• 제어로봇시스템학회:학술대회논문집
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• 1996.10b
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• pp.1352-1355
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• 1996

The control of diamond turning is usually achieved through a laser-interferometer feedback of slide position. If the tool post is rigid and the material removal process is relatively static, then such a non-collocated position feedback control scheme may surface. However, as the accuracy requirement gets tighter and desired surface contours become more complex, the need for a direct tool-tip sensing becomes inevitable. The physical constraints of the machining process prohibit any reasonable implementation of a tool-tip motion measurement. It is proposed that the measured force normal to the face of the workpiece can be filtered through an appropriate admittance transfer function to result in the estimated depth of cut. This can be compared to the desired depth of cut to generate the adjustment control action in addition to position feedback control. In this work, the design methodology on the admittance model-based control with a conventional controller is presented. The recursive least-squares algorithm with forgetting factor is proposed to identify the parameters and update the cutting process in real time. The normal cutting forces are measured to identify the cutting dynamics in the real diamond turning process using the precision dynamometer. Based on the parameter estimation of cutting dynamics and the admittance model-based nanodynamic control scheme, simulation results are shown.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 1996.04a
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• pp.49-52
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• 1996

The control of diamond turning is usually achieved through a laser-interferometer feedback of slide position. The limitation of this control scheme is that the feedback signal does not account for additional dynamics of the tool post and the material removal process. If the tool post is rigid and the material removal process is relatively static, then such a non-collocated position feedback control scheme may surfice. However, as the accuracy requirement gets tighter and desired surface contours become more complex, the need for a direct tool-tip sensing becomes inevitable. The physical constraints of the machining processprohibit any reasonable implementation of a tool-tip motion measurement. It is proposed that the measured force normalto the face of the workpice can be filterd through an appropriate admittance transfer function to result in the estimated depth of cut. This can be compared to the desired depth of cut to generate the adjustment cotnrol action in addition to position feedback control. In this work, the design methodology on the admittance model-based control with a conventional controller is presented. Based on the empirical data of the cutting dynamics, simulation results are shown.

• Membrane Journal
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• v.27 no.5
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• pp.434-440
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• 2017

Electrical impedance spectroscopy is used to detect membrane fouling in-situ in reverse electrodialysis. The impedance data for the AMX membrane being fouled in the reverse electrodialysis are plotted and analyzed by Nyquist and admittance method. The meaningful graphical analyses for the fouling phenomena could be done by both Nyquist and admittance method. In addition, the unstable initial fouling stage was identified by the admittance data with high standard deviation, and the structural change of the fouling layer formed at the surface of anion-exchange membranes with the operation time of reverse electrodialysis was also detected.

• Applied Science and Convergence Technology
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• v.24 no.6
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• pp.224-227
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• 2015

Ferroelectric $Pb_2(Sc,Nb)O_6$ were prepared under two different sintering conditions using the oxide mixing method and the electrical properties were measured. The sintering conditions were $1350^{\circ}C$ for 25 minutes and $1400^{\circ}C$ for 20 minutes. EDX spectroscopy and XRD were used to determine the crystalline characteristic of the $Pb_2(Sc,Nb)O_6$ compositions Pyrochlore phase showed about 2% in all $Pb_2(Sc,Nb)O_6$ specimens. It expands the growth of crystals in samples sintered at $1400^{\circ}C$ than $1350^{\circ}C$, but all samples were the optimal crystallization. The temperature and frequency dependence of the complex dielectric constant and admittance were measured to analyze the electrical properties. The high dielectric constant of the specimens reflects the good stoichiometry and crystallization. The maximum value of the dielectric constant in the two specimens treated with sintering at $1350^{\circ}C$ and $1400^{\circ}C$ were more than 27,000, and the dielectric loss at room temperature is smaller than 0.05. The maximum dielectric constant decreased with increasing frequency, the transition temperature also increased in $Pb_2(Sc,Nb)O_6$ compositions. The admittance and susceptance values reach a peak at all temperatures, and the magnitude of the peak increases with increasing measuring temperature. Strong frequency dependent of maximum admittance, susceptance, dielectric constant and dielectric loss were observed.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.11
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• pp.1223-1232
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• 2008

In this paper, an analytic method is proposed to extract the reference slot admittance required for the design of a non-resonant waveguide edge slot array. A slot and two neighboring transmission line sections of the numerous alternately inclined slots with the identical inclination angle are modelled as a uniform lossy transmission line, and thus, the total ABCD matrix is easily calculated and compared with the simulated or measured one. From this procedure, the complex characteristic impedance and the complex propagation constant of the lossy transmission line are calculated and the normalized slot admittance is analytically obtained. In order to validate the proposed method, the admittance value of a reference slotted waveguide fabricated for designing the X-band edge slot array is extracted and it is compared with the one obtained by the other conventional method.

• Journal of Biomedical Engineering Research
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• v.28 no.1
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• pp.84-94
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• 2007

In order to collect information on local distribution of conductivity and permittivity underneath a scan probe, we developed a multi-frequency trans-admittance scanner (TAS). Applying a sinusoidal voltage with variable frequency on a chosen distal part of a human body, we measure exit currents from 320 grounded electrodes placed on a chosen surface of the subject. The electrodes are packaged inside a small and light scan probe. The system includes one voltage source and 17 digital ammeters. Front-end of each ammeter is a current-to-voltage converter with virtual grounding of a chosen electrode. The rest of the ammeter is a voltmeter performing digital phase-sensitive demodulation. Using resistor loads, we calibrate the system including the scan probe to compensate frequency-dependent variability of current measurements and also inter-channel variability among multiple. We found that SNR of each ammeter is about 85dB and the minimal measurable current is 5nA. Using saline phantoms with objects made from TX-151, we verified the performance of the lesion estimation algorithm. The error rate of the depth estimation was about 19.7%. For the size estimate, the error rate was about 15.3%. The results suggest improvement in lesion estimation algorithm based on multi-frequency trans-admittance data.

• Journal of the Korean Ceramic Society
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• v.32 no.3
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• pp.359-365
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• 1995

The grain boundary effect on the ionic conductivity was investigated using a.c. admittance analysis in (Bi2O3)0.715(CaO)0.285 oxygen-ion conducting solid electrolyte. As a separated arc representing grain boundary polarization was not observed in the admittance plane, bulk conductivity was measrued for samples with various grain sizes in the temperature range from 48$0^{\circ}C$ to 72$0^{\circ}C$ and the conductivity distribution between grain interior and grain boundary was determined by the reported analytical methods. In the above temperature range, grain boundary worked as a high conductive path instead of blocking layer and ionic conduction through grain boundary was significant. The activation energy for conduction through grain and grain boundary was 78 and 106 kJ/mol, respectively.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.15 no.11
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• pp.1116-1122
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• 2004

The problem of electromagnetic coupling through a slit in a flanged parallel-plate waveguide is considered. The equivalent slit admittance associated with reactive powers near the coupling slit inside and outside the waveguide has been obtained. The maximum coupling mechanism for the case of narrow slit has been quantitatively discussed. The effects of various geometrical parameters such as guide height, slit width, and slit of offset on the radiation characteristics of the geometry have been investigated.

• Applied Science and Convergence Technology
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• v.24 no.3
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• pp.47-52
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• 2015

The correlation between admittance and dielectric spectroscopy of dielectric relaxation in lead scandium noibate, have been investigated. Lead scandium niobate, with composition $PbSc_{0.5}Nb_{0.5}O_3$, was prepared by conventional solid state synthesis. Conductance Y'(G), susceptance Y"(B) and capacitance C of lead scandium niobate as a function of frequency and temperature were measured. From the temperature-dependence of RLC circuit, insight into physical significance of the dielectric properties of lead scandium niobate is obtained. The relative strong frequency dependent of dielectric properties in lead scandium niobate is observed, and the phase transition occurred at a broad temperature region. Also, the value of critical exponent ${\gamma}$=1.6 showed on heating process. The long relaxation times part enlarged diffuse by conductivity effects with increasing temperature, and the ordering between $Sc^{3+}$ and $Nb^{5+}$ in PSN influences complex admittance and dielectric properties. Confirmed the typical characteristic of lead-type relaxor in the Raman spectra of lead scandium niobate and major ranges are between 400 and $900cm^{-1}$.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1014-1017
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• 2006

Admittance Spectroscopic analysis was applied to study the effect of LiF buffer layer and to model the equivalent circuit for $ITO/Alq_3/LiF/Al$ device structure. The admittance spectroscopic analysis of the devices with LiF layer shows reduction in contact resistance $(R_C)$, parallel resistance $(R_P)$ and increment in parallel capacitance $(C_P)$.