• Journal of Applied Reliability
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• v.13 no.2
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• pp.117-127
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• 2013

In this paper, we studied the correlation between the activation energy($E_a$) of the raw materials and the structural characteristics of the White LED PKGs. The samples used in the study were composed of low power LED 3type and high power LED 5type. To calculate the activation energy($E_a$) of the White LED PKGs conducted three conditions of high temperature operation test based on the Arrhenius model. The number of samples used in the experiment is 10, respectively. The $T_j$ of Conditions and target specifics expressed $T_{j1}$, $T_{j2}$, $T_{j3}$. The activation energy ($E_a$) of the samples was calculated based on the value of the actually measured lifetime. We investigated the correlation between the activation energy ($E_a$) of the raw materials and the structural characteristics of the White LED PKGs. As a result, White LED PKGs activation energy($E_a$) value was confirmed that the material properties affected more than the structural characteristics of the LED PKGs and we found that activation energy of each LED Model has difference. Normally, The activation energy of phosphor of YAG type was indicated from 0.21 to 0.25[eV] and Silicate type was indicated from 0.12 to 0.16[eV]. According to the results, we confirmed that the activation energy of phosphor of YAG type is higher more than The activation energy of phosphor of Silicate type.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.91-91
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• 2011

박막태양전지의 높은 효율개선을 위해 TCO층과 p-layer 사이에 buffer layer를 넣어 Voc와 FF를 개선하는 연구가 진행되고 있다. 이에 buffer layer의 활성화 정도를 높이기 위해 p-layer을 최적화 시키고자한다. 이 실험에서 a-Si:B에 N2O를 도핑시켜 Bandgap Energy 2.0 eV, Activation Energy 0.4 eV인 a-SiOx:B 막을 제작하여 buffer layer로 사용하였고 이 buffer layer에 의한 cell의 효율 향상을 최적화 하기위해 ASA simulation을 이용해 p-layer의 Bandgap Energy와 Activation Energy를 가변 하여 보았다. 실험결과 p-layer의 Bandgap Energy 1.95 eV에서 buffer layer와 p-layer사이에서의 barrier가 최소가 됨을 확인 할 수 있었고 Actication Energy 0.5 eV에서 가장 높은 Voc를 가짐을 알 수 있었다. 본 연구를 통해 p-layer의 Bandgap Energy 1.95 eV, Activation Energy 0.5 eV에서 buffer layer를 활성화시키기 위한 p-layer의 최적화 조건을 구현해 볼 수 있었다.

• Journal of the Semiconductor & Display Technology
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• v.18 no.2
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• pp.82-86
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• 2019

The reliability of 3D NAND flash memory cell is affected by the charge migration which can be divided into the vertical migration and the lateral migration. To clarify the difference of two migrations, the activation energy of the charge loss is extracted and compared in a conventional square device pattern and a new test pattern where the perimeter of the gate is exaggerated but the area is same. The charge loss is larger in the suggested test pattern and the activation energy is extracted to be 0.058 eV while the activation energy is 0.28 eV in the square pattern.

• The Korean Journal of Rheology
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• v.10 no.4
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• pp.227-233
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• 1998

The effects of 1 mol% N-benzylpyrazinium hexafluoroantimonate(BPH) as a thermal latent initiator and blend compositions composed of cycloaliphatic and DGEBA epoxies were investigated in the rheological properties and cure kinetics. Latent properties were performed by measurement of the conversion as a function of reaction time using isothermal DSC at $150^{\circ}C$ and $50^{\circ}C$ Rheological properties of the blend systems were investigated in terms of isothermal experiments using a rheometer. The gelation time was obtained from the evaluation of storage modulus (G'), loss modulus (G") and damping factor (tan$\delta$)). Cross-linking activation energy ($E_c$) was also determined from the Arrhenius equation based on gel time and curing temperature. As a result, the gel time and cross-linking activation energy increased with increasing DGEBA composition. The cure activation energies ($E_a$) were obtained by Kissinger method using dynamic DSC thermograms. In this work, the cure activation energy decreased with increasing CAE concentration, which might be resulted from the short repeat units, simple side-groups and viscosity of reaction media.edia.

• Proceedings of the Korean Vacuum Society Conference
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• 1995.02a
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• pp.057-58
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• 1995

극소전자 디바이스의 고집적화에 의해 박막배선의 선폭은 0.5$mu extrm{m}$ 이하로 축소되고 있고 상대적으로 높은 전류밀도가 흐르게 된다. 높은 전류밀도하에서는 현재 일반적으로 사용되고 있는 Al을 기본으로 하는 박막배선에서의 electromigration에 의한 결함 발생 그리고 비교적 낮은 전기전도도가 심각한 문제점으로 제기된다. 본 연구에서는 Al과 고전기전도도 물질인 Ag, Cu, 그리고 Au 박막배선에 대해 electromigration에 대한 저항성, 즉 activation energy를 측정 비교함으로써 차세대 극소전자 디바이스를 위한 박막배선재료로서의 가능성을 알아보고자 한다. Electromigration test 및 activation energy를 구하기 위해 순수 Ag, Cu, Al, Au 박막배선을 0.05$\mu\textrm{m}$ 두께, 100$\mu\textrm{m}$ 선폭, 그리고 5000$\mu\textrm{m}$ 길이로 SiO2 열산화막 처리된 pp-Si(100) 기판 위에 진공 증착시켰다. 가속화 실험을 위해 인가된 d.c. 전류밀도는 2$\times$106A/$ extrm{cm}^2$ 이었고, Al과 Au에서는 6$\times$106A/$\textrm{cm}^2$이었다. 실온에서 24$0^{\circ}C$까지의 온도범위에서 d.c.인가후의 저항변화를 측정하여 Median-Time-to-Failure(MTF)를 구한 후 Black 방정식을 이용하여 activation energy를 측정하였다. Activation energy는 Cu가 1.34eV로서 가장 높게 나타났고 Au가 1.01eV, Al이 0.66eV, Ag가 0.29eV의 순으로 측정되었다. 따라서 Cu와 Au 박막배선의 경우 Al보다 electromigration에 대한 저항력이 강한 고활성화에너지 특성을 갖는 고전기전도도 재료로서 차세대 극소전자 디바이스를 위한 대체 박막배선재료로서의 가능성을 보인다.

• Journal of Radiation Protection and Research
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• v.34 no.4
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• pp.155-164
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• 2009

In this paper, we used computerized glow curve deconvolution (CGCD) software with several models for the simulation of a TL glow curve which was used for analysis. By using the general approximation plus model, parameters values of the glow curve were analyzed and compared with the other models parameters (general approximation, mixed order kinetics, general order kinetics). The LiF:Mg,Cu,Si and the LiF:Mg,Cu,P material were used for the glow curve analysis. And we based on figure of merits (FOM) which was the goodness of the fitting that was monitored through the value between analysis model and TLD materials. The ideal value of FOM is 0 which represents a perfect fit. The main glow peak makes the most effect of radiation dose assessment of TLD materials. The main peak of the LiF:Mg,Cu,Si materials has a intensity rate 80.76% of the whole TL glow intensity, and that of LiF:Mg,Cu,P materials has a intensity rate 68.07% of the whole TL glow intensity. The activation energy of LiF:Mg,Cu,Si was analyzed as 2.39 eV by result of the general approximation plus(GAP) model. In the case of mixed order kinetics (MOK), the activation energy was analyzed as 2.29 eV. The activation energy was analyzed as 2.38 eV by the general order kinetics (GOK) model. In the case of LiF:Mg,Cu,P TLD, the activation energy was analyzed as 2.39 eV by result of the GAP model. In the case of MOK, the activation energy was analyzed as 2.55 eV. The activation energy was analyzed as 2.51 eV by the GOK model. The R value means different ratio of retrapping-recombination. The R value of LiF:Mg,Cu,Si TLD main peak analyzed as $1.12\times10^{-6}$ and $\alpha$ value analyzed as $1.0\times10^{-3}$. The R of LiF:Mg,Cu,P TLD analyzed as $7.91\times10^{-4}$, the $\alpha$ value means different ratio of initial thermally trapped electron density-initial trapped electron density (include thermally disconnected trap electrons density). The $\alpha$ value was analyzed as $9.17\times10^{-1}$ which was the difference from LiF:Mg,Cu,Si TLD. The deep trap electron density of LiF:Mg,Cu,Si was higher than the deep trap electron density of LiF:Mg,Cu,P.

• Journal of Photoscience
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• v.10 no.3
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• pp.225-229
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• 2003

The fluorescence quenching of 5-methyl-3-phenyl-2-[s-oxadiazol-2'-thionen5'-yl] indole by carbon tetrachloride ($CCl_4$) and aniline in different solvents viz., dioxane, benzene, toluene, methanol, propanol has been carried out at room temperature to understand the role of quenching mechanisms. The Stern-Volmer plots have been found to be linear. As probability of quenching per encounter 'p' is less than unity, and the activation energy for quenching 'E$_{a}$' is greater than the activation energy of diffusion 'E$_{d}$', it is inferred that the fluorescence of quenching mechanism is not due to material diffusion alone.e.e.

• Journal of Photoscience
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• v.12 no.1
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• pp.51-54
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• 2005

The electronic excitationenergy quenching of 2, 5-diphenyl-1, 3, 4-oxadiazole (PPD) by Carbon tetrachloride ($CCl_4$) in different solvents viz, n-hexane, n-heptane, toluene, benzene, cyclohexane, 1, 4- dioxane has been carried out at room temperature to understand the role of quenching mechanism. The Stern-Volmer plots have been found to be linear. As probability of quenching per encounter 'p' is less than unity, and the activation energy for quenching '$E_a$' is greater than the activation energy of diffusion '$E_d$', it is inferred that the fluorescence quenching mechanism is not due to material diffusion alone.

• Carbon letters
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• v.4 no.3
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• pp.126-132
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• 2003

Granular Activated Carbon (GAC) has been proven to be an excellent material for many industrial applications. A systematic study has been carried out of the kinetics of physical as well as chemical activation of phenolic resin chars. Physical activation was carried out using $CO_2$ and chemical activation using KOH as activating agent. There are number of factors which influence the rate of activation. The activation temperature and residence time at HTT varied in the range $550{\sim}1000^{\circ}C$ and $\frac{1}{2}{\sim}8$ hrs respectively. Kinetic studies show that the rate of chemical activation is 10 times faster than physical activation even at much lower temperature. Above study show that the chemical activation process is suitable to prepare granular activated carbon with very high surface area i.e.$ 2895\;m^2/g$ in short duration of time i.e. 1 to 2 hrs at lower temperature i.e. $750^{\circ}C$ from phenolic resins.

• 한국신재생에너지학회:학술대회논문집
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• 2011.11a
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• pp.64.2-64.2
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• 2011

a-Si 박막 태양전지는 a-Si:H을 유리 기판 사이에 주입해 만드는 태양전지로, 뛰어난 적용성과 경제성을 지녔으나 c-Si 태양전지에 비해 낮은 변환 효율을 보이는 단점이 있다. 변환 효율을 높이기 위한 연구 방법으로는 a-Si 박막 태양전지 단일cell 제작 시 high Bandgap을 가지는 p-layer를 사용함으로 높은 Voc와 Jsc의 향상에 기여할 수 있는데, 이 때 p-layer의 defect 증가와 activation energy 증가도 동시에 일어나 변환 효율의 증가폭을 감소시킨다. 이를 보완하기 위해 본 실험에서는 p-layer에 기존의 p-a-Si:H를 사용함과 동시에 high Bandgap의 buffer layer를 p-layer와 i-layer 사이에 삽입함으로써 그 장점을 유지하고 높은 defect과 낮은 activation energy의 영향을 최소화하였다. ASA 시뮬레이션을 통해 a-Si:H보다 high Bandgap을 가지는 a-SiOx 박막을 사용하여 p-type buffer layer의 두께를 2nm, Bandgap 2.0eV, activation energy를 0.55eV로 설정하고, i-type buffer layer의 두께를 2nm, Bandgap 1.8eV로 설정하여 삽입하였을 때 박막 태양전지의 변환 효율 10.74%를 달성할 수 있었다. (Voc=904mV, Jsc=$17.48mA/cm^2$, FF=67.97).