible. The selected amount of each powder was 0.03, 0.10, 0.16g/$\textrm{cm}^2$. The oxidation behavior was determined by observing the weight gain after the heat treatment for 10 hours at 1373K. The macroscopic structure of formed oxide layer was examined by an optical microscope. The top surface and the cross-section of the grown oxide layer were investigated by SEM and analysed by EDX. The $SiO_2$ powder was determined to enhance oxidation by thermit reaction with Al which reduced the growth incubation period of the oxidation layer. As the amount of the $SiO_2$dopant increased, the growth rate decreased due to the precipitated Si which blocked the Al-alloy channel in the composite materials. However, more uniform layer was obtained due to the occurrance of the enhanced oxidation reaction in the whole alloy surface compared to the case of addition of less amount of dopant.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.75.2-75.2
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• 2013

Atomic layer deposition (ALD), utilizing self-limiting surface reactions, could offer promising perspectives for future efficient energy conversion devices. The capabilities of ALD for surface/interface modification and construction of novel architectures with sub-nanometer precision and exceptional conformality over high aspect ratio make it more valuable than any other deposition methods in nanoscale science and technology. In the context, a variety of researches on fabrication of active materials for energy conversion applications by ALD are emerging. Among those materials, one-dimensional nanotubular titanium dioxide, providing not only high specific surface area but also efficient carrier transport pathway, is a class of the most intensively explored materials for energy conversion systems, such as photovoltaic cells and photo/electrochemical devices. The monodisperse, stoichiometric, anatase, TiO2 nanotubes with smooth surface morphology and controlled wall thickness were fabricated via low-temperature template-directed ALD followed by subsequent annealing. The ALD-grown, anatase, TiO2 nanotubes in alumina template show unusual crystal growth behavior which allows to form remarkably large grains along axial direction over certain wall thickness. We also fabricated dye-sensitized solar cells (DSCs) introducing our anatase TiO2 nanotubes as photoanodes, and studied the effect of blocking layer, TiO2 thin films formed by ALD, on overall device efficiency. The photon convertsion efficiency ~7% were measured for our TiO2 nanotubebased DSCs with blocking layers, which is ~1% higher than ones without blocking layer. We also performed open circuit voltage decay measurement to estimate recombination rate in our cells, which is 3 times longer than conventional nanoparticulate photoanodes. The high efficiency of our ALD-grown, anatase, TiO2 nanotube-based DSCs may be attributed to both enhanced charge transport property of our TiO2 nanotubes photoanode and the suppression of recombination at the interface between transparent conducting electrode and iodine electrolytes by blocking layer.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.74-74
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• 2010

One-dimensional nanosturctures such as nanowires and nanotube have been mainly proposed as important components of nano-electronic devices and are expected to play an integral part in design and construction of these devices. Silicon carbide(SiC) is one of a promising wide bandgap semiconductor that exhibits extraordinary properties, such as higher thermal conductivity, mechanical and chemical stability than silicon. Therefore, the synthesis of SiC-based nanowires(NWs) open a possibility for developing a potential application in nano-electronic devices which have to work under harsh environment. In this study, one-dimensional nanowires(NWs) of cubic phase silicon carbide($\beta$-SiC) were efficiently produced by thermal chemical vapor deposition(T-CVD) synthesis of mixtures containing Si powders and hydrocarbon in a alumina boat about $T\;=\;1400^{\circ}C$ SEM images are shown that the temperature below $1300^{\circ}C$ is not enough to synthesis the SiC NWs due to insufficient thermal energy for melting of Si Powder and decomposition of methane gas. However, the SiC NWs are produced over $1300^{\circ}C$ and the most efficient temperature for growth of SiC NWs is about $1400^{\circ}C$ with an average diameter range between 50 ~ 150 nm. Raman spectra revealed the crystal form of the synthesized SiC NWs is a cubic phase. Two distinct peaks at 795 and $970\;cm^{-1}$ over $1400^{\circ}C$ represent the TO and LO mode of the bulk $\beta$-SiC, respectively. In XRD spectra, this result was also verified with the strongest (111) peaks at $2{\theta}=35.7^{\circ}$, which is very close to (111) plane peak position of 3C-SiC over $1400 ^{\circ}C$ TEM images are represented to two typical $\beta$-SiC NWs structures. One is shown the defect-free $\beta$-SiC nanowire with a (111) interplane distance with 0.25 nm, and the other is the stacking-faulted $\beta$-SiC nanowire. Two SiC nanowires are covered with $SiO_2$ layer with a thickness of less 2 nm. Moreover, by changing the flow rate of methane gas, the 300 sccm is the optimal condition for synthesis of a large amount of $\beta$-SiC NWs.

• 한국진공학회지
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• 제19권4호
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• pp.307-313
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• 2010

본 연구에서는 열 화학기상증착법(thermal chemical vapor deposition)을 이용하여 분말 형태의 규소(Si)와 염화니켈 수화물 $(NiCl_2{\cdot}6H_2O)$을 혼합한 후 탄소공급원인 $CH_4$ 가스를 주입하여 탄화규소 나노선(SiC nanowire)을 합성하였다. 합성 온도와 $CH_4$ 가스 유량 변화에 따른 탄화규소 나노선의 구조적 특성을 분석한 결과, 합성온도가 $1,400^{\circ}C$, $CH_4$ 가스의 유량이 300 sccm인 경우가 탄화규소 나노선의 합성에 최적화된 조건임을 라만 분광법(Raman spectroscopy)과 X-선 회절(X-ray diffraction), 주사전자현미경(scanning electron microscopy), 그리고 투과전자현미경(transmission electron microscopy) 분석을 통해 확인하였다. 합성된 탄화규소 나노선의 직경은 약 50~150 nm이며, 곧은 방향성과 높은 결정성을 가지는 입방구조(cubic structure)를 지니고 있었다.