• Title/Summary/Keyword: active control device

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Bluetooth Network for Mobile System Control (이동 시스템 제어를 위한 블루투스 네트워크)

  • 임준홍;곽재혁
    • Journal of Institute of Control, Robotics and Systems
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    • v.10 no.11
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    • pp.1052-1057
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    • 2004
  • Bluetooth technology is essentially a method for wireless connectivity of a diverse set of devices ranging from PDAs, mobile phone, notebook computers, to another equipments, The bluetooth system both point-to point connection and point-to multipoint connection. In point-to multipoint connection, the channel is shared among several bluetooth devices. Two or more devices sharing the same channel form a piconet. There one master device and up to seven active slave devices in a piconet. The radio operates in the unlicensed 2.45GHz ISM band. This allows users who travel world-wide to use bluetooth equipments anywhere. Since the link is based on frequency-hop spread spectrum, multiple channels can exist at the same time. The bluetooth standard ha s been suggested that bluetooth equipments can be used in the short-range, maximum 100 meters. It has been defined that the time takes to setup and establish a bluetooth connection among devices is 10 seconds. It is a long time and may be a cause to lose a chance of finding other non-fixed devices. We propose a routing protocols for scatternets which can be used to control a mobile units(MUs) in this network. The proposed routing protocol is composed of two kinds of bluetooth information, access point(AP) and MU.

Web-based Measurement of ECU Signals on Vehicle using Embedded Linux

  • Choi, Kwang-Hun;Lee, Lee;Lee, Young-Choon;Kwon, Tae-Kyu;Lee, Seong-Cheol
    • 제어로봇시스템학회:학술대회논문집
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    • 2004.08a
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    • pp.138-142
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    • 2004
  • In this paper, we present a new method for monitoring of ECU's sensor signals of vehicle. In order to measure the ECU's sensor signals, the interfaced circuit is designed to communicate ECU and the Embedded Linux is used to monitor communication result through Web the Embedded Linux system and this system is said "ECU Interface Part". In ECU Interface Part the interface circuit is designed to match voltage level between ECU and SA-1110 micro controller and interface circuit to communicate ECU according to the ISO, SAE communication protocol standard. Because Embedded Linux does not allow to access hardware directly in application level, anyone who wants to modify any low level hardware must develop device driver. To monitor ECU's sensor signals the most important thing is to match serial level between ECU and ECU Interface Part. It means to communicate correctly between two hardware we need to match voltage and signal level, and need to match baudrate. The voltage of SA-1110 is 0 ${\sim}$ +3.3V and ECU is 0 ${\sim}$ +12V and, ECU's communication Line K does multiple operation so, the interface circuit is used to match voltage and signal level. In Addition to ECU's baudrate is 10400bps, it's not standard baudrate in computer environment. So, we need to develop a device driver to control the interface circuit, and change baudrate. To monitor ECU's sensor signals through web there's a network socket program is working in Embedded Linux. It works as server program and manages user's connections and commands. Anyone who wants to monitor ECU's sensor signals he just only connect to Embedded Linux system with web browser then, Embedded Linux webserver will return the ActiveX webbased measurement software. It works in web browser and inits ECU, as a result it returns sensor signals through web. All the programs are developed with GCC(GNU C Compiler) and, webbased measurement software is developed with Borland C++ Builder.

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A Study of Atmospheric-pressure Dielectric Barrier Discharge (DBD) Volume Plasma Jet Generation According to the Flow Rate (유량에 따른 대기압 유전체 전위장벽방전(DBD) 플라즈마 젯 발생에 관한 연구)

  • Byeong-Ho Jeong
    • Journal of Industrial Convergence
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    • v.21 no.7
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    • pp.83-92
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    • 2023
  • The bullet shape of the plasma jet using the atmospheric-pressure dielectric barrier discharge method changes depending on the applied fluid rate and the intensity of the electric field. This changes appear as a difference in spectral distribution due to a difference in density of the DBD plasma jet. It is an important factor in utilizing the plasma device that difference between the occurrence of active species and the intensity through the analysis of the spectrum of the generated plasma jet. In this paper, a plasma jet generator of the atmospheric pressure volume DBD method using Ar gas was make a prototype in accordance with the proposed design method. The characteristics jet fluid rate analysis of Ar gas was accomplished through simulation to determine the dependence of flow rate for the generation of plasma jets, and the characteristics of plasma jets using spectrometers were analyzed in the prototype system to generate optimal plasma jet bullet shapes through MFC flow control. Through the design method of the proposed system, the method of establishing the optimal plasma jet characteristics in the device and the results of active species on the EOS were verified.

The Effects of Doping Hafnium on Device Characteristics of $SnO_2$ Thin-film Transistors

  • Sin, Sae-Yeong;Mun, Yeon-Geon;Kim, Ung-Seon;Park, Jong-Wan
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.199-199
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    • 2011
  • Recently, Thin film transistors (TFTs) with amorphous oxide semiconductors (AOSs) can offer an important aspect for next generation displays with high mobility. Several oxide semiconductor such as ZnO, $SnO_2$ and InGaZnO have been extensively researched. Especially, as a well-known binary metal oxide, tin oxide ($SnO_2$), usually acts as n-type semiconductor with a wide band gap of 3.6eV. Over the past several decades intensive research activities have been conducted on $SnO_2$ in the bulk, thin film and nanostructure forms due to its interesting electrical properties making it a promising material for applications in solar cells, flat panel displays, and light emitting devices. But, its application to the active channel of TFTs have been limited due to the difficulties in controlling the electron density and n-type of operation with depletion mode. In this study, we fabricated staggered bottom-gate structure $SnO_2$-TFTs and patterned channel layer used a shadow mask. Then we compare to the performance intrinsic $SnO_2$-TFTs and doping hafnium $SnO_2$-TFTs. As a result, we suggest that can be control the defect formation of $SnO_2$-TFTs by doping hafnium. The hafnium element into the $SnO_2$ thin-films maybe acts to control the carrier concentration by suppressing carrier generation via oxygen vacancy formation. Furthermore, it can be also control the mobility. And bias stability of $SnO_2$-TFTs is improvement using doping hafnium. Enhancement of device stability was attributed to the reduced defect in channel layer or interface. In order to verify this effect, we employed to measure activation energy that can be explained by the thermal activation process of the subthreshold drain current.

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Effect of ultrasonic tip designs on intraradicular post removal

  • Aguiar, Anny Carine Barros;de Meireles, Daniely Amorim;Marques, Andre Augusto Franco;Sponchiado, Emilio Carlos Junior;Garrido, Angela Delfina Bitencourt;Garcia, Lucas Da Fonseca Roberti
    • Restorative Dentistry and Endodontics
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    • v.39 no.4
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    • pp.265-269
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    • 2014
  • Objectives: To evaluate the effect of different ultrasonic tip designs on intraradicular post removal. Materials and Methods: The crowns of forty human canine teeth were removed, and after biomechanical preparation and filling, the roots were embedded in acrylic resin blocks. The post spaces were made, and root canal molding was performed with self-cured acrylic resin. After casting (Cu-Al), the posts were cemented with zinc phosphate cement. The specimens were randomly separated into 4 groups (n = 10), as follows: G1 - no ultrasonic vibration (control); G2 - ultrasonic vibration using an elongated cylindrical-shaped and active rounded tip; G3 - ultrasonic vibration with a flattened convex and linear active tip; G4 - ultrasonic vibration with active semicircular tapered tip. Ultrasonic vibration was applied for 15 seconds on each post surface and tensile test was performed in a Universal Testing Machine (Instron 4444 - 1 mm/min). Results: G4 presented the highest mean values, however, with no statistically significant difference in comparison to G3 (p > 0.05). G2 presented the lowest mean values with statistically significant difference to G3 and G4 (p < 0.05). Conclusions: Ultrasonic vibration with elongated cylindrical-shaped and active rounded tip was most effective in reducing force required for intraradicular post removal.

A Study on New Materials for Organic Active Devices (유기 능동 소자 제작을 위한 신소재 연구)

  • Lee, Sung-Jae;Lim, Sung-Taek;Shin, Dong-Myung;Choi, Jong-Sun;Lee, Hoo-Sung;Kim, Young-Kwan;Sohn, Byoung-Chung
    • Journal of the Korean Applied Science and Technology
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    • v.17 no.3
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    • pp.174-177
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    • 2000
  • The effect of a-sexithiophene(${\alpha}-6T$) layers on the light emitting diode (LED) were studied. The ${\alpha}-6T$ was used for a buffer layer in electroluminescent (EL) devices. Enhanced carrier (hole) injection and improved emission efficiency were observed. Carrier injection characteristics were investigated as a function of ${\alpha}-6T$ later thickness. The efficiency of the electroluminescence was proportional to the thickness of ${\alpha}-6T$ layer. The highest efficiency was observed 600A of ${\alpha}-6T$ later, which was about 1.5 times higher than that of device without ${\alpha}-6T$ later. The device with a-6T showed an operation voltage lowered by 2V. The ${\alpha}-6T$ layer can substitute hole blocking layer, and control charge injection properties.

Family of smart tuned mass dampers with variable frequency under harmonic excitations and ground motions: closed-form evaluation

  • Sun, C.;Nagarajaiah, S.;Dick, A.J.
    • Smart Structures and Systems
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    • v.13 no.2
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    • pp.319-341
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    • 2014
  • A family of smart tuned mass dampers (STMDs) with variable frequency and damping properties is analyzed under harmonic excitations and ground motions. Two types of STMDs are studied: one is realized by a semi-active independently variable stiffness (SAIVS) device and the other is realized by a pendulum with an adjustable length. Based on the feedback signal, the angle of the SAIVS device or the length of the pendulum is adjusted by using a servomotor such that the frequency of the STMD matches the dominant excitation frequency in real-time. Closed-form solutions are derived for the two types of STMDs under harmonic excitations and ground motions. Results indicate that a small damping ratio (zero damping is the best theoretically) and an appropriate mass ratio can produce significant reduction when compared to the case with no tuned mass damper. Experiments are conducted to verify the theoretical result of the smart pendulum TMD (SPTMD). Frequency tuning of the SPTMD is implemented through tracking and analyzing the signal of the excitation using a short time Fourier transformation (STFT) based control algorithm. It is found that the theoretical model can predict the structural responses well. Both the SAIVS STMD and the SPTMD can significantly attenuate the structural responses and outperform the conventional passive TMDs.

Comparative Study on Hydrogen Behavior in InGaZnO Thin Film Transistors with a SiO2/SiNx/SiO2 Buffer on Polyimide and Glass Substrates

  • Han, Ki-Lim;Cho, Hyeon-Su;Ok, Kyung-Chul;Oh, Saeroonter;Park, Jin-Seong
    • Electronic Materials Letters
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    • v.14 no.6
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    • pp.749-754
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    • 2018
  • Previous studies have reported on the mechanical robustness and chemical stability of flexible amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) on plastic substrates both in flat and curved states. In this study, we investigate how the polyimide (PI) substrate affects hydrogen concentration in the a-IGZO layer, which subsequently influences the device performance and stability under bias-temperature-stress. Hydrogen increases the carrier concentration in the active layer, but it also electrically deactivates intrinsic defects depending on its concentration. The influence of hydrogen varies between the TFTs fabricated on a glass substrate to those on a PI substrate. Hydrogen concentration is 5% lower in devices on a PI substrate after annealing, which increases the hysteresis characteristics from 0.22 to 0.55 V and also the threshold voltage shift under positive bias temperature stress by 2 ${\times}$ compared to the devices on a glass substrate. Hence, the analysis and control of hydrogen flux is crucial to maintaining good device performance and stability of a-IGZO TFTs.

Robust multi-objective optimization of STMD device to mitigate buildings vibrations

  • Pourzeynali, Saeid;Salimi, Shide;Yousefisefat, Meysam;Kalesar, Houshyar Eimani
    • Earthquakes and Structures
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    • v.11 no.2
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    • pp.347-369
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    • 2016
  • The main objective of this paper is the robust multi-objective optimization design of semi-active tuned mass damper (STMD) system using genetic algorithms and fuzzy logic. For optimal design of this system, it is required that the uncertainties which may exist in the system be taken into account. This consideration is performed through the robust design optimization (RDO) procedure. To evaluate the optimal values of the design parameters, three non-commensurable objective functions namely: normalized values of the maximum displacement, velocity, and acceleration of each story level are considered to minimize simultaneously. For this purpose, a fast and elitist non-dominated sorting genetic algorithm (NSGA-II) approach is used to find a set of Pareto-optimal solutions. The torsional effects due to irregularities of the building and/or unsymmetrical placements of the dampers are taken into account through the 3-D modeling of the building. Finally, the comparison of the results shows that the probabilistic robust STMD system is capable of providing a reduction of about 52%, 42.5%, and 37.24% on the maximum displacement, velocity, and acceleration of the building top story, respectively.

Subsection Synchronous Current Harmonic Minimum Pulse Width Modulation for ANPC-5L Inverter

  • Feng, Jiuyi;Song, Wenxiang;Xu, Yuan;Wang, Fei
    • Journal of Electrical Engineering and Technology
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    • v.12 no.5
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    • pp.1872-1882
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    • 2017
  • Medium voltage drive systems driven by high-power multi-level inverters operating at low switching frequency can reduce the switching losses of the power device and increase the output power. Employing subsection synchronous current harmonic minimum pulse width modulation (CHMPWM) technique can maintain the total harmonic distortion of current at a very low level. It can also reduce the losses of the system, improve the system control performance and increase the efficiency of DC-link voltage accordingly. This paper proposes a subsection synchronous CHMPWM approach of active neutral point clamped five-level (ANPC-5L) inverter under low switching frequency operation. The subsection synchronous scheme is obtained by theoretical calculation based on the allowed maximum switching frequency. The genetic algorithm (GA) is adopted to get the high-precision initial values. So the expected switching angles can be achieved with the help of sequential quadratic programming (SQP) algorithm. The selection principle of multiple sets of the switching angles is also presented. Finally, the validity of the theoretical analysis and the superiority of the CHMPWM are verified through both the simulation results and experimental results.