• Title/Summary/Keyword: active diode

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Unity Power Factor Control for A Single Phase AC/DC PWM Converter (단상 AC/DC PWM 변환기의 단위 역률 제어)

  • Kang, Dong-Woo;Cha, Young-Kil;Lee, Deuk-Kee;Kim, Heung-Geun
    • Proceedings of the KIEE Conference
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    • 1996.11a
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    • pp.373-377
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    • 1996
  • Recently, active power factor control for AC/DC converter has been required to replace for a conventional diode rectifier. A voltage type AC/DC converter is widely used to obtain higher regulated DC voltage than input voltage with a unity power factor and a sinusoidal line current. This paper describes several active power factor control method for AC/DC converter. The analysis of several active power factor control is given. The simulations for hysteresis control, peak current control. constant frequency control and average current mode control are represented and compared.

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Fuzzy Pre-Compensated PI Control of Active Filters

  • Singh, Bhim;Singhal, Varun
    • Journal of Power Electronics
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    • v.8 no.2
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    • pp.141-147
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    • 2008
  • This paper deals with a new and improved control technique for shunt active filters (AF) used for compensating unwanted harmonic currents injected in the mains due to nonlinear varying loads. This work is motivated by the need to find a permanent solution to the rigorous hit and trial method for evaluating system parameters in an indirect control of AF. A fuzzy pre-compensated PI (Proportional-Integral) controller is used to fuzzify the reference DC voltage of AF to the controller input so that the overshoots and undershoots in its DC link voltage are minimized and the settling time is improved. A three-phase diode rectifier with R-L (Resistive-Inductive) load is used as a non-linear load to study the effectiveness of the proposed controller of the AF. Robustness to filter parameter variations, insensitivity to controller parameter variations, and transient response has been taken as performance evaluation parameters. The results are shown through simulations in Matlab using power system block sets to demonstrate the capability of the proposed controller of the AF.

Self-Pulsation in Multisection Distributed Feedback Laser Diode with a Novel Dual Grating Structure

  • Park, Kyung-Hyun;Leem, Young-Ahn;Yee, Dae-Su;Baek, Yong-Soon;Kim, Dong-Churl;Kim, Sung-Bock;Sim, Eun-Deok
    • ETRI Journal
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    • v.25 no.3
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    • pp.149-155
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    • 2003
  • A self-pulsating multisection distributed-feedback laser diode (DFB LD) can potentially realize all-optical clock extraction. This device generally consists of three sections, two DFB sections and one waveguide section. The most important variable in this device is detuning, which is the relative spectral position between the stop bands of two DFB sections. We fabricated a novel structure in which two gratings were located one over and one under the active layers. Each grating structure was independently defined in processing so that detuning, which is the prerequisite for self-pulsation, could be easily controlled. Observing various self-pulsating phenomena in these devices under several detuning conditions, we characterized the phenomena as dispersive Q-switching, mode beating, and self-mode-locking.

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Fabrication and Characteristics of Tunable Butt-Coupled Sampled-grating Distributed Bragg Reflector (SG-DBR) Laser Diodes (파장가변 Sampled-grating Distributed Bragg Reflector (SG-DBR) 레이저 다이오드 제작)

  • 이지면;오수환;고현성;박문호
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.1
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    • pp.16-20
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    • 2004
  • We present the fabrication and performance of wavelength tunable butt coupled (BT) sampled-grating (SG) distributed bragg reflector (DBR) - planar buried heterostructure (PBH) laser diodes (LD). The fabricated LD showed the high optical output power due to the high coupling efficiency between active and passive components by the BT coupling methods. The series resistance and diode ideality factor of LD were measured to be 3.7 $\Omega$ and 1.35, respectively. The average threshold current was 25 ㎃. The output powers of BT-SG DBR-PBH-LD were obtained to be as high as 12.3 and 24.56 ㎽ at 100 and 200 ㎃, respectively. The maximum wavelength tuning range was about 31 nm and the side mode suppression ratio was about 37 dB.

Implementation of Charge-Pump Active-Matrix OLED Panel with $64\;{\times}\;64$ Pixels Using $ITO/SiO_2/ITO$ Capacitors and a-Si:H Schottky Diodes

  • Na, Se-Hwan;Seo, Jong-Wook;Kwak, Mi-Young;Shim, Jae-Hoon
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.1267-1270
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    • 2006
  • Organic light-emitting diode (OLED) display panel with $64\;{\times}\;64$ pixels utilizing the charge-pump (CP) pixel addressing method was fabricated using conventional thin-film processes. Each pixel consists of a-Si:H Schottky diode and $ITO/SiO_2/ITO$ capacitor. It is shown that CP-OLED is technically feasible for information display and a driving voltage below $4V_{pp}$ is enough for nominal operation.

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Numerical Investigation of Purcell Enhancement of the Internal Quantum Efficiency of GaN-based Green LED Structures

  • Choi, Young-Hwan;Ryu, Guen-Hwan;Ryu, Han-Youl
    • Current Optics and Photonics
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    • v.1 no.6
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    • pp.626-630
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    • 2017
  • GaN-based green light-emitting diode (LED) structures suffer from low internal quantum efficiency (IQE), known as the "green gap" problem. The IQE of LED structures is expected to be improved to some extent by exploiting the Purcell effect. In this study, the Purcell effect on the IQE of green LED structures is investigated numerically using a finite-difference time-domain simulation. The Purcell factor of flip-chip LED structures is found to be more than three times as high as that of epi-up LED structures, which is attributed to the high-reflectance mirror near the active region in the flip-chip LED structures. When the unmodified IQE is 20%, the relative enhancement of IQE can be greater than 50%, without utilizing the surface-plasmon coupling effect. Based on the simulation results, the "green gap" problem of GaN-based green LEDs is expected to be mitigated significantly by optimizing flip-chip LED structures to maximize the Purcell effect.

A Study on the Lateral Waveguiding & Beam Width Variation of DH Laser Diode (이중 헤테로 접합 레이저 다이오드의 횡방향 도파 및 빔폭 변화에 관한 연구)

  • 김은수;박한규
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.20 no.1
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    • pp.15-21
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    • 1983
  • In this paper, the theoretical analysis of lateral guiding mechanism in stripe geometry Double Heterojunction Laser Diode is performed. In the analysis, the spatial variations of gain form refractive index profile are modeled by the mathematical form of injected current density and the beam width variations dependence of active layer, stripe width & cavity length have been analyzed by perturbed mode equation.

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Boundary Current Mode Operated Bridgeless Boost Converter for Power Factor Correction (역률개선을 위해 경계전류모드로 동작하는 브리지리스 부스트 컨버터)

  • Yu Byung-Gyu;Lee Sung-Se;Han Sang-Kyu;Moon Gun-Woo
    • Proceedings of the KIPE Conference
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    • 2003.11a
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    • pp.90-94
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    • 2003
  • Recently, many nations have released standard such as IEC 1000-3-2 and IEEE 519 which impose a limit on the harmonic current drawn by equipment connected to AC line in order to prevent the distortion of an AC line. Among the wide variety of active methods for improving power factor and harmonic distortion, the boost converter is very effective because it has a continuous line current , small choke filter and high power factor. In high power application, however, the bridge diode loss in the boost converter has made the efficiency lower and the temperature of the board higher. A new approach without bridge diode to make the same characteristics of the conventional boost converter has also been developed. This paper present the comparisons between the continuous current mode(CCM) operated conventional boost converter and the boundary current mode(BCM) operated the bridgeless boost converter for high efficiency and high power factor.

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A Charge-Pump Passive-Matrix Pixel Driver for Organic Light Emitting Diodes

  • Seo, Jong-Wook;Kim, Han-Byul;Kim, Bong-Ok;Kim, Young-Kwan
    • 한국정보디스플레이학회:학술대회논문집
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    • 2002.08a
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    • pp.108-112
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    • 2002
  • A new pixel driving method for organic light-emitting diode (OLED) flat-panel display (FPD) is proposed. The new charge-pump passive-matrix pixel driver consists only of a storage capacitance and a rectifying diode, and no thin-film transistor (TFT) is needed. The new driver not only supplies a constant current to the OLED throughout the whole period of panel scanning like an active-matrix driver, but also provides a highly linear gray-scale control through a pure digital manner.

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Improved Performance of 1.55 ㎛ InGaAsP/InP Superluminescent Diodes by Tapered Stripe Structure

  • Choi Young-Kyu
    • KIEE International Transactions on Electrophysics and Applications
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    • v.5C no.1
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    • pp.39-43
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    • 2005
  • We proposed a structure for a 1.55 ㎛ strained separate confinement heterostructure (SCH) multi- quantum well (MQW) superluminescent diode (SLD), having a tapered active region. SLD was fabricated through a two-step procedure: the first step being metal organic chemical vapor deposition (MOCVD) and the second-step being liquid phase epitaxy (LPE). We used a 15 laterally tilted stripe and window region to suppress the lasing action of the SLD. The performance of the SLD showed output power of 11 mW with no lasing under 200 mA pulse driving. The full-width at half-maximum was 42 nm at 200 mA, 25℃.